概述
数据手册TESP5700_08 概述
Silicon PIN Photodiode, RoHS Compliant 硅PIN光电二极管，符合RoHS
TESP5700_08 数据手册
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PDF下载TESP5700
Vishay Semiconductors
Silicon PIN Photodiode, RoHS Compliant
FEATURES
• Package type: leaded
• Package form: side view
• Dimensions (L x W x H in mm): 4.5 x 5 x 6
• Radiant sensitive area (in mm2): 2.2
• High radiant sensitivity
• Daylight blocking filter matched with 870 nm to
950 nm emitters
16936
• High cut-off frequency at VR = 2 V: 35 MHz
• Angle of half sensitivity: ϕ = 60°
• Lead (Pb)-free component in accordance with
RoHS 2002/95/EC and WEEE 2002/96/EC
APPLICATIONS
• High speed data transmission specifically using low supply
voltage
DESCRIPTION
TESP5700 PIN photodiode is applicable to high speed data
transmission specifically at low reverse voltage. Black epoxy
package include side view lens and daylight blocking filter,
matched to high speed IR emitters.
• High speed detector for infrared radiation
• Infrared
remote
control
and
free
air
data
transmissionsystems, e.g. in combination with TSFFxxxx
series IR emitters
PRODUCT SUMMARY
COMPONENT
Ira (µA)
ϕ (deg)
λ0.5 (nm)
TESP5700
25
60
790 to 980
Note
Test condition see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
PACKAGING
REMARKS
PACKAGE FORM
TESP5700
Bulk
MOQ: 4000 pcs, 4000 pcs/bulk
Side view
Note
MOQ: minimum order quantity
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITION
SYMBOL
VR
VALUE
UNIT
Reverse voltage
60
215
V
mW
°C
Power dissipation
Tamb ≤ 25 °C
PV
Junction temperature
Tj
100
Operating temperature range
Storage temperature range
Soldering temperature
Tamb
Tstg
- 40 to + 100
- 40 to + 100
260
°C
°C
t ≤ 5 s
Tsd
°C
Thermal resistance junction/ambient
Connected with Cu wire, 0.14 mm2
RthJA
350
K/W
Note
T
amb = 25 °C, unless otherwise specified
Document Number: 81573
Rev. 1.5, 08-Sep-08
For technical questions, contact: detectortechsupport@vishay.com
www.vishay.com
513
TESP5700
Silicon PIN Photodiode, RoHS Compliant
Vishay Semiconductors
BASIC CHARACTERISTICS
PARAMETER
TEST CONDITION
SYMBOL
VF
MIN.
TYP.
MAX.
UNIT
V
Forward voltage
IF = 50 mA
0.9
1.3
Breakdown voltage
I
R = 100 µA, E = 0
R = 10 V, E = 0
R = 0 V, f = 1 MHz, E = 0
R = 2 V, f = 1 MHz
V(BR)
Iro
60
V
Reverse dark current
Diode capacitance
V
1
17
10
nA
pF
V
CD
Serial resistance
V
RS
40
Ω
Open circuit voltage
Temperature coefficient of Vo
Short circuit current
Ee = 1 mW/cm2, λ = 870 nm
Ee = 1 mW/cm2, λ = 870 nm
Ee = 1 mW/cm2, λ = 870 nm
Ee = 1 mW/cm2, λ = 870nm,
Vo
430
- 2.6
23
mV
mV/K
µA
TKVo
Ik
Reverse light current
Ira
16
25
µA
V
R = 2 V
Ee = 1 mW/cm2, λ = 870 nm,
R = 2 V
Temperature coefficient of Ira
TKIra
0.13
%/K
V
V
V
R = 2 V, λ = 870 nm
R = 5 V, λ = 950 nm
s(λ)
s(λ)
ϕ
λp
λ0.5
tr
0.57
A/W
A/W
deg
nm
Absolute spectral sensitivity
0.37
Angle of half sensitivity
60
Wavelength of peak sensitivity
Range of spectral bandwidth
870
790 to 980
nm
Rise time
V
R = 2 V, RL = 50 Ω, λ = 870 nm
R = 2 V, RL = 50 Ω, λ = 870 nm
R = 2 V, RL = 50 Ω, λ = 870 nm
10
10
4
ns
Fall time
V
V
tf
ns
Cut-off frequency
fc
MHz
Note
Tamb = 25 °C, unless otherwise specified
BASIC CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified
1000
1.4
1.2
1.0
VR = 5 V
λ = 950 nm
100
10
0.8
VR = 10 V
1
0.6
20
40
60
80
100
0
20
40
60
80
100
Tamb - Ambient Temperature (°C)
Tamb - Ambient Temperature (°C)
16931
94 8409
Fig. 1 - Reverse Dark Current vs. Ambient Temperature
Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
www.vishay.com
514
For technical questions, contact: detectortechsupport@vishay.com
Document Number: 81573
Rev. 1.5, 08-Sep-08
TESP5700
Silicon PIN Photodiode, RoHS Compliant
Vishay Semiconductors
1000
100
10
1.2
1.0
0.8
0.6
VR = 2 V
= 870 nm
0.4
1
0.2
0.0
0.1
10
0.01
0.1
1
750
850
950
1050
1150
2
16935
- Wavelenght (nm)
Ee - Irradiance ( mW/cm )
16932
Fig. 3 - Reverse Light Current vs. Irradiance
Fig. 6 - Relative Spectral Sensitivity vs. Wavelength
0°
10°
20°
100
30°
40°
= 870 nm
2
1 mW/cm
1.0
0.9
10
50°
60°
0.8
2
0.1 mW/cm
70°
80°
0.7
1
100
0.1
11
0
0.6 0.4 0.2
0
94 8413
V
R
- Reverse Voltage (V)
16933
Fig. 4 - Reverse Light Current vs. Reverse Voltage
Fig. 7 - Relative Radiant Sensitivity vs. Angular Displacement
40
35
E = 0
f = 1 MHz
30
25
20
15
10
5
0
0.1
1.0
10.0
100.0
16934
VR - Reverse Voltage (V)
Fig. 5 - Diode Capacitance vs. Reverse Voltage
Document Number: 81573
Rev. 1.5, 08-Sep-08
For technical questions, contact: detectortechsupport@vishay.com
www.vishay.com
515
TESP5700
Silicon PIN Photodiode, RoHS Compliant
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters
+ 0.1
- 0.3
5
0.2
3.2
(2.4)
0.2
4.5
R 2.25 (sphere)
Area not plane
+ 0.1
- 0.2
3.4 + 0.1
0.65
- 0.3
A
C
0.45 + 0.2
0.4 + 0.15
- 0.1
technical drawings
according to DIN
specifications
0.2
2.54 nom.
1.1
Drawing-No.: 6.544-5199.01-4
Issue: 2; 19.06.01
95 11475
www.vishay.com
516
For technical questions, contact: detectortechsupport@vishay.com
Document Number: 81573
Rev. 1.5, 08-Sep-08
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
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