TFDS6500E [VISHAY]
2.7-5.5V Fast Infrared Transceiver Module Family; 2.7-5.5V快速红外收发器模块系列
| 型号： | TFDS6500E |
| 厂家： | 
VISHAY |
| 描述： | 2.7-5.5V Fast Infrared Transceiver Module Family |
| 文件： | 总12页 (文件大小：552K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TELEFUNKEN
Semiconductors
TFDU6100E/TFDS6500E/TFDT6500E
2.7–5.5V Fast Infrared Transceiver Module Family
(FIR, 4 Mbit/s)
Features
Applications
D Compliant to IrDA 1.2 (Up to
4 Mbit/s), HP–SIR, Sharp ASK
and TV Remote
D BabyFace (Universal) Package
Capable of Surface Mount
Solderability to Side and Top
View Orientation
D Directly Interfaces With Various
Super I/O and Controller Devices
D Built–In EMI Protection – No
External Shielding Necessary
D Few External Components
Required
D Notebook Computers, Desktop
PCs, Palmtop Computers (Win
CE, Palm PC), PDAs
D Digital Still and Video Cameras
D Printers, Fax Machines,
Photocopiers, Screen Projectors
D Telecommunication Products
(Cellular Phones, Pagers)
D Internet TV Boxes, Video
Conferencing Systems
D Wide Operating Voltage Range
(2.7 to 5.5 V )
D Low-Power Consumption (3 mA
Supply Current)
D Power Shutdown Mode (1 mA
Shutdown Current)
D Long Range (Up to 2.0 m at
4 Mbit/s in Nominal Design)
D High Efficiency Emitter
(120 mW/sr min "15_)
D Backward Compatible to All
TEMIC SIR and FIR Infrared
Transceivers
D External Infrared Adapters
(Dongles)
D Medical and Industrial Data
Collection Devices
D Three Surface Mount Package
Options
– Universal (9.7 x 4.7 x 4.0 mm)
– Side View (13.0x5.95x5.3mm)
– Top View (13.0x7.6x5.95mm)
Description
The TFDU6100E, TFDS6500E, and TFDT6500E are a wide selection provides flexibility for a variety of
family of low-power infrared transceiver modules applications and space constraints.
compliant to the IrDA 1.2 standard for fast infrared (FIR)
data communication, supporting IrDA speeds up to 4.0 The transceivers are capable of directly interfacing with
Mbit/s, HP–SIR, Sharp ASK and carrier based remote a wide variety of I/O chips which perform the pulse-width
control modes up to 2 MHz. Integrated within the modulation/demodulation function, including National
transceiver modules are a photo PIN diode, infrared Semiconductor’s PC87338, PC87108 and PC87109,
emitter (IRED), and a low-power CMOS control IC to SMSC’s FDC37C669, FDC37N769 and CAM35C44,
provide a total front–end solution in a single package. and Hitachi’s SH3. At a minimum, a current-limiting
TEMIC’s FIR transceivers are available in three package resistor in series with the infrared emitter and a V
CC
options, including our BabyFace package (TFDU6100E), bypass capacitor are the only external components
the smallest FIR transceiver available on the market. This required to implement a complete solution.
Package Options
TFDU6100E
Baby Face (Universal)
TFDS6500E
Side View
TFDT6500E
Top View
This product is currently in devleopment. Inquiries regarding the status of this product should be directed to TEMIC Marketing.
Pending—Rev. A, 03-Apr-98
1
Pre-Release Information
TELEFUNKEN
TFDU6100E/TFDS6500E/TFDT6500E
Semiconductors
Functional Block Diagram
V
CC
Driver
Rxd
Amplifier
Comparator
IRED Anode
AGC
Logic
SD/Mode
Txd
IRED Cathode
Open Collector Driver
GND
Pin Assignment and Description
Pin Number
“ U ”, “ T ”
Option
“ S ”
Option
Function
Description
I/O
Active
1
8
IRED Anode IRED anode, should be externally connected to V through a current
CC
control resistor
2
3
4
1
7
2
IRED Cathode IRED cathode, internally connected to driver transistor
Txd
Rxd
Transmit Data Input
I
HIGH
LOW
Received Data Output, push–pull CMOS driver output capable of driving a
standard CMOS or TTL load. No external pull–up or pull–down resistor is
required (pin is floating when device is in shutdown mode).
O
5
6
7
8
6
3
5
4
SD/Mode
Shutdown/Mode
Supply Voltage
Do not connect.
Ground
I
HIGH
V
CC
NC
GND
8
7
6
5
IRED
Detector
IRED
Detector
1
2 3 4 5 6 7 8
1
2
3
4
1
2
3
4
5
6
7
8
IRED
Detector
”U” Option
BabyFace (Universal)
”S” Option
Side View
”T” Option
Top View
2
Pending—Rev. A, 03-Apr-98
Pre-Release Information
TELEFUNKEN
Semiconductors
TFDU6100E/TFDS6500E/TFDT6500E
Ordering Information
Part Number
TFDU6100E–TR3
TFDU6100E–TT3
TFDS6500E–TR3
Qty/ Reel
Description
1000 pcs
1000 pcs
750 pcs
Oriented in carrier tape for side view surface mounting
Oriented in carrier tape for top view surface mounting
TFDT6500E–TR3
750 pcs
Absolute Maximum Ratings
Parameter
Symbol
Test Conditionsa
Minb
– 0.5
0
Typc
Maxb
Unit
Supply Voltage Range
V
6
CC
V
Supply Voltage Range (Anode)
V
anode
V
+1.5
CC
d
Input Currents
10
mA
Output Sinking Current
25
350
125
85
e
Power Dissipation
P
mW
D
Junction Temperature
T
J
Ambient Temperature Range (Operating)
Storage Temperature Range
Soldering Temperature
T
amb
–25
–25
°C
T
stg
85
See Recommended Solder Profile
240
130
600
6
Average Output Current
I
(DC)
IRED
mA
V
Repetitive Pulsed Output Current
IRED Anode Voltage at Current Output
Transmitter Data Input Voltage
Receiver Data Output Voltage
I
(RP)
<90 µs, t <20%
IRED
on
V
– 0.5
– 0.5
– 0.5
2.5
IREDA
V
V
V
V
+0.5
Txd
CC
CC
+0.5
Rxd
f
Virtual Source Size
d
2.8
mm
Maximum Intensity for Class 1 Operation
of IEC 825 or EN60825
EN60825, 1997
320
mW/sr
g
Notes
a. Reference point GND pin unless otherwise noted.
b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. Maximum input current for all pins (except IRED Anode pin).
e. See Derating Curve.
f. Method: (1-1/e) encircled energy.
g. Worst case IrDA SIR pulse pattern.
Pending—Rev. A, 03-Apr-98
3
Pre-Release Information
TELEFUNKEN
TFDU6100E/TFDS6500E/TFDT6500E
Semiconductors
Electrical Characteristics
Parameter
Symbol
Test Conditionsa
Minb
Typc
Maxb
Unit
Transceiver
Supply Voltage
V
2.7
5.5
4
V
CC
CC
CC
d
2
Dynamic Supply Current
Dynamic Supply Current
I
I
SD = Low, E = 0 mW/m
3
3
e
mA
d
SD = Low, E = 1 klx
4
e
SD = High, Mode = floating,
e
Standby Supply Current
I
I
I
1
1.5
5
SD
SD
SD
25°C, E = 0 klx
e
SD = High, Mode = floating,
Standby Supply Current
µA
°C
V
d
T =25°C, E = 1 klx
e
SD = High, Mode = floating,
e
Standby Supply Current
T = 85°C
Operating Temperature Range
Output Voltage Low
T
–25
85
A
V
R
R
= 2.2 kΩ, C
= 2.2 kΩ, C
= 15 pF
= 15 pF
0.5
0.8
OL
OH
load
load
Output Voltage High
Input Voltage Low
V
V
–0.5
CC
load
load
V
0
0.8
IL
IH
IH
L
f
Input Voltage High
V
V
I
0.9 * VCC
2.4
g
Input Voltage High
V
≥ 4.5V
CC
Input Leakage Current
Input Capacitance
–10
+10
5
µA
C
pF
I
Notes
a. Tamb = 25_, V = 2.7 – 5.5 V unless otherwise noted.
CC
b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. Receive mode only. In transmit mode, add additional 100 mA (typ) to IRED current.
e. Not ambient light sensitive.
f. CMOS levels.
g. TTL levels.
4
Pending—Rev. A, 03-Apr-98
Pre-Release Information
TELEFUNKEN
Semiconductors
TFDU6100E/TFDS6500E/TFDT6500E
Optoelectronic Characteristics
Parameter
Symbol
Test Conditionsa
Minb Typc
Maxb
Unit
Receiver
Minimum Detection Threshold Irradiance
Minimum Detection Threshold Irradiance
Maximum Detection Threshold Irradiance
Logic LOW Receiver Input Irradiance
Rise Time of Output Signal
E
E
E
E
9.6 kbit/s to 115.2 kbit/s
1.152 Mbit/s to 4 Mbit/s
20
50
35
80
e
e
e
e
2
2
mW/m
2
5
4
10
10
kW/m
mW/m
t
RR
10% to 90%, @2.2 kΩ, 15pF
90% to 10%, @2.2 kΩ, 15pF
10
10
1.2
40
40
20
ns
Fall Time of Output Signal
t
FR
Rx Pulse Width of Output Signal, 50%
P
w
Input pulse length 20 µs, 9.6 kbit/s
µs
Input pulse length 1.41µs, 115.2 kbit/s
Rx Pulse Width of Output Signal, 50%
Rx Pulse Width of Output Signal, 50%
Rx Pulse Width of Output Signal, 50%
Rx Pulse Width of Output Signal, 50%
Jitter, Leading Edge
P
P
P
P
1.2
190
90
2.2
260
165
290
w
mode
Input pulse length 217 ns, 4.0 Mbit/s
mode
w
w
w
Input pulse length 125 ns, 4.0 Mbit/s
mode
ns
Input pulse length 250 ns, 4.0 Mbit/s
mode (double pulse)
210
2
Input Irradiance = 90 mW/m ,
10
4.0 Mbit/s mode
Latency
t
L
120
µs
Transmitter
IRED Operating Current
I
V
= 5 V, R = 5.6 Ω
0.48
140
±24
0.55
280
A
D
CC
1
Txd = High, SD = Low,
R = 5.6 Ω
d
Output Radiant Intensity
I
120
mW/sr
e
1
Output Radiant Intensity Half Angle
α
_
d
e
Output Radiant Intensity
I
Txd = Low or SD = High , R =5.6 Ω
.04
mW/sr
e
L
Peak Wavelength
λ
880
10
900
nm
P
I = 600 mA, pulse length 2 µs, duty
F
Voltage drop at output driver
400
800
mV
cycle 25%
Rise Time, Fall Time
Optical Overshoot
t , t
R
40
25
ns
%
F
Notes
a.
T
= 25_C, V = 2.7 – 5.5 V unless otherwise noted.
amb
CC
b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. VCC = 5 V, a = 0_, 15_
e. Receiver is inactive as long as SD = High
Pending—Rev. A, 03-Apr-98
5
Pre-Release Information
TELEFUNKEN
TFDU6100E/TFDS6500E/TFDT6500E
Semiconductors
Recommended Circuit Diagram
300
The only required components for designing an IrDA 1.2
compatible design using TEMIC FIR transceivers are a
current limiting resistor, R , to the IRED. However,
depending on the entire system design and board layout,
additional components may be required (see Figure 1).
250
200
150
100
1
5.25 V, Min. Efficiency,
Min. VF, Min. R
DSon
TEMIC FIR transceivers integrate a sensitive receiver
and a built–in power driver. The combination of both
needs a careful circuit board layout. The use of thin, long
resistive and inductive wiring should be avoided. The
inputs (Txd, SD/Mode) and the output Rxd should be
directly (DC) coupled to the I/O circuit.
4.75 V, Min. Efficiency,
Min. VF, Max. R
DSon
50
0
IrDA Field of View: Cone of "15_
4.0
6.0
8.0
10.0 12.0 14.0
16.0
V
CC2
Current Control Resistor (W)
R1
TFDx6x00
Figure 2. I vs. R
e
l
IRED
Cathode Anode
IRED
R2
The placement of these parts is critical. It is strongly
recommended to position C2 as near as possible to the
transceiver power supply pins. A tantalum capacitor
should be used for C1 while a ceramic capacitor is used
for C2. Also, when connecting the described circuit to the
power supply, low impedance wiring should be used.
Rxd
Txd
Rxd
Txd
V
SD/Mode
CC
C1
C2
GND
NC
GND
Table 1. Recommended Application Circuit Components
SC
Component
Recommended Value
Note: Outlined components are optional depending on quality of
power supply.
C1
C2
R1
4.7 mF, Tantalum
0.1 µF, Ceramic
Figure 1. Recommended Application Circuit
5.6 Ω , 0.25 W (recommend using two 0.125 W
resistors in parallel)
R2
47 Ω , 0.125 W
R1 is used for controlling the current through the IR
emitter. For increasing the output power of the IRED, the
value of the resistor should be reduced. Similarly, to
reduce the output power of the IRED, the value of the
resistor should be increased. For typical values of R1 see
Figure 2 . For IrDA compliant operation, a current control
resistor of 5.6 Ω is recommended. The upper drive current
limitation is dependent on the duty cycle and is given by
the absolute maximum ratings on the data sheet.
Mode Switching
The TFDU6100E, TFDS6500E and TFDT6500E powers
on in a no default mode, therefore the data transfer rate
has to be set by a programming sequence as described
below or selected by setting the mode pin. When using the
Mode pin, the standby current might be increased to about
50 to 60 µA. In standby mode, the mode input should float
to minimize standby current.
R2, C1 and C2 are optional and dependent on the quality
of the supply voltage V and injected noise. An unstable
CC
power supply with dropping voltage during transmission The low frequency mode covers speeds up to 115.2 kbit/s.
may reduce sensitivity (and transmission range) of the Signals with higher data rates should be detected in the
transceiver.
high frequency mode. Lower data frequency data can also
6
Pending—Rev. A, 03-Apr-98
Pre-Release Information
TELEFUNKEN
Semiconductors
TFDU6100E/TFDS6500E/TFDT6500E
received in high frequency mode with reduced sensitivity. 2. Set Txd input to logic ”HIGH”. Wait t w200 ns.
s
To switch the transceivers from low frequency mode to
the 4.0 Mbit/s mode and vice versa, the programming
sequences described below are required.
3. Set SD/MODE to logic ”LOW” (this negative edge
latches state of Txd, which determines speed setting).
4. After waiting t w200 ns Txd can be set to logic
h
”LOW”. The hold time of Txd is limited by the
maximum allowed pulse length.
SD/Mode
Txd is now enabled as normal Txd input for the high
bandwidth mode.
t
s
t
h
High
Txd
Setting to the Lower Bandwidth Mode (2.4 to
115.2 kbit/s)
Low
High: FIR
Low: SIR
1. Set SD/MODE input to logic ”HIGH”.
2. Set Txd input to logic ”LOW”. Wait t w200 ns.
s
Mode Pin
3. Set SD/MODE to logic ”LOW” (this negative edge
latches state of Txd, which determines speed setting).
Figure 3. Timing Diagram
4. Txd must be held for t w200 ns.
h
Setting to the High Bandwidth Mode (0.576 to
4.0 Mbit/s)
1. Set SD/MODE input to logic ”HIGH”.
Txd is now enabled as normal Txd input for the lower
bandwidth mode.
Pending—Rev. A, 03-Apr-98
7
Pre-Release Information
TELEFUNKEN
TFDU6100E/TFDS6500E/TFDT6500E
Semiconductors
TFDU6100E – BabyFace (Universal) Package
Mechanical Dimensions
6100E 125
8
Pending—Rev. A, 03-Apr-98
Pre-Release Information
TELEFUNKEN
Semiconductors
TFDU6100E/TFDS6500E/TFDT6500E
TFDS6500E – Side View Package
Mechanical Dimensions
TK84 731
TFDS6500
Pending—Rev. A, 03-Apr-98
9
Pre-Release Information
TELEFUNKEN
TFDU6100E/TFDS6500E/TFDT6500E
Semiconductors
TFDT6500E – Top View Package
Mechanical Dimensions
10
Pending—Rev. A, 03-Apr-98
Pre-Release Information
TELEFUNKEN
Semiconductors
TFDU6100E/TFDS6500E/TFDT6500E
Recommended SMD Pad Layouta
TFDU6100E
-
BabyFace (Universal) Package
0.8
TFDT6500E
Side View Packa
(note: leads of the device should be at least 0.3 mm
-
Top View Package
TFDS6500E
-
within the ends of the pads.
Pad
1
is longer to designate
Pin 1 connection to transceiver.)
a. The leads of the device should be sodered in the center position pads.
Pending—Rev. A, 03-Apr-98
11
Pre-Release Information
TELEFUNKEN
TFDU6100E/TFDS6500E/TFDT6500E
Semiconductors
Recommended Solder Profile
260
240
220
10 s Max. @ 230 _C
2 – 4 _C/Seconds
200
180
160
_
140
120 – 180 Seconds
90 s Max.
120
100
80
2 – 4 _C/Seconds
60
40
20
0
0
50
100
150
200
250
300
350
Time (Seconds)
Current Derating Curve
600
500
400
300
Current derating as a function of the
maximum forward current of IRED.
Maximum duty cycle: 25%
200
100
0
–40
–20
0
20
40
60
80
100
120
140
Temperature (_C)
12
Pending—Rev. A, 03-Apr-98
Pre-Release Information
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