TGL41-160HE3/46 [VISHAY]
Trans Voltage Suppressor Diode, 200W, 130V V(RWM), Unidirectional, 1 Element, Silicon, DO-213AB, PLASTIC, GL41, 2 PIN;
| 型号： | TGL41-160HE3/46 |
| 厂家： | 
VISHAY |
| 描述： | Trans Voltage Suppressor Diode, 200W, 130V V(RWM), Unidirectional, 1 Element, Silicon, DO-213AB, PLASTIC, GL41, 2 PIN |
| 文件： | 总4页 (文件大小：35K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TGL41-6.8 thru TGL41-200A
Vishay Semiconductors
formerly General Semiconductor
Surface Mount TRANSZORB®
Transient Voltage Suppressors
DO-213AB (GL41)
Breakdown Voltage 6.8 to 200V
Peak Pulse Power 400W
SOLDERABLE ENDS
1st BAND
+ 0
D2 = D1
- 0.008 (0.20)
Mounting Pad Layout
D1=
0.157 (4.00)
MAX
D2
0.105
0.095
(2.67)
(2.41)
0.049 (1.25) MIN
0.118 (3.00) MIN
0.022 (0.56)
0.018 (0.46)
0.022 (0.56)
0.018 (0.46)
0.205 (5.2)
0.185(4.7)
0.256 (6.50)
REF
Dimensions in inches
and (millimeters)
1st band denotes type and positive end (cathode)
Mechanical Data
Features
Case: JEDEC DO-213AB molded plastic body over
• Plastic package has Underwriters Laboratory
passivated junction
Flammability Classificaion 94V-0
Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026
High temperature soldering guaranteed:
250°C/10 seconds at terminals
Polarity: Blue bands denotes the cathode which is
positive with respect to the anode under normal TVS
operation
Mounting Position: Any
Weight: 0.0046 oz., 0.166 g
Packaging codes/options:
• For surface mounted applications
• Glass passivated junction
• Excellent clamping capability
• Low incremental surge resistance
• Very fast response time
• 400W peak pulse capability with a 10/1000µs waveform,
repetition rate (duty cycle): 0.01% (200W above 91V)
• For devices with V(BR)≥10V, ID are typically less
than 1.0µA
• High temperature soldering guaranteed: 250°C/10
26/5K per 13" Reel (12mm tape), 60K/box
46/1.5K per 7" Reel (12mm tape), 30K/box
seconds at terminals
• Available in unidirectional only
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Symbol
Value
Unit
Peak pulse power dissipation with a
PPPM
Minimum 400
W
10/1000µs waveform(1)(Fig. 1)
Steady state power dissipation at TL = 75°C(2)
PM(AV)
IPPM
1.0
W
A
Peak pulse current with a 10/1000µs waveform(1)(Fig. 3)
See Next Table
Peak forward surge current, 8.3 ms single half sine-wave
unidirectional only(3)
IFSM
40
A
Maximum instantaneous forward voltage at 25A for
unidirectional only
VF
3.5
V
Operating junction and storage temperature range
TJ, TSTG
–55 to +150
°C
Notes: (1) Non-repetitive current pulse, per Fig.3 and derated above TA = 25°C per Fig. 2. Rating is 200W above 91V.
(2) Mounted on copper pads to each terminal of 0.31 in2 (8.0 mm2) per Fig. 5
(3) Measured at 8.3ms single half sine-wave or equivalent square wave duty cycle = 4 pulses per minute maximum
Document Number 88403
03-May-02
www.vishay.com
1
TGL41-6.8 thru TGL41-200A
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics(TA = 25°C unless otherwise noted)
Breakdown Voltage
Maximum Reverse
Leakage at
I (µA)
Maximum
Peak Pulse
Maximum
Clamping Voltage Temperature
Maximum
V
BR
(V)(1)
Test Current
at I
Stand-off Voltage
V
WM
V
Current I
(A)(2)
at I
PPM
V (V)
C
Coefficient
T
WM
D
PPM
Device Type
Min
Max
(mA)
(V)
of V (% / °C)
BR
TGL41-6.8
6.12
7.48
7.14
8.25
7.88
9.02
8.61
10.0
9.55
11.0
10.5
12.1
11.6
13.2
12.6
14.3
13.7
16.5
15.8
17.6
16.8
19.8
18.9
22.0
21.0
24.2
23.1
26.4
25.2
29.7
28.4
33.0
31.5
36.3
34.7
39.6
37.8
42.9
41.0
47.3
45.2
10
10
5.50
5.80
6.05
6.40
6.63
7.02
7.37
7.78
8.10
8.55
8.92
9.40
9.72
10.2
10.5
11.1
12.1
12.8
12.9
13.6
14.5
15.3
16.2
17.1
17.8
18.8
19.4
20.5
21.8
23.1
24.3
25.6
26.8
28.2
29.1
30.8
31.6
33.3
34.8
36.8
1000
37.0
38.1
34.2
35.4
32.0
33.1
29.0
29.9
26.7
27.6
24.7
25.6
23.1
24.0
21.1
22.0
18.2
18.9
17.0
17.8
15.1
15.9
13.7
14.4
12.5
13.1
11.5
12.0
10.2
10.7
9.2
10.8
10.5
11.7
11.3
12.5
12.1
13.8
13.4
15.0
14.5
16.2
15.6
17.3
16.7
19.0
18.2
22.0
21.2
23.5
22.5
26.5
25.2
29.1
27.7
31.9
30.6
34.7
33.2
39.1
37.5
43.5
41.4
47.7
45.7
52.0
49.9
56.4
53.9
61.9
59.3
0.060
0.060
0.064
0.064
0.068
0.068
0.071
0.071
0.076
0.076
0.078
0.078
0.081
0.081
0.084
0.084
0.087
0.087
0.089
0.089
0.091
0.091
0.093
0.093
0.095
0.095
0.097
0.097
0.099
0.099
0.100
0.100
0.101
0.101
0.102
0.102
0.103
0.103
0.104
0.104
TGL41-6.8A 6.45
TGL41-7.5 6.75
TGL41-7.5A 7.13
TGL41-8.2 7.38
TGL41-8.2A 7.79
TGL41-9.1 8.19
TGL41-9.1A 8.65
TGL41 -10 9.00
TGL41 -10A 9.50
TGL41 -11 9.90
TGL41 -11A 10.5
1000
500
500
200
200
50.0
50.0
10.0
10.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
10
10
10
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
TGL41-12
TGL41-12A
TGL41-13
TGL41-13A
TGL41-15
TGL41-15A
TGL41-16
TGL41-16A
TGL41-18
TGL41-18A
TGL41-20
TGL41-20A
TGL41-22
TGL41-22A
TGL41-24
TGL41-24A
TGL41-27
TGL41-27A
TGL41-30
TGL41-30A
TGL41-33
TGL41-33A
TGL41-36
TGL41-36A
TGL41-39
TGL41-39A
TGL41-43
TGL41-43A
10.8
11.4
11.7
12.4
13.5
14.3
14.4
15.2
16.2
17.1
18.0
19.0
19.8
20.9
21.6
22.8
24.3
25.7
27.0
28.5
29.7
31.4
32.4
34.2
35.1
37.1
38.7
40.9
9.7
8.4
8.8
7.7
8.0
7.1
7.4
6.5
6.7
www.vishay.com
2
Document Number 88403
03-May-02
TGL41-6.8 thru TGL41-200A
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics(TA = 25°C unless otherwise noted)
Breakdown Voltage
Maximum Reverse
Leakage at
I (µA)
Maximum
Peak Pulse
Maximum
Clamping Voltage Temperature
Maximum
V
BR
(V)(1)
Test Current
at I
Stand-off Voltage
V
WM
V
Current I
(A)(2)
at I
PPM
V (V)
C
Coefficient
T
WM
D
PPM
Device Type
Min
Max
(mA)
(V)
of V (% / °C)
BR
TGL41-47
TGL41-47A
TGL41-51
TGL41-51A
TGL41-56
TGL41-56A
TGL41-62
TGL41-62A
TGL41-68
TGL41-68A
TGL41-75
TGL41-75A
TGL41-82
TGL41-82A
TGL41-91
TGL41-91A
TGL41-100
42.3
44.7
45.9
48.5
50.4
53.2
55.8
58.9
61.2
64.6
67.5
71.3
73.8
77.9
81.9
86.5
90.0
51.7
49.4
56.1
53.6
61.6
58.8
68.2
65.1
74.8
71.4
82.5
78.8
90.2
86.1
100.0
95.50
110.0
105.0
121.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
38.1
40.2
5.0
5.9
6.2
67.8
64.8
73.5
70.1
80.5
77.0
89.0
85.0
98.0
92.0
108
103
118
113
131
125
144
137
158
152
173
165
187
179
215
207
230
219
244
234
258
246
287
274
0.104
0.104
0.105
0.105
0.106
0.106
0.107
0.107
0.107
0.107
0.108
0.108
0.108
0.108
0.109
0.109
0.109
0.109
0.110
0.110
0.110
0.110
0.110
0.110
0.111
0.111
0.111
0.111
0.111
0.111
0.111
0.111
0.111
0.111
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
41.3
5.4
43.6
5.7
45.4
5.0
47.8
5.2
50.2
4.5
53.0
4.7
55.1
4.1
58.1
4.3
60.7
3.7
64.1
3.9
66.4
3.4
70.1
3.5
73.7
3.1
77.8
3.2
81.0
1.39
1.46
1.27
1.32
1.16
1.21
1.07
1.12
0.93
0.97
0.87
0.91
0.82
0.85
0.78
0.81
0.70
0.73
TGL41-100A 95.0
TGL41-110 99.0
TGL41-110A 105.0 116.0
TGL41-120 108.0 132.0
TGL41-120A 114.0 126.0
TGL41-130 117.0 143.0
TGL41-130A 124.0 137.0
TGL41-150 135.0 165.0
TGL41-150A 143.0 158.0
TGL41-160 144.0 176.0
TGL41-160A 152.0 168.0
TGL41-170 153.0 187.0
TGL41-170A 162.0 179.0
TGL41-180 162.0 198.0
TGL41-180A 171.0 189.0
TGL41-200 180.0 220.0
TGL41-200A 190.0 210.0
85.5
89.2
94.0
97.2
102.0
105.0
111.0
121.0
128.0
130.0
136.0
138.0
145.0
146.0
154.0
162.0
171.0
Notes: (1) V(BR) measured after IT applied for 300µs square wave pulse or equivalent
(2) Surge current waveform per Figure 3 and derate per Fig.2
(3) All terms and symbols are consistent with ANSI/IEEE C62.35
Document Number 88403
03-May-02
www.vishay.com
3
TGL41-6.8 thru TGL41-200A
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Fig. 1 - Peak Pulse Power Rating Curve
Fig. 2 - Pulse Derating Curve
100
100
75
50
25
0
Non-Repetitive
Pulse Waveform
shown in Fig. 3
T
= 25°C
A
10
TGL41-6.8 TGL91A
1.0
0.1
TGL41-100 TGL200A
µ
µ
µ
10 s
µ
100 s
1.0ms
10ms
0
25
50
75
100
125
150
0.1 s
1.0 s
td, Pulse Width, sec.
T , Ambient Temperature (°C)
A
Fig. 3 – Pulse Waveform
Fig. 4 - Typical Junction Capacitance
150
10,000
TJ = 25°C
Pulse Width (td)
is defined as the point
tr = 10µsec.
Measured at Zero Bias
Peak Value
IPPM
where the peak current
decays to 50% of IPPM
100
50
0
1,000
100
10
Measured at Stand-off
Half Value — IPP
Voltage, V
IPPM
2
WM
10/1000µsec. Waveform
as defined by R.E.A.
T = 25°C
J
f = 1.0 MHz
Vsq = 50MVpp
Unidirectional
td
1.0
3.0
4.0
0
2.0
t — Time (ms)
1.0
10
, Breakdown Voltage (V)
100 200
V
(BR)
Fig. 5 - Steady State Power
Derating Curve
Fig. 6 - Maximum Non-Repetitive Peak Forward
Surge Current Unidirectional only
1.00
0.75
0.50
0.25
0
50
8.3ms single half sine-wave
60 Hz Resistive or
Inductive Load
(JEDEC method)
40
T = T max.
J
J
30
20
10
0
0.31 x 0.31 x 0.08" Copper pads
(8 x 8 x 2mm)
0
25
50
100
150 175 200
75
125
1
10
Number of Cycles at 60 Hz
100
T , Lead Temperature (°C)
L
www.vishay.com
4
Document Number 88403
03-May-02
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