TLCS5110-CS12 [VISHAY]
Visible LED, Clear;
VISHAY 
TLCS511.
Vishay Semiconductors
High Brightness LED, ∅ 5 mm Untinted Non-Diffused
FEATURES
• Untinted non diffused lens
• Utilizing ultrabright AllnGaP, OMA
technology
e2
• High luminous intensity
• High operating tempreature: T (chip
j
junction temperature) up to 125 °C for AllnGaP
devices
• Luminous intensity and color categorized for each
packing unit
19223
• ESD-withstand voltage: 2 kV acc. to MIL STD
883 D, Method 3015.7 for AllnGaP
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
DESCRIPTION
APPLICATIONS
The TLC.51.. series is a clear, non diffused 5 mm LED
for high end applications where supreme luminous
intensity required.
• Interior and exterior lighting
• Outdoor LED panels
• Instrumentation and front panel indicators
These lamps with clear untinted plastic case utilize the
highly developed ultrabright AlInGaP, OMA
Technologies.
The lens and the viewing angle is optimized to achieve
best performance of light output and visibility.
• Central high mounted stop lights (CHMSL) for
motor vehicles
• Replaces incandescent lamps
• Traffic signals
• Light guide design
PRODUCT GROUP AND PACKAGE DATA
• Product group: LED
• Package: 5 mm
• Product series: power
• Angle of half intensity: 9°
PARTS TABLE
PART
COLOR, LUMINOUS INTENSITY
Red, IV ≥ 7500 mcd
TECHNOLOGY
TLCS5110
AllnGaP on Si
Document Number 84628
Rev. 1.1, 25-Sep-07
www.vishay.com
1
TLCS511.
Vishay Semiconductors
1)
ABSOLUTE MAXIMUM RATINGS TLCS511.
PARAMETER
TEST CONDITION
SYMBOL
VR
VALUE
UNIT
V
Reverse voltage
5
50
DC Forward current
Tamb ≤ 85 °C
tp ≤ 10 µs
IF
mA
A
Surge forward current
Power dissipation
IFSM
PV
0.1
150
mW
°C
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
Tj
125
Tamb
Tstg
Tsd
- 40 to + 100
- 40 to + 100
260
°C
°C
t ≤ 5 s, 2 mm from body
°C
RthJA
300
K/W
Note:
1)
T
= 25 °C, unless otherwise specified
amb
1)
OPTICAL AND ELECTRICAL CHARACTERISTICS TLCS5110, RED
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN
7500
620
TYP.
MAX
UNIT
mcd
nm
Luminous intensity2)
Dominant wavelength
Peak wavelength
IF = 50 mA
IV
TLCS5110
20000
625
632
18
IF = 50 mA
IF = 50 mA
IF = 50 mA
IF = 50 mA
IF = 50 mA
IR = 10 μA
IF = 50 mA
IF = 50 mA
λd
λp
630
nm
Spectral bandwidth at 50 % Irel max
Δλ
ϕ
nm
Angle of half intensity
Forward voltage
9
deg
V
VF
2.2
3.0
VR
Reverse voltage
5
V
Temperature coefficient of VF
Temperature coefficient of λd
TCVF
TCλd
- 2.0
0.05
mV/K
nm/K
Note:
1)
T
= 25 °C, unless otherwise specified
amb
2) In one Packing Unit IVmax/IVmin ≤ 2.0
LUMINOUS INTENSITY CLASSIFICATION
LIGHT INTENSITY (MCD)/LUMINOUS FLUX (MLM)
GROUP
MIN
MAX
11500
15000
20000
27000
36000
48000
64000
86000
115000
LL
MM
NN
PP
QQ
RR
SS
TT
5750
7500
10000
13500
18000
24000
32000
43000
57500
UU
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2
Document Number 84628
Rev. 1.1, 25-Sep-07
TLCS511.
Vishay Semiconductors
TYPICAL CHARACTERISTICS
T
= 25 °C, unless otherwise specified
amb
250
200
150
100
50
100
90
red
Red
30 mA
80
70
60
50
40
30
20
10
50 mA
10 mA
0
- 50
- 100
- 150
- 200
0
- 50 - 25
0
25
50
75
100
1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5
T
amb
- Ambient Temperature (°C)
15974_5
V - Forward Voltage (V)
F
17039_2
Figure 1. Forward Current vs. Forward Voltage
Figure 4. Change of Forward Voltage vs. Ambient Temperature
60
50
2.5
Red
2.0
40
30
20
10
0
red
1.5
1.0
0.5
0.0
0
20
40
60
80
100 120
- 50 - 25
0
25
50
75
100
16710_2
17040-2
T
amb
- Ambient Temperature (°C)
T
amb
- Ambient Temperature (°C)
Figure 2. Forward Current vs. Ambient Temperature
Figure 5. Relative Luminous Intensity vs. Ambient Temperature
0°
10°
20°
1.2
red
1.0
30°
40°
0.8
0.6
0.4
0.2
0.0
1.0
0.9
50°
60°
0.8
70°
0.7
80°
0.6 0.4 0.2
0
0.2
0.4
0.6
570
590
610
630
650
670
16007
λ - Wavelength (nm)
94 8351
Figure 3. Relative Intensity vs. Wavelength
Figure 6. Relative Sensitivity
Document Number 84628
Rev. 1.1, 25-Sep-07
www.vishay.com
3
TLCS511.
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters
9612121
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4
Document Number 84628
Rev. 1.1, 25-Sep-07
TLCS511.
Vishay Semiconductors
OZONE DEPLETING SUBSTANCES POLICY STATEMENT
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or
unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and
expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such
unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 84628
Rev. 1.1, 25-Sep-07
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5
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
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