TLHG4205 [VISHAY]

High Efficiency LED, 3 mm Tinted Undiffused Package; 高效率LED , 3毫米有色未扩散套餐
TLHG4205
型号: TLHG4205
厂家: VISHAY    VISHAY
描述:

High Efficiency LED, 3 mm Tinted Undiffused Package
高效率LED , 3毫米有色未扩散套餐

可见光LED 光电
文件: 总10页 (文件大小:308K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
TLHG / O / P / R / Y420.  
VISHAY  
Vishay Semiconductors  
High Efficiency LED, 3 mm Tinted Undiffused Package  
Description  
The TLH.42.. series was developed for standard  
applications like general indicating and lighting pur-  
poses.  
It is housed in a 3 mm tinted clear plastic package.  
The wide viewing angle of these devices provides a  
high on-off contrast.  
19220  
Several selection types with different luminous inten-  
sities are offered. All LEDs are categorized in lumi-  
nous intensity groups. The green and yellow LEDs  
are categorized additionally in wavelength groups.  
Pb  
e3  
Pb-free  
That allows users to assemble LEDs with uniform  
appearance.  
Applications  
Status lights  
OFF / ON indicator  
Background illumination  
Readout lights  
Features  
• Choice of five bright colors  
• Standard T-1 package  
• Small mechanical tolerances  
• Suitable for DC and high peak current  
• Wide viewing angle  
Maintenance lights  
Legend light  
• Luminous intensity categorized  
• Yellow and green color categorized  
• Lead-free device  
Parts Table  
Part  
Color, Luminous Intensity  
Red, I > 4 mcd  
Angle of Half Intensity ( ϕ)  
Technology  
GaAsP on GaP  
TLHR4200  
TLHR4201  
TLHR4205  
TLHO4200  
TLHO4201  
TLHY4200  
TLHY4201  
TLHY4205  
TLHG4200  
TLHG4201  
TLHG4205  
TLHP4200  
TLHP4201  
22 °  
V
Red, I > 6.3 mcd  
22 °  
22 °  
22 °  
22 °  
22 °  
22 °  
22 °  
22 °  
22 °  
22 °  
22 °  
22 °  
GaAsP on GaP  
GaAsP on GaP  
GaAsP on GaP  
GaAsP on GaP  
GaAsP on GaP  
GaAsP on GaP  
GaAsP on GaP  
GaP on GaP  
V
Red, I > 10 mcd  
V
Soft orange, I > 4 mcd  
V
Soft orange, I > 10 mcd  
V
Yellow, I > 4 mcd  
V
Yellow, I > 6.3 mcd  
V
Yellow, I > 10 mcd  
V
Green, I > 6.3 mcd  
V
Green, I > 10 mcd  
GaP on GaP  
V
Green, I > 16 mcd  
GaP on GaP  
V
Pure green, I > 2.5 mcd  
GaP on GaP  
V
Pure green, I > 6.3 mcd  
GaP on GaP  
V
Document Number 83005  
Rev. 1.3, 31-Aug-04  
www.vishay.com  
1
TLHG / O / P / R / Y420.  
Vishay Semiconductors  
VISHAY  
Absolute Maximum Ratings  
T
= 25 °C, unless otherwise specified  
amb  
TLHR42.. ,TLHO42.. , TLHY42.. , TLHG42.. , TLHP42..  
Parameter Test condition  
Reverse voltage  
Symbol  
Value  
6
Unit  
V
V
R
DC Forward current  
I
30  
mA  
A
F
Surge forward current  
Power dissipation  
t
10 µs  
I
1
100  
p
FSM  
T
60 °C  
P
mW  
°C  
amb  
V
Junction temperature  
Operating temperature range  
Storage temperature range  
Soldering temperature  
T
100  
j
T
- 40 to + 100  
- 55 to + 100  
260  
°C  
amb  
T
°C  
stg  
t 5 s, 2 mm from body  
T
°C  
sd  
Thermal resistance junction/  
ambient  
R
400  
K/W  
thJA  
Optical and Electrical Characteristics  
T
= 25 °C, unless otherwise specified  
amb  
Red  
TLHR42..  
Parameter  
Test condition  
= 10 mA  
Part  
Symbol  
Min  
4
Typ.  
Max  
Unit  
mcd  
1)  
I
TLHR4200  
TLHR4201  
TLHR4205  
I
I
I
8
Luminous intensity  
F
V
V
V
6.3  
10  
10  
15  
mcd  
mcd  
nm  
nm  
deg  
V
Dominant wavelength  
Peak wavelength  
I
I
I
I
I
= 10 mA  
= 10 mA  
= 10 mA  
= 20 mA  
= 10 µA  
λ
λ
612  
625  
3
F
F
F
F
R
d
p
635  
22  
2
Angle of half intensity  
Forward voltage  
ϕ
V
V
F
Reverse voltage  
6
15  
50  
V
R
Junction capacitance  
V
= 0, f = 1 MHz  
C
pF  
R
j
1)  
in one Packing Unit I  
/I  
0.5  
Vmin Vmax  
Soft Orange  
TLHO42..  
Parameter  
Test condition  
= 10 mA  
Part  
Symbol  
Min  
4
Typ.  
10  
Max  
611  
Unit  
mcd  
1)  
I
TLHO4200  
I
I
Luminous intensity  
F
V
TLHO4201  
10  
18  
mcd  
nm  
nm  
deg  
V
V
Dominant wavelength  
Peak wavelength  
I
I
I
I
= 10 mA  
= 10 mA  
= 10 mA  
= 20 mA  
= 6 V  
λ
λ
598  
F
F
F
F
d
605  
22  
p
Angle of half intensity  
Forward voltage  
ϕ
V
I
2.4  
3
F
Reverse current  
V
V
10  
µA  
pF  
R
R
Junction capacitance  
= 0, f = 1 MHz  
C
50  
R
j
1)  
in one Packing Unit I  
/I  
0.5  
Vmin Vmax  
www.vishay.com  
2
Document Number 83005  
Rev. 1.3, 31-Aug-04  
TLHG / O / P / R / Y420.  
VISHAY  
Vishay Semiconductors  
Yellow  
TLHY42..  
Parameter  
Test condition  
Part  
Symbol  
Min  
4
Typ.  
10  
Max  
Unit  
mcd  
1)  
I = 10 mA  
TLHY4200  
I
I
I
Luminous intensity  
F
V
V
V
TLHY4201  
TLHY4205  
6.3  
10  
15  
20  
mcd  
mcd  
nm  
nm  
deg  
V
Dominant wavelength  
Peak wavelength  
I = 10 mA  
λ
λ
581  
594  
3
F
d
p
I = 10 mA  
585  
22  
F
Angle of half intensity  
Forward voltage  
I = 10 mA  
ϕ
F
I = 20 mA  
V
V
2.4  
15  
F
F
Reverse voltage  
I
= 10 µA  
6
V
R
R
Junction capacitance  
V
= 0, f = 1 MHz  
C
50  
pF  
R
j
1)  
in one Packing Unit I  
/I  
0.5  
Vmin Vmax  
Green  
TLHG42..  
Parameter  
Test condition  
Part  
Symbol  
Min  
6.3  
Typ.  
10  
Max  
Unit  
mcd  
1)  
I = 10 mA  
TLHG4200  
I
I
I
Luminous intensity  
F
V
V
V
TLHG4201  
TLHG4205  
10  
16  
15  
20  
mcd  
mcd  
nm  
nm  
deg  
V
Dominant wavelength  
Peak wavelength  
I = 10 mA  
λ
λ
562  
575  
3
F
d
p
I = 10 mA  
565  
22  
F
Angle of half intensity  
Forward voltage  
I = 10 mA  
ϕ
F
I = 20 mA  
V
V
2.4  
15  
F
F
Reverse voltage  
I
= 10 µA  
6
V
R
R
Junction capacitance  
V
= 0, f = 1 MHz  
C
50  
pF  
R
j
1)  
in one Packing Unit I  
/I  
0.5  
Vmin Vmax  
Pure green  
TLHP42..  
Parameter  
Test condition  
Part  
Symbol  
Min  
2.5  
Typ.  
7
Max  
Unit  
mcd  
1)  
I = 10 mA  
TLHP4200  
I
I
F
V
V
Luminous intensity  
TLHP4201  
6.3  
20  
mcd  
nm  
nm  
deg  
V
Dominant wavelength  
Peak wavelength  
I = 10 mA  
λ
λ
555  
565  
F
d
p
I = 10 mA  
555  
22  
F
Angle of half intensity  
Forward voltage  
I = 10 mA  
ϕ
F
I = 20 mA  
V
V
2.4  
15  
3
F
F
Reverse voltage  
I
= 10 µA  
6
V
R
R
Junction capacitance  
V
= 0, f = 1 MHz  
C
50  
pF  
R
j
1)  
in one Packing Unit I  
/I  
0.5  
Vmin Vmax  
Document Number 83005  
Rev. 1.3, 31-Aug-04  
www.vishay.com  
3
TLHG / O / P / R / Y420.  
Vishay Semiconductors  
VISHAY  
Typical Characteristics (Tamb = 25 °C unless otherwise specified)  
0°  
10°  
20°  
30°  
125  
100  
40°  
1.0  
75  
0.9  
50°  
60°  
50  
25  
0.8  
0.7  
70°  
80°  
0
0.6  
0.6 0.4 0.2  
0
0.2  
0.4  
0
20  
40  
60  
80  
100  
95 10041  
T
amb  
- Ambient Temperature ( °C )  
9510904  
Figure 1. Power Dissipation vs. Ambient Temperature  
Figure 4. Rel. Luminous Intensity vs. Angular Displacement  
1000  
Red  
60  
50  
100  
40  
30  
20  
10  
0
t
t
/T = 0.001  
= 10 µs  
p
p
10  
1
0.1  
0
2
4
6
8
10  
0
20  
40  
60  
80  
100  
V
- Forward Voltage ( V )  
F
T
amb  
- Ambient Temperature ( °C )  
95 10026  
95 10905  
Figure 2. Forward Current vs. Ambient Temperature for InGaN  
Figure 5. Forward Current vs. Forward Voltage  
1.6  
10000  
Red  
T
amb  
65°C  
t /T= 0.01  
p
1.2  
1000  
100  
0.02  
0.05  
0.8  
1
0.4  
0
10  
1
0.2  
0.1  
0.5  
I
= 10 mA  
F
100  
0
20  
40  
60  
80  
100  
0.01  
0.1  
t
1
10  
T
- Ambient Temperature ( °C )  
95 10027  
- Pulse Length ( ms )  
95 10047  
amb  
p
Figure 3. Forward Current vs. Pulse Length  
Figure 6. Rel. Luminous Intensity vs. Ambient Temperature  
www.vishay.com  
4
Document Number 83005  
Rev. 1.3, 31-Aug-04  
TLHG / O / P / R / Y420.  
VISHAY  
Vishay Semiconductors  
100  
2.4  
Soft Orange  
Red  
2.0  
10  
1
1.6  
1.2  
0.8  
0.4  
0
0.1  
0
1
2
3
4
5
I
(mA)  
10  
20  
0.5  
50  
100 200  
0.1 0.05  
500  
F
V
- Forward Voltage ( V )  
95 9990  
F
95 10321  
t /T  
p
1
0.2  
0.02  
Figure 7. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle  
Figure 10. Forward Current vs. Forward Voltage  
10  
2.0  
Red  
Soft Orange  
1.6  
1
0.1  
1.2  
0.8  
0.4  
0
0.01  
1
10  
100  
0
20  
40  
60  
80  
100  
I
- Forward Current ( mA )  
95 10029  
95 9994  
T
amb  
- Ambient Temperature (°C )  
F
Figure 8. Relative Luminous Intensity vs. Forward Current  
Figure 11. Rel. Luminous Intensity vs. Ambient Temperature  
1.2  
2.4  
Red  
1.0  
Soft Orange  
2.0  
1.6  
1.2  
0.8  
0.8  
0.6  
0.4  
0.2  
0
0.4  
0
690  
590  
610  
630  
650  
670  
I
(mA)  
10  
20  
50  
100 200  
0.1 0.05  
500  
F
λ -ı Wavelength ( nm )  
95 10040  
95 10259  
t /T  
p
1
0.5  
0.2  
0.02  
Figure 9. Relative Intensity vs. Wavelength  
Figure 12. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle  
Document Number 83005  
Rev. 1.3, 31-Aug-04  
www.vishay.com  
5
TLHG / O / P / R / Y420.  
Vishay Semiconductors  
VISHAY  
10  
1.6  
1.2  
Yellow  
Soft Orange  
1
0.8  
0.1  
0.4  
0
I
= 10 mA  
20  
F
0.01  
1
10  
100  
100  
0
40  
60  
80  
I
- Forward Current ( mA )  
T
amb  
- Ambient Temperature ( °C )  
95 9997  
95 10031  
F
Figure 13. Relative Luminous Intensity vs. Forward Current  
Figure 16. Rel. Luminous Intensity vs. Ambient Temperature  
1.2  
2.4  
Soft Orange  
1.0  
Yellow  
2.0  
0.8  
0.6  
0.4  
0.2  
1.6  
1.2  
0.8  
0.4  
0
0
670  
I
(mA)  
570  
590  
610  
630  
650  
10  
20  
50  
100 200  
0.1 0.05  
500  
F
λ - Wavelength ( nm )  
95 10324  
95 10260  
t /T  
p
1
0.5  
0.2  
0.02  
Figure 14. Relative Intensity vs. Wavelength  
Figure 17. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle  
1000  
10  
Yellow  
Yellow  
100  
10  
1
t
t
/T = 0.001  
= 10 µs  
p
p
0.1  
1
0.1  
0.01  
0
2
4
6
8
10  
1
10  
100  
V
- Forward Voltage ( V )  
I
- Forward Current ( mA )  
F
95 10030  
95 10033  
F
Figure 15. Forward Current vs. Forward Voltage  
Figure 18. Relative Luminous Intensity vs. Forward Current  
www.vishay.com  
6
Document Number 83005  
Rev. 1.3, 31-Aug-04  
TLHG / O / P / R / Y420.  
VISHAY  
Vishay Semiconductors  
1.2  
2.4  
Green  
2.0  
Yellow  
1.0  
0.8  
0.6  
0.4  
1.6  
1.2  
0.8  
0.4  
0.2  
0
0
I (mA)  
650  
550  
570  
590  
610  
630  
10  
1
20  
50  
100 200  
0.05  
500  
F
t /T  
p
0.5  
0.2 0.1  
0.02  
- W- avelength ( nm )  
95 10039  
95 10263  
Figure 19. Relative Intensity vs. Wavelength  
Figure 22. Specific Luminous Intensity vs. Forward Current  
1000  
100  
10  
Green  
Green  
1
t
t
/T = 0.001  
= 10 µs  
p
p
10  
0.1  
1
0.1  
1
10  
100  
0
2
4
6
8
10  
I
- Forward Current ( mA )  
V
- Forward Voltage ( V )  
95 10034  
95 10037  
F
F
Figure 20. Forward Current vs. Forward Voltage  
Figure 23. Relative Luminous Intensity vs. Forward Current  
1.6  
1.2  
Green  
Green  
1.0  
1.2  
0.8  
0.6  
0.4  
0.2  
0.8  
0.4  
0
I
= 10 mA  
F
0
620  
0
20  
40  
60  
80  
100  
520  
540  
560  
580  
600  
T
- Ambient Temperature (°C )  
λ - W- avelength ( nm )  
95 10035  
95 10038  
amb  
Figure 21. Rel. Luminous Intensity vs. Ambient Temperature  
Figure 24. Relative Intensity vs. Wavelength  
Document Number 83005  
Rev. 1.3, 31-Aug-04  
www.vishay.com  
7
TLHG / O / P / R / Y420.  
Vishay Semiconductors  
VISHAY  
100  
10  
1
Pure Green  
Pure Green  
10  
1
0.1  
0.01  
0.1  
5
1
10  
- Forward Current ( mA )  
100  
0
1
2
3
4
95 9988  
95 9998  
I
F
V
Forward Voltage ( V )  
F
Figure 25. Forward Current vs. Forward Voltage  
Figure 28. Relative Luminous Intensity vs. Forward Current  
2.0  
1.2  
Pure Green  
Pure Green  
1.0  
1.6  
0.8  
0.6  
0.4  
1.2  
0.8  
0.4  
0
0.2  
0
0
20  
40  
60  
80  
100  
600  
500  
520  
540  
560  
580  
95 9991  
T
amb  
Ambient Temperature ( °C )  
95 10325  
λ - Wavelength ( nm )  
Figure 26. Rel. Luminous Intensity vs. Ambient Temperature  
Figure 29. Relative Intensity vs. Wavelength  
2.4  
Pure Green  
2.0  
1.6  
1.2  
0.8  
0.4  
0
10  
100  
1000  
95 10261  
I
- Forward Current ( mA )  
F
Figure 27. Specific Luminous Intensity vs. Forward Current  
www.vishay.com  
8
Document Number 83005  
Rev. 1.3, 31-Aug-04  
TLHG / O / P / R / Y420.  
VISHAY  
Vishay Semiconductors  
Package Dimensions in mm  
95 10913  
Document Number 83005  
Rev. 1.3, 31-Aug-04  
www.vishay.com  
9
TLHG / O / P / R / Y420.  
Vishay Semiconductors  
VISHAY  
Ozone Depleting Substances Policy Statement  
It is the policy of Vishay Semiconductor GmbH to  
1. Meet all present and future national and international statutory requirements.  
2. Regularly and continuously improve the performance of our products, processes, distribution and  
operatingsystems with respect to their impact on the health and safety of our employees and the public, as  
well as their impact on the environment.  
It is particular concern to control or eliminate releases of those substances into the atmosphere which are  
known as ozone depleting substances (ODSs).  
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs  
and forbid their use within the next ten years. Various national and international initiatives are pressing for an  
earlier ban on these substances.  
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the  
use of ODSs listed in the following documents.  
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments  
respectively  
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental  
Protection Agency (EPA) in the USA  
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.  
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting  
substances and do not contain such substances.  
We reserve the right to make changes to improve technical design  
and may do so without further notice.  
Parameters can vary in different applications. All operating parameters must be validated for each  
customer application by the customer. Should the buyer use Vishay Semiconductors products for any  
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all  
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal  
damage, injury or death associated with such unintended or unauthorized use.  
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany  
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423  
www.vishay.com  
10  
Document Number 83005  
Rev. 1.3, 31-Aug-04  

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