TLLG5401-CS21Z [VISHAY]
Visible LED, GENERAL PURPOSE VISIBLE DOME-STYLE LED,GREEN,DIFFUSED,LED-2B;型号: | TLLG5401-CS21Z |
厂家: | VISHAY |
描述: | Visible LED, GENERAL PURPOSE VISIBLE DOME-STYLE LED,GREEN,DIFFUSED,LED-2B |
文件: | 总8页 (文件大小:119K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
TLLG/R/Y540.
Vishay Semiconductors
Low Current LED in ∅ 5 mm Tinted Diffused Package
FEATURES
• Low power consumption
• High brightness
• CMOS/MOS compatible
• Specified at I = 2 mA
F
• Luminous intensity categorized
• Yellow and green color categorized
• Lead (Pb)-free device
19223
PRODUCT GROUP AND PACKAGE DATA
• Product group: LED
APPLICATIONS
• Low power DC circuits
• Package: 5 mm
• Product series: low current
• Angle of half intensity: 25°
PARTS TABLE
PART
COLOR, LUMINOUS INTENSITY
TECHNOLOGY
Red, IV > 0.63 mcd
Red, IV > 1 mcd
TLLR5400
TLLR5401
TLLY5400
TLLY5401
TLLG5400
TLLG5401
GaAsP on GaP
GaAsP on GaP
GaAsP on GaP
GaAsP on GaP
GaP on GaP
Yellow, IV > 0.63 mcd
Yellow, IV > 1 mcd
Green, IV > 0.63 mcd
Green, IV > 1 mcd
GaP on GaP
1)
ABSOLUTE MAXIMUM RATINGS TLL.540.
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
V
VR
Reverse voltage
6
Tamb ≤ 90 °C
tp ≤ 10 μs
IF
IFSM
PV
DC Forward current
Surge forward current
Power dissipation
7
0.15
mA
A
Tamb ≤ 90 °C
20
mW
°C
Tj
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
100
Tamb
Tstg
Tsd
- 40 to + 100
- 55 to + 100
260
°C
°C
t ≤ 5 s, 2 mm from body
°C
Thermal resistance junction/
ambient
RthJA
500
K/W
Note:
1)
T
= 25 °C, unless otherwise specified
amb
Document Number 83030
Rev. 1.5, 13-Sep-07
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1
TLLG/R/Y540.
Vishay Semiconductors
1)
OPTICAL AND ELECTRICAL CHARACTERISTICS TLLR540., RED
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN
0.63
1
TYP.
1.2
2
MAX
625
2.4
UNIT
mcd
mcd
nm
nm
deg
V
IV
TLLR5400
TLLR5401
Luminous intensity 2)
IF = 2 mA
IV
λd
λp
IF = 2 mA
IF = 2 mA
Dominant wavelength
Peak wavelength
612
635
25
IF = 2 mA
Angle of half intensity
Forward voltage
ϕ
IF = 2 mA
VF
VR
Cj
1.9
20
IR = 10 μA
Reverse voltage
6
V
VR = 0, f = 1 MHz
Junction capacitance
50
pF
Note:
1)
T
= 25 °C, unless otherwise specified
amb
2) in one packing unit IVmin/IVmax ≤ 0.5
1)
OPTICAL AND ELECTRICAL CHARACTERISTICS TLLY540., YELLOW
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN
0.63
1
TYP.
1.2
2
MAX
594
2.9
UNIT
mcd
mcd
nm
nm
deg
V
IV
TLLY5400
TLLY5401
Luminous intensity 2)
IF = 2 mA
IV
λd
λp
IF = 2 mA
IF = 2 mA
IF = 2 mA
IF = 2 mA
IR = 10 μA
Dominant wavelength
Peak wavelength
581
585
25
Angle of half intensity
Forward voltage
ϕ
VF
VR
Cj
2.4
20
Reverse voltage
6
V
VR = 0, f = 1 MHz
Junction capacitance
50
pF
Note:
1)
T
= 25 °C, unless otherwise specified
amb
2) in one packing unit IVmin/IVmax ≤ 0.5
1)
OPTICAL AND ELECTRICAL CHARACTERISTICS TLLG540., GREEN
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN
0.63
1
TYP.
1.2
2
MAX
575
2.4
UNIT
mcd
mcd
nm
nm
deg
V
IV
TLLG5400
TLLG5401
Luminous intensity 2)
IF = 2 mA
IV
λd
λp
IF = 2 mA
IF = 2 mA
Dominant wavelength
Peak wavelength
562
565
25
IF = 2 mA
Angle of half intensity
Forward voltage
ϕ
IF = 2 mA
VF
VR
Cj
1.9
20
IR = 10 μA
Reverse voltage
6
V
VR = 0, f = 1 MHz
Junction capacitance
50
pF
Note:
1)
T
= 25 °C, unless otherwise specified
amb
2) in one packing unit IVmin/IVmax ≤ 0.5
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Document Number 83030
Rev. 1.5, 13-Sep-07
TLLG/R/Y540.
Vishay Semiconductors
TYPICAL CHARACTERISTICS
T
= 25 °C, unless otherwise specified
amb
100
10
1
25
20
15
red
10
5
tP/T = 0.001
tP = 10 µs
0.1
0
0
20
40
60
80
100
0
1
2
3
4
5
Tamb - Ambient Temperature (°C)
95 10063
95 10050
VF - Forward Voltage (V)
Figure 1. Power Dissipation vs. Ambient Temperature
Figure 4. Forward Current vs. Forward Voltage
2.0
red
1.6
10
8
1.2
6
0.8
4
2
0
0.4
IF = 2 mA
0
0
20
40
60
80
100
100
0
20
40
60
80
95 10064
Tamb - Ambient Temperature (°C)
95 10051
Tamb - Ambient Temperature (°C)
Figure 2. Forward Current vs. Ambient Temperature
Figure 5. Rel. Luminous Intensity vs. Ambient Temperature
0
10°
20°
2.4
red
2.0
30°
40°
1.6
1.2
0.8
1.0
0.9
50°
60°
0.8
70°
0.4
0
0.7
80°
0.6
IF (mA)
tp/T
0.6 0.4 0.2
0
0.2
0.4
10
1
20
50
100 200
0.1 0.05
500
95 10060
0.5
0.2
0.02
96 11490
Figure 3. Rel. Luminous Intensity vs. Angular Displacement
Figure 6. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle
Document Number 83030
Rev. 1.5, 13-Sep-07
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TLLG/R/Y540.
Vishay Semiconductors
100
2.0
1.6
1.2
yellow
red
10
1
0.8
0.1
0.4
0.01
0
0
20
40
60
80
100
0.1
1
10
100
95 10061
95 10054
T
amb - Ambient Temperature (°C)
IF - Forward Current (mA)
Figure 7. Relative Luminous Intensity vs. Forward Current
Figure 10. Rel. Luminous Intensity vs. Ambient Temperature
1.2
red
1.0
2.4
yellow
2.0
1.6
1.2
0.8
0.8
0.6
0.4
0.2
0
0.4
0
690
590
610
630
650
670
IF (mA)
0.02 tp/T
10
1
20
0.5
50
0.2
100 200
0.1 0.05
500
96 11590
λ - Wavelength (nm)
95 10040
Figure 8. Relative Intensity vs. Wavelength
Figure 11. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle
100
100
yellow
yellow
10
1
10
1
0.1
tP/T = 0.001
t
P = 10 µs
0.1
0.01
4
5
0
1
2
3
0.1
1
10
100
95 10053
VF - Forward Voltage (V)
95 10062
IF - Forward Current (mA)
Figure 9. Forward Current vs. Forward Voltage
Figure 12. Relative Luminous Intensity vs. Forward Current
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Document Number 83030
Rev. 1.5, 13-Sep-07
TLLG/R/Y540.
Vishay Semiconductors
2.4
2.0
1.6
1.2
0.8
1.2
1.0
green
yellow
0.8
0.6
0.4
0.4
0
0.2
0
650
IF (mA)
tp/T
10
20
50
100 200
0.1 0.05
500
550
570
590
610
630
96 11591
λ - Wavelength (nm)
95 10039
1
0.5
0.2
0.02
Figure 13. Relative Intensity vs. Wavelength
Figure 16. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle
100
100
Green
10
Green
10
1
1
0.1
t /T= 0.001
p
t = 10 µs
p
0.1
0.01
4
5
0
1
2
3
100
0.1
1
10
VF - Forward Voltage (V)
95 10056
IF - Forward Current (mA)
95 10059
Figure 14. Forward Current vs. Forward Voltage
Figure 17. Relative Luminous Intensity vs. Forward Current
1.6
1.2
Green
green
1.0
1.2
0.8
0.4
0.8
0.6
0.4
I
= 2 mA
20
F
0.2
0
0
100
0
40
60
80
620
520
540
560
580
600
Tamb - Ambient Temperature (°C)
95 10057
λ - Wavelength (nm)
95 10038
Figure 15. Rel. Luminous Intensity vs. Ambient Temperature
Figure 18. Relative Intensity vs. Wavelength
Document Number 83030
Rev. 1.5, 13-Sep-07
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TLLG/R/Y540.
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters
95 10916
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Document Number 83030
Rev. 1.5, 13-Sep-07
TLLG/R/Y540.
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or
unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs,
damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death
associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 83030
Rev. 1.5, 13-Sep-07
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Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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