TLME3100-GS08 [VISHAY]
Visible LED, Clear;
VISHAY 
TLME3100
Vishay Telefunken
High Intensity SMD LED High Intensity SMD LED
Color
Type
TLME3100
Technology
Angle of Half Intensity
±
60
Yellow
AlInGaP on GaAs
Description
This device has been designed to meet the increasing
demand for AlInGaP technology.
The package of the TLME3100 is the P–LCC–2
(equivalent to a size B tantalum capacitor).
It consists of a lead frame which is surrounded with a
white thermoplast. The reflector inside this package is
filled up with clear epoxy.
Features
SMD LED with exceptional brightness
Luminous intensity categorized
94 8553
Compatible with automatic placement equipment
EIA and ICE standard package
Compatible with infrared, vapor phase and wave
solder processes according to CECC
Available in 8 mm tape
Low profile package
Non-diffused lens: excellent for coupling to light
pipes and backlighting
Low power consumption
Luminous intensity ratio in one packaging unit
I
/I
2.0
Vmax Vmin
Applications
Automotive: backlighting in dashboards and switches
Telecommunication: indicator and backlighting in telephone and fax
Indicator and backlight for audio and video equipment
Indicator and backlight in office equipment
Flat backlight for LCDs, switches and symbols
General use
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Document Number 83038
Rev. A1, 04-Feb-99
1 (6)
TLME3100
Vishay Telefunken
Absolute Maximum Ratings
T
amb
= 25 C, unless otherwise specified
TLME3100
Parameter
Reverse voltage
Test Conditions
Symbol
Value
5
Unit
V
V
R
DC forward current
Surge forward current
Power dissipation
T
≤ 60 C
I
30
0.1
80
mA
A
mW
C
amb
F
t ≤ 10 s
I
FSM
P
T
p
T
amb
≤ 60 C
V
Junction temperature
100
j
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
T
T
T
–40 to +100
–55 to +100
260
C
C
C
K/W
amb
stg
t ≤ 5 s
mounted on PC board
(pad size > 16 mm )
sd
R
thJA
400
2
Optical and Electrical Characteristics
T
amb
= 25 C, unless otherwise specified
Yellow (TLME3100 )
Parameter
Luminous intensity
Dominant wavelength
Peak wavelength
Angle of half intensity
Forward voltage
Test Conditions
I = 10 mA
Type
Symbol Min
Typ
50
588
590
±60
2
Max
Unit
I
25
581
mcd
nm
nm
deg
V
F
V
d
p
I = 10 mA
594
2.6
F
I = 10 mA
F
I = 10 mA
ϕ
F
I = 20 mA
F
V
F
Reverse voltage
I = 10 A
R
V
R
5
V
Junction capacitance
V = 0, f = 1 MHz
R
C
j
15
pF
Typical Characteristics (Tamb = 25 C, unless otherwise specified)
125
100
75
60
50
40
30
20
10
0
50
25
0
100
100
0
20
40
60
80
0
20
40
60
80
95 10887
T
amb
– Ambient Temperature ( °C )
95 10894
T
amb
– Ambient Temperature ( °C )
Figure 1 Power Dissipation vs. Ambient Temperature
Figure 2 Forward Current vs. Ambient Temperature
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Document Number 83038
Rev. A1, 04-Feb-99
TLME3100
Vishay Telefunken
0°
10
°
20
°
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
30°
40°
1.0
0.9
50°
60°
0.8
0.7
70°
80°
1
10
1
I (mA)
F
0.6
2
5
5
2
20
50
0.6
0.4
0.2
0
0.2
0.4
96 11589 10
0.5
0.2
t /T
p
95 10319
Figure 3 Rel. Luminous Intensity vs.
Angular Displacement
Figure 6 Rel. Lumin. Intensity vs.
Forw. Current/Duty Cycle
100
10
1
10.00
1.00
0.10
0.01
1
1
1.5
2.0
2.5
3.0
10
100
95 10878
V
– Forward Voltage ( V )
96 11588
I – Forward Current ( mA )
F
F
Figure 4 Forward Current vs. Forward Voltage
Figure 7 Relative Luminous Intensity vs. Forward Current
1.6
1.2
I
= 10 mA
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
F
I
= 10 mA
F
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
10 20 30 40 50 60 70 80 90 100
– Ambient Temperature ( °C )
550 560 570 580 590 600 610 620 630 640 650
95 10880
T
amb
95 10881 – Wavelength ( nm )
Figure 5 Rel. Luminous Intensity vs.
Ambient Temperature
Figure 8 Relative Luminous Intensity vs. Wavelength
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Document Number 83038
Rev. A1, 04-Feb-99
3 (6)
TLME3100
Vishay Telefunken
Dimensions in mm
95 11314
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4 (6)
Document Number 83038
Rev. A1, 04-Feb-99
TLME3100
Vishay Telefunken
PCB Layout in mm
95 10966
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Document Number 83038
Rev. A1, 04-Feb-99
5 (6)
TLME3100
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
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6 (6)
Document Number 83038
Rev. A1, 04-Feb-99
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