TLMP1100 [VISHAY]
Ultrabright 0603 LED; 超亮LED 0603
| 型号： | TLMP1100 |
| 厂家： | 
VISHAY |
| 描述： | Ultrabright 0603 LED |
| 文件： | 总15页 (文件大小：302K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TLMB / G / O / P / S / Y1100
VISHAY
Vishay Semiconductors
Ultrabright 0603 LED
Description
The new 0603 LED series have been designed in the
smallest SMD package. This innovative 0603 LED
technology opens the way to
• smaller products of higher performance
• more design in flexibility
• enhanced applications
18562
The 0603 LED is an obvious solution for small-scale,
high power products that are expected to work reli-
ability in an arduous environment.
Pb
e3
Pb-free
Features
Applications
• Smallest SMD package 0603 with exceptional
brightness 1.6 mm x 0.8 mm x 0.6 mm (L x W x H)
Backlight keypads
Navigation systems
• High reliability lead frame based
• Temperature range - 40 °C to + 100 °C
• Footprint compatible to 0603 chipled
Cellular phone displays
Displays for industrial control systems
Automotive features
Miniaturized color effects
Traffic displays
• Wavelength 470 nm (blue), 570 nm (green),
560 nm (pure green), 587 nm (yellow),
606 nm orange), 633 nm (red)
• AllnGaP and GaN technology
Parts Table
• Viewing angle: extremely wide 160 °
• Grouping parameter: luminous intensity,
wavelength
• Available in 8 mm tape
• IR reflow and TTW soldering
• Lead-free device
Part
Color, Luminous Intensity
Red, IV = 63 mcd (typ.)
TLMS1100
TLMO1100
TLMY1100
TLMG1100
TLMP1100
TLMB1100
Orange, IV = 80 mcd (typ.)
Yellow, IV = 80 mcd (typ.)
Green, IV = 35 mcd (typ.)
Pure green, IV = 15 mcd (typ.)
Blue, IV = 5 mcd (typ.)
Document Number 83173
Rev. 1.8, 30-Aug-04
www.vishay.com
1
TLMB / G / O / P / S / Y1100
Vishay Semiconductors
VISHAY
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
TLMS1100 ,TLMO1100 ,TLMY1100 ,TLMG1100, TLMP1100
Parameter
Reverse voltage
Test condition
Symbol
VR
Value
12
Unit
V
DC Forward current
Tamb ≤ 60 °C
IF
IFSM
PV
30
0.5
mA
A
Surge forward current
Power dissipation
tp ≤ 10 µs
Tamb ≤ 75 °C
90
mW
°C
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Tj
120
Tamb
Tstg
Tsd
- 40 to + 100
- 40 to + 100
260
°C
°C
acc. Vishay spec
°C
Thermal resistance junction/
ambient
mounted on PC board
(pad size > 5 mm2)
RthJA
480
K/W
TLMB1100
Parameter
Test condition
Symbol
VR
Value
5
Unit
V
Reverse voltage
DC Forward current
Tamb ≤ 60 °C
tp ≤ 10 µs
IF
IFSM
PV
15
0.1
mA
A
Surge forward current
Power dissipation
Tamb ≤ 60 °C
68
mW
°C
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Tj
100
Tamb
Tstg
Tsd
- 40 to + 100
- 40 to + 100
260
°C
°C
acc. Vishay spec
°C
Thermal resistance junction/
ambient
mounted on PC board
(pad size > 5 mm2)
RthJA
480
K/W
Optical and Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Red
TLMS1100
Parameter
Test condition
IF = 20 mA
Symbol
Min
32
Typ.
63
Max
639
Unit
mcd
Luminous intensity 2)
Dominant wavelength
IV
λd
λp
ϕ
IF = 20 mA
IF = 20 mA
IF = 20 mA
IF = 20 mA
627
633
645
80
nm
nm
deg
V
Peak wavelength
Angle of half intensity
Forward voltage
VF
VR
Cj
2.1
3.0
Reverse voltage
I
R = 10 µA
R = 0, f = 1 MHz
6
V
Junction capacitance
V
15
pF
2) in one Packing Unit IVmax/IVmin ≤ 1.6
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2
Document Number 83173
Rev. 1.8, 30-Aug-04
TLMB / G / O / P / S / Y1100
VISHAY
Vishay Semiconductors
Orange
TLMO1100
Parameter
Test condition
IF = 20 mA
Symbol
IV
Min
50
Typ.
80
Max
609
Unit
mcd
Luminous intensity 2)
Dominant wavelength
IF = 20 mA
IF = 20 mA
IF = 20 mA
IF = 20 mA
λd
λp
ϕ
600
606
610
80
nm
nm
deg
V
Peak wavelength
Angle of half intensity
Forward voltage
VF
VR
Cj
2.1
3
Reverse voltage
IR = 10 µA
6
V
Junction capacitance
V
R = 0, f = 1 MHz
15
pF
2) in one Packing Unit IVmax/IVmin ≤ 1.6
Yellow
TLMY1100
Parameter
Luminous intensity 2)
Dominant wavelength
Test condition
IF = 20 mA
IF = 20 mA
Symbol
IV
Min
50
Typ.
80
Max
595
Unit
mcd
λd
λp
ϕ
580
587
591
80
nm
nm
deg
V
Peak wavelength
Angle of half intensity
Forward voltage
IF = 20 mA
IF = 20 mA
IF = 20 mA
VF
VR
Cj
2.1
3
Reverse voltage
IR = 10 µA
6
V
Junction capacitance
V
R = 0, f = 1 MHz
15
pF
2) in one Packing Unit IVmax/IVmin ≤ 1.6
Green
TLMG1100
Parameter
Luminous intensity 2)
Dominant wavelength
Test condition
IF = 20 mA
IF = 20 mA
Symbol
IV
Min
Typ.
35
Max
575
Unit
mcd
12.5
λd
λp
ϕ
564
570
572
80
nm
nm
deg
V
Peak wavelength
Angle of half intensity
Forward voltage
IF = 20 mA
IF = 20 mA
IF = 20 mA
VF
VR
Cj
2.1
3.0
Reverse voltage
IR = 10 µA
6
V
Junction capacitance
V
R = 0, f = 1 MHz
15
pF
2) in one Packing Unit IVmax/IVmin ≤ 1.6
Document Number 83173
Rev. 1.8, 30-Aug-04
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3
TLMB / G / O / P / S / Y1100
Vishay Semiconductors
VISHAY
Pure green
TLMP1100
Parameter
Test condition
IF = 20 mA
Symbol
IV
Min
6.3
Typ.
15
Max
566
Unit
mcd
Luminous intensity 2)
Dominant wavelength
IF = 20 mA
IF = 20 mA
IF = 20 mA
IF = 20 mA
λd
λp
ϕ
551
558
555
80
nm
nm
deg
V
Peak wavelength
Angle of half intensity
Forward voltage
VF
VR
Cj
2.1
3
Reverse voltage
I
R = 10 µA
R = 0, f = 1 MHz
6
V
Junction capacitance
V
15
pF
2) in one Packing Unit IVmax/IVmin ≤ 1.6
Blue
TLMB1100
Parameter
Test condition
IF = 10 mA
IF = 10 mA
Symbol
IV
Min
2.8
Typ.
5
Max
4.5
Unit
mcd
Luminous intensity 1)
Dominant wavelength
λd
λp
ϕ
466
428
80
nm
nm
deg
V
Peak wavelength
Angle of half intensity
Forward voltage
IF = 10 mA
IF = 10 mA
IF = 20 mA
VF
VR
3.9
Reverse voltage
I
R = 10 µA
5.0
V
1) in one Packing Unit IVmax/IVmin ≤ 1.6
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Document Number 83173
Rev. 1.8, 30-Aug-04
TLMB / G / O / P / S / Y1100
VISHAY
Vishay Semiconductors
Color Classification
Group
Dominant Wavelength (nm)
Blue
Pure Green
Green
Yellow
Orange
min
max
min
max
554
557
560
563
566
min
564
566
569
572
max
565
569
572
575
min
max
min
max
- 1
- 2
- 3
- 4
- 5
- 6
551
554
557
560
563
460
464
468
472
464
468
472
476
580
583
586
589
592
583
586
589
592
595
600
603
606
609
603
606
609
612
Wavelengths are tested at a current pulse duration of 25 ms and an accuracy of 1 nm
Luminous Intensity Classification
Group
Luminous Intensity (mcd)
min
4
max
6.3
8
Pa
Pb
Qa
Qb
Ra
Rb
Sa
Sb
Ta
5
6.3
8
10
12.5
16
10
12.5
16
20
25
32
40
50
63
80
100
125
20
25
32
40
Tb
Ua
Ub
Va
Vb
Wa
Wb
50
63
80
100
125
160
200
Group Name on Label
Luminous Intensity Group
Halfgroup
b
Wavelength
4
Forward Voltage
1
Q
One packing unit/tape contains only one classification group of luminous intensity, color and forward voltage
Only one single classification groups is not available
The given groups are not order codes, customer specific group combinations require marketing agreement
No color subgrouping for Super Red
Document Number 83173
Rev. 1.8, 30-Aug-04
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TLMB / G / O / P / S / Y1100
Vishay Semiconductors
VISHAY
Typical Characteristics (T
= 25 °C unless otherwise specified)
amb
100
90
80
70
60
50
40
30
20
10
0
2.0
1.6
1.2
0.8
0.4
0.0
I
F
= 20 mA
Orange
0
20
40
60
80
100 120
–20
0
20
40
60
80
100
19107
19088
T
amb
– Ambient Temperature ( °C )
T
amb
– Ambient Temperature ( qC )
Figure 1. Power Dissipation vs. Ambient Temperature
Figure 4. Relative Luminous Intensity vs. Amb. Temperature
2.40
40
35
30
25
20
15
10
5
I
F
= 20 mA
Orange
2.35
2.30
2.25
2.20
2.15
2.10
2.05
2.00
1.95
1.90
1.85
1.80
0
0
20
40
60
80
100 120
–20
0
20
40
60
80
100
19108
19093
T
amb
– Ambient Temperature ( °C )
T
amb
– Ambient Temperature ( qC )
Figure 2. Power Dissipation vs. Ambient Temperature
Figure 5. Forward Voltage vs. Ambient Temperature
8
100.00
I
F
= 20 mA
Orange
Orange
6
4
2
10.00
1.00
0
–2
–4
–6
–20
0
20
40
60
80
100
1.0
1.5
2.0
2.5
3.0
T
amb
– Ambient Temperature ( °C )
V
F
– Forward Voltage ( V )
19081
19099
Figure 3. Change of Dominant Wavelength vs. Ambient
Temperature
Figure 6. Forward Current vs. Forward Voltage
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Document Number 83173
Rev. 1.8, 30-Aug-04
6
TLMB / G / O / P / S / Y1100
VISHAY
Vishay Semiconductors
4
10.00
I
F
= 10 mA
Blue
Orange
3
2
1.00
0.10
0.01
1
0
–1
–2
–20
0
T
20
40
60
80
100
1.00
10.00
100.00
– Ambient Temperature ( °C )
amb
I
F
– Forward Current ( mA )
19109
19082
Figure 7. Relative Luminous Intensity vs. Forward Current
Figure 10. Change of Dominant Wavelength vs. Ambient
Temperature
100
Blue
90
2.0
I
F
= 10 mA
Blue
80
70
60
50
40
30
20
10
0
1.6
1.2
0.8
0.4
0.0
0
20
40
60
80
100 120
–20
0
20
40
60
80
100
19105
19090
T
amb
– Ambient Temperature ( °C )
T
amb
– Ambient Temperature ( qC )
Figure 8. Power Dissipation vs. Ambient Temperature
Figure 11. Relative Luminous Intensity vs. Amb. Temperature
20
4.20
Blue
Blue
I
F
= 10 mA
4.15
4.10
4.05
4.00
3.95
3.90
3.85
3.80
3.75
3.70
3.65
3.60
15
10
5
0
0
20
40
60
80
100 120
–20
0
20
40
60
80
100
19106
19094
T
amb
– Ambient Temperature ( °C )
T
amb
– Ambient Temperature ( qC )
Figure 9. Power Dissipation vs. Ambient Temperature
Figure 12. Forward Voltage vs. Ambient Temperature
Document Number 83173
Rev. 1.8, 30-Aug-04
www.vishay.com
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TLMB / G / O / P / S / Y1100
Vishay Semiconductors
VISHAY
2.4
2.0
1.6
1.2
0.8
0.4
0.0
100.00
I
= 20 mA
Pure Green
F
Blue
10.00
1.00
–20
0
20
40
60
80
100
2
3
4
5
6
19087
T
amb
– Ambient Temperature ( °C )
V
– Forward Voltage ( V )
19100
F
Figure 13. Forward Current vs. Forward Voltage
Figure 16. Relative Luminous Intensity vs. Amb. Temperature
2.40
10.00
I
F
= 20 mA
Pure Green
2.35
2.30
2.25
2.20
2.15
2.10
2.05
2.00
1.95
1.90
1.85
1.80
Blue
1.00
0.10
0.01
–20
0
20
40
60
80
100
1.00
10.00
100.00
19095
T
amb
– Ambient Temperature ( °C )
I
F
– Forward Current ( mA )
19110
Figure 14. Relative Luminous Intensity vs. Forward Current
Figure 17. Forward Voltage vs. Ambient Temperature
10
100.00
I
F
= 20 mA
Pure Green
Pure Green
8
6
4
2
10.00
1.00
0
–2
–4
–6
–20
0
T
20
40
60
80
100
1.0
1.5
2.0
2.5
3.0
– Ambient Temperature ( °C )
amb
V
F
– Forward Voltage ( V )
19083
19101
Figure 15. Change of Dominant Wavelength vs. Ambient
Temperature
Figure 18. Forward Current vs. Forward Voltage
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Document Number 83173
Rev. 1.8, 30-Aug-04
8
TLMB / G / O / P / S / Y1100
VISHAY
Vishay Semiconductors
2.40
10.00
I
F
= 20 mA
Green
2.35
2.30
2.25
2.20
2.15
2.10
2.05
2.00
1.95
1.90
1.85
1.80
Pure Green
1.00
0.10
0.01
–20
0
20
40
60
80
100
1.00
10.00
100.00
19096
T
– Ambient Temperature ( °C )
amb
I
F
– Forward Current ( mA )
19111
Figure 19. Relative Luminous Intensity vs. Forward Current
Figure 22. Forward Voltage vs. Ambient Temperature
10
100.00
I
F
= 20 mA
Green
Green
8
6
4
2
10.00
1.00
0
–2
–4
–6
–20
0
T
20
40
60
80
100
1.0
1.5
2.0
2.5
3.0
– Ambient Temperature ( °C )
amb
V
F
– Forward Voltage ( V )
19084
19102
Figure 20. Change of Dominant Wavelength vs. Ambient
Temperature
Figure 23. Forward Current vs. Forward Voltage
2.4
10.00
Green
I
F
= 20 mA
Green
2.0
1.6
1.2
0.8
0.4
0.0
1.00
0.10
0.01
–20
0
20
40
60
80
100
1.00
10.00
100.00
19089
T
amb
– Ambient Temperature ( °C )
I
F
– Forward Current ( mA )
19112
Figure 21. Relative Luminous Intensity vs. Amb. Temperature
Figure 24. Relative Luminous Intensity vs. Forward Current
Document Number 83173
Rev. 1.8, 30-Aug-04
www.vishay.com
9
TLMB / G / O / P / S / Y1100
Vishay Semiconductors
VISHAY
8
100.00
10.00
1.00
I
F
= 20 mA
Yellow
Yellow
6
4
2
0
–2
–4
–6
–20
0
20
40
60
80
100
1.0
1.5
2.0
2.5
3.0
T
amb
– Ambient Temperature ( °C )
V
F
– Forward Voltage ( V )
19085
19104
Figure 25. Change of Dominant Wavelength vs. Ambient
Temperature
Figure 28. Forward Current vs. Forward Voltage
2.0
10.00
I
F
= 20 mA
Yellow
Yellow
1.6
1.2
0.8
0.4
0.0
1.00
0.10
0.01
–20
0
20
40
60
80
100
1.00
10.00
100.00
19092
T
amb
– Ambient Temperature ( °C )
I
F
– Forward Current ( mA )
19114
Figure 26. Relative Luminous Intensity vs. Amb. Temperature
Figure 29. Relative Luminous Intensity vs. Forward Current
2.40
4
Yellow
I
F
= 20 mA
2.35
2.30
2.25
2.20
2.15
2.10
2.05
2.00
1.95
1.90
1.85
1.80
I
F
= 20 mA
Red
3
2
1
0
–1
–2
–3
–4
–20
0
20
40
60
80
100
–20
0
T
20
40
60
80
100
19097
T
amb
– Ambient Temperature ( °C )
– Ambient Temperature ( °C )
amb
19086
Figure 27. Forward Voltage vs. Ambient Temperature
Figure 30. Change of Dominant Wavelength vs. Ambient
Temperature
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Document Number 83173
Rev. 1.8, 30-Aug-04
TLMB / G / O / P / S / Y1100
VISHAY
Vishay Semiconductors
2.0
10.00
Red
I
F
= 20 mA
Red
1.6
1.2
0.8
0.4
0.0
1.00
0.10
0.01
–20
0
20
40
60
80
100
1.00
10.00
100.00
19091
T
amb
– Ambient Temperature ( °C )
I
F
– Forward Current ( mA )
19113
Figure 31. Relative Luminous Intensity vs. Amb. Temperature
Figure 34. Relative Luminous Intensity vs. Forward Current
2.20
Red
I
F
= 20 mA
2.15
2.10
2.05
2.00
1.95
1.90
1.85
1.80
1.75
1.70
1.65
1.60
–20
0
20
40
60
80
100
19098
T
amb
– Ambient Temperature ( °C )
Figure 32. Forward Voltage vs. Ambient Temperature
100.00
Red
10.00
1.00
1.0
1.5
2.0
2.5
3.0
V
F
– Forward Voltage ( V )
19103
Figure 33. Forward Current vs. Forward Voltage
Document Number 83173
Rev. 1.8, 30-Aug-04
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11
TLMB / G / O / P / S / Y1100
Vishay Semiconductors
VISHAY
Reel Dimensions
19043
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12
Document Number 83173
Rev. 1.8, 30-Aug-04
TLMB / G / O / P / S / Y1100
VISHAY
Vishay Semiconductors
Tape Dimensions
19044
Document Number 83173
Rev. 1.8, 30-Aug-04
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13
TLMB / G / O / P / S / Y1100
Vishay Semiconductors
VISHAY
Package Dimensions in mm
18561
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14
Document Number 83173
Rev. 1.8, 30-Aug-04
TLMB / G / O / P / S / Y1100
VISHAY
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 83173
Rev. 1.8, 30-Aug-04
www.vishay.com
15
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