TLMS3200 [VISHAY]
Power SMD LED PLCC-4; 功率SMD LED PLCC- 4
| 型号： | TLMS3200 |
| 厂家： | 
VISHAY |
| 描述： | Power SMD LED PLCC-4 |
| 文件： | 总14页 (文件大小：259K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TLMK/O/S/Y320.
Vishay Semiconductors
Power SMD LED PLCC-4
FEATURES
• Utilizing AlInGaP technology
• Available in 8 mm tape
• Luminous intensity, color and forward
voltage categorized per packing unit
e3
• Luminous intensity ratio per packing unit
I
/I
≤ 1.6
Vmax Vmin
19210
• ESD class 2
• Suitable for all soldering methods
according to CECC
DESCRIPTION
The TLM.32.. series is an advanced development in
terms of heat dissipation.
• Lead (Pb)-free device
APPLICATIONS
The leadframe profile of this PLCC-3 SMD package is
optimized to reduce the thermal resistance.
This allows higher drive current and doubles the light
output compared to Vishay’s high intensity SMD LED
in PLCC-2 package.
• Traffic Signals and Signs
• Interior and exterior lighting
• Dashboard illumination
• Indicator and backlighting purposes for audio,
video, LCDs switches, symbols, illuminated
advertising etc.
PRODUCT GROUP AND PACKAGE DATA
• Product group: LED
• Package: SMD PLCC-4
• Product series: power
• Angle of half intensity: 60°
PARTS TABLE
PART
COLOR, LUMINOUS INTENSITY
Red, IV > 200 mcd (typ. 500 mcd)
DOMINANT WAVELENGTH
TLMK3200
TLMK3201
TLMK3202
TLMK3203
TLMS3200
TLMS3201
TLMS3202
TLMO3200
TLMO3201
TLMO3202
TLMO3203
TLMY3200
TLMY3201
TLMY3202
TLMY3203
611 nm to 622 nm
611 nm to 622 nm
611 nm to 622 nm
611 nm to 622 nm
626 nm to 638 nm
626 nm to 638 nm
626 nm to 638 nm
600 nm to 611 nm
600 nm to 611 nm
600 nm to 611 nm
600 nm to 611 nm
583 nm to 594 nm
583 nm to 594 nm
583 nm to 594 nm
583 nm to 594 nm
Red, IV = (250 to 800) mcd
Red, IV = (320 to 800) mcd
Red, IV = (400 to 1250) mcd
Red, IV > 160 mcd (typ. 300 mcd)
Red, IV = (160 to 400) mcd
Red, IV = (250 to 800) mcd
Soft orange, IV > 200 mcd (typ. 500 mcd)
Soft orange, IV = (250 to 800) mcd
Soft orange, IV = (320 to 800) mcd
Soft orange, IV = (400 to 1250) mcd
Yellow, IV > 200 mcd (typ. 450 mcd)
Yellow, IV = (250 to 800) mcd
Yellow, IV = (320 to 800) mcd
Yellow, IV = (400 to 1250) mcd
Document Number 83146
Rev. 1.5, 24-Sep-07
www.vishay.com
1
TLMK/O/S/Y320.
Vishay Semiconductors
1)
ABSOLUTE MAXIMUM RATINGS
TLMK32.., TLMS32.., TLMO32.., TLMY32..
PARAMETER
Reverse voltage
Forward current
TEST CONDITION
SYMBOL
VALUE
UNIT
V
VR
5
IF
70
mA
Tamb ≤ 65 °C (290 K/W),
Tamb ≤ 70 °C (270 K/W)
Ptot
Power dissipation
180
mW
Tj
Junction temperature
125
°C
°C
°C
Tamb
Tstg
Operating temperature range
Storage temperature range
- 40 to + 100
- 40 to + 100
mounted on PC board FR4
optional paddesign (see page 11)
RthJA
RthJA
290
270
K/W
K/W
Thermal resistance junction/
ambient
mounted on PC board FR4
recommended paddesign (see page 10)
Note:
1)
T
= 25 °C, unless otherwise specified
amb
1)
OPTICAL AND ELECTRICAL CHARACTERISTICS TLMK32.., RED
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN
200
250
320
400
TYP.
MAX
UNIT
IV
TLMK3200
TLMK3201
TLMK3202
TLMK3203
500
mcd
mcd
mcd
mcd
IV
IV
IV
800
800
IF = 50 mA
Luminous intensity
1250
Luminous flux/Luminous
intensity
φV/IV
3
mlm/mcd
IF = 50 mA
IF = 50 mA
λd
λp
Dominant wavelength
Peak wavelength
611
617
624
622
nm
nm
Spectral bandwidth
at 50 % Irel max
IF = 50 mA
Δλ
18
nm
IF = 50 mA
IF = 50 mA
VR = 5 V
Angle of half intensity
Forward voltage
ϕ
60
2.1
deg
V
VF
VR
1.85
2.55
10
Reverse current
0.01
µA
Note:
1)
T
= 25 °C, unless otherwise specified
amb
1)
OPTICAL AND ELECTRICAL CHARACTERISTICS TLMS32.., RED
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN
160
160
250
TYP.
MAX
UNIT
mcd
mcd
mcd
IV
TLMS3200
TLMS3201
TLMS3202
300
IF = 50 mA
IV
IV
Luminous intensity
400
800
Luminous flux/Luminous
intensity
φV/IV
3
mlm/mcd
IF = 50 mA
IF = 50 mA
λd
λp
Dominant wavelength
Peak wavelength
626
630
641
638
nm
nm
Spectral bandwidth
at 50 % Irel max
IF = 50 mA
Δλ
17
nm
IF = 50 mA
IF = 50 mA
VR = 5 V
Angle of half intensity
Forward voltage
ϕ
60
2.1
deg
V
VF
VR
1.85
2.55
10
Reverse current
0.01
µA
Note:
1)
T
= 25 °C, unless otherwise specified
amb
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2
Document Number 83146
Rev. 1.5, 24-Sep-07
TLMK/O/S/Y320.
Vishay Semiconductors
1)
OPTICAL AND ELECTRICAL CHARACTERISTICS TLMO32.., SOFT ORANGE
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN
200
250
320
400
TYP.
MAX
UNIT
mcd
mcd
mcd
mcd
IV
TLMO3200
TLMO3201
TLMO3202
TLMO3203
500
IV
IV
IV
800
800
IF = 50 mA
Luminous intensity
1250
Luminous flux/Luminous
intensity
φV/IV
3
mlm/mcd
IF = 50 mA
IF = 50 mA
λd
λp
Dominant wavelength
Peak wavelength
600
605
611
611
nm
nm
Spectral bandwidth
at 50 % Irel max
IF = 50 mA
Δλ
17
nm
IF = 50 mA
IF = 50 mA
VR = 5 V
Angle of half intensity
Forward voltage
ϕ
60
2.1
deg
V
VF
VR
1.85
2.55
10
Reverse current
0.01
µA
Note:
1)
T
= 25 °C, unless otherwise specified
amb
1)
OPTICAL AND ELECTRICAL CHARACTERISTICS TLMY32.., YELLOW
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN
200
250
320
400
TYP.
MAX
UNIT
mcd
mcd
mcd
mcd
IV
TLMY3200
TLMY3201
TLMY3202
TLMY3203
450
IV
IV
IV
800
800
IF = 50 mA
Luminous intensity
1250
Luminous flux/Luminous
intensity
φV/IV
3
mlm/mcd
IF = 50 mA
IF = 50 mA
λd
λp
Dominant wavelength
Peak wavelength
583
588
590
594
nm
nm
Spectral bandwidth
at 50 % Irel max
IF = 50 mA
Δλ
18
nm
IF = 50 mA
IF = 50 mA
VR = 5 V
Angle of half intensity
Forward voltage
ϕ
60
2.1
deg
V
VF
VR
1.85
2.55
10
Reverse current
0.01
µA
Note:
1)
T
= 25 °C, unless otherwise specified
amb
FORWARD VOLTAGE CLASSIFICATION
FORWARD VOLTAGE (V)
GROUP
MIN
1.85
2.15
MAX
1
2
2.25
2.55
Document Number 83146
Rev. 1.5, 24-Sep-07
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3
TLMK/O/S/Y320.
Vishay Semiconductors
COLOR CLASSIFICATION
DOMINANT WAVELENGTH (NM)
SOFT ORANGE
GROUP
RED
YELLOW
MIN
611
614
MIN
618
622
MAX
598
600
602
604
606
608
MIN
601
603
605
607
609
611
MAX
581
583
585
587
589
591
MAX
584
586
588
590
592
594
1
2
3
4
5
6
LUMINOUS INTENSITY CLASSIFICATION
LUMINOUS INTENSITY (MCD)
GROUP
MIN
MAX
250
Xa
Xb
Ya
Yb
Za
Zb
0a
0b
160
200
250
320
400
500
630
800
320
400
500
630
800
1000
1250
GROUP NAME ON LABEL
LUMINOUS INTENSITY GROUP
HALFGROUP
WAVELENGTH
FORWARD VOLTAGE
Z
b
2
1
One packing unit/tape contains only one classification group of luminous intensity, color and forward voltage.
Only one single classification groups is not available.
The given groups are not order codes, customer specific group combinations require marketing agreement.
No color subgrouping for Super Red.
TYPICAL CHARACTERISTICS
T
= 25 °C, unless otherwise specified
amb
200
100
90
80
70
60
50
40
30
20
10
0
180
270 K/W
160
R
thJA
= 290 K/W
140
120
100
80
270 K/W
RthJA = 290 K/W
60
40
20
0
0
25
50
75
100
125
0
25
50
75
100
125
Tamb - Ambient Temperature (°C)
18567
18568
T
amb
- Ambient Temperature (°C)
Figure 1. Power Dissipation vs. Ambient Temperature
Figure 2. Forward Current vs. Ambient Temperature
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Document Number 83146
Rev. 1.5, 24-Sep-07
TLMK/O/S/Y320.
Vishay Semiconductors
0°
10°
20°
2.5
2.0
1.5
1.0
0.5
0.0
30°
40°
red
1.0
0.9
50°
60°
0.8
70°
0.7
80°
- 50 - 25
0
25
50
75
100
0.6
0.6 0.4 0.2
0
0.2 0.4
95 10319
17035
Tamb - Ambient Temperature (°C)
Figure 3. Rel. Luminous Intensity vs. Angular Displacement
Figure 6. Relative Luminous Intensity vs. Amb. Temperature
1.2
red
1.0
6
red
4
0.8
0.6
0.4
0.2
0.0
2
0
- 2
- 4
- 6
- 50 - 25
0
25
50
75
100
570
590
610
630
650
670
16007
λ - Wavelength (nm)
Tamb - Ambient Temperature (°C)
17036
Figure 4. Relative Intensity vs. Wavelength
Figure 7. Change of Dominant Wavelength vs.
Ambient Temperature
250
200
10
red
red
50 mA
150
100
50
1
0.1
30 mA
0
10 mA
- 50
- 100
- 150
- 200
0.01
1
10
100
- 50 - 25
0
25
50
75
100
17037
IF - Forward Current (mA)
17034
Tamb - Ambient Temperature (°C)
Figure 5. Change of Forward Voltage vs. Ambient Temperature
Figure 8. Relative Luminous Intensity vs. Forward Current
Document Number 83146
Rev. 1.5, 24-Sep-07
www.vishay.com
5
TLMK/O/S/Y320.
Vishay Semiconductors
1.5
250
200
150
100
50
red
1.0
30 mA
red
0.5
0.0
50 mA
10 mA
0
- 0.5
- 1.0
- 1.5
- 50
- 100
- 150
- 200
10 20 30 40 50 60 70 80 90 100
- 50 - 25
0
25
50
75
100
17038
IF - Forward Current (mA)
Tamb - Ambient Temperature (°C)
17039
Figure 9. Change of Dominant Wavelength vs. Forward Current
Figure 12. Change of Forward Voltage vs. Ambient Temperature
1.2
2.5
red
2.0
1.1
red
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1.5
1.0
0.5
0.0
0.0
600 610 620 630 640 650 660 670 680 690 700
- 50 - 25
0
25
50
75
100
17045
λ - Wavelength (nm)
17040
T
amb
- Ambient Temperature (°C)
Figure 10. Relative Intensity vs. Wavelength
Figure 13. Relative Luminous Intensity vs. Amb. Temperature
3
100
90
red
2
red
80
1
0
70
60
50
40
30
20
10
- 1
- 2
- 3
- 4
- 5
0
- 50 - 25
0
25
50
75
100
1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4
T
amb
- Ambient Temperature (°C)
17047
V - Forward Voltage (V)
F
17041
Figure 11. Forward Current vs. Forward Voltage
Figure 14. Change of Dominant Wavelength vs.
Ambient Temperature
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Document Number 83146
Rev. 1.5, 24-Sep-07
TLMK/O/S/Y320.
Vishay Semiconductors
250
200
150
100
50
10
1
50 mA
30 mA
super red
soft orange
10 mA
0
- 50
- 100
- 150
- 200
0
0.01
1
10
IF - Forward Current (mA)
100
- 50 - 25
0
25
50
75
100
17042
17020
Tamb - Ambient Temperature (°C)
Figure 15. Relative Luminous Intensity vs. Forward Current
Figure 18. Change of Forward Voltage vs. Ambient Temperature
1.5
red
1.0
2.5
soft orange
2.0
0.5
0.0
1.5
1.0
0.5
0.0
- 0.5
- 1.0
- 1.5
10 20 30 40 50 60 70 80 90 100
- 50 - 25
0
25
50
75
100
I
F
- Forward Current (mA)
17043
17021
Tamb - Ambient Temperature (°C)
Figure 16. Change of Dominant Wavelength vs. Forward Current
Figure 19. Relative Luminous Intensity vs. Amb. Temperature
6
1.2
soft orange
4
soft orange
1.0
2
0
0.8
0.6
0.4
0.2
0.0
- 2
- 4
- 6
- 50 - 25
0
25
50
75
100
560
580
600
620
640
660
17022
Tamb - Ambient Temperature (°C)
16314
λ - Wavelength (nm)
Figure 17. Relative Intensity vs. Wavelength
Figure 20. Change of Dominant Wavelength vs.
Ambient Temperature
Document Number 83146
Rev. 1.5, 24-Sep-07
www.vishay.com
7
TLMK/O/S/Y320.
Vishay Semiconductors
250
200
150
100
50
10
30 mA
soft orange
50 mA
yellow
1
0.1
10 mA
0
- 50
- 100
- 150
- 200
0.01
- 50 - 25
0
25
50
75
100
1
10
100
Tamb - Ambient Temperature (°C)
17015
IF - Forward Current (mA)
17023
Figure 21. Relative Luminous Intensity vs. Forward Current
Figure 24. Change of Forward Voltage vs. Ambient Temperature
2.5
1.5
soft orange
1.0
yellow
2.0
0.5
0.0
1.5
1.0
0.5
0.0
- 0.5
- 1.0
- 1.5
10 20 30 40 50 60 70 80 90 100
- 50 - 25
0
25
50
75
100
17024
IF - Forward Current (mA)
Tamb - Ambient Temperature (°C)
17016
Figure 22. Change of Dominant Wavelength vs. Forward Current
Figure 25. Relative Luminous Intensity vs. Amb. Temperature
1.2
6
yellow
yellow
1.0
4
0.8
0.6
0.4
0.2
0.0
2
0
- 2
- 4
- 6
- 50 - 25
0
25
50
75
100
540
560
580
600
620
640
16008
Tamb - Ambient Temperature (°C)
λ - Wavelength (nm)
17017
Figure 23. Relative Intensity vs. Wavelength
Figure 26. Change of Dominant Wavelength vs.
Ambient Temperature
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Document Number 83146
Rev. 1.5, 24-Sep-07
TLMK/O/S/Y320.
Vishay Semiconductors
10
100
90
80
70
60
50
40
30
20
10
0
yellow
yellow
soft orange
red
super red
1
0.1
0.01
1
10
IF - Forward Current (mA)
100
1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5
17018
17046
V - Forward Voltage (V)
F
Figure 27. Relative Luminous Intensity vs. Forward Current
Figure 29. Forward Current vs. Forward Voltage
0.12
0.10
1.5
yellow
1.0
0.08
0.5
0.0
tP/T = 0.005
0.05
0.5
0.06
0.04
0.02
0.00
- 0.5
- 1.0
- 1.5
10-5 10-4 10-3 10-2 10-1 100 101 102
10 20 30 40 50 60 70 80 90 100
17044
tP - Pulse Length (s)
17019
IF - Forward Current (mA)
Figure 28. Change of Dominant Wavelength vs. Forward Current
Figure 30. Forward Current vs. Pulse Length
TAPING in millimeters
3.5
3.1
2.2
2.0
Anode
Cathode
4.0
3.6
5.75
5.25
8.3
7.7
3.6
3.4
Cathode
1.85
1.65
4.1
3.9
4.1
3.9
1.6
1.4
0.25
2.05
1.95
18596
Document Number 83146
Rev. 1.5, 24-Sep-07
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TLMK/O/S/Y320.
Vishay Semiconductors
RECOMMENDED PAD DESIGN in millimeters
(Wave-Soldering), R
= 270 K/W
thJA
16260
RECOMMENDED PAD DESIGN in millimeters
(Reflow-Soldering), R
= 270 K/W
thJA
16261
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Document Number 83146
Rev. 1.5, 24-Sep-07
TLMK/O/S/Y320.
Vishay Semiconductors
OPTIONAL PAD DESIGN in millimeters
(Wave-Soldering), R = 290 K/W
thJA
16262
OPTIONAL PAD DESIGN in millimeters
(Reflow-Soldering), R
= 290 K/W
thJA
16263
Document Number 83146
Rev. 1.5, 24-Sep-07
www.vishay.com
11
TLMK/O/S/Y320.
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters
Mounting Pad Layout
area covered with
solder resist
1.2
4
1.6 (1.9)
Dimensions: IR and Vaporphase
(Wave Soldering)
Drawing-No. : 6.541-5054.01-4
Issue: 2; 02.12.05
16276_1
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12
Document Number 83146
Rev. 1.5, 24-Sep-07
TLMK/O/S/Y320.
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or
unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and
expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such
unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 83146
Rev. 1.5, 24-Sep-07
www.vishay.com
13
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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