TLMW3100 [VISHAY]
High Intensity SMD LED; 高强度SMD LED
| 型号： | TLMW3100 |
| 厂家： | 
VISHAY |
| 描述： | High Intensity SMD LED |
| 文件： | 总6页 (文件大小：164K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TLMW310.
Vishay Semiconductors
VISHAY
High Intensity SMD LED
Description
This device has been designed to meet the increasing
demand for white SMD LED.
The package of the TLMW310. is the PLCC-2 (equiv-
alent to a size B tantalum capacitor).
It consists of a lead frame which is embedded in a
white thermoplast. The reflector inside this package is
filled with a mixture of epoxy and TAG phosphor.
19225
The TAG phosphor converts the blue emission par-
tially to yellow, which mixes with the remaining blue to
give white.
Pb
e3
Pb-free
Features
Applications
• High efficient InGaN technology
Automotive: Backlighting in dashboards and switches
• Chromaticity Coordinate categorized according to
CIE1931 per packing unit
Telecommunication: Indicator and backlighting in
telephone and fax
• Luminous intensity ratio in one packing unit
Backlighting for audio and video equipment
Backlighting in office equipment
IVmax/IVmin 1.6
• Typical color temperature 5500 K
• ESD class 1
Indoor and outdoor message boards
Flat backlight for LCDs, switches and symbols
• EIA and ICE standard package
Illumination purposes, alternative to incandescent
lamps
General use
• Compatible with infrared, vapor phase and wave
solder processes according to CECC
• Available in 8 mm tape reel
• Lead-free device
Parts Table
Part
Color, Luminous Intensity
White, I > 80 mcd
Angle of Half Intensity (
60 °
)
Technology
TLMW3100
TLMW3101
TLMW3102
InGaN / TAG on SiC
V
White, I = (80 to 200) mcd
60 °
60 °
InGaN / TAG on SiC
InGaN / TAG on SiC
V
White, I = (125 to 320) mcd
V
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
TLMW310.
Parameter
Test condition
Symbol
Value
Unit
V
Reverse voltage
V
5
R
DC Forward current
Surge forward current
Power dissipation
T
70 °C
I
20
mA
A
amb
F
t
10
s
I
0.1
85
p
FSM
T
70 °C
P
mW
°C
amb
V
Junction temperature
Operating temperature range
T
100
j
T
- 40 to + 100
°C
amb
Document Number 83143
Rev. 1.7, 31-Aug-04
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1
TLMW310.
Vishay Semiconductors
VISHAY
Parameter
Test condition
Symbol
Value
Unit
°C
Storage temperature range
T
- 40 to + 100
stg
Soldering temperature
t
5 s
T
260
350
°C
sd
Thermal resistance junction/
ambient
mounted on PC board
R
K/W
thJA
2
(pad size > 16 mm )
Optical and Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
White
TLMW310.
Parameter
Test condition
= 20 mA
Part
Symbol
Min
80
Typ.
Max
Unit
mcd
1)
I
TLMW3100
TLMW3101
TLMW3102
TLMW3100
I
I
I
140
Luminous intensity
F
V
V
V
80
200
320
mcd
mcd
125
Chromaticity coordinate x acc.
to CIE 1931
I
I
= 20 mA
= 20 mA
x
0.33
0.33
F
F
Chromaticity coordinate y acc.
to CIE 1931
TLMW3100
y
Angle of half intensity
Forward voltage
I
I
I
I
I
= 20 mA
= 20 mA
60
deg
V
F
F
R
F
F
V
3.5
4.2
F
Reverse voltage
= 10
A
V
5
V
R
Temperature coefficient of V
= 20 mA
= 20 mA
TC
- 4
mV/K
% / K
F
VF
Temperature coefficient of I
TC
- 0.5
V
IV
1)
in one Packing Unit I
/I
1.6
Vmax Vmin
Typical Characteristics (Tamb = 25 C unless otherwise specified)
90
80
70
60
50
40
30
20
10
0
25
20
15
10
5
0
0
10 20 30 40 50 60 70 80 90 100
- Ambient Temperature ( C )
0
10 20 30 40 50 60 70 80 90 100
- Ambient Temperature ( °C )
16191
T
16192
T
amb
amb
Figure 1. Power Dissipation vs. Ambient Temperature
Figure 2. Forward Current vs. Ambient Temperature for AlInGaP
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Document Number 83143
Rev. 1.7, 31-Aug-04
2
TLMW310.
Vishay Semiconductors
VISHAY
30
ı
I
MTTF, confidence level 60%
failure criteria I /I = 50%
5000h
100
90
80
70
60
50
40
30
20
10
0
V
V0
ı
II
10000h
25
20
15
10
5
I
II
0
0
10 20 30 40 50 60 70 80 90 100
- Ambient Temperature ( °C )
400 450 500 550 600 650 700 750 800
16193
T
amb
16196
λ
- Wavelength ( nm )
Figure 3. Forward Current vs. Ambient Temperature for AlInGaP
Figure 6. Relative Intensity vs. Wavelength
10
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1
0.1
0.01
1
10
100
0
10 20 30 40 50 60 70 80 90 100
- Ambient Temperature ( °C )
16194
I
- Forward Current ( mA )
F
T
amb
16197
Figure 4. Relative Luminous Intensity vs. Forward Current
Figure 7. Rel. Luminous Intensity vs. Ambient Temperature
100
0.345
White
0.340
X
0.335
0.330
10
Y
0.325
0.320
0.315
1
2.0
2.5
3.0
V - Forward Voltage ( V )
F
3.5
4.0
4.5
5.0
0
10
20
30
40
50
60
16195
16198
I
- Forward Current ( mA )
F
Figure 5. Forward Current vs. Forward Voltage
Figure 8. Chromaticity Coordinate Shift vs. Forward Current
Document Number 83143
Rev. 1.7, 31-Aug-04
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TLMW310.
Vishay Semiconductors
VISHAY
3.95
3.90
3.85
3.80
3.75
3.70
3.65
3.60
3.55
3.50
3.45
0
10 20 30 40 50 60 70 80 90 100
- Ambient Temperature ( °C )
16199
T
amb
Figure 9. Forward Voltage vs. Ambient Temperature
0°
10°
20°
30°
40°
1.0
0.9
50°
60°
0.8
0.7
70°
80°
0.6
0.6 0.4 0.2
0
0.2
0.4
95 10319
Figure 10. Rel. Luminous Intensity vs. Angular Displacement
0.50
f
e
0.45
D65
b
A
d
5
.
c
0.40
0.35
0.30
0.25
0.20
.
a
a = 20000K
b = 10000K
c = 7000K
d = 6000K
e = 5000K
f = 4000K
3
4
0.20 0.25 0.30 0.35 0.40 0.45 0.50
Coordinates of Colorgroups
16284
Figure 11. Coordinates of Colorgroups
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Document Number 83143
Rev. 1.7, 31-Aug-04
TLMW310.
Vishay Semiconductors
VISHAY
Package Dimensions in mm
3.5 0.2
technical drawings
according to DIN
specifications
Mounting Pad Layout
Pin identification
1.2
area covered with
solder resist
C
A
4
1.6 (1.9)
∅ 2.4
Dimensions: IR and Vaporphase
(Wave Soldering)
+ 0.15
3
Drawing-No. : 6.541-5025.01-4
Issue: 7; 05.04.04
95 11314
Document Number 83143
Rev. 1.7, 31-Aug-04
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TLMW310.
Vishay Semiconductors
VISHAY
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.com
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Document Number 83143
Rev. 1.7, 31-Aug-04
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