TLMY3102-GS08 [VISHAY]
Visible LED, Clear;
VISHAY 
TLMG/H/O/P/Y310.
Vishay Semiconductors
Standard SMD LED PLCC-2
FEATURES
• SMD LEDs with exceptional brightness
• Luminous intensity categorized
• Compatible with automatic placement
equipment
• EIA and ICE standard package
e3
• Compatible with infrared, vapor phase and wave
solder processes according to CECC
• Available in 8 mm tape
• Low profile package
94 8553
• Non-diffused lens: excellent for coupling to light
pipes and backlighting
• Low power consumption
• Luminous intensity ratio in one packaging unit
I
/I
≤ 1.6
Vmax Vmin
• Lead (Pb)-free device
DESCRIPTION
APPLICATIONS
These devices have been designed to meet the
increasing demand for surface mounting technology.
• Automotive: backlighting in dashboards and
switches
The package of the TLM.310. is the PLCC-2
(equivalent to a size B tantalum capacitor).
• Telecommunication: indicator and backlighting in
telephone and fax
It consists of a lead frame which is embedded in a
white thermoplast. The reflector inside this package is
filled up with clear epoxy.
• Indicator and backlight for audio and video
equipment
• Indicator and backlight in office equipment
• Flat backlight for LCDs, switches and symbols
• General use
PRODUCT GROUP AND PACKAGE DATA
• Product group: LED
• Package: SMD PLCC-2
• Product series: standard
• Angle of half intensity: 60°
PARTS TABLE
PART
COLOR, LUMINOUS INTENSITY
Red, IV > 2.5 mcd
TECHNOLOGY
GaAsP on GaP
GaAsP on GaP
GaAsP on GaP
GaAsP on GaP
GaAsP on GaP
GaAsP on GaP
GaAsP on GaP
GaP on GaP
TLMH3100
TLMH3101
TLMH3102
TLMO3100
TLMO3101
TLMY3100
TLMY3102
TLMG3100
TLMG3102
TLMG3105
TLMP3100
TLMP3101
TLMP3107
TLMP3102
Red, IV = (4 to 12.5) mcd
Red, IV = (6.3 to 20) mcd
Soft orange, IV > 2.5 mcd
Soft orange, IV = (4 to 12.5) mcd
Yellow, IV > 2.5 mcd
Yellow, IV = (6.3 to 20) mcd
Green, IV > 4 mcd
Green, IV = (10 to 20) mcd
Green, IV = (6.3 to 20) mcd
Pure green, IV > 1 mcd
GaP on GaP
GaP on GaP
GaP on GaP
Pure green, IV = (1.6 to 5) mcd
Pure green, IV = (2.5 to 5) mcd
Pure green, IV = (2.5 to 8) mcd
GaP on GaP
GaP on GaP
GaP on GaP
Document Number 83032
Rev. 1.8, 12-Sep-07
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1
TLMG/H/O/P/Y310.
Vishay Semiconductors
1)
ABSOLUTE MAXIMUM RATINGS TLMG310. ,TLMH310. TLMO310. ,TLMP310. ,TLMY310
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
VR
Reverse voltage
6
30
V
Tamb ≤ 60 °C
tp ≤ 10 µs
IF
IFSM
PV
DC forward current
mA
A
Surge forward current
Power dissipation
0.5
Tamb ≤ 60 °C
100
mW
°C
Tj
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
100
Tamb
Tstg
Tsd
- 40 to + 100
- 55 to + 100
260
°C
°C
t ≤ 5 s
°C
mounted on PC board
(pad size > 16 mm2)
Thermal resistance junction/
ambient
RthJA
400
K/W
Note:
1)
T
= 25 °C, unless otherwise specified
amb
1)
OPTICAL AND ELECTRICAL CHARACTERISTICS TLMH310., RED
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN
2.5
4
TYP.
MAX
UNIT
IV
TLMH3100
TLMH3101
TLMH3102
6
mcd
mcd
mcd
nm
nm
deg
V
Luminous intensity 2)
IF = 10 mA
IV
IV
12.5
20
6.3
612
IF = 10 mA
IF = 10 mA
IF = 10 mA
λd
λp
Dominant wavelength
Peak wavelength
625
635
60
2
Angle of half intensity
Forward voltage
ϕ
I
F = 20 mA
VF
VR
Cj
2.8
IR = 10 µA
Reverse voltage
6
15
15
V
VR = 0, f = 1 MHz
Junction capacitance
pF
Note:
1)
T
= 25 °C, unless otherwise specified
amb
2) In one packing unit IVmax/IVmin ≤ 1.6
1)
OPTICAL AND ELECTRICAL CHARACTERISTICS TLM0310., SOFT ORANGE
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN
2.5
4
TYP.
MAX
UNIT
mcd
mcd
nm
nm
deg
V
IV
TLMO3100
TLMO3101
8
Luminous intensity 2)
IF = 10 mA
IV
λd
λp
12.5
611
IF = 10 mA
IF = 10 mA
IF = 10 mA
Dominant wavelength
Peak wavelength
598
605
60
2
Angle of half intensity
Forward voltage
ϕ
I
F = 20 mA
VF
VR
Cj
2.8
IR = 10 µA
Reverse voltage
6
15
15
V
VR = 0, f = 1 MHz
Junction capacitance
pF
Note:
1)
T
= 25 °C, unless otherwise specified
amb
2) In one packing unit IVmax/IVmin ≤ 1.6
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2
Document Number 83032
Rev. 1.8, 12-Sep-07
TLMG/H/O/P/Y310.
Vishay Semiconductors
1)
OPTICAL AND ELECTRICAL CHARACTERISTICS TLMY310., YELLOW
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN
TYP.
MAX
UNIT
IF = 10 mA
TLMY3100
IV
2.5
6
mcd
Luminous intensity 2)
TLMY3102
IV
λd
λp
ϕ
6.3
20
mcd
nm
nm
deg
V
IF = 10 mA
581
594
Dominant wavelength
Peak wavelength
I
F = 10 mA
585
60
IF = 10 mA
IF = 20 mA
Angle of half intensity
Forward voltage
VF
VR
Cj
2.1
15
2.8
IR = 10 µA
6
V
Reverse voltage
VR = 0, f = 1 MHz
15
pF
Junction capacitance
Note:
1)
T
= 25 °C, unless otherwise specified
amb
2) In one packing unit IVmax/IVmin ≤ 1.6
1)
OPTICAL AND ELECTRICAL CHARACTERISTICS TLMG310., GREEN
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN
TYP.
MAX
UNIT
mcd
mcd
mcd
nm
nm
deg
V
IV
TLMG3100
TLMG3102
TLMG3105
4
9
Luminous intensity 2)
IF = 10 mA
IV
IV
10
20
20
6.3
562
IF = 10 mA
IF = 10 mA
λd
λp
Dominant wavelength
Peak wavelength
575
565
60
IF = 10 mA
Angle of half intensity
Forward voltage
ϕ
IF = 20 mA
VF
VR
Cj
2.2
15
2.8
IR = 10 µA
Reverse voltage
6
V
VR = 0, f = 1 MHz
Junction capacitance
15
pF
Note:
1)
T
= 25 °C, unless otherwise specified
amb
2) In one packing unit IVmax/IVmin ≤ 1.6
1)
OPTICAL AND ELECTRICAL CHARACTERISTICS TLMP310., PURE GREEN
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN
TYP.
MAX
UNIT
mcd
mcd
mcd
mcd
nm
IV
TLMP3100
TLMP3101
TLMP3102
TLMP3107
1
4
IV
IV
1.6
2.5
2.5
555
5
8
Luminous intensity 2)
IF = 10 mA
IV
5
IF = 10 mA
IF = 10 mA
IF = 10 mA
λd
λp
Dominant wavelength
Peak wavelength
565
555
60
nm
Angle of half intensity
Forward voltage
ϕ
deg
V
I
F = 20 mA
VF
VR
Cj
2.1
15
2.8
IR = 10 µA
Reverse voltage
6
V
VR = 0, f = 1 MHz
Junction capacitance
15
pF
Note:
1)
T
= 25 °C, unless otherwise specified
amb
2) In one packing unit IVmax/IVmin ≤ 1.6
Document Number 83032
Rev. 1.8, 12-Sep-07
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TLMG/H/O/P/Y310.
Vishay Semiconductors
TYPICAL CHARACTERISTICS
T
= 25 °C, unless otherwise specified
amb
0°
10°
20°
125
100
75
30°
40°
1.0
0.9
50°
60°
50
25
0.8
70°
0.7
80°
0
0.6
0.6 0.4 0.2
0
0.2 0.4
0
20
amb
40
60
80
100
95 10319
T
- Ambient Temperature (°C)
95 10904
Figure 1. Power Dissipation vs. Ambient Temperature
Figure 4. Rel. Luminous Intensity vs. Angular Displacement
60
50
100
red
40
30
20
10
0
10
1
0.1
0
20
40
60
80
100
0
1
2
3
4
5
95 10905
Tamb - Ambient Temperature (°C)
V
- Forward Voltage (V)
95 9989
F
Figure 2. Forward Current vs. Ambient Temperature for InGaN
Figure 5. Forward Current vs. Forward Voltage
10000
2.0
Tamb < 60 °C
t p /T = 0.005
red
1.6
0.01
1000
0.02
0.05
1.2
100
0.2
0.5
DC
0.8
0.4
0
0.1
10
1
100
0.01
0.1
1
10
0
20
40
60
80
100
T
amb
- Ambient Temperature (°C)
tp - Pulse Length (ms)
95 9985
95 9993
Figure 3. Pulse Forward Current vs. Pulse Duration
Figure 6. Rel. Luminous Intensity vs. Ambient Temperature
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Document Number 83032
Rev. 1.8, 12-Sep-07
TLMG/H/O/P/Y310.
Vishay Semiconductors
100
10
1
2.4
2.0
soft orange
red
1.6
1.2
0.8
0.4
0
0.1
0
1
2
3
4
5
IF (mA)
tP/T
10
20
0.5
50
100 200
0.1 0.05
500
V
- Forward Voltage (V)
95 9990
1
0.2
0.02
95 10321
F
Figure 7. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle
Figure 10. Forward Current vs. Forward Voltage
2.0
10
soft orange
1.6
red
1
0.1
1.2
0.8
0.4
0
0.01
0
20
40
60
80
100
1
10
100
95 9994
Tamb - Ambient Temperature (°C)
I
- Forward Current (mA)
95 9995
F
Figure 8. Relative Luminous Intensity vs. Forward Current
Figure 11. Rel. Luminous Intensity vs. Ambient Temperature
2.4
1.2
red
1.0
soft orange
2.0
1.6
1.2
0.8
0.8
0.6
0.4
0.4
0
0.2
0
I
(mA)
10
20
50
100 200
0.1 0.05
500
F
690
590
610
630
650
670
95 10259
t /T
p
1
0.5
0.2
0.02
λ - Wavelength (nm)
95 10040
Figure 9. Relative Intensity vs. Wavelength
Figure 12. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle
Document Number 83032
Rev. 1.8, 12-Sep-07
www.vishay.com
5
TLMG/H/O/P/Y310.
Vishay Semiconductors
10
2.0
soft orange
yellow
1.6
1.2
0.8
0.4
1
0.1
0
0.01
1
10
100
0
20
40
60
80
100
I
- Forward Current (mA)
95 9997
T
- Ambient Temperature (°C)
95 9992
F
amb
Figure 13. Relative Luminous Intensity vs. Forward Current
Figure 16. Rel. Luminous Intensity vs. Ambient Temperature
1.2
2.4
soft orange
1.0
yellow
2.0
0.8
0.6
0.4
1.6
1.2
0.8
0.2
0
0.4
0
670
570
590
610
630
650
I
(mA)
10
1
20
50
100 200
0.1 0.05
500
F
t /T
p
λ - Wavelength (nm)
0.5
0.2
0.02
95 10324
95 10260
Figure 14. Relative Intensity vs. Wavelength
Figure 17. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle
100
10
yellow
yellow
10
1
1
0.1
0.1
0.01
0
1
2
3
4
5
1
10
100
V
- Forward Voltage (V)
95 9987
F
I
- Forward Current (mA)
95 9999
F
Figure 15. Forward Current vs. Forward Voltage
Figure 18. Relative Luminous Intensity vs. Forward Current
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Document Number 83032
Rev. 1.8, 12-Sep-07
TLMG/H/O/P/Y310.
Vishay Semiconductors
2.4
2.0
1.2
1.0
yellow
green
1.6
1.2
0.8
0.4
0.8
0.6
0.4
0.2
0
0
I
F (mA)
10
1
20
0.5
50
100
200
500
650
550
570
590
610
630
tp/T
0.2 0.1
0.05
0.02
λ - Wavelength (nm)
95 10039
95 10263
Figure 19. Relative Intensity vs. Wavelength
Figure 22. Specific Luminous Intensity vs. Forward Current
10
100
green
green
1
10
1
0.1
0.01
0.1
1
10
100
0
1
2
3
4
5
I
- Forward Current (mA)
95 9996
F
V
- Forward Voltage (V)
95 9986
F
Figure 20. Forward Current vs. Forward Voltage
Figure 23. Relative Luminous Intensity vs. Forward Current
2.0
1.2
green
green
1.0
1.6
1.2
0.8
0.8
0.6
0.4
0.4
0
0.2
0
0
20
40
60
80
100
620
520
540
560
580
600
T
- Ambient Temperature (°C)
95 10320
amb
λ - Wavelength (nm)
95 10038
Figure 21. Rel. Luminous Intensity vs. Ambient Temperature
Figure 24. Relative Intensity vs. Wavelength
Document Number 83032
Rev. 1.8, 12-Sep-07
www.vishay.com
7
TLMG/H/O/P/Y310.
Vishay Semiconductors
100
10
1
pure green
pure green
10
1
0.1
0.1
0.01
4
5
0
1
2
3
1
10
- Forward Current (mA)
100
95 9998
I
F
95 9988
V
- Forward Voltage (V)
F
Figure 25. Forward Current vs. Forward Voltage
Figure 28. Relative Luminous Intensity vs. Forward Current
1.2
2.0
pure green
pure green
1.0
1.6
1.2
0.8
0.6
0.4
0.2
0.8
0.4
0
0
600
0
20
40
60
80
100
500
520
540
560
580
95 10325
λ - Wavelength (nm)
95 9991
T
amb
- Ambient Temperature (°C)
Figure 26. Rel. Luminous Intensity vs. Ambient Temperature
Figure 29. Relative Intensity vs. Wavelength
2.4
pure green
2.0
1.6
1.2
0.8
0.4
0
10
100
1000
I
- Forward Current (mA)
95 10261
F
Figure 27. Specific Luminous Intensity vs. Forward Current
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Document Number 83032
Rev. 1.8, 12-Sep-07
TLMG/H/O/P/Y310.
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters
3.5 0.2
technical drawings
according to DIN
specifications
Mounting Pad Layout
Pin identification
1.2
area covered with
solder resist
C
A
4
1.6 (1.9)
?
2.4
+ 0.15
3
Drawing-No.: 6.541-5025.01-4
Issue: 8; 22.11.05
95 11314-1
Document Number 83032
Rev. 1.8, 12-Sep-07
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9
TLMG/H/O/P/Y310.
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or
unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and
expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such
unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
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Document Number 83032
Rev. 1.8, 12-Sep-07
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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