TLVS4200-MS21 [VISHAY]
Visible LED;TLVG/H/P/S/Y420.
Vishay Semiconductors
Backlighting LED in ∅ 3 mm Tinted Non-Diffused Package
FEATURES
• High light output
• Wide viewing angle
• Categorized for luminous flux
e1
• Tinted clear package
• Low power dissipation
19231
• Low self heating
• Rugged design
DESCRIPTION
• High reliability
The TLV.4200 series was developed for backlighting.
Due to its special shape the spatial distribution of the
radiation is qualified for backlighting.
• Lead (Pb)-free device
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
To optimize the brightness of backlighting a custom-
built reflector (with scattering) is required. Uniform
illumination can be enhanced by covering the front of
the reflector with diffusor material.
This is a flexible solution for backlighting different
areas.
APPLICATIONS
• Backlighting of display panels, LCD displays,
symbols on switches, keyboards, graphic boards
and measuring scales
• Illumination of large areas e.g. dot matrix displays
PRODUCT GROUP AND PACKAGE DATA
• Product group: LED
• Package: 3 mm backlighting
• Product series: standard
• Angle of half intensity: 85°
PARTS TABLE
PART
COLOR, LUMINOUS FLUX
Red, φV > 10 mlm
TECHNOLOGY
GaAsP on GaP
GaAsP on GaP
GaAsP on GaP
GaAsP on GaP
GaP on GaP
TLVH4200
TLVH4201
TLVS4200
TLVY4200
TLVG4200
TLVP4200
Red, φV = (40 to 125) mlm
Soft orange, φV > 10 mlm
Yellow, φV > 10 mlm
Green, φV > 10 mlm
Pure green, φV > 4 mlm
GaP on GaP
Document Number 83057
Rev. 1.7 25-Mar-08
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1
TLVG/H/P/S/Y420.
Vishay Semiconductors
1)
ABSOLUTE MAXIMUM RATINGS TLVH4200, TLVS4200, TLVY4200, TLVG4200, TLVP4200
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
Reverse voltage 2)
VR
6
V
Tamb ≤ 60 °C
tp ≤ 10 µs
IF
IFSM
PV
DC Forward current
Surge forward current
Power dissipation
30
mA
A
1
90
mW
°C
Tj
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
100
Tamb
Tstg
Tsd
- 40 to + 100
- 55 to + 100
260
°C
°C
t ≤ 5 s, 2 mm from body
°C
Thermal resistance junction/
ambient
RthJA
400
K/W
Note:
1)
T
= 25 °C, unless otherwise specified
amb
2) Driving the LED in reverse direction is suitable for a short term application
1)
OPTICAL AND ELECTRICAL CHARACTERISTICS
TLVH4200, RED
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
mlm
mlm
nm
nm
deg
V
φV
TLVH4200
TLVH4201
10
40
25
IF = 15 mA
Luminous flux
φV
λd
λp
125
625
IF = 10 mA
IF = 10 mA
IF = 10 mA
IF = 20 mA
Dominant wavelength
Peak wavelength
612
635
85
Angle of half intensity
Forward voltage
ϕ
VF
VR
Cj
2.4
15
3
I
R = 10 µA
Reverse voltage
6
V
VR = 0, f = 1 MHz
Junction capacitance
50
pF
Note:
1)
T
= 25 °C, unless otherwise specified
amb
1)
OPTICAL AND ELECTRICAL CHARACTERISTICS
TLVS4200, SOFT ORANGE
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
IF = 15 mA
φV
Luminous flux
10
25
mlm
nm
nm
deg
V
IF = 10 mA
IF = 10 mA
λd
λp
Dominant wavelength
Peak wavelength
Angle of half intensity
Forward voltage
598
611
605
85
IF = 10 mA
ϕ
IF = 20 mA
VF
VR
Cj
2.4
15
3
IR = 10 µA
Reverse voltage
Junction capacitance
6
V
VR = 0, f = 1 MHz
50
pF
Note:
1)
T
= 25 °C, unless otherwise specified
amb
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2
Document Number 83057
Rev. 1.7 25-Mar-08
TLVG/H/P/S/Y420.
Vishay Semiconductors
1)
OPTICAL AND ELECTRICAL CHARACTERISTICS
TLVY4200, YELLOW
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
mlm
nm
nm
deg
V
IF = 15 mA
φV
Luminous flux
10
20
IF = 10 mA
IF = 10 mA
λd
λp
Dominant wavelength
Peak wavelength
Angle of half intensity
Forward voltage
581
594
585
85
IF = 10 mA
ϕ
IF = 20 mA
VF
VR
Cj
2.4
15
3
IR = 10 µA
Reverse voltage
Junction capacitance
6
V
VR = 0, f = 1 MHz
50
pF
Note:
1)
T
= 25 °C, unless otherwise specified
amb
1)
OPTICAL AND ELECTRICAL CHARACTERISTICS
TLVG4200, GREEN
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
mlm
nm
nm
deg
V
IF = 15 mA
φV
Luminous flux
10
30
IF = 10 mA
IF = 10 mA
IF = 10 mA
IF = 20 mA
IR = 10 µA
λd
λp
Dominant wavelength
Peak wavelength
Angle of half intensity
Forward voltage
562
575
565
85
ϕ
VF
VR
Cj
2.4
15
3
Reverse voltage
Junction capacitance
6
V
V
R = 0, f = 1 MHz
50
pF
Note:
1)
T
= 25 °C, unless otherwise specified
amb
1)
OPTICAL AND ELECTRICAL CHARACTERISTICS
TLVP4200, PURE GREEN
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
mlm
nm
nm
deg
V
IF = 15 mA
φV
Luminous flux
4
10
IF = 10 mA
IF = 10 mA
IF = 10 mA
IF = 20 mA
λd
λp
Dominant wavelength
Peak wavelength
Angle of half intensity
Forward voltage
555
565
555
85
ϕ
VF
VR
Cj
2.4
15
3
I
R = 10 µA
Reverse voltage
Junction capacitance
6
V
VR = 0, f = 1 MHz
50
pF
Note:
1)
T
= 25 °C, unless otherwise specified
amb
Document Number 83057
Rev. 1.7 25-Mar-08
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3
TLVG/H/P/S/Y420.
Vishay Semiconductors
LUMINOUS FLUX CLASSIFICATION
GROUP
LUMINOUS FLUX (MLM)
STANDARD
MIN.
4.0
6.3
10
MAX.
8.0
P
Q
R
S
T
12.5
20
16
32
25
50
U
V
W
X
Y
Z
40
80
63
125
200
260
360
480
100
130
180
240
Note:
Luminous flux is tested at a current pulse duration of 25 ms and an accuracy of 11 ꢀ.
The above type numbers represent the order groups which include only a few brightness groups. Only one group will be shipped on each bag
(there will be no mixing of two groups in each bag).
In order to ensure availability, single brightness groups will not be orderable.
In a similar manner for colors where wavelength groups are measured and binned, single wavelength groups will be shipped on any one bag.
In order to ensure availability, single wavelength groups will not be orderable.
COLOR CLASSIFICATION
DOM. WAVELENGTH (NM)
GROUP
SOFT ORANGE
YELLOW
GREEN
PURE GREEN
MIN.
MAX.
MIN.
MAX.
MIN.
MAX.
MIN.
MAX.
559
561
563
565
0
1
2
3
4
5
6
7
8
555
558
560
562
598
600
602
604
606
608
601
603
605
607
609
611
581
583
585
587
589
591
584
586
588
590
592
594
562
564
566
568
570
572
565
567
569
571
573
575
Note:
Wavelengths are tested at a current pulse duration of 25 ms.
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Document Number 83057
Rev. 1.7 25-Mar-08
TLVG/H/P/S/Y420.
Vishay Semiconductors
TYPICAL CHARACTERISTICS
T
= 25 °C, unless otherwise specified
amb
60
50
1.2
1.0
0.8
0.6
0.4
red
40
30
20
10
0
0.2
0
0
20
40
60
80
100
690
590
610
630
650
670
95 10905
λ - Wavelength (nm)
95 10040
Tamb - Ambient Temperature (°C)
Figure 1. Forward Current vs. Ambient Temperature
Figure 4. Relative Intensity vs. Wavelength
1000
red
10000
T
amb
65°C
≤
t /T= 0.01
p
100
1000
100
0.02
0.05
t
t
/T = 0.001
= 10 µs
p
p
10
1
1
10
1
0.2
0.1
0.5
0.1
100
0.01
0.1
t
1
10
0
2
4
6
8
10
V
- Forward Voltage (V)
F
95 10026
- Pulse Length (ms)
95 10047
p
Figure 2. Forward Current vs. Pulse Length
Figure 5. Forward Current vs. Forward Voltage
0° 10° 20° 30° 40°
10
red
50°
1
60°
0.1
70°
80°
0.01
1.0 0.8 0.6 0.4 0.2
0
0.2 0.4
0.8
0.6 1.0
1
10
100
96 11608
I
- Forward Current (mA)
95 10474
F
Figure 3. Rel. Luminous Intensity vs.
Angular Displacement for 90 ° Emission Angle
Figure 6. Relative Luminous Flux vs. Forward Current
Document Number 83057
Rev. 1.7 25-Mar-08
www.vishay.com
5
TLVG/H/P/S/Y420.
Vishay Semiconductors
100
10
1
2.4
red
2.0
soft orange
1.6
1.2
0.8
0.4
0
0.1
0
1
2
3
4
5
I (mA)
F
10
20
50 100 200
0.2 0.1 0.05
500
V
- Forward Voltage (V)
95 9990
F
t /T
p
1
0.5
0.02
95 10473
Figure 7. Rel. Luminous Flux vs. Forw. Current/Duty Cycle
Figure 10. Forward Current vs. Forward Voltage
1.6
red
10
soft orange
1.2
0.8
0.4
1
0.1
I
= 10 mA
20
F
0
0.01
100
0
40
60
80
1
10
100
I
- Forward Current (mA)
T
amb
- Ambient Temperature (°C)
95 10472
96 11601
F
Figure 8. Rel. Luminous Flux vs. Ambient Temperature
Figure 11. Relative Luminous Flux vs. Forward Current
1.2
2.4
soft orange
1.0
soft orange
2.0
0.8
0.6
0.4
1.6
1.2
0.8
0.2
0
0.4
0
I (mA)
F
670
10
1
20
50
100 200
0.05
500
570
590
610
630
650
t /T
p
λ - Wavelength (nm)
96 11600
0.5
0.2 0.1
0.02
95 10324
Figure 9. Relative Intensity vs. Wavelength
Figure 12. Rel. Luminous Flux vs. Forw. Current/Duty Cycle
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Document Number 83057
Rev. 1.7 25-Mar-08
TLVG/H/P/S/Y420.
Vishay Semiconductors
2.0
1.6
1.2
10
1
soft orange
yellow
0.8
0.1
0.4
0
0.01
0
20
40
- Ambient Temperature (°C)
amb
60
80
100
1
10
100
I
- Forward Current (mA)
95 10477
F
T
96 11599
Figure 13. Rel. Luminous Flux vs. Ambient Temperature
Figure 16. Relative Luminous Flux vs. Forward Current
1.2
2.4
yellow
1.0
yellow
2.0
1.6
1.2
0.8
0.8
0.6
0.4
0.2
0
0.4
0
650
550
570
590
610
630
I (mA)
F
10
1
20
50
100 200
0.05
500
λ - Wavelength (nm)
95 10039
95 10476
t /T
p
0.5
0.2 0.1
0.02
Figure 14. Relative Intensity vs. Wavelength
Figure 17. Rel. Luminous Flux vs. Forw. Current/Duty Cycle
1000
1.6
yellow
yellow
100
1.2
0.8
0.4
t
t
/T = 0.001
= 10 µs
p
p
10
1
IF = 10 mA
0
0.1
0
2
4
6
8
10
0
20
40
60
80
100
T
amb
- Ambient Temperature (°C)
V
- Forward Voltage (V)
95 10475
95 10030
F
Figure 15. Forward Current vs. Forward Voltage
Figure 18. Rel. Luminous Flux vs. Ambient Temperature
Document Number 83057
Rev. 1.7 25-Mar-08
www.vishay.com
7
TLVG/H/P/S/Y420.
Vishay Semiconductors
1.2
1.6
1.2
green
green
1.0
0.8
0.6
0.4
0.8
0.4
0.2
0
I
= 10 mA
20
F
0
620
0
40
60
80
100
520
540
560
580
600
T
amb
- Ambient Temperature (°C)
95 10478
λ - Wavelength (nm)
95 10038
Figure 19. Relative Intensity vs. Wavelength
Figure 22. Rel. Luminous Flux vs. Ambient Temperature
1000
2.4
green
2.0
1.6
1.2
0.8
green
100
t
t
/T = 0.001
= 10 µs
p
p
10
1
0.4
0
0.1
I (mA)
F
0
2
4
6
8
10
10
1
20
50
100 200
0.05
500
95 10034
95 10479
t /T
p
V
- Forward Voltage (V)
0.5
0.2 0.1
0.02
F
Figure 20. Forward Current vs. Forward Voltage
Figure 23. Rel. Luminous Flux vs. Forw. Current/Duty Cycle
1.2
10
green
pure green
1.0
0.8
0.6
0.4
1
0.1
0.2
0
0.01
600
500
520
540
560
580
1
10
100
λ - Wavelength (nm)
I
- Forward Current (mA)
95 10325
95 10480
F
Figure 21. Relative Luminous Flux vs. Forward Current
Figure 24. Relative Intensity vs. Wavelength
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Document Number 83057
Rev. 1.7 25-Mar-08
TLVG/H/P/S/Y420.
Vishay Semiconductors
100
10
1
2.0
1.6
1.2
pure green
pure green
0.8
0.4
0.1
0
4
5
0
1
2
3
0
20
40
60
80
100
95 9988
T
amb
- Ambient Temperature (°C)
V
- Forward Voltage (V)
96 11602
F
Figure 25. Forward Current vs. Forward Voltage
Figure 28. Rel. Luminous Flux vs. Ambient Temperature
10
pure green
1
0.1
0.01
1
10
100
I
- Forward Current (mA)
96 11604
F
Figure 26. Relative Luminous Flux vs. Forward Current
2.4
pure green
2.0
1.6
1.2
0.8
0.4
0
I (mA)
F
10
1
20
50
100 200
0.05
500
96 11603
t /T
p
0.5
0.2 0.1
0.02
Figure 27. Rel. Luminous Flux vs. Forw. Current/Duty Cycle
Document Number 83057
Rev. 1.7 25-Mar-08
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9
TLVG/H/P/S/Y420.
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters
9510954
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10
Document Number 83057
Rev. 1.7 25-Mar-08
TLVG/H/P/S/Y420.
Vishay Semiconductors
OZONE DEPLETING SUBSTANCES POLICY STATEMENT
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively.
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA.
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or
unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and
expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such
unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 83057
Rev. 1.7 25-Mar-08
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11
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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1
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