TLZ3V3-GS08 [VISHAY]
Zener Diode,;
| 型号： | TLZ3V3-GS08 |
| 厂家： | 
VISHAY |
| 描述： | Zener Diode, |
| 文件： | 总9页 (文件大小：114K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TLZ...
Vishay Semiconductors
Z–Diodes
Features
D Very sharp reverse characteristic
D Low reverse current level
D Available with tighter tolerances
D Very high stability
D Low noise
D Silicon Epitaxial Planar
D High reliability
Applications
Voltage stabilization
Order Instruction
Type
Ordering Code
TLZ2V4–GS08
TLZ2V4–GS18
Remarks
Tape and Reel (2.500 pcs)
Tape and Reel (10.000 pcs)
TLZ2V4
Absolute Maximum Ratings
T = 25_C
j
Parameter
Test Conditions
Type
Symbol
Value
500
Unit
mW
mA
°C
Power dissipation
Z–current
R
x300K/W
thJA
P
V
I
P /V
V
Z
Z
Junction temperature
Storage temperature range
T
175
j
T
stg
–65...+175
°C
Maximum Thermal Resistance
T = 25_C
j
Parameter
Test Conditions
on PC board 50 mmx50 mmx1.6 mm
Symbol
Value
500
Unit
K/W
Junction ambient
R
thJA
Electrical Characteristics
T = 25_C
j
Parameter
Test Conditions
I =200mA
Type
Symbol Min Typ Max Unit
1.5
Forward voltage
V
V
F
F
Document Number 85635
Rev. A4, 08-JAug-02
www.vishay.com
1 (9)
TLZ...
Vishay Semiconductors
2)
Type
V
V
at I
Z
at I
Z
at I
I
at
I
Rmax
at
Body
Mark-
ing
Zmin
Zmax.
Z
Zmax
Z
ZKmax.
Z
Rmax.
2)
V
V
R
R
(V)
(V)
(mA)
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
(W)
100
100
100
100
100
100
80
80
80
70
70
70
60
60
60
50
50
50
40
40
40
40
25
25
25
25
20
20
20
20
13
13
13
13
(mA)
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
(W)
(mA)
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
(mA)
120
120
120
100
100
100
50
50
50
20
20
20
10
10
10
5
(V)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.5
1.5
1.5
1.5
2.5
2.5
2.5
2.5
(mA)
70
70
70
70
70
70
70
70
20
20
20
20
6
(V)
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
TLZ2V4
2.330 2.630
2000
2000
2000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
900
2V4
2A4
2B4
2V7
2A7
2B7
3V0
3A0
3B0
3V3
3A3
3B3
3V6
3A6
3B6
3V9
3A9
3B9
4V3
4A3
4B3
4C3
4V7
4A7
4B7
4C7
5V1
5A1
5B1
5C1
5V6
5A6
5B6
5C6
TLZ2V4A 2.330 2.520
TLZ2V4B 2.430 2.630
TLZ2V7
2.540 2.910
TLZ2V7A 2.540 2.750
TLZ2V7B 2.690 2.910
TLZ3V0
2.850 3.220
TLZ3V0A 2.850 3.070
TLZ3V0B 3.010 3.220
TLZ3V3
3.160 3.530
TLZ3V3A 3.160 3.380
TLZ3V3B 3.320 3.530
TLZ3V6
3.455 3.845
TLZ3V6A 3.455 3.695
TLZ3V6B 3.600 3.845
6
6
TLZ3V9
3.74
4.16
4.01
4.16
4.57
4.29
4.43
4.57
4.93
4.68
4.80
4.93
5.37
5.07
5.20
5.37
5.91
5.55
5.73
5.91
3
TLZ3V9A 3.74
TLZ3V9B 3.89
5
3
5
3
TLZ4V3
4.04
5
3
TLZ4V3A 4.04
TLZ4V3B 4.17
TLZ4V3C 4.30
5
3
5
3
5
3
TLZ4V7
4.44
5
1.5
1.5
1.5
1.5
0.5
0.5
0.5
0.1
0.1
0.1
0.1
0.1
TLZ4V7A 4.44
TLZ4V7B 4.55
TLZ4V7C 4.68
900
5
900
5
900
5
TLZ5V1
4.81
800
5
TLZ5V1A 4.81
TLZ5V1B 4.94
TLZ5V1C 5.09
800
5
800
5
800
5
TLZ5V6
5.28
500
5
TLZ5V6A 5.28
TLZ5V6B 5.45
TLZ5V6C 5.61
500
5
500
5
500
5
www.vishay.com
2 (9)
Document Number 85635
Rev. A4, 08-Aug-02
TLZ...
Vishay Semiconductors
2)
Type
V
V
at I
Z
at I
Z
at I
I
at
I
at
Body
Mark-
ing
Zmin
.
Zmax.
Z
Zmax
.
Z
ZKmax.
Z
Rmax.
Rmax
2)
V
V
R
R
(V)
(V)
(mA)
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
10
10
10
10
10
10
10
10
10
10
10
10
(W)
10
10
10
10
8
(mA)
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
10
10
10
10
10
10
10
10
10
10
10
10
(W)
300
300
300
300
150
150
150
150
120
120
120
120
120
120
120
120
120
120
120
120
120
120
120
120
120
120
120
120
120
110
110
110
110
110
110
110
110
(mA)
1
(mA)
5
(V)
3.0
3.0
3.0
3.0
3.5
3.5
3.5
3.5
4.0
4.0
4.0
4.0
5.0
5.0
5.0
5.0
6.0
6.0
6.0
6.0
7.0
7.0
7.0
7.0
7.0
8.0
8.0
8.0
8.0
9.0
9.0
9.0
9.0
10
(mA)
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
–
(V)
TLZ6V2
5.78
6.44
6.09
6.27
6.44
7.01
6.63
6.83
7.01
7.67
7.22
7.45
7.67
8.45
7.92
8.19
8.45
9.30
8.73
9.01
9.30
1.0
1.0
2.0
2.0
2.0
2.0
3.0
3.0
3.0
3.0
4.0
4.0
4.0
4.0
4.0
4.0
–
6V2
6A2
6B2
6C2
6V8
6A8
6B8
6C8
7V5
7A5
7B5
7C5
8V2
8A2
8B2
8C2
9V1
9A1
9B1
9C1
10
TLZ6V2A 5.78
TLZ6V2B 5.96
TLZ6V2C 6.12
1
5
1
5
1
5
TLZ6V8
6.29
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
2
TLZ6V8A 6.29
TLZ6V8B 6.49
TLZ6V8C 6.66
8
2
8
2
8
2
TLZ7V5
6.85
8
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
TLZ7V5A 6.85
TLZ7V5B 7.07
TLZ7V5C 7.29
8
8
8
TLZ8V2
7.53
8
TLZ8V2A 7.53
TLZ8V2B 7.78
TLZ8V2C 8.03
8
8
8
TLZ9V1
8.29
8
TLZ9V1A 8.29
TLZ9V1B 8.57
TLZ9V1C 8.83
8
–
–
8
–
–
8
–
–
TLZ10
9.12 10.44
8
–
–
TLZ10A
TLZ10B
TLZ10C
TLZ10D
TLZ11
9.12
9.41
9.59
9.90
8
–
–
10A
10B
10C
10D
11
8
–
–
9.70 10.20
9.94 10.44
10.18 11.38
10.18 10.71
10.50 11.05
10.82 11.38
11.13 12.35
11.13 11.71
11.44 12.03
11.74 12.35
12.11 13.66
12.11 12.75
12.55 13.21
12.99 13.66
8
–
–
8
–
–
10
10
10
10
12
12
12
12
14
14
14
14
–
–
TLZ11A
TLZ11B
TLZ11C
TLZ12
–
–
11A
11B
11C
12
–
–
–
–
–
–
TLZ12A
TLZ12B
TLZ12C
TLZ13
–
–
12A
12B
12C
13
–
–
–
–
–
–
TLZ13A
TLZ13B
TLZ13C
10
–
–
13A
13B
13C
10
–
–
10
–
–
Document Number 85635
Rev. A4, 08-JAug-02
www.vishay.com
3 (9)
TLZ...
Vishay Semiconductors
2)
Type
V
V
at I
Z
at I
Z
at I
I
at
I
Rmax
at
Body
Mark-
ing
Zmin
.
Zmax.
Z
Zmax
.
Z
ZKmax.
Z
Rmax.
2)
V
V
R
R
(V)
(V)
(mA)
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
5
(W)
16
16
16
16
18
18
18
18
23
23
23
23
28
28
28
28
28
30
30
30
30
30
35
35
35
35
35
45
45
45
45
45
55
55
55
55
55
(mA)
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
5
(W)
110
110
110
110
150
150
150
150
150
150
150
150
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
250
250
250
250
250
250
250
250
250
250
(mA)
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
(mA)
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
(V)
11
11
11
11
12
12
12
12
13
13
13
13
15
15
15
15
15
17
17
17
17
17
19
19
19
19
19
21
21
21
21
21
23
23
23
23
23
(mA)
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
(V)
TLZ15
13.44 15.09
13.44 14.13
13.89 14.62
14.35 15.09
14.80 16.51
14.80 15.57
15.25 16.04
15.69 16.51
16.22 18.33
16.22 17.06
16.82 17.70
17.42 18.33
18.02 20.72
18.02 18.96
18.63 19.59
19.23 20.22
19.72 20.72
20.15 22.63
20.15 21.20
20.64 21.71
21.08 22.17
21.52 22.63
22.05 24.85
22.05 23.18
22.61 23.77
23.12 24.31
23.63 24.85
24.26 27.64
24.26 25.52
24.97 26.26
25.63 26.95
26.29 27.64
26.99 30.51
26.99 28.39
27.70 29.13
28.36 29.82
29.02 30.51
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
15
TLZ15A
TLZ15B
TLZ15C
TLZ16
15A
15B
15C
16
TLZ16A
TLZ16B
TLZ16C
TLZ18
16A
16B
16C
18
TLZ18A
TLZ18B
TLZ18C
TLZ20
18A
18B
18C
20
TLZ20A
TLZ20B
TLZ20C
TLZ20D
TLZ22
20A
20B
20C
20D
22
TLZ22A
TLZ22B
TLZ22C
TLZ22D
TLZ24
5
5
22A
22B
22C
22D
24
5
5
5
5
5
5
5
5
TLZ24A
TLZ24B
TLZ24C
TLZ24D
TLZ27
5
5
24A
24B
24C
24D
27
5
5
5
5
5
5
5
5
TLZ27A
TLZ27B
TLZ27C
TLZ27D
TLZ30
5
5
27A
27B
27C
27D
30
5
5
5
5
5
5
5
5
TLZ30A
TLZ30B
TLZ30C
TLZ30D
5
5
30A
30B
30C
30D
5
5
5
5
5
5
www.vishay.com
4 (9)
Document Number 85635
Rev. A4, 08-Aug-02
TLZ...
Vishay Semiconductors
2)
Type
V
V
at I
Z
at I
Z
at I
I
at
I
at
Body
Mark-
ing
Zmin
.
Zmax.
Z
Zmax
.
Z
ZKmax.
Z
Rmax.
Rmax
2)
V
V
R
R
(V)
(V)
(mA)
5
(W)
65
65
65
65
65
75
75
75
75
75
85
85
85
85
85
85
85
85
90
90
100
100
(mA)
5
(W)
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
–
(mA)
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
–
(mA)
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
(V)
25
25
25
25
25
27
27
27
27
27
30
30
30
30
30
30
30
30
33
36
39
43
(mA)
–
(V)
TLZ33
29.68 33.11
29.68 31.22
30.32 31.88
30.90 32.50
31.49 33.11
32.14 35.77
32.14 33.79
32.79 34.49
33.40 35.13
34.01 35.77
34.68 40.80
34.68 36.47
35.36 37.19
36.00 37.85
36.63 38.52
37.36 39.29
38.14 40.11
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
33
33A
33B
33C
33D
36
TLZ33A
TLZ33B
TLZ33C
TLZ33D
TLZ36
5
5
–
5
5
–
5
5
–
5
5
–
5
5
–
TLZ36A
TLZ36B
TLZ36C
TLZ36D
TLZ39
5
5
–
36A
36B
36C
36D
39
5
5
–
5
5
–
5
5
–
5
5
–
TLZ39A
TLZ39B
TLZ39C
TLZ39D
TLZ39E
TLZ39F
5
5
–
39A
39B
39C
39D
39E
39F
39G
43
5
5
–
5
5
–
5
5
–
5
5
–
5
5
–
TLZ39G 38.94 40.80
5
5
–
TLZ43
TLZ47
TLZ51
TLZ56
40.00 45.00
44.00 49.00
48.00 54.00
53.00 60.00
5
5
–
5
5
–
–
–
47
5
5
–
–
–
51
5
5
–
–
–
56
2) Additional measurement
Please note: Additional measurement of voltage group 9V1 to 75 I at 95 % V
= < 35 nA at T 25 _C
R
Zmin
j
Document Number 85635
Rev. A4, 08-JAug-02
www.vishay.com
5 (9)
TLZ...
Vishay Semiconductors
Characteristics (Tj = 25_C unless otherwise specified)
600
15
500
10
400
300
200
5
I =5mA
Z
0
100
0
–5
200
50
0
40
80
120
160
0
10
20
30
40
T
amb
– Ambient Temperature ( °C )
V – Z-Voltage ( V )
Z
95 9602
95 9600
Figure 1. Total Power Dissipation vs.
Ambient Temperature
Figure 4. Temperature Coefficient of Vz vs. Z–Voltage
1000
100
10
200
T =25°C
j
150
V =2V
R
T =25°C
j
100
I =5mA
Z
50
0
1
25
25
0
5
10
15
20
0
5
10
15
20
V
Z
– Z-Voltage ( V )
95 9598
V
Z
– Z-Voltage ( V )
95 9601
Figure 2. Typical Change of Working Voltage under
Figure 5. Diode Capacitance vs. Z–Voltage
Operating Conditions at T =25°C
amb
100
10
1.3
1.2
1.1
V
Ztn
=V /V (25°C)
Zt Z
–4
TK =10 10 /K
VZ
–4
8 10 /K
T =25°C
j
–4
6 10 /K
1
–4
4 10 /K
–4
2 10 /K
0
0.1
0.01
1.0
0.9
0.8
–4
–2 10 /K
–4
–4 10 /K
0.001
1.0
240
0
0.2
0.4
0.6
0.8
–60
0
60
120
180
V – Forward Voltage ( V )
F
T – Junction Temperature ( °C )
j
95 9605
95 9599
Figure 3. Typical Change of Working Voltage vs.
Junction Temperature
Figure 6. Forward Current vs. Forward Voltage
www.vishay.com
6 (9)
Document Number 85635
Rev. A4, 08-Aug-02
TLZ...
Vishay Semiconductors
100
80
1000
100
10
I =1mA
Z
P
T
=500mW
tot
=25°C
amb
60
5mA
40
20
0
10mA
T =25°C
j
1
20
25
0
4
8
12
16
0
5
10
15
20
V
Z
– Z-Voltage ( V )
V – Z-Voltage ( V )
Z
95 9604
95 9606
Figure 7. Z–Current vs. Z–Voltage
Figure 9. Differential Z–Resistance vs. Z–Voltage
50
40
30
P
T
=500mW
tot
=25°C
amb
20
10
0
35
15
20
25
30
V
Z
– Z-Voltage ( V )
95 9607
Figure 8. Z–Current vs. Z–Voltage
1000
100
10
t /T=0.5
p
t /T=0.2
p
Single Pulse
R
DT=T
=300K/W
–T
jmax amb
thJA
t /T=0.01
p
t /T=0.1
p
t /T=0.02
p
2
1/2
t /T=0.05
p
i
=(–V +(V +4r ꢀDT/Z
)
)/(2r )
zj
ZM
Z
Z
zj
thp
1
10
–1
0
1
2
10
10
t – Pulse Length ( ms )
10
95 9603
p
Figure 10. Thermal Response
Document Number 85635
Rev. A4, 08-JAug-02
www.vishay.com
7 (9)
TLZ...
Vishay Semiconductors
Dimensions in mm
96 12070
Marking Voltage Group
TLZ2V4A
TLZ2V4
2A4
2V4
2A4
2V4
2A4
2A4
2V4
2V4
Remark: The Zener voltage TLZ2V4 or Zener voltage group TLZ2V4A is printet
with max 3 digits 3 times on the surface. The marking should be readable
at minimum 2 times. The third print is allowed to be incomplete due to
tolerances in Diameter of the glassbody.
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8 (9)
Document Number 85635
Rev. A4, 08-Aug-02
TLZ...
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the
buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 85635
Rev. A4, 08-JAug-02
www.vishay.com
9 (9)
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