TMPG06-16A/1 [VISHAY]
Trans Voltage Suppressor Diode, 13.6V V(RWM), Unidirectional,;型号: | TMPG06-16A/1 |
厂家: | VISHAY |
描述: | Trans Voltage Suppressor Diode, 13.6V V(RWM), Unidirectional, |
文件: | 总4页 (文件大小:55K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
TMPG06-6.8 thru TMPG06-43A
Vishay Semiconductors
formerly General Semiconductor
Automotive Transient Voltage Suppressors
Breakdown Voltage 6.8 to 43V
Peak Pulse Power 400W
Features
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
• Designed for the hood applications
• Available in uni-directional only
• Exclusive patented PAR® oxide passivated chip
construction
Case Style MPG06
• 400W peak pulse power capability on 10/1000µs
waveform, repetition rate (duty cycle): 1.0%
1.0 (25.4)
MIN.
• Excellent clamping capability
• Low incremental surge resistance
• Very fast response time
0.100 (2.54)
0.090 (2.29)
• For devices with V
≥10V, I are typically less
D
(BR)
than 1.0µA
• High temperature soldering guaranteed:
300°C/10 seconds, 0.375" (9.5mm) lead length,
5lbs. (2.3 kg) tension
0.125 (3.18)
0.115 (2.92)
Available in
uni-directional
only
Mechanical Data
Case: Molded plastic over passivated junction
Terminals: Axial leads, solderable per MIL-STD-750,
Method 2026
1.0 (25.4)
MIN.
Polarity: Color band denotes positive end (cathode)
Mounting Position: Any
Weight: 0.0064 oz., 0.181 g
0.025 (0.635)
0.025 (0.559)
Packaging codes/options:
1/5K per Bulk Box, 50K/box
Dimensions in inches and (millimeters)
3/3K per Ammo Box (26mm Tape), 60K/box
4/5.5K per 13" Reel (52mm Tape), 22K/box
23/3K per Ammo Box (52mm Tape), 27K/box
50/2.5K per Radial-Tape Ammo Box, 10K/box
*
Patent #’s 4,980,315
5,166,769
5,278,094
Maximum Ratings and Thermal Characteristics(TA = 25°C unless otherwise noted)
Parameter
Symbol
Limit
Unit
Peak power dissipation with a 10/1000µs waveform(1) (Fig. 1)
PPPM
Minimum 400
W
Peak pulse power current with a 10/1000µs waveform(1)(2)
(Fig. 3)
IPPM
See Next Table
1.0
A
Steady state power dissipation at TL = 75°C
lead lengths 0.25” (6.33mm)(2)
PM(AV)
W
Peak forward surge current, 8.3ms single half sine-wave(3)
Maximum instantaneous forward voltage at 25A(3)
Operating junction and storage temperature range
IFSM
VF
40
3.5
A
V
TJ, TSTG
–65 to +185
°C
Notes:
(1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25°C per Fig. 2
(2) Mounted on copper pad area of 1.6 x 1.6” (40 x 40mm)
(3) Measured on 8.3ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum
Document Number 88404
03-May-02
www.vishay.com
1
TMPG06-6.8 thru TMPG06-43A
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics(TA = 25°C unless otherwise noted)
Maximum
Reverse Peak Pulse Maximum
Maximum
Temp.
Clamping Coefficient
Breakdown Voltage
Maximum
Reverse
Leakage
V
(1) at I
Test
Current
Stand-off
Voltage
Leakage
at V
Current
(BR)
T
(V)
I
Voltage
at l
of
V
(BR)
WM
PPM
I
T
V
WM
at V
T =150°C
J
(Note 2)
WM
PPM
Device Type
MIN
6.12
6.45
6.75
7.13
7.38
7.79
8.19
8.65
9.00
9.50
9.90
10.5
10.8
11.4
11.7
12.4
13.5
14.3
14.4
15.2
16.2
17.1
18.0
19.0
19.8
20.9
21.6
22.8
24.3
25.7
27.0
28.5
29.7
31.4
32.4
34.2
35.1
37.1
38.7
40.9
MAX
7.48
7.14
8.25
7.88
9.02
8.61
10.0
9.55
11.0
10.5
12.1
11.6
13.2
12.6
14.3
13.7
16.3
15.8
17.6
16.8
19.8
18.9
22.0
21.0
24.2
23.1
26.4
25.2
29.7
28.4
33.0
31.5
36.3
34.7
39.6
37.8
42.9
41.0
47.3
45.2
(mA)
10.0
10.0
10.0
10.0
10.0
10.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
(Volts)
5.50
5.80
6.05
6.40
6.63
7.02
7.37
7.78
8.10
8.55
8.92
9.40
9.72
10.2
10.5
11.1
12.1
12.8
12.9
13.6
14.5
15.3
16.2
17.0
17.8
18.8
19.4
20.5
21.8
23.1
24.3
25.6
26.8
28.2
29.1
30.8
31.6
33.3
34.8
36.8
I
D
(µA)
I
(µA)
(Amps)
V (Volts)
C
(% / °C)
0.057
0.057
0.060
0.061
0.065
0.065
0.068
0.068
0.073
0.073
0.075
0.075
0.076
0.078
0.081
0.081
0.084
0.084
0.086
0.086
0.088
0.088
0.090
0.090
0.092
0.092
0.094
0.094
0.096
0.096
0.097
0.097
0.098
0.098
0.099
0.099
0.100
0.100
0.101
0.101
D
TMPG06-6.8
TMPG06-6.8A
TMPG06-7.5
TMPG06-7.5A
TMPG06-8.2
TMPG06-8.2A
TMPG06-9.1
TMPG06-9.1A
TMPG06-10
TMPG06-10A
TMPG06-11
TMPG06-11A
TMPG06-12
TMPG06-12A
TMPG06-13
TMPG06-13A
TMPG06-15
TMPG06-15A
TMPG06-16
TMPG06-16A
TMPG06-18
TMPG06-18A
TMPG06-20
TMPG06-20A
TMPG06-22
TMPG06-22A
TMPG06-24
TMPG06-24A
TMPG06-27
TMPG06-27A
TMPG06-30
TMPG06-30A
TMPG06-33
TMPG06-33A
TMPG06-36
TMPG06-36A
TMPG06-39
TMPG06-39A
TMPG06-43
TMPG06-43A
300
1000
1000
500
500
200
200
50.0
50.0
20.0
20.0
10.0
10.0
5.0
27.8
28.6
25.6
26.5
24.0
24.8
21.7
22.4
26.7
27.6
24.7
25.6
23.1
24.0
21.1
22.0
18.2
18.9
17.0
17.8
15.1
15.9
13.7
14.4
12.5
13.1
11.5
12.0
10.2
10.7
9.2
10.8
10.5
11.7
11.3
12.5
12.1
13.8
13.4
15.0
14.5
16.2
15.6
17.3
16.7
19.0
18.2
22.0
21.2
23.5
22.5
26.5
25.5
29.1
27.7
31.9
30.6
34.2
33.2
39.1
37.5
43.5
41.4
47.7
45.7
52.0
49.9
56.4
53.9
61.9
59.3
300
150
150
50.0
50.0
10.0
10.0
5.0
5.0
2.0
2.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
9.7
5.0
8.4
5.0
8.8
5.0
7.7
5.0
8.0
5.0
7.1
5.0
7.4
5.0
6.5
5.0
6.7
Notes: (1) V(BR) measured after IT applied for 300µs, IT = square wave pulse or equivalent
(2) Surge current waveform per Fig. 3 and derated per Fig. 2
(3) All terms and symbols are consistent with ANSI/IEEE C62.35
www.vishay.com
2
Document Number 88404
03-May-02
TMPG06-6.8 thru TMPG06-43A
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Fig. 2 – Pulse Derating Curve
Fig. 1 – Peak Pulse Power Rating Curve
100
100
Non-repetitive Pulse
Waveform shown in Fig. 3
TA = 25°C
75
50
10
TMPG06-10 — TMPG06-43A
1.0
25
0
TMPG06-6.8 — TMPG06-9.1A
0.1
25
50
75
150
175
200
0
100
125
0.1µs
1.0µs
10µs
100µs
1.0ms
10ms
td — Pulse Width (sec.)
TA — Ambient Temperature (°C)
Fig. 4 – Typical Junction Capacitance
Fig. 3 – Pulse Waveform
10,000
1,000
100
150
100
50
TJ = 25°C
f = 1.0MHz
Vsig = 50mVp-p
TJ = 25°C
Pulse Width (td)
tr = 10µsec.
is defined as the point
Peak Value
IPPM
where the peak current
decays to 50% of IPPM
Measured at
Zero Bias
Half Value — IPP
IPPM
2
Measured at
Stand-Off
Voltage, VWM
10/1000µsec. Waveform
as defined by R.E.A.
td
10
0
1.0
3.0
4.0
1.0
10
100
200
0
2.0
V(BR) — Breakdown Voltage (V)
t — Time (ms)
Fig. 5 – Steady State Power
Fig. 6 - Maximum Non-Repetitive
Forward Surge Current
Derating Curve
1.00
100
TL = 75°C
8.3ms Single Half Sine-Wave
(JEDEC Method)
60HZ
Resistive or
Inductive Load
L = 0.375" (9.5mm)
Lead Lengths
0.75
0.50
1.6 x 1.6 x 0.040"
(40 x 40 x 1mm)
Copper Heat Sinks
0.25
0
10
25
50
75
150
175
200
0
100
125
1
10
100
Number of Cycles at 60 Hz
TL — Lead Temperature (°C)
Document Number 88404
03-May-02
www.vishay.com
3
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
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