TN0201K-T1-E3 [VISHAY]
N-Channel 20−V (D−S) MOSFET; N通道20 -V (D -S )的MOSFET![TN0201K-T1-E3](http://pdffile.icpdf.com/pdf1/p00037/img/icpdf/TN0201K_191990_icpdf.jpg)
型号: | TN0201K-T1-E3 |
厂家: | ![]() |
描述: | N-Channel 20−V (D−S) MOSFET |
文件: | 总5页 (文件大小:78K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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TN0201K/TN0201KL
Vishay Siliconix
New Product
N-Channel 20−V (D−S) MOSFET
FEATURES
PRODUCT SUMMARY
D TrenchFETr Power MOSFET
APPLICATIONS
ID (A)
V(BR)DSS
Min (V)
rDS(on)
TN0201K TN0201KL
Max (W)
VGS(th) (V)
D Direct Logic-Level Interface: TTL/CMOS
1.0 @ V = 10 V
GS
0.42
0.35
0.64
0.53
D Drivers: Relays, Solenoids, Lamps, Hammers,
20
1.0 to 3.0
Displays, Memories, Transistors, etc.
1.4 @ V = 4.5 V
GS
D Battery Operated Systems
D Solid-State Relays
TO-236
(SOT-23)
TO-226AA
(TO-92)
1
2
3
Device Marking
Front View
S
G
D
G
S
1
2
3
D
“S” TN
0201KL
xxyy
“S” = Siliconix Logo
xxyy = Date Code
Top View
TN0201K
Top View
Marking Code: K3ywl
TN0201KL
K3 = Part Number Code for TN0201K
y = Year Code
w = Week Code
l = Lot Traceability
Ordering Information: TN0201K-T1—E3 (Lead Free)
Ordering Information: TN0201KL-TR1
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Limit
TN0201K
TN0201KL
Parameter
Symbol
Unit
Drain-Source Voltage
Gate-Source Voltage
V
20
DS
GS
V
V
"20
T = 25_C
A
0.42
0.33
0.8
0.64
0.51
1.5
A
Continuous Drain Current (T = 150__C)
I
J
D
T = 70_C
A
a
Pulsed Drain Current
I
DM
T = 25_C
A
0.35
0.22
357
0.8
A
Power Dissipation
P
W
D
T = 70_C
0.51
156
Thermal Resistance, Junction-to-Ambient
R
thJA
_C/W
_C
Operating Junction and Storage Temperature Range
T , T
J
−55 to 150
stg
Notes
a. Pulse width limited by maximum junction temperature.
Document Number: 72671
S-40245—Rev. A, 16-Feb-04
www.vishay.com
1
TN0201K/TN0201KL
Vishay Siliconix
New Product
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
A
Limits
Typ
Parameter
Symbol
Test Conditions
Min
Max
Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
V
V
= 0 V, I = 10 mA
20
(BR)DSS
GS
D
V
V
V
= V , I = 0.25 mA
1.0
2.0
3.0
"100
1
GS(th)
DS
GS D
I
V
= 0 V, V = "20 V
nA
GSS
DS
GS
V
= 20 V, V = 0 V
GS
DS
Zero Gate Voltage Drain Current
I
mA
DSS
V
= 20 V, V = 0 V, T = 55_C
10
DS
GS
J
TN0201K
0.5
0.8
a
On-State Drain Current
I
V
= 10 V, V = 10 V
A
D(on)
DS
GS
TN0201KL
V
= 4.5 V, I = 0.1 A
0.8
1.4
1.0
GS
D
a
Drain-Source On-Resistance
r
W
DS(on)
V
V
= 10 V, I = 0.3 A
0.47
550
GS
D
a
Forward Transconductance
g
fs
= 10 V, I = 0.3 A
mS
V
DS
D
Diode Forward Voltage
V
I
= 0.3 A, V = 0 V
0.85
1.2
SD
S
GS
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Q
1000
205
200
48
1500
g
V
= 16 V, V = 10 V
GS
D
DS
Q
gs
Q
gd
pC
I
^ 0.3 A
R
g
W
t
4.5
8
8
d(on)
Turn-On Time
Turn-Off Time
V
D
= 15 V, R = 50 W
L
t
r
15
15
12
DD
ns
I
^^ 0.3 A, V
= 10 V
GEN
t
9
R
= 6 W
d(off)
G
t
f
6.3
Notes
a. Pulse test: PW v300 ms duty cycle v2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
0.8
1.0
0.8
0.6
0.4
0.2
0.0
V
= 10 thru 5 V
GS
4 V
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
T = 125_C
J
3 V
2 V
25_C
−55_C
0.0
0.4
0.8
1.2
1.6
2.0
0
1
2
3
4
5
V
− Drain-to-Source Voltage (V)
V
− Gate-to-Source Voltage (V)
GS
DS
Document Number: 72671
S-40245—Rev. A, 16-Feb-04
www.vishay.com
2
TN0201K/TN0201KL
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
1.5
50
40
30
20
10
0
1.2
C
iss
V
= 4.5 V
GS
0.9
0.6
0.3
0.0
C
oss
V
= 10 V
GS
C
rss
0.0
0.1
DS
0.2
0.3
0.4
0.5
0.6
0.7
0.8
1.0
1.4
0
4
8
12
16
20
I
− Drain Current (A)
V
DS
− Drain-to-Source Voltage (V)
D
Gate Charge
On-Resistance vs. Junction Temperature
10
8
1.6
1.4
1.2
1.0
0.8
0.6
V
I
= 16 V
= 0.3 A
D
V
D
= 10 V
= 0.3 A
GS
I
6
V
D
= 4.5 V
GS
I
= 0.1 A
4
2
0
0.0
0.2
0.4
0.6
0.8
−50 −25
0
25
50
75
100 125 150
Q
g
− Total Gate Charge (nC)
T
J
− Junction Temperature (_C)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
2.4
2.0
1.6
1.2
0.8
0.4
0.0
3
1
T = 150_C
J
I
D
= 0.3 A
0.1
0.01
T = 25_C
J
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
4
8
12
16
20
V
− Source-to-Drain Voltage (V)
V
GS
− Gate-to-Source Voltage (V)
SD
Document Number: 72671
S-40245—Rev. A, 16-Feb-04
www.vishay.com
3
TN0201K/TN0201KL
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.4
0.2
I
D
= 250 mA
−0.0
−0.2
−0.4
−0.6
−50 −25
0
25
50
75
100 125 150
T
J
− Temperature (_C)
Safe Operating Area (TO-236, TN0201K Only)
Safe Operating Area (TO-226AA, TN0201KL Only)
10
1
10
I
DM
I
Limited
DM
Limited
r
Limited
DS(on)
r
Limited
DS(on)
1 ms
1
0.1
1 ms
10 ms
10 ms
100 ms
10 s
I
D(on)
Limited
0.1
I
D(on)
100 ms
1 s
dc
Limited
1 s
10 s
dc
T
= 25_C
T
= 25_C
A
A
0.01
0.01
Single Pulse
Single Pulse
BV
DSS
Limited
BV
DSS
Limited
0.001
0.001
0.1
0.1
1
10
100
1
10
100
V
− Drain-to-Source Voltage (V)
V
DS
− Drain-to-Source Voltage (V)
DS
Normalized Thermal Transient Impedance, Junction-to-Ambient (TO-236, TN0201K Only)
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
−4
−3
−2
−1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Document Number: 72671
S-40245—Rev. A, 16-Feb-04
www.vishay.com
4
TN0201K/TN0201KL
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Ambient (TO-226AA, TN0201KL Only)
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
−4
−3
−2
−1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Document Number: 72671
S-40245—Rev. A, 16-Feb-04
www.vishay.com
5
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