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TN0201K-T1-E3

更新时间：2025-06-28 01:49:41
品牌：VISHAY
描述：N-Channel 20−V (D−S) MOSFET

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TN0201K-T1-E3 概述

N-Channel 20−V (D−S) MOSFET N通道20 -V （D -S ）的MOSFET MOS管 小信号场效应晶体管

TN0201K-T1-E3 规格参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Obsolete零件包装代码：SOT-23
包装说明：SMALL OUTLINE, R-PDSO-G3针数：3
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.21.00.95风险等级：5.64
其他特性：LOGIC LEVEL COMPATIBLE配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：20 V最大漏极电流 (Abs) (ID)：0.42 A
最大漏极电流 (ID)：0.42 A最大漏源导通电阻：1 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-236AB
JESD-30 代码：R-PDSO-G3JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：0.35 W认证状态：Not Qualified
子类别：FET General Purpose Powers表面贴装：YES
端子面层：Matte Tin (Sn)端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：40
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

TN0201K-T1-E3 数据手册

通过下载TN0201K-T1-E3数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。

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TN0201K/TN0201KL  
Vishay Siliconix  
New Product  
N-Channel 20−V (D−S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
D TrenchFETr Power MOSFET  
APPLICATIONS  
ID (A)  
V(BR)DSS  
Min (V)  
rDS(on)  
TN0201K TN0201KL  
Max (W)  
VGS(th) (V)  
D Direct Logic-Level Interface: TTL/CMOS  
1.0 @ V = 10 V  
GS  
0.42  
0.35  
0.64  
0.53  
D Drivers: Relays, Solenoids, Lamps, Hammers,  
20  
1.0 to 3.0  
Displays, Memories, Transistors, etc.  
1.4 @ V = 4.5 V  
GS  
D Battery Operated Systems  
D Solid-State Relays  
TO-236  
(SOT-23)  
TO-226AA  
(TO-92)  
1
2
3
Device Marking  
Front View  
S
G
D
G
S
1
2
3
D
“S” TN  
0201KL  
xxyy  
“S” = Siliconix Logo  
xxyy = Date Code  
Top View  
TN0201K  
Top View  
Marking Code: K3ywl  
TN0201KL  
K3 = Part Number Code for TN0201K  
y = Year Code  
w = Week Code  
l = Lot Traceability  
Ordering Information: TN0201K-T1—E3 (Lead Free)  
Ordering Information: TN0201KL-TR1  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Limit  
TN0201K  
TN0201KL  
Parameter  
Symbol  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
20  
DS  
GS  
V
V
"20  
T = 25_C  
A
0.42  
0.33  
0.8  
0.64  
0.51  
1.5  
A
Continuous Drain Current (T = 150__C)  
I
J
D
T = 70_C  
A
a
Pulsed Drain Current  
I
DM  
T = 25_C  
A
0.35  
0.22  
357  
0.8  
A
Power Dissipation  
P
W
D
T = 70_C  
0.51  
156  
Thermal Resistance, Junction-to-Ambient  
R
thJA  
_C/W  
_C  
Operating Junction and Storage Temperature Range  
T , T  
J
−55 to 150  
stg  
Notes  
a. Pulse width limited by maximum junction temperature.  
Document Number: 72671  
S-40245—Rev. A, 16-Feb-04  
www.vishay.com  
1
 
TN0201K/TN0201KL  
Vishay Siliconix  
New Product  
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Limits  
Typ  
Parameter  
Symbol  
Test Conditions  
Min  
Max  
Unit  
Static  
Drain-Source Breakdown Voltage  
Gate-Threshold Voltage  
Gate-Body Leakage  
V
V
= 0 V, I = 10 mA  
20  
(BR)DSS  
GS  
D
V
V
V
= V , I = 0.25 mA  
1.0  
2.0  
3.0  
"100  
1
GS(th)  
DS  
GS D  
I
V
= 0 V, V = "20 V  
nA  
GSS  
DS  
GS  
V
= 20 V, V = 0 V  
GS  
DS  
Zero Gate Voltage Drain Current  
I
mA  
DSS  
V
= 20 V, V = 0 V, T = 55_C  
10  
DS  
GS  
J
TN0201K  
0.5  
0.8  
a
On-State Drain Current  
I
V
= 10 V, V = 10 V  
A
D(on)  
DS  
GS  
TN0201KL  
V
= 4.5 V, I = 0.1 A  
0.8  
1.4  
1.0  
GS  
D
a
Drain-Source On-Resistance  
r
W
DS(on)  
V
V
= 10 V, I = 0.3 A  
0.47  
550  
GS  
D
a
Forward Transconductance  
g
fs  
= 10 V, I = 0.3 A  
mS  
V
DS  
D
Diode Forward Voltage  
V
I
= 0.3 A, V = 0 V  
0.85  
1.2  
SD  
S
GS  
Dynamicb  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
Gate Resistance  
Q
1000  
205  
200  
48  
1500  
g
V
= 16 V, V = 10 V  
GS  
D
DS  
Q
gs  
Q
gd  
pC  
I
^ 0.3 A  
R
g
W
t
4.5  
8
8
d(on)  
Turn-On Time  
Turn-Off Time  
V
D
= 15 V, R = 50 W  
L
t
r
15  
15  
12  
DD  
ns  
I
^^ 0.3 A, V  
= 10 V  
GEN  
t
9
R
= 6 W  
d(off)  
G
t
f
6.3  
Notes  
a. Pulse test: PW v300 ms duty cycle v2%.  
b. Guaranteed by design, not subject to production testing.  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Output Characteristics  
Transfer Characteristics  
0.8  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
V
= 10 thru 5 V  
GS  
4 V  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
T = 125_C  
J
3 V  
2 V  
25_C  
−55_C  
0.0  
0.4  
0.8  
1.2  
1.6  
2.0  
0
1
2
3
4
5
V
− Drain-to-Source Voltage (V)  
V
− Gate-to-Source Voltage (V)  
GS  
DS  
Document Number: 72671  
S-40245—Rev. A, 16-Feb-04  
www.vishay.com  
2
TN0201K/TN0201KL  
Vishay Siliconix  
New Product  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
On-Resistance vs. Drain Current  
Capacitance  
1.5  
50  
40  
30  
20  
10  
0
1.2  
C
iss  
V
= 4.5 V  
GS  
0.9  
0.6  
0.3  
0.0  
C
oss  
V
= 10 V  
GS  
C
rss  
0.0  
0.1  
DS  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
1.0  
1.4  
0
4
8
12  
16  
20  
I
− Drain Current (A)  
V
DS  
− Drain-to-Source Voltage (V)  
D
Gate Charge  
On-Resistance vs. Junction Temperature  
10  
8
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
V
I
= 16 V  
= 0.3 A  
D
V
D
= 10 V  
= 0.3 A  
GS  
I
6
V
D
= 4.5 V  
GS  
I
= 0.1 A  
4
2
0
0.0  
0.2  
0.4  
0.6  
0.8  
−50 −25  
0
25  
50  
75  
100 125 150  
Q
g
− Total Gate Charge (nC)  
T
J
− Junction Temperature (_C)  
Source-Drain Diode Forward Voltage  
On-Resistance vs. Gate-to-Source Voltage  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
0.0  
3
1
T = 150_C  
J
I
D
= 0.3 A  
0.1  
0.01  
T = 25_C  
J
0.001  
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
0
4
8
12  
16  
20  
V
− Source-to-Drain Voltage (V)  
V
GS  
− Gate-to-Source Voltage (V)  
SD  
Document Number: 72671  
S-40245—Rev. A, 16-Feb-04  
www.vishay.com  
3
TN0201K/TN0201KL  
Vishay Siliconix  
New Product  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Threshold Voltage  
0.4  
0.2  
I
D
= 250 mA  
−0.0  
−0.2  
−0.4  
−0.6  
−50 −25  
0
25  
50  
75  
100 125 150  
T
J
− Temperature (_C)  
Safe Operating Area (TO-236, TN0201K Only)  
Safe Operating Area (TO-226AA, TN0201KL Only)  
10  
1
10  
I
DM  
I
Limited  
DM  
Limited  
r
Limited  
DS(on)  
r
Limited  
DS(on)  
1 ms  
1
0.1  
1 ms  
10 ms  
10 ms  
100 ms  
10 s  
I
D(on)  
Limited  
0.1  
I
D(on)  
100 ms  
1 s  
dc  
Limited  
1 s  
10 s  
dc  
T
= 25_C  
T
= 25_C  
A
A
0.01  
0.01  
Single Pulse  
Single Pulse  
BV  
DSS  
Limited  
BV  
DSS  
Limited  
0.001  
0.001  
0.1  
0.1  
1
10  
100  
1
10  
100  
V
− Drain-to-Source Voltage (V)  
V
DS  
− Drain-to-Source Voltage (V)  
DS  
Normalized Thermal Transient Impedance, Junction-to-Ambient (TO-236, TN0201K Only)  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
0.1  
0.05  
0.02  
Single Pulse  
0.01  
−4  
−3  
−2  
−1  
10  
10  
10  
10  
1
10  
100  
600  
Square Wave Pulse Duration (sec)  
Document Number: 72671  
S-40245—Rev. A, 16-Feb-04  
www.vishay.com  
4
TN0201K/TN0201KL  
Vishay Siliconix  
New Product  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Normalized Thermal Transient Impedance, Junction-to-Ambient (TO-226AA, TN0201KL Only)  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
0.1  
0.05  
0.02  
Single Pulse  
0.01  
−4  
−3  
−2  
−1  
10  
10  
10  
10  
1
10  
100  
600  
Square Wave Pulse Duration (sec)  
Document Number: 72671  
S-40245—Rev. A, 16-Feb-04  
www.vishay.com  
5

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