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TN2010L-2 [VISHAY]

Small Signal Field-Effect Transistor, 0.18A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA;

TN2010L-2


元器件型号：	TN2010L-2
生产厂家：	VISHAY TELEFUNKEN
描述和应用：	Small Signal Field-Effect Transistor, 0.18A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA 晶体管
PDF文件：	总2页 (文件大小：43K)
下载文档：	下载PDF数据表文档文件
型号参数：TN2010L-2参数

TN2010L-2TA

Small Signal Field-Effect Transistor, 0.18A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA

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0 VISHAY

TN2010L-2TR1

Small Signal Field-Effect Transistor, 0.18A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA

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0 VISHAY

TN2010LTA

Small Signal Field-Effect Transistor, 0.18A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA

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0 VISHAY

TN2010T

N-Channel Enhancement-Mode MOSFET Transistor

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15 ETC

TN2010T

N-Channel Enhancement-Mode MOSFET Transistor

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32 ETC

TN2010T

Small Signal Field-Effect Transistor, 0.12A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236,

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0 TEMIC

TN2010T

Small Signal Field-Effect Transistor, 0.12A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, SOT-23, 3 PIN

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0 VISHAY

TN2010TT1

Small Signal Field-Effect Transistor, 0.12A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, 3 PIN

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0 VISHAY

TN2010TT1

Small Signal Field-Effect Transistor, 0.12A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236,

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0 TEMIC

TN2010T-T1

120mA, 200V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, TO-236, 3 PIN

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0 VISHAY

TN20-13-6

Iron powder toroids

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14 FERROXCUBE

TN2017

TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 1A I(C) | TO-237

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19 ETC

TN-203127-10-9

Label format - Old format order code cross reference

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22 MACOM

TN210

Adapting HC 908GZ16 Stationery for HC908GZ8

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46 ETC

TN210

Adapting HC 908GZ16 Stationery for HC908GZ8

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37 ETC

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