TO-220AB [VISHAY]

N-Channel 100-V (D-S) 175 °C MOSFET; N沟道100 -V （ D- S） 175℃ MOSFET


型号：	TO-220AB
厂家：	VISHAY
描述：	N-Channel 100-V (D-S) 175 °C MOSFET N沟道100 -V （ D- S） 175℃ MOSFET
文件：	总6页 (文件大小：104K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SUP/SUB85N10-10

Vishay Siliconix

N-Channel 100-V (D-S) 175 °C MOSFET

FEATURES

PRODUCT SUMMARY

•

TrenchFET^®Power MOSFET

V_(BR)DSS(V)

r_DS(on)(Ω)

I_D(A)

Available

175 °C Maximum Junction Temperature

0.0105 at V_GS= 10 V

0.012 at V_GS= 4.5 V

RoHS*

85^a

COMPLIANT

100

TO-220AB

TO-263

DRAIN connected to TAB

D S

Top View

G D S

SUB85N10-10

N-Channel MOSFET

Top View

SUP85N10-10

ORDERING INFORMATION

Package

TO-220AB

TO-263

Tin/Lead Plated

SUP85N10-10

SUB85N10-10

Lead (Pb)-free

SUP85N10-10-E3

SUB85N10-10-E3

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Drain-Source Voltage

Gate-Source Voltage

Symbol

V_DS

V_GS

Limit

100

Unit

_C= 25 °C

85^a

I_D

Continuous Drain Current (T_J= 150 °C)

T_C= 125 °C

60^a

I_DM

I_AS

E_AS

240

280

Pulsed Drain Current

Avalanche Current

Single Pulse Avalanche Energy^b

L = 0.1 mH

T_C= 25 °C (TO-220AB and TO-263)

T_A= 25 °C (TO-263)^d

250^c

3.75

- 55 to 175

Maximum Power Dissipation^b

P_D

T_J, T_stg

Operating Junction and Storage Temperature Range

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

R_thJA

Limit

Unit

PCB Mount (TO-263)^d

Free Air (TO-220AB)

Junction-to-Ambient

Junction-to-Case

°C/W

62.5

0.6

R_thJC

Notes:

a. Package limited.

b. Duty cycle ≤ 1 %.

c. See SOA curve fo voltage derating.

d. When mounted on 1" square PCB (FR-4 material).

* Pb containing terminations are not RoHS compliant, exemptions may apply.

Document Number: 71141

S-61008–Rev. D, 12-Jun-06

www.vishay.com

SUP/SUB85N10-10

Vishay Siliconix

SPECIFICATIONS T = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Static

V_(BR)DSS

V_GS(th)

I_GSS

V_GS= 0 V, I_D= 250 µA

V_DS= V_GS, I_D= 250 µA

Drain-Source Breakdown Voltage

Gate-Threshold Voltage

Gate-Body Leakage

100

V_DS= 0 V, V_GS

20 V

100

V_DS= 100 V, V_GS= 0 V

I_DSS

V_DS= 100 V, V_GS= 0 V, T_J= 125 °C

Zero Gate Voltage Drain Current

On-State Drain Current^a

µA

_DS= 100 V, V_GS= 0 V, T_J= 175 °C

_DS= ≥ 5 V, V_GS= 10 V

V_GS= 10 V, I_D= 30 A

_GS= 4.5 V, I_D= 20 A

250

I_D(on)

120

0.0085

0.010

0.0105

0.0012

0.017

Drain-Source On-State Resistance^a

Forward Transconductance^a

r_DS(on)

_GS= 10 V, I_D= 30 A, T_J= 125 °C

_GS= 10 V, I_D= 30 A, T_J= 175 °C

V_DS= 15 V, I_D= 30 A

0.022

g_fs

Dynamic^b

C_iss

C_oss

C_rss

Q_g

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge^c

Gate-Source Charge^c

Gate-Drain Charge^c

Turn-On Delay Time^c

Rise Time^c

6550

665

265

105

V_GS= 0 V, V_DS= 25 V, f = 1 MHz

V_DS= 50 V, V_GS= 10 V, I_D= 85 A

160

Q_gs

Q_gd

t_d(on)

t_r

135

V_DD= 50 V, R_L= 0.6 Ω

I_D≅ 85 A, V_GEN= 10 V, R_g= 2.5 Ω

Turn-Off DelayTime^c

Fall Time^c

t_d(off)

t_f

130

195

Source-Drain Diode Ratings and Characteristics (T_C= 25 °C)^b

I_S

I_SM

Continuous Current

240

1.5

140

Pulsed Current

Forward Voltage^a

Reverse Recovery Time

Peak Reverse Recovery Current

Reverse Recovery Charge

V_SD

t_rr

I_F= 85 A, V_GS= 0 V

1.0

I_RM(REC)

Q_rr

I_F= 50 A, di/dt = 100 A/µs

4.5

µC

0.17

0.35

Notes:

a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

c. Independent of operating temperature.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

www.vishay.com

Document Number: 71141

S-61008–Rev. D, 12-Jun-06

SUP/SUB85N10-10

Vishay Siliconix

TYPICAL CHARACTERISTICS T = 25 °C, unless otherwise noted

250

200

150

100

200

150

100

= 10 thru 6 V

5 V

= 125 °C

4 V

25 °C

- 55 °C

3 V

− Drain-to-Source Voltage (V)

− Gate-to-Source Voltage (V)

VGS

Output Characteristics

Transfer Characteristics

250

0.020

= - 55 °C

25 °C

200

150

100

0.015

0.010

0.005

0.000

= 4.5 V

125 °C

= 10 V

100

120

− Drain Current (A)

Transconductance

On-Resistance vs. Drain Current

10000

8000

6000

4000

2000

= 50 V

= 85 A

iss

rss

oss

100

150

200

− Drain-to-Source Voltage (V)

− Total Gate Charge (nC)

Capacitance

Gate Charge

Document Number: 71141

S-61008–Rev. D, 12-Jun-06

www.vishay.com

SUP/SUB85N10-10

Vishay Siliconix

TYPICAL CHARACTERISTICS T = 25 °C, unless otherwise noted

2.5

2.0

1.5

1.0

0.5

0.0

100

= 10 V

= 30 A

T = 150 °C

T = 25 °C

- 50 - 25

75 100 125 150 175

0.3

0.6

0.9

1.2

− Junction Temperature (°C)

− Source-to-Drain Voltage (V)

VSD

Source-Drain Diode Forward Voltage

On-Resis^Jtance vs. Junction Temperature

1000

100

140

130

120

110

100

= 250 µA

(A) at T = 25 °C

(A) at T = 150 °C

0.1

- 50 - 25

75 100 125 150 175

0.00001

0.0001

0.001

0.01

(Sec)

0.1

− Junction Temperature (°C)

Avalanche Current vs. Time

T_J- Drain-Source Breakdown

vs. Junction-Temperature

www.vishay.com

Document Number: 71141

S-61008–Rev. D, 12-Jun-06

SUP/SUB85N10-10

Vishay Siliconix

THERMAL RATINGS

1000

100

10 µs

100

µs

*Limited

by r

DS(on)

1 ms

10 ms

100 ms

= 25 °C

Single Pulse

0.1

100

125

150

175

0.1

100

1000

− Drain-to-Source Voltage (V)

− Ambient Temperature (°C)

minimum V at which r

is specified

DS(on)

Maximum Avalanche and Drain Current

vs. Case Temterature

Safe Operating Area

Duty Cycle = 0.5

0.2

0.1

0.05

0.02

Single Pulse

0.01

-4

-3

-2

-1

Square Wave Pulse Duration (sec)

Normalized Thermal Transient Impedance, Junction-to-Case

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-

nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability

data, see http://www.vishay.com/ppg?71141.

Document Number: 71141

S-61008–Rev. D, 12-Jun-06

www.vishay.com

Legal Disclaimer Notice

Vishay

Notice

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,

or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by

estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's

terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express

or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness

for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.

Customers using or selling these products for use in such applications do so at their own risk and agree to fully

indemnify Vishay for any damages resulting from such improper use or sale.

Document Number: 91000

Revision: 08-Apr-05

www.vishay.com

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