TP0202K [VISHAY]
P-Channel 30-V (D-S) MOSFET; P通道30 -V （D -S ）的MOSFET
| 型号： | TP0202K |
| 厂家： | 
VISHAY |
| 描述： | P-Channel 30-V (D-S) MOSFET |
| 文件： | 总4页 (文件大小：63K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TP0202K
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V(BR)DSS(min) (V)
rDS(on)
(
ꢀ
)
VGS(th) (V)
ID (mA)
Qg (Typ)
1.4 @ V = −10 V
−1.3 to −3.0
−1.3 to −3.0
−385
−240
GS
−30
1000
3.5 @ V = −4.5 V
GS
FEATURES
BENEFITS
APPLICATIONS
D High-Side Switching
D Ease in Driving Switches
D Low Offset (Error) Voltage
D Low-Voltage Operation
D Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
D Low On-Resistance: 1.2 Ω (typ)
D Low Threshold: −2.0 V (typ)
D Battery Operated Systems
D Power Supply Converter Circuits
D Solid State Relays
D Fast Swtiching Speed: 14 ns (typ) D High-Speed Circuits
D Low Input Capacitance: 31 pF (typ) D Easily Driven Without Buffer
D Gate-Source ESD Protection
TO-236
(SOT-23)
G
S
1
2
Ordering Information: TP0202K-T1
TP0202K-T1—E3 (Lead (Pb)-Free)
3
D
Marking Code: 2Kwll
2K = Part Number Code for TP0202K
w = Week Code
ll = Lot Traceability
Top View
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V
−30
"20
DS
GS
V
V
T
= 25_C
= 85_C
−385
−280
−750
350
A
a
Continuous Drain Current (T = 150__C)
I
J
D
T
A
mA
b
Pulse Drain Current
I
DM
T
A
= 25_C
= 85_C
a
P
Power Dissipation
D
mW
T
A
185
a
Maximum Junction-to-Ambient
R
350
_C/W
_C
thJA
Operating Junction and Storage Temperature Range
T , T
−55 to 150
J
stg
Notes
a. Surface mounted on FR4 board.
b. Pulse width limited by maximum junction temperature.
Document Number: 71609
S-41777—Rev. D, 04-Oct-04
www.vishay.com
1
TP0202K
Vishay Siliconix
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
V
V
= 0 V, I = −100 ꢁA
−30
−38
−2
(BR)DSS
GS
D
V
V
V
= V , I = −250 ꢁA
−1.3
−3.0
"50
"300
−100
−10
GS(th)
DS
GS D
V
= 0 V, V = "5 V
DS
DS
GS
Gate-Body Leakage
I
GSS
V
= 0 V, V = "10 V
nA
GS
V
= −30 V, V = 0 V
GS
DS
Zero Gate Voltage Drain Current
I
DSS
V
= −30 V, V = 0 V, T = 85_C
ꢁ
A
DS
GS
J
a
On-State Drain Current
I
V
= −10 V, V = −10 V
−500
mA
D(on)
DS
GS
GS
GS
V
= −4.5 V, I = −50 mA
2.1
1.25
315
3.5
1.4
D
a
Drain-Source On-Resistance
r
ꢀ
DS(on)
V
= −10 V, I = −500 mA
D
a
Forward Transconductance
g
fs
V
= −5 V, I = −200 mA
mS
V
DS
D
a
Diode Forward Voltage
V
I
S
= −250 mA, V = 0 V
−1.2
SD
GS
Dynamic
Total Gate Charge
Q
1000
225
175
31
g
Gate-Source Charge
Gate-Drain Charge
Q
Q
V
= −16 V, V = −10 V, I ^ −200 mA
pC
pF
gs
gd
iss
DS
GS
D
Input Capacitance
C
C
Output Capacitance
Reverse Transfer Capacitance
11
V
= −15 V, V = 0 V, f = 1 MHz
GS
oss
DS
C
rss
4
Switchingb
t
t
9
6
d(on)
Turn-On Time
t
r
V
= −15 V, R = 75 ꢀ
L
DD
ns
I
D
^ −200 mA, V
= −10 V, R = 6 ꢀ
GEN G
30
20
d(off)
Turn-Off Time
Notes
t
f
a. Pulse test: PW v300 ms duty cycle v2%.
b. Switching time is essentially independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 71609
S-41777—Rev. D, 04-Oct-04
www.vishay.com
2
TP0202K
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
For the following graphs, p-channel negative polarities for all voltage and current values are represented as positive values.
Output Characteristics
Transfer Characteristics
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1200
1000
800
600
400
200
0
6 V
V
= 10 V
GS
5.5 V
8 V
7 V
T = −55_C
J
5 V
4.5 V
25_C
4 V
3.5 V
3 V
125_C
0
1
2
3
4
5
20
20
0
1
2
3
4
5
6
V
− Drain-to-Source Voltage (V)
V
− Gate-to-Source Voltage (V)
GS
DS
On-Resistance vs. Gate-Source Voltage
On-Resistance vs. Drain Current
20
16
12
8
14
12
10
8
V
= 4.5 V
= 10 V
GS
V
GS
6
4
V
= 4.5 V
GS
4
V
= 10 V
800
GS
2
0
0
0
4
8
12
16
0
200
400
600
1000
V
− Gate -to-Source Voltage (V)
I
D
− Drain Current (mA)
GS
Capacitance
Gate Charge
50
40
30
20
10
0
16
14
12
10
8
V
= 0 V
f = 1 MHz
GS
I = 200 mA
D
C
iss
V
= 16 V
DS
V
= 10 V
DS
6
C
oss
4
C
rss
2
0
0
4
8
12
16
0
200 400 600 800 1000 1200 1400 1600
− Total Gate Charge (pC)
V
− Drain-to-Source Voltage (V)
Q
g
DS
Document Number: 71609
S-41777—Rev. D, 04-Oct-04
www.vishay.com
3
TP0202K
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
For the following graphs, p-channel negative polarities for all voltage and current values are represented as positive values.
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1000
V
= 0 V
GS
V
= 10 V @ 200 mA
GS
100
T = 150_C
J
V
= 4.5 V @ 50 mA
GS
T = 25_C
J
10
1
T = −55_C
J
−50 −25
0
25
50
75
100 125 150
0.00
0.3
0.6
0.9
1.2
1.5
T
J
− Junction Temperature (_C)
V
− Source-to-Drain Voltage (V)
SD
Threshold Voltage Variance Over Temperature
I
vs. Temperature
GSS
0.5
0.4
1000
100
V
= 10 V
GS
I
D
= 250 ꢁA
0.3
0.2
0.1
V
= 5 V
GS
−0.0
−0.1
−0.2
−0.3
10
1
−50 −25
0
25
50
75
100 125 150
25
50
75
100
125
150
T
J
− Junction Temperature (_C)
T
J
− Junction Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 350_C/W
thJA
(t)
3. T − T = P
Z
JM
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
−4
−3
−2
−1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see
http://www.vishay.com/ppg?71609.
Document Number: 71609
S-41777—Rev. D, 04-Oct-04
www.vishay.com
4
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