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TP0610L-TA [VISHAY]

Small Signal Field-Effect Transistor, 0.18A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA;
TP0610L-TA
型号： TP0610L-TA
厂家： VISHAY    VISHAY
描述：

Small Signal Field-Effect Transistor, 0.18A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA

晶体 晶体管
文件： 总4页 (文件大小：49K)
中文：  中文翻译
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TP0610K  
Vishay Siliconix  
New Product  
P-Channel 60-V (D-S) MOSFET  
PRODUCT SUMMARY  
V(BR)DSS(min) (V)  
rDS(on)  
(
ꢀ
)
VGS(th) (V)  
ID (mA)  
–60  
6 @ V = –10 V  
–1 to –3.0  
–185  
GS  
FEATURES  
BENEFITS  
APPLICATIONS  
D High-Side Switching  
D Ease in Driving Switches  
D Low Offset (Error) Voltage  
D Low-Voltage Operation  
D Drivers: Relays, Solenoids, Lamps, Hammers,  
Displays, Memories, Transistors, etc.  
D Low On-Resistance: 6 Ω  
D Low Threshold: –2 V (typ)  
D Battery Operated Systems  
D Power Supply Converter Circuits  
D Solid State Relays  
D Fast Swtiching Speed: 20 ns (typ) D High-Speed Circuits  
D Low Input Capacitance: 20 pF (typ) D Easily Driven Without Buffer  
D Gate-Source ESD Protection  
TO-236  
(SOT-23)  
G
S
1
2
Marking Code: 6Kwll  
6K = Part Number Code for TP0610K  
w = Week Code  
ll = Lot Traceability  
3
D
Top View  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
Limit  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
–60  
"20  
DS  
GS  
V
V
T
= 25_C  
= 100_C  
–185  
–115  
A
a
Continuous Drain Current  
I
D
T
A
mA  
b
Pulse Drain Current  
I
–800  
350  
DM  
T
A
= 25_C  
= 100_C  
a
P
Power Dissipation  
D
mW  
T
A
140  
a
Maximum Junction-to-Ambient  
R
350  
_C/W  
_C  
thJA  
Operating Junction and Storage Temperature Range  
T , T  
–55 to 150  
J
stg  
Notes  
a. Surface mounted on FR4 board.  
b. Pulse width limited by maximum junction temperature.  
Document Number: 71411  
S-04279—Rev. C, 16-Jul-01  
www.vishay.com  
11-1  
TP0610K  
New Product  
Vishay Siliconix  
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
Test Condition  
Min  
Typ  
Max  
Unit  
Static  
Drain-Source Breakdown Voltage  
Gate-Threshold Voltage  
V
V
= 0 V, I = –10 µA  
–60  
–1  
(BR)DSS  
GS  
D
V
V
V
= V , I = –250 µA  
–3.0  
"10  
GS(th)  
DS  
GS D  
V
V
= 0 V, V = "20 V  
ꢁA  
DS  
DS  
GS  
= 0 V, V = "10 V  
"200  
"500  
"100  
–25  
GS  
Gate-Body Leakage  
I
GSS  
V
= 0 V, V = "10 V, T = 85_C  
V
DS  
GS  
J
= 0 V, V = "5 V  
GS  
nA  
DS  
V
= –50 V, V = 0 V  
GS  
DS  
Zero Gate Voltage Drain Current  
I
DSS  
V
= –50 V, V = 0 V, T = 85_C  
–250  
DS  
GS  
J
V
= –10 V, V = –4.5 V  
–50  
DS  
GS  
a
On-State Drain Current  
I
mA  
D(on)  
V
= –10 V, V = –10 V  
–600  
DS  
GS  
GS  
GS  
V
= –4.5 V, I = –25 mA  
10  
6
D
a
V
= –10 V, I = –500 mA  
Drain-Source On-Resistance  
r
ꢀ
D
DS(on)  
V
= –10 V, I = –500 mA, T = 125_C  
9
GS  
D
J
a
Forward Transconductance  
g
V
= –10 V, I = –100 mA  
80  
mS  
V
fs  
DS  
D
a
Diode Forward Voltage  
V
I
S
= –200 mA, V = 0 V  
–1.4  
SD  
GS  
Dynamic  
Total Gate Charge  
Q
1.7  
0.26  
0.46  
23  
g
Gate-Source Charge  
Gate-Drain Charge  
Q
Q
V
= –30 V, V = –15 V, I ^ –500 mA  
nC  
pF  
gs  
gd  
iss  
DS  
GS  
D
Input Capacitance  
C
C
Output Capacitance  
Reverse Transfer Capacitance  
10  
V
= –25 V, V = 0 V, f = 1 MHz  
GS  
oss  
DS  
C
rss  
5
Switchingb  
Turn-On Time  
Turn-Off Time  
V
= –25 V, R = 150 ꢀ  
L
t
20  
35  
DD  
ON  
ns  
I
D
^ –200 mA, V  
= –10 V  
GEN  
t
R
G
= 10 ꢀ  
OFF  
Notes  
a. Pulse test: PW v300 ms duty cycle v2%.  
TPJO60  
b. Switching time is essentially independent of operating temperature.  
Document Number: 71411  
S-04279—Rev. C, 16-Jul-01  
www.vishay.com  
11-2  
TP0610K  
Vishay Siliconix  
New Product  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
For the following graphs, p-channel negative polarities for all voltage and current values are represented as positive values.  
Output Characteristics  
Transfer Characteristics  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
1200  
900  
600  
300  
0
V
= 10 V  
GS  
T = –55_C  
J
7 V  
6 V  
8 V  
25_C  
125_C  
5 V  
4 V  
0
1
2
3
4
5
0
2
4
6
8
10  
V
– Drain-to-Source Voltage (V)  
V
– Gate-to-Source Voltage (V)  
GS  
DS  
On-Resistance vs. Drain Current  
Capacitance  
40  
32  
24  
16  
8
20  
16  
12  
8
V
= 0 V  
GS  
V
= 4.5 V  
GS  
C
iss  
V
= 5 V  
GS  
C
oss  
V
= 10 V  
GS  
4
C
rss  
0
0
0
5
10  
15  
20  
25  
0
200  
400  
600  
800  
1000  
I
D
– Drain Current (mA)  
V
DS  
– Drain-to-Source Voltage (V)  
Gate Charge  
On-Resistance vs. Junction Temperature  
15  
12  
9
1.8  
1.5  
1.2  
0.9  
0.6  
0.3  
0.0  
I
D
= 500 mA  
V
= 30 V  
DS  
V
= 10 V @ 500 mA  
GS  
V
= 48 V  
DS  
V
= 4.5 V @ 25 mA  
GS  
6
3
0
0.0  
0.3  
0.6  
0.9  
1.2  
1.5  
1.8  
–50 –25  
0
J
25  
50  
75  
100 125 150  
Q
g
– Total Gate Charge (nC)  
T
– Junction Temperature (_C)  
Document Number: 71411  
S-04279—Rev. C, 16-Jul-01  
www.vishay.com  
11-3  
TP0610K  
New Product  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
For the following graphs, p-channel negative polarities for all voltage and current values are represented as positive values.  
Source-Drain Diode Forward Voltage  
On-Resistance vs. Gate-Source Voltage  
10  
8
1000  
100  
V
= 0 V  
GS  
I
D
= 500 mA  
6
T = 125_C  
J
4
I
D
= 200 mA  
10  
1
T = 25_C  
J
2
T = –55_C  
J
0
0
2
4
6
8
10  
0.00  
0.3  
0.6  
0.9  
1.2  
1.5  
V
– Source-to-Drain Voltage (V)  
V
GS  
– Gate-to-Source Voltage (V)  
SD  
Threshold Voltage Variance Over Temperature  
Single Pulse Power, Junction-to-Ambient  
0.5  
3
0.4  
2.5  
I
D
= 250 ꢁA  
0.3  
2
0.2  
1.5  
0.1  
–0.0  
–0.1  
–0.2  
–0.3  
1
0.5  
0
T
A
= 25_C  
–50 –25  
0
25  
50  
75  
100 125 150  
0.01  
0.1  
1
10  
100  
600  
T
J
– Junction Temperature (_C)  
Time (sec)  
Normalized Thermal Transient Impedance, Junction-to-Ambient  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
Notes:  
P
DM  
0.1  
0.05  
0.02  
t
1
t
2
t
t
1
2
1. Duty Cycle, D =  
2. Per Unit Base = R  
= 350_C/W  
thJA  
(t)  
Z
3. T – T = P  
DM thJA  
JM  
A
Single Pulse  
4. Surface Mounted  
0.01  
–4  
–3  
–2  
–1  
10  
10  
10  
10  
1
10  
100  
600  
Square Wave Pulse Duration (sec)  
Document Number: 71411  
S-04279—Rev. C, 16-Jul-01  
www.vishay.com  
11-4  

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