TPC7.5AHM3_A/H [VISHAY]
Trans Voltage Suppressor Diode, 1500W, 6.4V V(RWM), Unidirectional, 1 Element, Silicon, TO-277A,;
| 型号： | TPC7.5AHM3_A/H |
| 厂家： | 
VISHAY |
| 描述： | Trans Voltage Suppressor Diode, 1500W, 6.4V V(RWM), Unidirectional, 1 Element, Silicon, TO-277A, 局域网 光电二极管 |
| 文件： | 总5页 (文件大小：98K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TPC6.8A thru TPC51A
Vishay General Semiconductor
www.vishay.com
Surface Mount PAR® Transient Voltage Suppressors
Uni-directional 1500 W TVS in TO-277 (SMPC) Package
FEATURES
eSMP® Series
Available
• Junction
passivation
optimized
design
passivated anisotropic rectifier technology
A
• TJ = 185 °C capability suitable for high reliability
and automotive requirement
• Very low profile - typical height of 1.1 mm
• Ideal for automated placement
• Uni-direction only
1
2
TO-277A (SMPC)
• Excellent clamping capability
• Low incremental surge resistance
• Very fast response time
Cathode 1
A
Anode
Cathode 2
• Meets MSL level 1, per J-STD-020
• AEC-Q101 qualified
PRIMARY CHARACTERISTICS
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
VWM
5.8 V to 43.6 V
6.8 V to 51 V
1500 W
VBR
PPPM
MECHANICAL DATA
Case: TO-277A (SMPC)
Molding compound meets UL 94 V-0 flammability rating
TJ max.
Polarity
Package
185 °C
Uni-directional
TO-277A (SMPC)
Base P/NHM3_X - halogen-free, RoHS-compliant, and
AEC-Q101 qualified (“X” denotes revision code e.g. A, B, ...)
TYPICAL APPLICATIONS
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
HM3 suffix meets JESD 201 class 2 whisker test
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, automotive, and telecommunication.
MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
PPPM
IPPM
VALUE
1500
UNIT
W
Peak power dissipation with a 10/1000 μs waveform (fig. 3) (1)(2)
Peak power pulse current with a 10/1000 μs waveform (fig. 1) (1)
Peak forward surge current 8.3 ms single half sine-wave (2)
Maximum instantaneous forward voltage at 100 A (3)
Operating junction and storage temperature range
See next table
200
A
IFSM
A
VF
3.5
V
TJ, TSTG
-65 to +185
°C
Notes
(1)
Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2
Measured on 8.3 ms single half sine-wave, or equivalent square wave, duty cycle = 4 pulses per minute maximum
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
(3)
Revision: 04-Nov-16
Document Number: 89056
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TPC6.8A thru TPC51A
Vishay General Semiconductor
www.vishay.com
ELECTRICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
BREAKDOWN
MAXIMUM
REVERSE
LEAKAGE
AT VWM
MAXIMUM
PEAK
MAXIMUM
MAXIMUM
CLAMPING
VOLTAGE
AT IPPM
VOLTAGE
TEST
CURRENT
IT
STAND-OFF
VOLTAGE
VWM
DEVICE
MARKING
CODE
REVERSE
LEAKAGE
AT VWM
VBR (1) AT IT (V)
PULSE
DEVICE
TYPE
SURGE
(mA)
(V)
TJ = 150 °C
CURRENT
MIN.
MAX.
IR (μA)
VC (V)
ID (μA)
IPPM (2) (A)
TPC6.8A
TPC7.5A
TPC8.2A
TPC9.1A
TPC10A
TPC11A
TPC12A
TPC13A
TPC15A
TPC16A
TPC18A
TPC20A
TPC22A
TPC24A
TPC27A
TPC30A
TPC33A
TPC36A
TPC39A
TPC43A
TPC47A
TPC51A
DEP
DGP
DKP
DMP
DPP
DRP
DTP
DVP
DXP
DZP
EEP
EGP
EKP
EMP
EPP
ERP
ETP
EVP
EXP
EZP
FEP
FGP
6.45
7.13
7.79
8.65
9.5
7.14
7.88
8.61
9.55
10.5
11.6
12.6
13.7
15.8
16.8
18.9
21.0
23.1
25.2
28.4
31.5
34.7
37.8
41.0
45.2
49.4
53.6
10
10
5.80
6.40
7.02
7.78
8.55
9.40
10.2
11.1
12.8
13.6
15.3
17.1
18.8
20.5
23.1
25.6
28.2
30.8
33.3
36.8
40.2
43.6
1500
500
200
50
10 000
5000
2000
500
200
50
143
133
10.5
11.3
12.1
13.4
14.5
15.6
16.7
18.2
21.2
22.5
25.2
27.7
30.6
33.2
37.5
41.4
45.7
49.9
53.9
59.3
64.8
70.1
10
124
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
112
20
103
10.5
11.4
12.4
14.3
15.2
17.1
19.0
20.9
22.8
25.7
28.5
31.4
34.2
37.1
40.9
44.7
48.5
5.0
2.0
2.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
96.2
89.8
82.4
70.8
66.7
59.5
54.2
49.0
45.2
40.0
36.2
32.8
30.1
27.8
25.3
23.1
21.4
10
10
10
10
10
10
10
10
10
10
10
15
15
20
20
20
Notes
(1)
(2)
(3)
VBR measured after IT applied for 300 μs, IT = square wave pulse or equivalent
Surge current waveform per fig. 3 and derated per fig. 2
All terms and symbols are consistent with ANSI/IEEE C62.35
ORDERING INFORMATION (Example)
PREFERRED P/N
TPC10AHM3_A/H (1)
TPC10AHM3_A/I (1)
UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY
DELIVERY MODE
0.10
0.10
H
I
1500
6500
7" diameter plastic tape and reel
13" diameter plastic tape and reel
Note
(1)
Automotive grade
Revision: 04-Nov-16
Document Number: 89056
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TPC6.8A thru TPC51A
Vishay General Semiconductor
www.vishay.com
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C, unless otherwise noted)
10 000
100
10
1
VR, measured at
Zero Bias
TA = 25 °C
Non-Repetitive Pulse
Waveform shown in Fig. 3
VR measured at
Stand-Off Voltage, VWM
1000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
100
0.1
1
10
100
0.1 µs
1.0 µs
10 µs
td - Pulse Width (s)
Fig. 1 - Peak Pulse Power Rating Curve
100 µs
1.0 ms
10 ms
VBR - Breakdown Voltage (V)
Fig. 4 - Typical Junction Capacitance
100
10
1
100
75
50
25
0
RthJA, by mounted
on recommended
PCB 2 oz. area
0.1
0.01
0.1
1
10
Tp - Pulse Duration (s)
Fig. 5 - Typical Transient Thermal Impedance
100
1000
50
TJ - Initial Temperature (°C)
0
100
150
200
Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature
150
TJ = 25 °C
Pulse Width (td)
tr = 10 µs
is defined as the Point
where the Peak Current
decays to 50 % of IPPM
Peak Value
IPPM
100
50
0
Half Value -
IPP
2
IPPM
10/1000 µs Waveform
as defined by R.E.A.
td
1.0
3.0
4.0
0
2.0
t - Time (ms)
Fig. 3 - Pulse Waveform
Revision: 04-Nov-16
Document Number: 89056
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TPC6.8A thru TPC51A
Vishay General Semiconductor
www.vishay.com
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-277A (SMPC)
0.187 (4.75)
0.175 (4.45)
0.016 (0.40)
0.006 (0.15)
A
0.262 (6.65)
0.250 (6.35)
0.242 (6.15)
0.238 (6.05)
2
1
0.047 (1.20)
0.039 (1.00)
0.171 (4.35)
0.167 (4.25)
0.146 (3.70)
0.134 (3.40)
Mounting Pad Layout
0.087 (2.20)
0.075 (1.90)
0.189 (4.80)
MIN.
0.189 (4.80)
0.173 (4.40)
0.186 (4.72)
MIN.
0.268
(6.80)
0.155 (3.94)
NOM.
0.030 (0.75) NOM.
0.049 (1.24)
0.037 (0.94)
0.050 (1.27)
MIN.
0.084 (2.13) NOM.
0.053 (1.35)
0.041 (1.05)
0.041
(1.04)
0.055 (1.40)
MIN.
Conform to JEDEC® TO-277A
Revision: 04-Nov-16
Document Number: 89056
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
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Disclaimer
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Revision: 13-Jun-16
Document Number: 91000
1
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