TPSMA10HE3_B/H [VISHAY]
Trans Voltage Suppressor Diode, 400W, 8.1V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AC, SMA, 2 PIN;
| 型号： | TPSMA10HE3_B/H |
| 厂家： | 
VISHAY |
| 描述： | Trans Voltage Suppressor Diode, 400W, 8.1V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AC, SMA, 2 PIN 局域网 光电二极管 |
| 文件： | 总5页 (文件大小：84K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TPSMA6.8 thru TPSMA43A
www.vishay.com
Vishay General Semiconductor
Surface Mount PAR® Transient Voltage Suppressors
High Temperature Stability and High Reliability Conditions
FEATURES
• Junction
passivation
optimized
design
passivated anisotropic rectifier technology
• TJ = 185 °C capability suitable for high reliability
and automotive requirement
• Available in uni-directional polarity only
• 400 W peak pulse power capability with a 10/1000 μs
waveform, repetitive rate (duty cycle): 0.01 %
DO-214AC (SMA)
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
PRIMARY CHARACTERISTICS
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
VWM
5.5 V to 36.8 V
VBR
6.8 V to 43 V
400 W
• AEC-Q101 qualified
PPPM
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PD
1.0 W
IFSM
40 A
MECHANICAL DATA
TJ max.
Polarity
Package
185 °C
Case: DO-214AC (SMA)
Uni-directional
DO-214AC (SMA)
Molding compound meets UL 94 V-0 flammability rating
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
(“X” denotes revision code e.g. A, B, ..., revision code only
applicable for part number with 5 % tolerance)
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, automotive, and telecommunication.
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
HE3 suffix meets JESD 201 class 2 whisker test
Polarity: color band denotes cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
Peak power dissipation with a 10/1000 μs waveform (1)(2) (fig. 3)
Peak power pulse current with a 10/1000 μs waveform (1) (fig. 1)
Power dissipation at TA = 25 °C (4)
SYMBOL
PPPM
IPPM
VALUE
UNIT
W
400
See next table
1.0
A
PD
W
Peak forward surge current 8.3 ms single half sine-wave (3)
Maximum instantaneous forward voltage at 25 A (3)
Operating junction and storage temperature range
IFSM
40
A
VF
3.5
V
TJ, TSTG
-65 to +185
°C
Notes
(1)
Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2
Mounted on PCB with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads attached to each terminal
Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minutes maximum
Mounted on minimum recommended pad layout
(2)
(3)
(4)
Revision: 22-Jul-16
Document Number: 88405
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TPSMA6.8 thru TPSMA43A
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
BREAKDOWN
MAXIMUM
PEAK
TJ = 150 °C
MAXIMUM
REVERSE
LEAKAGE AT
VWM
VOLTAGE
VBR (1) AT IT
(V)
STAND- MAXIMUM
OFF REVERSE
VOLTAGE LEAKAGE
MAXIMUM
CLAMPING
VOLTAGE
AT IPPM
TEST
CURRENT
IT
DEVICE
MARKING
CODE
PULSE
DEVICE TYPE
SURGE
VWM
(V)
AT VWM
IR (μA)
CURRENT
(mA)
(2)
IPPM
VC (V)
MIN.
MAX.
ID (μA)
(A)
37.0
38.1
34.2
35.4
32.0
33.1
29.0
29.9
26.7
27.6
24.7
25.6
23.1
24.0
21.1
22.0
18.2
18.9
17.0
17.8
15.1
15.9
13.7
14.4
12.5
13.1
11.5
12.0
10.2
10.7
9.2
TPSMA6.8
TPSMA6.8A
TPSMA7.5
TPSMA7.5A
TPSMA8.2
TPSMA8.2A
TPSMA9.1
TPSMA9.1A
TPSMA10
TPSMA10A
TPSMA11
TPSMA11A
TPSMA12
TPSMA12A
TPSMA13
TPSMA13A
TPSMA15
TPSMA15A
TPSMA16
TPSMA16A
TPSMA18
TPSMA18A
TPSMA20
TPSMA20A
TPSMA22
TPSMA22A
TPSMA24
TPSMA24A
TPSMA27
TPSMA27A
TPSMA30
TPSMA30A
TPSMA33
TPSMA33A
TPSMA36
TPSMA36A
TPSMA39
TPSMA39A
TPSMA43
TPSMA43A
ADP
AEP
AFP
AGP
AHP
AKP
ALP
AMP
ANP
APP
AQP
ARP
ASP
ATP
AUP
AVP
AWP
AXP
AYP
AZP
BDP
BEP
BFP
BGP
BHP
BKP
BLP
BMP
BNP
BPP
BQP
BRP
BSP
BTP
BUP
BVP
BWP
BXP
BYP
BZP
6.12
6.45
7.48
7.14
10
10
5.50
5.80
300
300
150
150
50
1000
1000
500
500
200
200
50
10.8
10.5
11.7
11.3
12.5
12.1
13.8
13.0
15.0
14.5
16.2
15.6
17.3
16.7
19.0
18.2
22.0
21.2
23.5
22.0
26.5
25.5
29.1
27.7
31.9
30.6
34.7
33.2
39.1
37.5
43.5
41.4
47.0
45.7
52.0
49.9
56.4
53.9
61.9
59.3
6.75
8.25
10
6.05
7.13
7.88
10
6.40
7.38
9.02
10
6.63
7.79
8.61
10
7.02
50
8.19
10.00
9.55
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
7.37
10
8.65
7.78
10
50
9.00
11.00
10.50
12.10
11.60
13.20
12.60
14.30
13.70
16.30
15.80
17.60
16.80
19.80
18.90
22.00
21.00
24.20
23.10
26.40
25.20
29.70
28.40
33.00
31.50
36.30
34.70
39.60
37.80
42.90
41.00
47.30
45.20
8.10
5.0
5.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
20
9.50
8.65
20
9.90
8.92
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
10.50
10.80
11.40
11.70
12.40
13.50
14.30
14.40
15.20
16.20
17.10
18.00
19.00
19.80
20.90
21.60
22.80
24.30
25.70
27.00
28.50
29.70
31.40
32.40
34.20
35.10
37.10
38.70
40.90
9.40
9.72
10.20
10.50
11.10
12.10
12.80
12.90
13.60
14.50
15.30
16.20
17.10
17.80
18.80
19.40
20.50
21.80
23.10
24.30
25.60
26.80
28.20
29.10
30.80
31.60
33.30
34.80
36.80
9.7
8.4
8.8
7.7
8.0
7.1
7.4
6.5
6.7
Notes
(1)
(2)
(3)
VBR measured after IT applied for 300 μs, IT = square wave pulse or equivalent
Surge current waveform per fig. 3 and derated per fig. 2
All terms and symbols are consistent with ANSI/IEEE C62.35
Revision: 22-Jul-16
Document Number: 88405
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TPSMA6.8 thru TPSMA43A
www.vishay.com
Vishay General Semiconductor
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY
DELIVERY MODE
TPSMA6.8AHE3_A/H (1)
TPSMA6.8AHE3_A/I (1)
TPSMA6.8AHE3_B/H (1)
TPSMA6.8AHE3_B/I (1)
0.064
0.064
0.064
0.064
H
I
1800
7500
1800
7500
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
H
I
Note
(1)
AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
100
150
TJ = 25 °C
Pulse Width (td)
is defined as the Point
where the Peak Current
decays to 50 % of IPPM
Non-Repetitive Pulse
Waveform shown in Fig. 3
TA = 25 °C
tr = 10 µs
Peak Value
IPPM
10
1.0
0.1
100
50
0
Half Value -
IPPM
IPP
2
10/1000 µs Waveform
as defined by R.E.A.
0.2 x 0.2" (5.0 x 5.0 mm)
Copper Pad Areas
td
td
0.1 µs
1.0 µs
10 µs
100 µs
1.0 ms
10 ms
1.0
3.0
4.0
0
2.0
td - Pulse Width (s)
t - Time (ms)
Fig. 1 - Peak Pulse Power Rating Curve
Fig. 3 - Pulse Waveform
100
75
10 000
1000
100
VR measured
at Zero Bias
V
R measured at
50
Stand-Off, VWM
25
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10
0
1
10
VBR - Breakdown Voltage (V)
100
0
50
100
150
200
TJ - Initial Temperature (°C)
Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature
Fig. 4 - Typical Junction Capacitance
Revision: 22-Jul-16
Document Number: 88405
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TPSMA6.8 thru TPSMA43A
www.vishay.com
Vishay General Semiconductor
200
TJ = TJ max.
8.3 ms Single Half Sine-Wave
100
50
10
1
5
10
50
100
Number of Cycles at 60 Hz
Fig. 5 - Maximum Non-Repetitive Peak Forward Surge Current
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AC (SMA)
Cathode Band
Mounting Pad Layout
0.074 (1.88)
0.066 (1.68)
MAX.
MIN.
0.110 (2.79)
0.100 (2.54)
0.065 (1.65)
0.049 (1.25)
0.177 (4.50)
0.157 (3.99)
0.060 (1.52)
MIN.
0.012 (0.305)
0.006 (0.152)
0.208 (5.28)
REF.
0.090 (2.29)
0.078 (1.98)
0.060 (1.52)
0.030 (0.76)
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
Revision: 22-Jul-16
Document Number: 88405
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
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Vishay
Disclaimer
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
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particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Revision: 13-Jun-16
Document Number: 91000
1
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