TPSMA13HE3_A/I [VISHAY]
TVS DIODE 10.5V 19V DO214AC;
| 型号： | TPSMA13HE3_A/I |
| 厂家： | 
VISHAY |
| 描述： | TVS DIODE 10.5V 19V DO214AC 电视 |
| 文件： | 总5页 (文件大小：91K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TPSMA6.8A thru TPSMA43A
www.vishay.com
Vishay General Semiconductor
Surface-Mount PAR® Transient Voltage Suppressors
High Temperature Stability and High Reliability Conditions
FEATURES
Available
• Junction passivation optimized design
passivated anisotropic rectifier technology
• TJ = 185 °C capability suitable for high
reliability and automotive requirement
• Available in uni-directional polarity only
• 400 W peak pulse power capability with a
10/1000 μs waveform, repetitive rate
(duty cycle): 0.01 %
Available
SMA (DO-214AC)
• Excellent clamping capability
Cathode
Anode
• Very fast response time
• Low incremental surge resistance
LINKS TO ADDITIONAL RESOURCES
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
3
D
3D Models
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHE3 or P/NHM3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
VWM
5.8 V to 36.8 V
VBR
6.8 V to 43 V
400 W
MECHANICAL DATA
PPPM
Case: SMA (DO-214AC)
PD
1.0 W
Molding compound meets UL 94 V-0 flammability rating
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
Base P/NHM3_X - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
IFSM
40 A
TJ max.
Polarity
Package
185 °C
Unidirectional
SMA (DO-214AC)
(“_X” denotes revision code e.g. A, B, ...)
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
HE3 and HM3 suffix meets JESD 201 class 2 whisker test
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lightning
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, automotive, and telecommunication.
Polarity: color band denotes cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
Peak power dissipation with a 10/1000 μs waveform (1)(2) (fig. 3)
Peak power pulse current with a 10/1000 μs waveform (1) (fig. 1)
Power dissipation at TA = 25 °C (4)
SYMBOL
PPPM
IPPM
VALUE
UNIT
W
400
See next table
1.0
A
PD
W
Peak forward surge current 8.3 ms single half sine-wave (3)
Maximum instantaneous forward voltage at 25 A (3)
Operating junction and storage temperature range
IFSM
40
A
VF
3.5
V
TJ, TSTG
-65 to +185
°C
Notes
(1)
Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2
Mounted on PCB with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads attached to each terminal
Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minutes maximum
Mounted on minimum recommended pad layout
(2)
(3)
(4)
Revision: 19-Apr-2021
Document Number: 88405
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TPSMA6.8A thru TPSMA43A
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
BREAKDOWN
MAXIMUM
PEAK
TJ = 150 °C
MAXIMUM
REVERSE
LEAKAGE
AT VWM
TYPICAL
TEMP.
VOLTAGE
VBR (1) AT IT
(V)
STAND-
OFF
MAXIMUM
REVERSE
MAXIMUM
CLAMPING
VOLTAGE
AT IPPM
TEST
CURRENT
IT
DEVICE
DEVICE TYPE MARKING
CODE
PULSE
COEFFICIENT
VOLTAGE LEAKAGE
SURGE
(3)
OF VBR
VWM
(V)
AT VWM
IR (μA)
CURRENT
(mA)
αT
(%/°C)
(2)
IPPM
VC (V)
MIN. NOM. MAX.
ID (μA)
(A)
38.1
35.4
33.1
29.9
27.6
25.6
24.0
22.0
18.9
17.8
15.9
14.4
13.1
12.0
10.7
9.7
TPSMA6.8A
TPSMA7.5A
TPSMA8.2A
TPSMA9.1A
TPSMA10A
TPSMA11A
TPSMA12A
TPSMA13A
TPSMA15A
TPSMA16A
TPSMA18A
TPSMA20A
TPSMA22A
TPSMA24A
TPSMA27A
TPSMA30A
TPSMA33A
TPSMA36A
TPSMA39A
TPSMA43A
AEP
AGP
AKP
AMP
APP
ARP
ATP
AVP
AXP
AZP
BEP
BGP
BKP
BMP
BPP
BRP
BTP
BVP
BXP
BZP
6.45
7.13
7.79
8.65
9.50
6.80
7.50
8.20
9.10
7.14
7.88
8.61
9.55
10
10
5.80
6.40
300
150
50
1000
500
200
50
10.5
11.3
12.1
13.0
14.5
15.6
16.7
18.2
21.2
22.0
25.5
27.7
30.6
33.2
37.5
41.4
45.7
49.9
53.9
59.3
0.047
0.052
0.056
0.060
0.064
0.067
0.070
0.072
0.076
0.078
0.080
0.082
0.084
0.085
0.087
0.088
0.089
0.090
0.091
0.092
10
7.02
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
7.78
10
10.0 10.50
8.65
5.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
20
10.50 11.0 11.60
11.40 12.0 12.60
12.40 13.0 13.70
14.30 15.0 15.80
15.20 16.0 16.80
17.10 18.0 18.90
19.00 20.0 21.00
20.90 22.0 23.10
22.80 24.0 25.20
25.70 27.0 28.40
28.50 30.0 31.50
31.40 33.0 34.70
34.20 36.0 37.80
37.10 39.0 41.00
40.90 43.0 45.20
9.40
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
10.20
11.10
12.80
13.60
15.30
17.10
18.80
20.50
23.10
25.60
28.20
30.80
33.30
36.80
8.8
8.0
7.4
6.7
Notes
(1)
(2)
(3)
(4)
VBR measured after IT applied for 300 μs, IT = square wave pulse or equivalent
Surge current waveform per fig. 3 and derated per fig. 2
To calculate VBR vs. junction temperature, use the following formula: VBR at TJ = VBR at 25 °C x (1 + αT x (TJ - 25))
All terms and symbols are consistent with ANSI/IEEE C62.35
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY
DELIVERY MODE
TPSMA6.8AHE3_B/H (1)
TPSMA6.8AHE3_B/I (1)
TPSMA6.8AHM3_B/H (1)
TPSMA6.8AHM3_B/I (1)
0.064
0.064
0.064
0.064
H
I
1800
7500
1800
7500
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
H
I
Note
(1)
AEC-Q101 qualified
Revision: 19-Apr-2021
Document Number: 88405
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TPSMA6.8A thru TPSMA43A
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
100
10 000
1000
100
Non-Repetitive Pulse
Waveform shown in Fig. 3
TA = 25 °C
VR measured
at Zero Bias
10
1.0
0.1
V
R measured at
Stand-Off, VWM
TJ = 25 °C
f = 1.0 MHz
sig = 50 mVp-p
0.2 x 0.2" (5.0 x 5.0 mm)
Copper Pad Areas
V
10
0.1 µs
1.0 µs
10 µs
100 µs
1.0 ms
10 ms
1
10
VBR - Breakdown Voltage (V)
100
td - Pulse Width (s)
Fig. 1 - Peak Pulse Power Rating Curve
Fig. 4 - Typical Junction Capacitance
100
75
200
TJ = TJ max.
8.3 ms Single Half Sine-Wave
100
50
50
25
10
0
0
50
100
150
200
1
5
10
50
100
TJ - Initial Temperature (°C)
Number of Cycles at 60 Hz
Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature
Fig. 5 - Maximum Non-Repetitive Peak Forward Surge Current
150
TJ = 25 °C
Pulse Width (td)
tr = 10 µs
is defined as the Point
where the Peak Current
decays to 50 % of IPPM
Peak Value
IPPM
100
50
0
Half Value -
IPPM
IPP
2
10/1000 µs Waveform
as defined by R.E.A.
td
td
1.0
3.0
4.0
0
2.0
t - Time (ms)
Fig. 3 - Pulse Waveform
Revision: 19-Apr-2021
Document Number: 88405
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TPSMA6.8A thru TPSMA43A
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
SMA (DO-214AC)
Cathode Band
Mounting Pad Layout
0.074 (1.88)
0.066 (1.68)
MAX.
MIN.
0.110 (2.79)
0.100 (2.54)
0.065 (1.65)
0.049 (1.25)
0.177 (4.50)
0.157 (3.99)
0.060 (1.52)
MIN.
0.012 (0.305)
0.006 (0.152)
0.208 (5.28)
REF.
0.090 (2.29)
0.078 (1.98)
0.060 (1.52)
0.030 (0.76)
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
Revision: 19-Apr-2021
Document Number: 88405
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Disclaimer
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Revision: 09-Jul-2021
Document Number: 91000
1
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