TPSMC20AHE3_A/I [VISHAY]
TVS DIODE 17.1V 27.7V DO214AB;
| 型号： | TPSMC20AHE3_A/I |
| 厂家： | 
VISHAY |
| 描述： | TVS DIODE 17.1V 27.7V DO214AB 局域网 光电二极管 电视 |
| 文件： | 总5页 (文件大小：91K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TPSMC6.8A thru TPSMC47A
www.vishay.com
Vishay General Semiconductor
Surface Mount PAR® Transient Voltage Suppressors
High Temperature Stability and High Reliability Conditions
FEATURES
Available
• Junction passivation optimized design
passivated anisotropic rectifier technology
• TJ = 185 °C capability suitable for high
reliability and automotive requirement
• Available in unidirectional polarity only
• 1500 W peak pulse power capability with a
10/1000 μs waveform
Available
SMC (DO-214AB)
Cathode
• Excellent clamping capability
• Very fast response time
Anode
• Low incremental surge resistance
LINKS TO ADDITIONAL RESOURCES
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
3
D
3D Models
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHE3 or P/NHM3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
VBR
6.8 V to 47 V
VWM
5.8 V to 40.2 V
1500 W
MECHANICAL DATA
PPPM
Case: SMC (DO-214AB)
IFSM
200 A
Molding compound meets UL 94 V-0 flammability rating
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
Base P/NHM3_X - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
TJ max.
Polarity
Package
185 °C
Unidirectional
SMC (DO-214AB)
(“_X” denotes revision code e.g. A, B, ...)
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
HE3 and HM3 suffix meets JESD 201 class 2 whisker test
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, automotive, and telecommunication.
Polarity: color band denotes cathode end
MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
PPPM
IPPM
VALUE
1500
UNIT
W
Peak pulse power dissipation with a 10/1000 μs waveform (fig. 3) (1)(2)
Peak power pulse current with a 10/1000 μs waveform (fig. 1) (1)
Peak forward surge current 8.3 ms single half sine-wave (2)(3)
Maximum instantaneous forward voltage at 100 A (2)(3)
Operating junction and storage temperature range
See table next page
200
A
IFSM
A
VF
3.5
V
TJ, TSTG
-65 to +185
°C
Notes
(1)
Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2
Mounted on 0.31" x 0.31" (8.0 mm x 8.0 mm) copper pads at each terminal
Measured on 8.3 ms single half sine-wave, or equivalent square wave, duty cycle = 4 pulses per minute maximum
(2)
(3)
Revision: 19-Apr-2021
Document Number: 88407
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TPSMC6.8A thru TPSMC47A
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
MAXIMUM
MAXIMUM
PEAK
MAXIMUM
TYPICAL
TEMP.
MAXIMUM
CLAMPING
VOLTAGE
AT IPPM
VC
REVERSE
LEAKAGE
AT VWM
TJ = 150 °C
ID
TEST
CURRENT
IT
STAND-OFF REVERSE
BREAKDOWN
VOLTAGE
VBR (1) AT IT
(V)
PULSE
DEVICE
DEVICETYPE MARKING
CODE
VOLTAGE
VWM
LEAKAGE
AT VWM
IR
COEFFICIENT
SURGE
(3)
OF VBR
CURRENT
(mA)
(V)
αT
(%/°C)
(2)
IPPM
(A)
(V)
(μA)
(μA)
MIN. NOM. MAX.
6.45 6.80 7.14
7.13 7.50 7.88
7.79 8.20 8.61
8.65 9.10 9.55
TPSMC6.8A
TPSMC7.5A
TPSMC8.2A
TPSMC9.1A
TPSMC10A
TPSMC11A
TPSMC12A
TPSMC13A
TPSMC15A
TPSMC16A
TPSMC18A
TPSMC20A
TPSMC22A
TPSMC24A
TPSMC27A
TPSMC30A
TPSMC33A
TPSMC36A
TPSMC39A
TPSMC43A
TPSMC47A
DEP
DGP
DKP
DMP
DPP
DRP
DTP
DVP
DXP
DZP
EEP
EGP
EKP
EMP
EPP
ERP
ETP
EVP
EXP
EZP
FEP
10
10
10
1
5.80
6.40
7.02
7.78
8.55
9.40
10.2
11.1
12.8
13.6
15.3
17.1
18.8
20.5
23.1
25.6
28.2
30.8
33.3
36.8
40.2
1000
500
200
50
10 000
5000
2000
500
200
50
143
133
10.5
11.3
12.1
13.4
14.5
15.6
16.7
18.2
21.2
22.5
25.2
27.7
30.6
33.2
37.5
41.4
45.7
49.9
53.9
59.3
64.8
0.047
0.052
0.056
0.060
0.064
0.067
0.070
0.072
0.076
0.078
0.080
0.082
0.084
0.085
0.087
0.088
0.089
0.090
0.091
0.092
0.092
124
112
9.5
10.0 10.5
1
20
103
10.5 11.0 11.6
11.4 12.0 12.6
12.4 13.0 13.7
14.3 15.0 15.8
15.2 16.0 16.8
17.1 18.0 18.9
19.0 20.0 21.0
20.9 22.0 23.1
22.8 24.0 25.2
25.7 27.0 28.4
28.5 30.0 31.5
31.4 33.0 34.7
34.2 36.0 37.8
37.1 39.0 41.0
40.9 43.0 45.2
44.7 47.0 49.4
1
5.0
2.0
2.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
96.2
89.8
82.4
70.8
66.7
59.5
54.2
49.0
45.2
40.0
36.2
32.8
30.1
27.8
25.3
23.1
1
10
1
10
1
10
1
10
1
10
1
10
1
10
1
10
1
10
1
10
1
10
1
15
1
15
1
20
1
20
Notes
(1)
(2)
(3)
(4)
VBR measured after IT applied for 300 μs, IT = square wave pulse or equivalent
Surge current waveform per fig. 3 and derated per fig. 2
To calculate VBR vs. junction temperature, use the following formula: VBR at TJ = VBR at 25 °C x (1 + αT x (TJ - 25))
All terms and symbols are consistent with ANSI/IEEE C62.35
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY
DELIVERY MODE
TPSMC6.8AHE3_B/H (1)
TPSMC6.8AHE3_B/I (1)
TPSMC6.8AHM3_B/H (1)
TPSMC6.8AHM3_B/I (1)
0.211
0.211
0.211
0.211
H
I
850
3500
850
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
H
I
3500
Note
(1)
AEC-Q101 qualified
Revision: 19-Apr-2021
Document Number: 88407
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TPSMC6.8A thru TPSMC47A
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
100
10 000
1000
100
VR, measured at
Zero Bias
TA = 25 °C
Non-Repetitive Pulse
Waveform shown in Fig. 3
10
VR measured at
Stand-Off Voltage, VWM
1.0
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
0.31 x 0.31" (8.0 x 8.0 mm)
Copper Pad Areas
10
0.1
0.1 µs
1.0 µs
10 µs
100 µs
1.0 ms
10 ms
1
10
100
td - Pulse Width (s)
VBR - Breakdown Voltage (V)
Fig. 1 - Peak Pulse Power Rating Curve
Fig. 4 - Typical Junction Capacitance
200
100
75
TJ = TJ max.
8.3 ms Single Half Sine-Wave
100
50
50
25
10
0
1
5
10
50
100
50
TJ - Initial Temperature (°C)
0
100
150
200
Number of Cycles at 60 Hz
Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature
Fig. 5 - Maximum Non-Repetitive Peak Forward Surge Current
150
TJ = 25 °C
Pulse Width (td)
tr = 10 µs
is defined as the Point
where the Peak Current
decays to 50 % of IPPM
Peak Value
IPPM
100
50
0
Half Value -
IPPM
IPP
2
10/1000 µs Waveform
as defined by R.E.A.
td
1.0
3.0
4.0
0
2.0
t - Time (ms)
Fig. 3 - Pulse Waveform
Revision: 19-Apr-2021
Document Number: 88407
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TPSMC6.8A thru TPSMC47A
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
SMC (DO-214AB)
Cathode Band
Mounting Pad Layout
0.185 (4.69) MAX.
0.246 (6.22)
0.220 (5.59)
0.126 (3.20)
0.114 (2.90)
0.126 (3.20) MIN.
0.280 (7.11)
0.260 (6.60)
0.060 (1.52) MIN.
0.320 (8.13) REF.
0.012 (0.305)
0.006 (0.152)
0.103 (2.62)
0.079 (2.06)
0.060 (1.52)
0.030 (0.76)
0.008 (0.2)
0 (0)
0.320 (8.13)
0.305 (7.75)
Revision: 19-Apr-2021
Document Number: 88407
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 09-Jul-2021
Document Number: 91000
1
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