TPSMC6.8AE3 [VISHAY]

Trans Voltage Suppressor Diode, 1500W, 5.8V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AB, LEAD FREE, PLASTIC, SMC, 2 PIN;
TPSMC6.8AE3
型号: TPSMC6.8AE3
厂家: VISHAY    VISHAY
描述:

Trans Voltage Suppressor Diode, 1500W, 5.8V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AB, LEAD FREE, PLASTIC, SMC, 2 PIN

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TPSMC6.8 thru TPSMC47A  
Vishay Semiconductors  
Surface Mount Automotive Transient Voltage Suppressors  
High Temperature Stability & High  
Reliability Conditions  
Major Ratings and Characteristics  
V(BR)  
PPPM  
IFSM  
6.8 V to 47 V  
1500 W  
200 A  
* Patent #'s  
4,980,315  
5,166,769  
5,278,094  
Tj max.  
185 °C  
DO-214AB (SMC)  
Features  
• Patented PAR construction  
• Available in Unidirectional polarity only  
• 1500 W peak pulse power capability with a  
10/1000 µs waveform  
• Excellent clamping capability  
• Very fast response time  
• Low incremental surge resistance  
Typical Applications  
®
Use in sensitive electronics protection against voltage  
transients induced by inductive load switching and  
lighting on ICs, MOSFET, signal lines of sensor units  
for consumer, computer, industrial, automotive, and  
Telecommunication  
Mechanical Data  
Case: DO-214AB (SMC)  
Epoxy meets UL-94V-0 Flammability rating  
Terminals: Matte tin plated leads, solderable per  
J-STD-002B and JESD22-B102D  
• Typical I less than 1.0 µA above 15 V rating  
• Meets MSL level 1, per J-STD-020C  
• Solder Dip 260 °C, 40 seconds  
D
E3 suffix for commercial grade, HE3 suffix for high  
reliability grade (AEC Q101 qualified)  
Polarity: Color band denotes cathode end  
Maximum Ratings  
(TA = 25 °C, unless otherwise noted)  
Parameter  
Symbol  
PPPM  
Value  
Unit  
W
Peak pulse power dissipation with a 10/1000 µs waveform(1)(2) (Fig. 3)  
Peak power pulse current with a 10/1000 µs waveform(1) (Fig. 1)  
Peak forward surge current 8.3 ms single half sine-wave(2)  
Minimum 1500  
IPPM  
IFSM  
See Next Table  
200  
A
A
Maximum instantaneous forward voltage at 100 A(2)  
Operating junction and storage temperature range  
VF  
3.5  
V
TJ, TSTG  
- 65 to + 185  
°C  
Notes:  
(1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25 °C per Fig. 2  
(2) Measured on 8.3 ms single half sine-wave, or equivalent square wave, duty cycle = 4 pulses per minute maximum  
Document Number 88407  
15-Aug-05  
www.vishay.com  
1
TPSMC6.8 thru TPSMC47A  
Vishay Semiconductors  
Electrical Characteristics  
(TA = 25 °C unless otherwise noted)  
Maximum  
Reverse  
Leakage  
at VWM  
TJ = 150 °C Maximum. Maximum  
Peak  
Pulse  
Surge  
Clamping  
Voltage  
at  
Maximum  
Reverse  
Leakage  
at VWM  
Breakdown Voltage  
Test  
Current  
IT  
Stand-off  
Voltage  
VWM  
(1)  
Device  
Marking  
Code  
V(BR) at IT  
Current  
IPPM  
IR  
(V)  
(2) (A)  
Device Type  
(mA)  
(V)  
VC (V)  
IPPM  
(µA)  
ID (µA)  
Min  
6.12  
6.45  
6.75  
7.13  
7.38  
7.79  
8.19  
8.65  
9.00  
9.50  
9.90  
10.5  
10.8  
11.4  
11.7  
12.4  
13.5  
14.3  
14.4  
15.2  
16.2  
17.1  
18.0  
19.0  
19.8  
20.9  
21.6  
22.8  
24.3  
25.7  
27.0  
28.5  
29.7  
31.4  
32.4  
34.2  
35.1  
37.1  
38.7  
40.9  
42.3  
44.7  
Max  
7.48  
7.14  
8.25  
7.88  
9.02  
8.61  
10.0  
9.55  
11.0  
10.5  
12.1  
11.6  
13.2  
12.6  
14.3  
13.7  
16.5  
15.8  
17.6  
16.8  
19.8  
18.9  
22.0  
21.0  
24.2  
23.1  
26.4  
25.2  
29.7  
28.4  
33.0  
31.5  
36.3  
34.7  
39.6  
37.8  
42.9  
41.0  
47.3  
45.2  
51.7  
49.4  
TPSMC6.8  
TPSMC6.8A  
TPSMC7.5  
TPSMC7.5A  
TPSMC8.2  
TPSMC8.2A  
TPSMC9.1  
TPSMC9.1A  
TPSMC10  
TPSMC10A  
TPSMC11  
TPSMC11A  
TPSMC12  
TPSMC12A  
TPSMC13  
TPSMC13A  
TPSMC15  
TPSMC15A  
TPSMC16  
TPSMC16A  
TPSMC18  
TPSMC18A  
TPSMC20  
TPSMC20A  
TPSMC22  
TPSMC22A  
TPSMC24  
TPSMC24A  
TPSMC27  
TPSMC27A  
TPSMC30  
TPSMC30A  
TPSMC33  
TPSMC33A  
TPSMC36  
TPSMC36A  
TPSMC39  
TPMSC39A  
TPSMC43  
TPSMC43A  
TPSMC47  
TPSMC47A  
DDP  
DEP  
DFP  
DGP  
DHP  
DKP  
DLP  
DMP  
DNP  
DPP  
DQP  
DRP  
DSP  
DTP  
DUP  
DVP  
DWP  
DXP  
DYP  
DZP  
EDP  
EEP  
EFP  
EGP  
EHP  
EKP  
ELP  
EMP  
ENP  
EPP  
EQP  
ERP  
ESP  
ETP  
EUP  
EVP  
EWP  
EXP  
EYP  
EZP  
FDP  
FEP  
10.0  
10.0  
10.0  
10.0  
10.0  
10.0  
1.0  
1.0  
1.0  
1.0  
1.0  
1.0  
1.0  
1.0  
1.0  
1.0  
1.0  
1.0  
1.0  
1.0  
1.0  
1.0  
1.0  
1.0  
1.0  
1.0  
1.0  
1.0  
1.0  
1.0  
1.0  
1.0  
1.0  
1.0  
1.0  
1.0  
1.0  
1.0  
1.0  
1.0  
1.0  
1.0  
5.50  
5.80  
6.05  
6.40  
6.63  
7.02  
7.37  
7.78  
8.10  
8.55  
8.92  
9.40  
9.72  
10.2  
10.5  
11.1  
12.1  
12.8  
12.9  
13.6  
14.5  
15.3  
16.2  
17.1  
17.8  
18.8  
19.4  
20.5  
21.8  
23.1  
24.3  
25.6  
26.8  
28.2  
29.1  
30.8  
31.6  
33.3  
34.8  
36.8  
38.1  
40.2  
1000  
1000  
500  
500  
200  
200  
50  
10000  
10000  
5000  
5000  
2000  
2000  
500  
500  
200  
200  
50  
139.0  
143.0  
128.0  
133.0  
120.0  
124.0  
109.0  
112.0  
100.0  
103.0  
92.6  
96.2  
86.7  
89.8  
78.9  
82.4  
68.2  
70.8  
63.8  
66.7  
56.6  
59.5  
51.5  
54.2  
47.0  
49.0  
43.2  
45.2  
38.4  
40.0  
34.5  
36.2  
31.4  
32.8  
28.8  
30.1  
26.6  
27.8  
24.2  
25.3  
22.1  
23.1  
10.8  
10.5  
11.7  
11.3  
12.5  
12.1  
13.8  
13.4  
15.0  
14.5  
16.2  
15.6  
17.3  
16.7  
19.0  
18.2  
22.0  
21.2  
23.5  
22.5  
26.5  
25.2  
29.1  
27.7  
31.9  
30.6  
34.7  
33.2  
39.1  
37.5  
43.5  
41.4  
47.7  
45.7  
52.0  
49.9  
56.4  
53.9  
61.9  
59.3  
67.8  
64.8  
50  
20  
20  
5.0  
5.0  
2.0  
2.0  
2.0  
2.0  
1.0  
1.0  
1.0  
1.0  
1.0  
1.0  
1.0  
1.0  
1.0  
1.0  
1.0  
1.0  
1.0  
1.0  
1.0  
1.0  
1.0  
1.0  
1.0  
1.0  
1.0  
1.0  
1.0  
1.0  
1.0  
1.0  
50  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
20  
20  
Notes:  
(1) V(BR) measured after IT applied for 300 µs, IT = square wave pulse or equivalent  
(2) Surge current waveform per Fig. 3 and derated per Fig. 2  
(3) All terms and symbols are consistent with ANSI/IEEE C62.35  
www.vishay.com  
2
Document Number 88407  
15-Aug-05  
TPSMC6.8 thru TPSMC47A  
Vishay Semiconductors  
Ratings and Characteristics Curves  
(TA = 25 °C unless otherwise specified)  
100  
20000  
Non-repetitive Pulse  
TJ = 25 °C  
f = 1.0 MHz  
Vsig = 50mVp-p  
Waveform shown in Fig. 3  
TA = 25 °C  
10000  
1000  
100  
Measured at  
Zero Bias  
10  
1
Measured at  
Stand-Off  
Voltage, VWM  
0.1  
1.0  
10  
(BR) - Breakdown Voltage (V)  
100  
200  
0.1 µs 1.0 µs  
10 µs  
100 µs  
1.0 ms  
10 ms  
V
td - Pulse Width (sec.)  
Figure 1. Peak Pulse Power Rating Curve  
Figure 4. Typical Junction Capacitance  
100  
200  
TJ = TJ max.  
8.3 ms Single Half Sine-Wave  
100  
50  
75  
50  
25  
0
10  
25  
50  
75  
150  
175  
200  
0
100  
125  
1
5
10  
50  
100  
TJ  
- Initial Temperature (°C)  
Number of Cycles at 60 Hz  
Figure 2. Pulse Power or Current versus Initial Junction  
Temperature  
Figure 5. Maximum Non-Repetitive/Peak Forward Surge Current  
150  
TJ = 25 °C  
Pulse Width (td)  
tr = 10 µsec.  
is defined as the point  
where the peak current  
decays to 50 % of IPPM  
Peak Value  
IPPM  
100  
Half Value — IPP  
IPPM  
2
50  
0
10/1000 µsec. Waveform  
as defined by R.E.A.  
td  
1.0  
3.0  
4.0  
0
2.0  
t - Time (ms)  
Figure 3. Pulse Waveform  
Document Number 88407  
15-Aug-05  
www.vishay.com  
3
TPSMC6.8 thru TPSMC47A  
Vishay Semiconductors  
Package outline dimensions in inches (millimeters)  
DO-214AB (SMC)  
Mounting Pad Layout  
Cathode Band  
0.185 MAX.  
(4.69 MAX.)  
0.126 (3.20)  
0.114 (2.90)  
0.246 (6.22)  
0.220 (5.59)  
0.126 MIN.  
(3.20 MIN.)  
0.280 (7.11)  
0.060 MIN.  
(1.52 MIN.)  
0.260 (6.60)  
0.012 (0.305)  
0.006 (0.152)  
0.320 REF  
0.103 (2.62)  
0.079 (2.06)  
0.060 (1.52)  
0.030 (0.76)  
0.008 (0.2)  
0 (0)  
0.320 (8.13)  
0.305 (7.75)  
www.vishay.com  
4
Document Number 88407  
15-Aug-05  

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