TPSMC7.5/9 [VISHAY]
Trans Voltage Suppressor Diode, 6.05V V(RWM), Unidirectional,;型号: | TPSMC7.5/9 |
厂家: | VISHAY |
描述: | Trans Voltage Suppressor Diode, 6.05V V(RWM), Unidirectional, 二极管 瞬态抑制器 |
文件: | 总3页 (文件大小:30K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
TPSMC6.8 thru TPSMC43A
Vishay Semiconductors
formerly General Semiconductor
Automotive Surface Mount
Transient Voltage Suppressors
DO-214AB (SMC)
Breakdown Voltage 6.8 to 43V
Peak Pulse Power 1500W
Cathode Band
Mounting Pad Layout
0.126 (3.20)
0.114 (2.90)
0.245 (6.22)
0.220 (5.59)
0.185 MAX.
(4.69 MAX.)
0.121 MIN.
(3.07 MIN.)
Dimensions in inches
and (millimeters)
0.280 (7.11)
0.260 (6.60)
0.060 MIN.
(1.52 MIN.)
0.012 (0.305)
0.006 (0.152)
0.320 REF
0.103 (2.62)
0.079 (2.06)
*Patent #’s
4,980,315
5,166,769
5,278,094
Features
• Designed for under the hood surface mount
applications
0.060 (1.52)
0.030 (0.76)
0.008
(0.203)
Max.
0.320 (8.13)
0.305 (7.75)
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
• Easy pick and place
Available in uni-directional only
• Low profile package
• Built-in strain relief
Mechanical Data
• Ideal for automated placement
• Exclusive patented PAR® oxide passivated
chip construction
• 1500W peak pulse power capability with
a 10/1000ms waveform, repetition rate
(duty cycle): 0.01%
• Excellent clamping capability
• Low incremental surge resistance
• Very fast response time
Case: JEDEC DO-214AB molded plastic body over
passivated junction
Terminals: Solder plated, solderable per
MIL-STD-750, Method 2026
Polarity: The color band denotes the cathode,
which is positive with respect to the anode under
normal TVS operation
Mounting Position: Any
Weight: 0.007 oz., 0.2 g
• For devices with V
≥ 10V I are typically
D
(BR)
Packaging codes/options:
less than 1.0mA at T = 150°C
A
9/3.5K per 13" Reel (16mm tape), 30K/box
7/850 EA per 7" Reel (16mm tape), 27K/box
• High temperature soldering:
250°C/10 seconds at terminals
Maximum Ratings and Thermal Characteristics(TA = 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
Peak pulse power dissipation with a 10/1000µs
PPPM
Minimum 1500
W
waveform(1)(2)(Fig. 3)
Peak power pulse current with a 10/1000µs
IPPM
See Next Table
A
waveform(1) (Fig. 1)
Peak forward surge current 8.3ms single half sine-wave(2)(3)
Maximum instantaneous forward voltage at 100A(3)
Operating junction and storage temperature range
IFSM
VF
200
3.5
A
V
TJ, TSTG
–65 to +185
°C
Notes: (1) Non-repetitive current pulse, per Fig.3 and derated above TA = 25°C per Fig. 2
(2) Mounted on 0.31 x 0.31” (8.0 x 8.0mm) copper pads to each terminal
(3) Measured on 8.3ms single half sine-wave, or equivalent square wave, duty cycle = 4 pulses per minute maximum
Document Number 88407
06-May-02
www.vishay.com
1
TPSMC6.8 thru TPSMC43A
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics(TA = 25°C unless otherwise noted)
T
J
= 150°C Maximum
Breakdown Voltage
Maximum Maximum Peak Pulse Maximum
V
(BR)
(1) at I
Reverse
Leakage
Reverse
Leakage
Surge
Clamping
Voltage
T
Device
Marking
Code
(V)
Test
Current
Stand-off
Voltage
Current
(2)
at V
at V
I
at I
PPM
WM
WM
PPM
Device
Min.
Max.
I (mA)
T
V
(V)
I
(µA)
I (µA)
D
(A)
Vc (V)
WM
R
TPSMC6.8
TPSMC6.8A
TPSMC7.5
TPSMC7.5A
TPSMC8.2
TPSMC8.2A
TPSMC9.1
TPSMC9.1A
TPSMC10
TPSMC10A
TPSMC11
TPSMC11A
TPSMC12
TPSMC12A
TPSMC13
TPSMC13A
TPSMC15
TPSMC15A
TPSMC16
TPSMC16A
TPSMC18
TPSMC18A
TPSMC20
TPSMC20A
TPSMC22
TPSMC22A
TPSMC24
TPSMC24A
TPSMC27
TPSMC27A
TPSMC30
TPSMC30A
TPSMC33
TPSMC33A
TPSMC36
TPSMC36A
TPSMC39
TPMSC39A
TPSMC43
TPSMC43A
DDP
DEP
DFP
DGP
DHP
DKP
DLP
DMP
DNP
DPP
DQP
DRP
DSP
DTP
DUP
DVP
DWP
DXP
DYP
DZP
EDP
EEP
EFP
EGP
EHP
EKP
ELP
EMP
ENP
EPP
EQP
ERP
ESP
ETP
EUP
EVP
EWP
EXP
EYP
EZP
6.12
6.45
6.75
7.13
7.38
7.79
8.19
8.65
9.00
9.50
9.90
10.5
10.8
11.4
11.7
12.4
13.5
14.3
14.4
15.2
16.2
17.1
18.0
19.0
19.8
20.9
21.6
22.8
24.3
25.7
27.0
28.5
29.7
31.4
32.4
34.2
35.1
37.1
38.7
40.9
7.48
7.14
8.25
7.88
9.02
8.61
10.0
9.55
11.0
10.5
12.1
11.6
13.2
12.6
14.3
13.7
16.5
15.8
17.6
16.8
19.8
18.9
22.0
21.0
24.2
23.1
26.4
25.2
29.7
28.4
33.0
31.5
36.3
34.7
39.6
37.8
42.9
41.0
47.3
45.2
10.0
10.0
10.0
10.0
10.0
10.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
5.50
5.80
6.05
6.40
6.63
7.02
7.37
7.78
8.10
8.55
8.92
9.40
9.72
10.2
10.5
11.1
12.1
12.8
12.9
13.6
14.5
15.3
16.2
17.1
17.8
18.8
19.4
20.5
21.8
23.1
24.3
25.6
26.8
28.2
29.1
30.8
31.6
33.3
34.8
36.8
1000
1000
500
500
200
200
50
50
20
20
10000
10000
5000
5000
2000
2000
500
500
200
200
50
50
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
139.0
143.0
128.0
133.0
120.0
124.0
109.0
112.0
100.0
103.0
92.6
96.2
86.7
89.8
78.9
82.4
68.2
70.8
63.8
66.7
56.6
59.5
51.5
54.2
47.0
49.0
43.2
45.2
38.4
40.0
34.5
36.2
31.4
32.8
28.8
30.1
26.6
27.8
24.2
25.3
10.8
10.5
11.7
11.3
12.5
12.1
13.8
13.4
15.0
14.5
16.2
15.6
17.3
16.7
19.0
18.2
22.0
21.2
23.5
22.5
26.5
25.2
29.1
27.7
31.9
30.6
34.7
33.2
39.1
37.5
43.5
41.4
47.7
45.7
52.0
49.9
56.4
53.9
61.9
59.3
5.0
5.0
2.0
2.0
2.0
2.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
10
10
10
10
10
Notes:
(1) V(BR) measured after IT applied for 300µs, IT = square wave pulse or equivalent
(2) Surge current waveform per Fig. 3 and derate per Fig. 2
(3) All terms and symbols are consistent with ANSI/IEEE C62.35
www.vishay.com
2
Document Number 88407
06-May-02
TPSMC6.8 thru TPSMC43A
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Fig.1 – Peak Pulse Power Rating Curve
Fig. 2 – Pulse Derating Curve
100
100
75
TA = 25°C
Non-repetitive pulse
waveform shown in Fig. 3
10
50
25
0
1.0
0.31 x 0.31" (8.0 x 8.0mm)
copper pad areas
0.1
0.1µs
50
150
200
1.0µs
10µs
100µs
1.0ms
10ms
0
100
td, Pulse Width, sec.
TA, Ambient Temperature (°C)
Fig. 4 – Typical Junction Capacitance
Fig. 3 – Pulse Waveform
10,000
1,000
100
150
TJ = 25°C
Pulse Width (td)
TJ = 25°C
f = 1 MHz
Vsig = 50mVp-p
tr = 10µsec.
is defined as the point
Peak Value
IPPM
where the peak current
decays to 50% of IPPM
VR measured
at zero bias
100
50
0
Half Value — IPP
IPPM
2
10/1000µsec. Waveform
as defined by R.E.A.
VR measured
at stand-off
voltage, VWM
td
10
1.0
3.0
4.0
0
2.0
1
10
100
200
V(BR), Breakdown Voltage (V)
t — Time (ms)
Fig. 5 – Maximum Non-Repetitive
Peak Forward Surge Current
200
TJ = TJ max
8.3ms single half sine-wave
(JEDEC method)
100
50
10
1
5
10
50
100
Number of Cycles at 60 Hz
Document Number 88407
06-May-02
www.vishay.com
3
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