TSDF1205RW-GS08 [VISHAY]

Transistor;
TSDF1205RW-GS08
型号: TSDF1205RW-GS08
厂家: VISHAY    VISHAY
描述:

Transistor

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中文:  中文翻译
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Not for new design, this product will be obsoleted soon  
TSDF1205 / 1205R / 1205W / 1205RW  
Vishay Semiconductors  
12 GHz Silicon NPN Planar RF Transistor  
2
1
SOT143  
Features  
• Low power applications  
• Very low noise figure  
3
4
2
e3  
1
• High transition frequency f = 12 GHz  
SOT143R  
T
• Lead (Pb)-free component  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
4
3
1
2
SOT343  
Applications  
For low noise and small signal low power amplifiers.  
This transistor has superior noise figure and associ-  
ated gain performance at UHF, VHF and microwave  
frequencies.  
3
4
1
2
SOT343R  
4
3
Mechanical Data  
Typ:TSDF1205  
13629  
Electrostatic sensitive device.  
Observe precautions for handling.  
Case: SOT143 Plastic case  
Weight: approx. 8.0 mg  
Pinning: 1 = Collector, 2 = Emitter,  
3 = Base, 4 = Emitter  
Typ: TDSF1205W  
Case: SOT343 Plastic case  
Weight: approx. 6.0 mg  
Pinning: 1 = Collector, 2 = Emitter,  
3 = Base, 4 = Emitter  
Typ: TSDF1205R  
Case: SOT143R Plastic case  
Weight: approx. 8.0 mg  
Pinning: 1 = Collector, 2 = Emitter,  
3 = Base, 4 = Emitter  
Typ: TSDF1205RW  
Case: SOT343R Plastic case  
Weight: approx. 8.0 mg  
Pinning: 1 = Collector, 2 = Emitter,  
3 = Base, 4 = Emitter  
Parts Table  
Part  
Ordering Code  
TSDF1205-GS08  
Type Marking  
Remarks  
TSDF1205  
F05  
Tape and Reel  
Tape and Reel  
Tape and Reel  
Tape and Reel  
TSDF1205R  
TSDF1205R-GS08  
TSDF1205RW-GS08  
TSDF1205W-GS08  
05F  
TSDF1205RW  
TSDF1205W  
W0F  
WF0  
Document Number 85065  
Rev. 1.7, 08-Sep-08  
www.vishay.com  
1
TSDF1205 / 1205R / 1205W / 1205RW  
Vishay Semiconductors  
Absolute Maximum Ratings  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Test condition  
Symbol  
VCBO  
Value  
9
Unit  
V
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
VCEO  
VEBO  
IC  
4
V
V
2
12  
40  
mA  
mW  
°C  
°C  
Total power dissipation  
Junction temperature  
Storage temperature range  
Tamb 132 °C  
Ptot  
Tj  
150  
Tstg  
- 65 to + 150  
Maximum Thermal Resistance  
Parameter  
Test condition  
Symbol  
RthJA  
Value  
450  
Unit  
K/W  
1)  
Junction to ambient air  
1) on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35 µm Cu  
Electrical DC Characteristics  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Test condition  
Symbol  
ICES  
ICBO  
Min  
Typ.  
Max  
100  
Unit  
µA  
Collector-emitter cut-off current VCE = 12 V, VBE = 0  
Collector-base cut-off current  
Emitter-base cut-off current  
V
V
CB = 10 V, IE = 0  
EB = 1 V, IC = 0  
100  
2
nA  
µA  
V
IEBO  
Collector-emitter breakdown  
voltage  
I
C = 1 mA, IB = 0  
V(BR)CEO  
4
Collector-emitter saturation  
voltage  
IC = 5 mA, IB = 0.5 mA  
VCEsat  
hFE  
0.1  
0.5  
V
DC forward current transfer ratio VCE = 2 V, IC = 2 mA  
50  
120  
250  
www.vishay.com  
2
Document Number 85065  
Rev. 1.7, 08-Sep-08  
TSDF1205 / 1205R / 1205W / 1205RW  
Vishay Semiconductors  
Electrical AC Characteristics  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Test condition  
Symbol  
fT  
Min  
Typ.  
12  
Max  
Unit  
Transition frequency  
VCE = 2 V, IC = 5 mA, f = 1 GHz  
GHz  
Collector-base capacitance  
Collector-emitter capacitance  
Emitter-base capacitance  
Noise figure  
V
V
V
V
CB = 1 V, f = 1 MHz  
Ccb  
Cce  
Ceb  
F
0.2  
0.35  
0.15  
1.3  
pF  
pF  
pF  
dB  
CE = 1 V, f = 1 MHz  
EB = 0.5 V, f = 1 MHz  
CE = 2 V, IC = 2 mA, ZS = ZSopt  
,
ZL = 50 Ω, f = 2 GHz  
CE = 2 V, IC = 2 mA, f = 2 GHz  
(at Fopt  
Power gain  
V
Gpe  
Gpe  
2
13  
dB  
dB  
dB  
)
VCE = 2 V, IC = 5 mA, ZS = ZSopt  
,
11.5  
12.5  
ZL = 50 Ω f = 2 GHz  
Transducer gain  
V
CE = 2 V, IC = 5 mA, Z0 = 50 Ω,  
|S21e  
|
f = 2 GHz  
Typical Characteristics  
Tamb = 25 °C, unless otherwise specified  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
100  
80  
60  
40  
20  
0
0
20 40 60 80 100 120 140 160  
- Ambient Temperature (°C)  
0
1
2
3
4
5
14284  
14286  
V
- Collector Base Voltage (V)  
CB  
T
amb  
Figure 1. Total Power Dissipation vs. Ambient Temperature  
Figure 3. Collector Base Capacitance vs. Collector Base Voltage  
3.0  
16  
f =1 GHz  
V
= 2 V  
CE  
14  
f = 2 GHz  
Z
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
= 50 Ω  
S
12  
10  
8
V
= 3 V  
CE  
V
= 2 V  
CE  
6
4
2
0
0
2
4
6
8
10  
12  
14  
0
1
2
3
4
5
6
14287  
I - Collector Current (mA)  
C
14285  
I - Collector Current (mA)  
C
Figure 2. Transition Frequency vs. Collector Current  
Figure 4. Noise Figure vs. Collector Current  
Document Number 85065  
Rev. 1.7, 08-Sep-08  
www.vishay.com  
3
TSDF1205 / 1205R / 1205W / 1205RW  
Vishay Semiconductors  
Package Dimensions in mm (Inches): SOT143  
3 [0.118]  
2.8 [0.110]  
0.5 [0.020]  
0.5 [0.020]  
0.35 [0.014]  
2.6 [0.102]  
0.35 [0.014]  
2.35 [0.093]  
1.8 [0.071]  
1.6 [0.063]  
0.5 [0.020]  
0.9 [0.035]  
0.75 [0.030]  
0.35 [0.014]  
foot print recommendation:  
1.7 [0.067]  
1.2 [0.047]  
0.8 [0.031]  
2 [0.079]  
1.8 [0.071]  
0.8 [0.031]  
0.8 [0.031]  
96 12240  
1.9 [0.075]  
Package Dimensions in mm (Inches): SOT143R  
96 12239  
www.vishay.com  
4
Document Number 85065  
Rev. 1.7, 08-Sep-08  
TSDF1205 / 1205R / 1205W / 1205RW  
Vishay Semiconductors  
Package Dimensions in mm (Inches): SOT343  
2.2 [0.087]  
1.8 [0.071]  
0.4 [0.016]  
0.4 [0.016]  
0.15 [0.006] min.  
0.25 [0.010]  
0.25 [0.010]  
2.2 [0.087]  
2 [0.079]  
1.25 [0.049]  
1.05 [0.041]  
foot print recommendation:  
0.7 [0.028]  
0.4 [0.016]  
0.25 [0.010]  
0.55 [0.022]  
1.15 [0.045]  
0.09 [0.035]  
0.6 [0.024]  
1.4 [0.055]  
1.2 [0.047]  
1.3 [0.051]  
9612237  
Package Dimensions in mm (Inches): SOT343R  
96 12238  
Document Number 85065  
Rev. 1.7, 08-Sep-08  
www.vishay.com  
5
TSDF1205 / 1205R / 1205W / 1205RW  
Vishay Semiconductors  
Ozone Depleting Substances Policy Statement  
It is the policy of Vishay Semiconductor GmbH to  
1. Meet all present and future national and international statutory requirements.  
2. Regularly and continuously improve the performance of our products, processes, distribution and operating  
systems with respect to their impact on the health and safety of our employees and the public, as well as  
their impact on the environment.  
It is particular concern to control or eliminate releases of those substances into the atmosphere which are  
known as ozone depleting substances (ODSs).  
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs  
and forbid their use within the next ten years. Various national and international initiatives are pressing for an  
earlier ban on these substances.  
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use  
of ODSs listed in the following documents.  
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments  
respectively  
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental  
Protection Agency (EPA) in the USA  
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.  
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting  
substances and do not contain such substances.  
We reserve the right to make changes to improve technical design  
and may do so without further notice.  
Parameters can vary in different applications. All operating parameters must be validated for each  
customer application by the customer. Should the buyer use Vishay Semiconductors products for any  
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all  
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal  
damage, injury or death associated with such unintended or unauthorized use.  
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany  
www.vishay.com  
6
Document Number 85065  
Rev. 1.7, 08-Sep-08  
Legal Disclaimer Notice  
Vishay  
Disclaimer  
All product specifications and data are subject to change without notice.  
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf  
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein  
or in any other disclosure relating to any product.  
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any  
information provided herein to the maximum extent permitted by law. The product specifications do not expand or  
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed  
therein, which apply to these products.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this  
document or by any conduct of Vishay.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless  
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such  
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting  
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding  
products designed for such applications.  
Product names and markings noted herein may be trademarks of their respective owners.  
Document Number: 91000  
Revision: 18-Jul-08  
www.vishay.com  
1

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