TSDF1205RW-GS08 [VISHAY]
Transistor;Not for new design, this product will be obsoleted soon
TSDF1205 / 1205R / 1205W / 1205RW
Vishay Semiconductors
12 GHz Silicon NPN Planar RF Transistor
2
1
SOT143
Features
• Low power applications
• Very low noise figure
3
4
2
e3
1
• High transition frequency f = 12 GHz
SOT143R
T
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
4
3
1
2
SOT343
Applications
For low noise and small signal low power amplifiers.
This transistor has superior noise figure and associ-
ated gain performance at UHF, VHF and microwave
frequencies.
3
4
1
2
SOT343R
4
3
Mechanical Data
Typ:TSDF1205
13629
Electrostatic sensitive device.
Observe precautions for handling.
Case: SOT143 Plastic case
Weight: approx. 8.0 mg
Pinning: 1 = Collector, 2 = Emitter,
3 = Base, 4 = Emitter
Typ: TDSF1205W
Case: SOT343 Plastic case
Weight: approx. 6.0 mg
Pinning: 1 = Collector, 2 = Emitter,
3 = Base, 4 = Emitter
Typ: TSDF1205R
Case: SOT143R Plastic case
Weight: approx. 8.0 mg
Pinning: 1 = Collector, 2 = Emitter,
3 = Base, 4 = Emitter
Typ: TSDF1205RW
Case: SOT343R Plastic case
Weight: approx. 8.0 mg
Pinning: 1 = Collector, 2 = Emitter,
3 = Base, 4 = Emitter
Parts Table
Part
Ordering Code
TSDF1205-GS08
Type Marking
Remarks
TSDF1205
F05
Tape and Reel
Tape and Reel
Tape and Reel
Tape and Reel
TSDF1205R
TSDF1205R-GS08
TSDF1205RW-GS08
TSDF1205W-GS08
05F
TSDF1205RW
TSDF1205W
W0F
WF0
Document Number 85065
Rev. 1.7, 08-Sep-08
www.vishay.com
1
TSDF1205 / 1205R / 1205W / 1205RW
Vishay Semiconductors
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
VCBO
Value
9
Unit
V
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
VCEO
VEBO
IC
4
V
V
2
12
40
mA
mW
°C
°C
Total power dissipation
Junction temperature
Storage temperature range
Tamb ≤ 132 °C
Ptot
Tj
150
Tstg
- 65 to + 150
Maximum Thermal Resistance
Parameter
Test condition
Symbol
RthJA
Value
450
Unit
K/W
1)
Junction to ambient air
1) on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35 µm Cu
Electrical DC Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
ICES
ICBO
Min
Typ.
Max
100
Unit
µA
Collector-emitter cut-off current VCE = 12 V, VBE = 0
Collector-base cut-off current
Emitter-base cut-off current
V
V
CB = 10 V, IE = 0
EB = 1 V, IC = 0
100
2
nA
µA
V
IEBO
Collector-emitter breakdown
voltage
I
C = 1 mA, IB = 0
V(BR)CEO
4
Collector-emitter saturation
voltage
IC = 5 mA, IB = 0.5 mA
VCEsat
hFE
0.1
0.5
V
DC forward current transfer ratio VCE = 2 V, IC = 2 mA
50
120
250
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2
Document Number 85065
Rev. 1.7, 08-Sep-08
TSDF1205 / 1205R / 1205W / 1205RW
Vishay Semiconductors
Electrical AC Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
fT
Min
Typ.
12
Max
Unit
Transition frequency
VCE = 2 V, IC = 5 mA, f = 1 GHz
GHz
Collector-base capacitance
Collector-emitter capacitance
Emitter-base capacitance
Noise figure
V
V
V
V
CB = 1 V, f = 1 MHz
Ccb
Cce
Ceb
F
0.2
0.35
0.15
1.3
pF
pF
pF
dB
CE = 1 V, f = 1 MHz
EB = 0.5 V, f = 1 MHz
CE = 2 V, IC = 2 mA, ZS = ZSopt
,
ZL = 50 Ω, f = 2 GHz
CE = 2 V, IC = 2 mA, f = 2 GHz
(at Fopt
Power gain
V
Gpe
Gpe
2
13
dB
dB
dB
)
VCE = 2 V, IC = 5 mA, ZS = ZSopt
,
11.5
12.5
ZL = 50 Ω f = 2 GHz
Transducer gain
V
CE = 2 V, IC = 5 mA, Z0 = 50 Ω,
|S21e
|
f = 2 GHz
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
0.5
0.4
0.3
0.2
0.1
0.0
100
80
60
40
20
0
0
20 40 60 80 100 120 140 160
- Ambient Temperature (°C)
0
1
2
3
4
5
14284
14286
V
- Collector Base Voltage (V)
CB
T
amb
Figure 1. Total Power Dissipation vs. Ambient Temperature
Figure 3. Collector Base Capacitance vs. Collector Base Voltage
3.0
16
f =1 GHz
V
= 2 V
CE
14
f = 2 GHz
Z
2.5
2.0
1.5
1.0
0.5
0.0
= 50 Ω
S
12
10
8
V
= 3 V
CE
V
= 2 V
CE
6
4
2
0
0
2
4
6
8
10
12
14
0
1
2
3
4
5
6
14287
I - Collector Current (mA)
C
14285
I - Collector Current (mA)
C
Figure 2. Transition Frequency vs. Collector Current
Figure 4. Noise Figure vs. Collector Current
Document Number 85065
Rev. 1.7, 08-Sep-08
www.vishay.com
3
TSDF1205 / 1205R / 1205W / 1205RW
Vishay Semiconductors
Package Dimensions in mm (Inches): SOT143
3 [0.118]
2.8 [0.110]
0.5 [0.020]
0.5 [0.020]
0.35 [0.014]
2.6 [0.102]
0.35 [0.014]
2.35 [0.093]
1.8 [0.071]
1.6 [0.063]
0.5 [0.020]
0.9 [0.035]
0.75 [0.030]
0.35 [0.014]
foot print recommendation:
1.7 [0.067]
1.2 [0.047]
0.8 [0.031]
2 [0.079]
1.8 [0.071]
0.8 [0.031]
0.8 [0.031]
96 12240
1.9 [0.075]
Package Dimensions in mm (Inches): SOT143R
96 12239
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4
Document Number 85065
Rev. 1.7, 08-Sep-08
TSDF1205 / 1205R / 1205W / 1205RW
Vishay Semiconductors
Package Dimensions in mm (Inches): SOT343
2.2 [0.087]
1.8 [0.071]
0.4 [0.016]
0.4 [0.016]
0.15 [0.006] min.
0.25 [0.010]
0.25 [0.010]
2.2 [0.087]
2 [0.079]
1.25 [0.049]
1.05 [0.041]
foot print recommendation:
0.7 [0.028]
0.4 [0.016]
0.25 [0.010]
0.55 [0.022]
1.15 [0.045]
0.09 [0.035]
0.6 [0.024]
1.4 [0.055]
1.2 [0.047]
1.3 [0.051]
9612237
Package Dimensions in mm (Inches): SOT343R
96 12238
Document Number 85065
Rev. 1.7, 08-Sep-08
www.vishay.com
5
TSDF1205 / 1205R / 1205W / 1205RW
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
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6
Document Number 85065
Rev. 1.7, 08-Sep-08
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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