TSDF52830YS_08 [VISHAY]
Dual - MOSMIC®- two AGC Amplifiers for TV-Tuner Prestage with Integrated Band Switch for One-Line Switching; 双 - MOSMIC®- 2 AGC放大器，用于电视调谐器预安排，集成带开关的单线开关
| 型号： | TSDF52830YS_08 |
| 厂家： | 
VISHAY |
| 描述： | Dual - MOSMIC®- two AGC Amplifiers for TV-Tuner Prestage with Integrated Band Switch for One-Line Switching |
| 文件： | 总8页 (文件大小：165K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Not for new design, this product will be obsoleTtedSsDooFn52830YS
Vishay Semiconductors
®
Dual - MOSMIC - two AGC Amplifiers for TV-Tuner Prestage
with Integrated Band Switch for One-Line Switching
6
5
4
Comments
MOSMIC - MOS Monolithic Integrated Circuit
VY
WN5
CW
Description
The Dual-MOSMIC TSDF52830YS, assembled in
the well-known SOT-363 plastic package, is a combi-
nation of two different MOSMIC amplifiers with com-
®
1
2
3
®
19024
mon Source and common Gate 2 leads and an
integrated switch. One of the MOSMIC stages is opti-
mized for use in VHF applications, especially regard-
ing cross modulation performance and noise figure at
lower VHF frequencies, whereas the other stage is
Electrostatic sensitive device.
Observe precautions for handling
optimized for use in UHF applications regarding gain
and noise figure performance at higher frequencies of
UHF range. The integrated switch is operated by the
Gate 1 bias of the UHF amplifier on Pin 1. All of the
Gates are protected against excessive input voltage
surges by integrated antiserial diodes between them-
selves and Source.
Applications
Low noise gain controlled VHF and UHF input stages
with 5 V supply voltage, such as in digital and analog
TV tuners and in other multimedia and communica-
tions equipment.
Typical Application
5
Features
• Two differently optimized amplifiers in a
single package. One of them has a fully
AGC
RFC
C
C
+5 V
G2 (common)
VHF
out
D
4
3
C
AMP2
G1
6
1
VHF
in
e3
internal self-biasing network on chip and
the other has a partly integrated bias for
easy Gate 1 switch-off with PNP switching transis-
tors inside PLL -IC
RFC
C
RG1
C
+5 V
V
GG
• Internal switch for saving lines on PCB layout as
well as external components
• Integrated gate protection diodes
• Low noise figure, high gain
• Typical forward transadmittance of 31 mS
resp. 28 mS
D
UHF
out
AMP1
G1
UHF
in
S (common)
2
V
V
= 5 V: UHF AMP is on; VHF AMP is off
= 0 V: UHF AMP is off; VHF AMP is on
(0 = shorted to Ground or open)
GG
GG
19025
• Superior cross modulation at gain reduction
• High AGC-range with soft slope
• Main AGC control range from 3 V to 0.5 V
• Lead (Pb)-free component
Mechanical Data
Case: SOT-363 Plastic case
Weight: approx. 6.0 mg
V - Vishay
• Component in accordance to RoHS 2002/95/EC
Y - Year, is variable for digit from 0 to 9
and WEEE 2002/96/EC
Parts Table
Part
Marking
Package
SOT-363
TSDF52830YS
WN5
Document Number 85178
Rev. 1.2, 05-Sep-08
www.vishay.com
1
TSDF52830YS
Vishay Semiconductors
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Amplifier 1
Following data are valid for operating amplifier 1 (pin 1, 3, 5, 2) which is optimized for UHF applications
Parameter
Test condition
Symbol
Value
Unit
Drain - source voltage
VDS
8
V
Drain current
ID
25
10
mA
mA
Gate 1/Gate 2 - source peak
current
IG1/G2SM
Gate 1/Gate 2 - source voltage
Gate 1 - source voltage
Total power dissipation
Channel temperature
+ VG1 VG2SM
- VG1SM
Ptot
6
1.5
V
V
Tamb ≤ 60 °C
200
mW
°C
°C
TCh
150
Storage temperature range
Tstg
- 55 to + 150
Amplifier 2
Following data are valid for operating amplifier 2 (pin 6, 4, 5, 2) which is optimized for VHF applications
Parameter
Test condition
Symbol
Value
Unit
Drain - source voltage
VDS
8
V
Drain current
ID
30
10
mA
mA
Gate 1/Gate 2 - source peak
current
IG1/G2SM
Gate 1/Gate 2 - source voltage
Gate 1 - source voltage
Total power dissipation
Channel temperature
+ VG1
/
VG2SM
6
1.5
V
V
- VG1SM
Ptot
Tamb ≤ 60 °C
200
mW
°C
°C
TCh
150
Storage temperature range
Tstg
- 55 to + 150
Maximum Thermal Resistance
Parameter
Test condition
Symbol
RthChA
Value
Unit
1)
Channel ambient
450
K/W
1) on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35 μm Cu
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2
Document Number 85178
Rev. 1.2, 05-Sep-08
TSDF52830YS
Vishay Semiconductors
Electrical DC Characteristics
Tamb = 25 °C, unless otherwise specified
Amplifier 1
Following data are valid for operating amplifier 1 (pin 1, 3, 5, 2) which is optimized for UHF applications
Parameter
Test condition
Symbol
Min
15
Typ.
Max
10
Unit
Drain - source breakdown
voltage
ID = 10 μA, VG2S = VG1S = 0
V(BR)DSS
V
Gate 1 - source breakdown
voltage
+ IG1S = 10 mA, VG2S = VDS = 0 + V(BR)G1SS
7
7
V
IG2S = 10 mA, VG1S = VDS = 0
Gate 1 - source leakage current + VG1S = 5 V, VG2S = VDS = 0
V(BR)G2SS
+ IG1SS
IG2SS
10
20
20
17
V
nA
nA
mA
Gate 2 - source leakage current
Drain - source operating current
V
G2S = 5 V, VG1S = VDS = 0
DS = VRG1 = 5 V, VG2S = 4 V,
RG1 = 100 kΩ
V
IDSO
8
12
Gate 1 - source cut-off voltage
Gate 2 - source cut-off voltage
V
V
DS = 5 V, VG2S = 4, ID = 20 μA VG1S(OFF)
DS = VRG1 = 5 V, RG1 =100 kΩ, VG2S(OFF)
0.3
0.3
1.0
1.2
V
V
ID = 20 μA
Amplifier 2
Following data are valid for operating amplifier 2 (pin 6, 4, 5, 2) which is optimized for VHF applications
Parameter
Test condition
Symbol
Min
7
Typ.
Max
10
Unit
Gate 1 - source breakdown
voltage
+ IG1S = 10 mA, VG2S = VDS = 0 + V(BR)G1SS
V
Gate 2 - source breakdown
voltage
IG2S = 10 mA, VG1S = VDS = 0
V(BR)G2SS
7
10
V
Gate 1 - source leakage current + VG1S = 5 V, VG2S = VDS = 0
+ IG1SS
IG2SS
IDSP
50
20
17
μA
nA
Gate 2 - source leakage current
Drain - source operating current
V
G2S = 5 V, VG1S = VDS = 0
DS = VRG1 = 5 V, VG2S = 4 V,
Gate 1 = nc
DS = VRG1 = 5 V, Gate 1 = nc,
ID = 20 μA
V
8
13
mA
Gate 2 - source cut-off voltage
V
VG2S(OFF)
0.3
1.2
V
Document Number 85178
Rev. 1.2, 05-Sep-08
www.vishay.com
3
TSDF52830YS
Vishay Semiconductors
Electrical AC Characteristics
Tamb = 25 °C, unless otherwise specified
Amplifier 1
VDS = VRG1 = 5 V, VG2S = 4 V, RG1 = 100 kΩ, ID = IDSO, f = 1 MHz, Tamb = 25 °C, unless otherwise specified
Following data are valid for operating amplifier 1 (pin 1, 3, 5, 2) which is optimized for UHF applications
Parameter
Test condition
Symbol
|y21s
Min
27
Typ.
31
Max
35
Unit
mS
Forward transadmittance
|
Gate 1 input capacitance
Feedback capacitance
Output capacitance
Power gain
Cissg1
Crss
1.7
20
2.1
pF
fF
Coss
Gps
0.9
33
pF
dB
G
S = 2 mS, BS = BSopt,
GL = 0.5 mS, BL = BLopt
,
f = 200 MHz
GS = 3.3 mS, BS = BSopt
,
,
Gps
Gps
30
25
dB
dB
GL = 1 mS, BL = BLopt
f = 400 MHz
,
G
S = 3.3 mS, BS = BSopt
GL = 1 mS, BL = BLopt
f = 800 MHz
,
AGC range
Noise figure
VDS = 5 V, VG2S = 0.5 to 4 V,
f = 800 MHz
Gps
F
40
50
5.0
1.0
dB
dB
dB
GS = GL = 20 mS, BS = BL = 0,
f = 50 MHz
7.0
1.5
G
S = 2 mS, GL = 0.5 mS,
BS = BSopt, f = 400 MHz
S = 3.3 mS, GL = 1 mS,
F
G
F
1.3
2.0
dB
BS = BSopt, f = 800 MHz
Cross modulation
Input level for
Xmod
90
dBμV
k = 1 % @ 0 dB
AGC fw = 50 MHz,
funw = 60 MHz
Input level for
Xmod
100
105
dBμV
k = 1 % @ 40 dB
AGC fw = 50 MHz,
funw = 60 MHz
Remark on improving intermodulation behavior:
By setting RG1 smaller than 100 kΩ, typical value of IDSO will raise and improved intermodulation behavior will be performed.
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4
Document Number 85178
Rev. 1.2, 05-Sep-08
TSDF52830YS
Vishay Semiconductors
Amplifier 2
VDS = VRG1 = 5 V, VG2S = 4 V, Gate 1 = nc, ID = IDSP, f = 1 MHz, Tamb = 25 °C, unless otherwise specified
Following data are valid for operating amplifier 2 (pin 6, 4, 5, 2) which is optimized for VHF applications
Parameter
Test condition
Symbol
|y21s
Min
23
Typ.
28
Max
33
Unit
mS
Forward transadmittance
|
Gate 1 input capacitance
Feedback capacitance
Output capacitance
Power gain
Cissg1
Crss
2.2
20
2.7
pF
fF
Coss
Gps
1.0
32
pF
dB
GS = 2 mS, BS = BSopt,
GL = 0.5 mS, BL = BLopt
f = 200 MHz
,
G
S = 2 mS, BS = BSopt
,
Gps
28
22
dB
dB
GL = 1 mS, BL = BLopt
f = 400 MHz
,
GS = 3.3 mS, BS = BSopt
,
Gps
GL = 1 mS, BL = BLopt
f = 800 MHz
,
AGC range
Noise figure
V
DS = 5 V, VG2S = 0.5 to 4 V,
f = 200 MHz
S = GL = 20 mS, BS = BL = 0,
f = 50 MHz
S = 2 mS, GL = 1 mS,
BS = BSopt, f = 400 MHz
S = 3.3 mS, GL = 1 mS,
Gps
F
50
4.5
1.0
dB
dB
dB
G
6.0
1.6
G
F
G
F
1.5
2.3
dB
BS = BSopt, f = 800 MHz
Cross modulation
Input level for
Xmod
90
dBμV
k = 1 % @ 0 dB
AGC fw = 50 MHz,
funw = 60 MHz
Input level for
Xmod
105
dBμV
k = 1 % @ 40 dB
AGC fw = 50 MHz,
f
unw = 60 MHz
Document Number 85178
Rev. 1.2, 05-Sep-08
www.vishay.com
5
TSDF52830YS
Vishay Semiconductors
Package Dimensions in mm (Inches)
14280
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6
Document Number 85178
Rev. 1.2, 05-Sep-08
TSDF52830YS
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively.
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA.
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 85178
Rev. 1.2, 05-Sep-08
www.vishay.com
7
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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1
相关型号：
TSDF72830YS
Dual - MOSMIC- two AGC Amplifiers for TV-Tuner Prestage with Integrated Band Switch for One-Line Switching
VISHAY
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