TSFF5410_08 [VISHAY]
High Speed Infrared Emitting Diode, RoHS Compliant, 870 nm, GaAlAs Double Hetero; 高速红外发光二极管，符合RoHS ， 870纳米， GaAlAs的双异质
| 型号： | TSFF5410_08 |
| 厂家： | 
VISHAY |
| 描述： | High Speed Infrared Emitting Diode, RoHS Compliant, 870 nm, GaAlAs Double Hetero |
| 文件： | 总5页 (文件大小：110K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TSFF5410
Vishay Semiconductors
High Speed Infrared Emitting Diode, RoHS Compliant, 870 nm,
GaAlAs Double Hetero
FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): ∅ 5
• Leads with stand-off
• Peak wavelength: λp = 870 nm
• High reliability
• High radiant power
• High radiant intensity
94 8390
• Angle of half intensity: ϕ = 22ꢀ
• Low forward voltage
• Suitable for high pulse current operation
• High modulation bandwidth: fc = 24 MHz
• Good spectral matching to Si photodetectors
DESCRIPTION
TSFF5410 is an infrared, 870 nm emitting diode in GaAlAs
double hetero (DH) technology with high radiant power and
high speed, molded in a clear, untinted plastic package.
• Lead (Pb)-free component in accordance with
RoHS 2002/95/EC and WEEE 2002/96/EC
APPLICATIONS
• Infrared video data transmission between camcorder and
TV set
• Free air data transmission systems with high modulation
frequencies or high data transmission rate requirements
PRODUCT SUMMARY
COMPONENT
Ie (mW/sr)
ϕ (deg)
λ
P (nm)
tr (ns)
TSFF5410
70
22
870
15
Note
Test conditions see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
PACKAGING
Bulk
REMARKS
PACKAGE FORM
TSFF5410
MOQ: 4000 pcs, 4000 pcs/bulk
T-1¾
Note
MOQ: minimum order quantity
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
Reverse voltage
VR
IF
5
V
mA
mA
A
Forward current
100
200
1
Peak forward current
Surge forward current
Power dissipation
tp/T = 0.5, tp = 100 µs
tp = 100 µs
IFM
IFSM
PV
180
mW
Document Number: 81091
Rev. 1.6, 21-Jul-08
For technical questions, contact: emittertechsupport@vishay.com
www.vishay.com
135
TSFF5410
High Speed Infrared Emitting Diode, RoHS
Compliant, 870 nm, GaAlAs Double Hetero
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITION
SYMBOL
Tj
VALUE
100
UNIT
ꢀC
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Tamb
Tstg
- 40 to + 85
- 40 to + 100
260
ꢀC
ꢀC
t ≤ 5 s, 2 mm from case
Tsd
ꢀC
Thermal resistance junction/ambient
J-STD-051, leads 7 mm, soldered on PCB
RthJA
230
K/W
Note
Tamb = 25 ꢀC, unless otherwise specified
120
100
80
60
40
20
0
200
180
160
140
120
100
80
60
40
20
0
RthJA = 230 K/W
RthJA = 230 K/W
0
10 20 30 40 50 60 70 80 90 100
Tamb - Ambient Temperature (ꢀC)
0
10 20 30 40 50 60 70 80 90 100
Tamb - Ambient Temperature (ꢀC)
21143
21142
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
1.5
MAX.
1.8
UNIT
V
IF = 100 mA, tp = 20 ms
IF = 1 A, tp = 100 µs
IF = 1 mA
VF
VF
TKVF
IR
Forward voltage
2.3
3.0
V
Temperature coefficient of VF
Reverse current
- 1.8
mV/K
µA
V
R = 5 V
10
Junction capacitance
V
R = 0 V, f = 1 MHz, E = 0
Cj
125
70
pF
IF = 100 mA, tp = 20 ms
IF = 1 A, tp = 100 µs
IF = 100 mA, tp = 20 ms
IF = 100 mA
Ie
45
135
mW/sr
mW/sr
mW
%/K
deg
nm
Radiant intensity
Ie
700
50
Radiant power
φe
Temperature coefficient of φe
Angle of half intensity
Peak wavelength
Spectral bandwidth
Temperature coefficient of λp
Rise time
TKφe
ϕ
- 0.35
22
IF = 100 mA
IF = 100 mA
λp
870
40
Δλ
TKλp
tr
nm
IF = 100 mA
0.25
15
nm/K
ns
IF = 100 mA
Fall time
IF = 100 mA
tf
15
ns
Cut-off frequency
Virtual source diameter
IDC = 70 mA, IAC = 30 mA pp
fc
24
MHz
mm
d
2.1
Note
Tamb = 25 ꢀC, unless otherwise specified
www.vishay.com
136
For technical questions, contact: emittertechsupport@vishay.com
Document Number: 81091
Rev. 1.6, 21-Jul-08
TSFF5410
High Speed Infrared Emitting Diode, RoHS
Compliant, 870 nm, GaAlAs Double Hetero
Vishay Semiconductors
BASIC CHARACTERISTICS
Tamb = 25 ꢀC, unless otherwise specified
1.25
1.0
Tamb < 50 ꢀC
tP/T = 0.01
0.02
0.05
1000
0.75
0.5
0.25
0
0.1
0.2
0.5
100
0.01
980
880
0.1
1.0
10
100
780
tP - Pulse Duration (ms)
95 9886
16031
λ - Wavelength (nm)
Fig. 3 - Pulse Forward Current vs. Pulse Duration
Fig. 6 - Relative Radiant Power vs. Wavelength
0ꢀ
10ꢀ
20ꢀ
1000
100
30ꢀ
40ꢀ
1.0
0.9
50ꢀ
60ꢀ
tP = 100 µs
tP/T = 0.001
0.8
10
70ꢀ
0.7
80ꢀ
1
0.6
0.4
0
0.2
94 8883
0
1
2
3
4
VF - Forward Voltage (V)
18873
Fig. 4 - Forward Current vs. Forward Voltage
Fig. 7 - Relative Radiant Intensity vs. Angular Displacement
1
0
1000
100
10
- 1
- 2
- 3
1
IFDC = 70 mA
- 4
- 5
IFAC = 30 mA pp
0.1
101
102
f - Frequency (kHz)
103
104
105
1
10
100
1000
18220
IF - Forward Current (mA)
14256
Fig. 5 - Radiant Intensity vs. Forward Current
Fig. 8 - Attenuation vs. Frequency
Document Number: 81091
Rev. 1.6, 21-Jul-08
For technical questions, contact: emittertechsupport@vishay.com
www.vishay.com
137
TSFF5410
High Speed Infrared Emitting Diode, RoHS
Compliant, 870 nm, GaAlAs Double Hetero
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters
C
A
R 2.49 (sphere)
Area not plane
+ 0.2
- 0.1
1.2
0.15
Ø 5
technical drawings
according to DIN
specifications
+ 0.15
- 0.05
0.5
+ 0.15
- 0.05
0.5
2.54 nom.
6.544-5258.06-4
Issue: 2; 08.11.99
95 11260
www.vishay.com
138
For technical questions, contact: emittertechsupport@vishay.com
Document Number: 81091
Rev. 1.6, 21-Jul-08
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
相关型号：
©2020 ICPDF网 联系我们和版权申明