TSHA4400-MSZ [VISHAY]
Infrared LED, 875nm;型号: | TSHA4400-MSZ |
厂家: | VISHAY |
描述: | Infrared LED, 875nm 光电 半导体 |
文件: | 总7页 (文件大小:114K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
TSHA440.
Vishay Semiconductors
High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double
Hetero
Description
The TSHA44..series are high efficiency infrared emit-
ting diodes in GaAlAs on GaAlAs technology, molded
in a clear, untinted plastic package.
In comparison with the standard GaAs on GaAs tech-
nology these high intensity emitters feature about
50 % radiant power improvement.
94 8398
Features
• Extra high radiant power
• High radiant intensity for long transmis-
sion distance
• Suitable for high pulse current operation
e2
Applications
• Infrared remote control and free air transmission
systems with high power requirements in combi-
nation with PIN photodiodes or phototransistors.
• Standard T-1(∅ 3 mm) package for low space
application
• Angle of half intensity ϕ = 20ꢀ
• Peak wavelength λ = 875 nm
• High reliability
• Good spectral matching to Si photodetectors
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
• Because of the very low radiance absorption in
glass at the wavelength of 875 nm, this emitter
series is also suitable for systems with panes in
the transmission range between emitter and
detector.
p
Absolute Maximum Ratings
Tamb = 25 ꢀC, unless otherwise specified
Parameter
Reverse voltage
Test condition
Symbol
VR
Value
5
Unit
V
Forward current
IF
IFM
IFSM
PV
100
mA
mA
A
Peak forward current
Surge forward current
Power dissipation
tp/T = 0.5, tp = 100 µs
tp = 100 µs
200
2
180
mW
ꢀC
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Tj
100
Tamb
Tstg
Tsd
- 55 to + 100
- 55 to + 100
260
ꢀC
ꢀC
t ≤ 5 sec, 2 mm from case
ꢀC
Thermal resistance junction/
ambient
RthJA
450
K/W
Document Number 81017
Rev. 1.5, 23-Feb-07
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1
TSHA440.
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 ꢀC, unless otherwise specified
Parameter
Test condition
Symbol
VF
Min
Typ.
1.5
Max
1.8
Unit
V
Forward voltage
IF = 100 mA, tp = 20 ms
IF = 1.5 A, tp = 100 µs
IF = 100 mA
VF
TKVF
IR
3.2
4.9
V
mV/K
µA
Temp. coefficient of VF
Reverse current
- 1.6
V
R = 5 V
100
Junction capacitance
VR = 0 V, f = 1 MHz, E = 0
Cj
20
pF
Optical Characteristics
Tamb = 25 ꢀC, unless otherwise specified
Parameter
Test condition
IF = 100 mA
Symbol
Min
Typ.
Max
Unit
%/K
Temp. coefficient of φe
TKφe
- 0.7
Angle of half intensity
Peak wavelength
ϕ
20
deg
nm
IF = 100 mA
λp
875
Spectral bandwidth
Temp. coefficient of λp
Rise time
IF = 100 mA
IF = 100 mA
IF = 100 mA
IF = 1.5 A
Δλ
80
nm
nm/K
ns
TKλp
0.2
tr
tr
600
300
600
300
1.8
ns
Fall time
IF = 100 mA
IF = 1.5 A
tf
ns
tf
ns
Virtual source diameter
∅
mm
Type Dedicated Characteristics
Tamb = 25 ꢀC, unless otherwise specified
Parameter
Radiant intensity
Test condition
Part
Symbol
Ie
Min
Typ.
20
Max
60
Unit
IF = 100 mA, tp = 20 ms
IF = 1.5 mA, tp = 100 µs
IF = 100 mA, tp = 20 ms
TSHA4400
12
16
mW/sr
TSHA4401
TSHA4400
TSHA4401
TSHA4400
TSHA4401
Ie
Ie
30
240
360
20
60
mW/sr
mW/sr
mW/sr
mW
140
190
Ie
Radiant power
φe
φe
24
mW
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2
Document Number 81017
Rev. 1.5, 23-Feb-07
TSHA440.
Vishay Semiconductors
Typical Characteristics
Tamb = 25 ꢀC, unless otherwise specified
104
250
200
t
= 100 µs
p
t
/T = 0.001
p
103
102
101
150
R
thJA
100
50
0
0
20
40
60
80
100
0
1
2
3
4
Tamb - Ambient Temperature (ꢀC)
12789
VF - Forward Voltage (V)
94 8005
Figure 1. Power Dissipation vs. Ambient Temperature
Figure 4. Forward Current vs. Forward Voltage
125
100
1.2
1.1
IF = 10 mA
75
50
25
0
1.0
0.9
0.8
0.7
0
20
40
60
80
100
0
20
40
60
80
100
Tamb - Ambient Temperature (ꢀC)
94 7941
94 7990
Tamb - Ambient Temperature (ꢀC)
Figure 2. Forward Current vs. Ambient Temperature
Figure 5. Relative Forward Voltage vs. Ambient Temperature
1
1000
10
TSHA 4401
t /T= 0.01, I
p
= 2 A
FM
100
0.02
0
10
TSHA 4400
0.05
0.1
10
0.2
0.5
-1
1
10
-2
-1
0
1
2
0
1
2
3
4
10
10
10
10
10
10
10
10
10
10
I
- Forward Current (mA)
tp - Pulse Duration (ms)
94 7942
94 7947
F
Figure 3. Pulse Forward Current vs. Pulse Duration
Figure 6. Radiant Intensity vs. Forward Current
Document Number 81017
Rev. 1.5, 23-Feb-07
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3
TSHA440.
Vishay Semiconductors
0°
10°
20°
1000
100
10
30°
40°
1.0
0.9
50°
60°
0.8
1
70°
80°
0.7
0.1
0
1
2
3
4
0.6
0.6 0.4 0.2
0
0.2
0.4
10
10
10
10
10
IF - Forward Current (mA)
94 7943
94 7944
Figure 7. Radiant Power vs. Forward Current
Figure 10. Relative Radiant Intensity vs. Angular Displacement
1.6
1.2
IF = 20 mA
0.8
0.4
0
140
-10 0 10
50
100
Tamb - Ambient Temperature (ꢀC)
94 8020
Figure 8. Rel. Radiant Intensity/Power vs. Ambient Temperature
1.25
1.0
0.75
0.5
0.25
IF = 100 mA
(
)
=
(
) /
(
)
λ
p
Φ
λ
Φ
λ
Φ
e
rel
e
e
0
780
980
880
λ - Wavelenght (nm)
94 8000
Figure 9. Relative Radiant Power vs. Wavelength
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Document Number 81017
Rev. 1.5, 23-Feb-07
4
TSHA440.
Vishay Semiconductors
Package Dimensions in mm
95 10951
Document Number 81017
Rev. 1.5, 23-Feb-07
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5
TSHA440.
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
www.vishay.com
6
Document Number 81017
Rev. 1.5, 23-Feb-07
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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