TSHA4400-MSZ [VISHAY]

Infrared LED, 875nm;
TSHA4400-MSZ
型号: TSHA4400-MSZ
厂家: VISHAY    VISHAY
描述:

Infrared LED, 875nm

光电 半导体
文件: 总7页 (文件大小:114K)
中文:  中文翻译
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TSHA440.  
Vishay Semiconductors  
High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double  
Hetero  
Description  
The TSHA44..series are high efficiency infrared emit-  
ting diodes in GaAlAs on GaAlAs technology, molded  
in a clear, untinted plastic package.  
In comparison with the standard GaAs on GaAs tech-  
nology these high intensity emitters feature about  
50 % radiant power improvement.  
94 8398  
Features  
• Extra high radiant power  
• High radiant intensity for long transmis-  
sion distance  
• Suitable for high pulse current operation  
e2  
Applications  
• Infrared remote control and free air transmission  
systems with high power requirements in combi-  
nation with PIN photodiodes or phototransistors.  
• Standard T-1(3 mm) package for low space  
application  
• Angle of half intensity ϕ = 20ꢀ  
• Peak wavelength λ = 875 nm  
• High reliability  
• Good spectral matching to Si photodetectors  
• Lead (Pb)-free component  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
• Because of the very low radiance absorption in  
glass at the wavelength of 875 nm, this emitter  
series is also suitable for systems with panes in  
the transmission range between emitter and  
detector.  
p
Absolute Maximum Ratings  
Tamb = 25 ꢀC, unless otherwise specified  
Parameter  
Reverse voltage  
Test condition  
Symbol  
VR  
Value  
5
Unit  
V
Forward current  
IF  
IFM  
IFSM  
PV  
100  
mA  
mA  
A
Peak forward current  
Surge forward current  
Power dissipation  
tp/T = 0.5, tp = 100 µs  
tp = 100 µs  
200  
2
180  
mW  
ꢀC  
Junction temperature  
Operating temperature range  
Storage temperature range  
Soldering temperature  
Tj  
100  
Tamb  
Tstg  
Tsd  
- 55 to + 100  
- 55 to + 100  
260  
ꢀC  
ꢀC  
t 5 sec, 2 mm from case  
ꢀC  
Thermal resistance junction/  
ambient  
RthJA  
450  
K/W  
Document Number 81017  
Rev. 1.5, 23-Feb-07  
www.vishay.com  
1
TSHA440.  
Vishay Semiconductors  
Electrical Characteristics  
Tamb = 25 ꢀC, unless otherwise specified  
Parameter  
Test condition  
Symbol  
VF  
Min  
Typ.  
1.5  
Max  
1.8  
Unit  
V
Forward voltage  
IF = 100 mA, tp = 20 ms  
IF = 1.5 A, tp = 100 µs  
IF = 100 mA  
VF  
TKVF  
IR  
3.2  
4.9  
V
mV/K  
µA  
Temp. coefficient of VF  
Reverse current  
- 1.6  
V
R = 5 V  
100  
Junction capacitance  
VR = 0 V, f = 1 MHz, E = 0  
Cj  
20  
pF  
Optical Characteristics  
Tamb = 25 ꢀC, unless otherwise specified  
Parameter  
Test condition  
IF = 100 mA  
Symbol  
Min  
Typ.  
Max  
Unit  
%/K  
Temp. coefficient of φe  
TKφe  
- 0.7  
Angle of half intensity  
Peak wavelength  
ϕ
20  
deg  
nm  
IF = 100 mA  
λp  
875  
Spectral bandwidth  
Temp. coefficient of λp  
Rise time  
IF = 100 mA  
IF = 100 mA  
IF = 100 mA  
IF = 1.5 A  
Δλ  
80  
nm  
nm/K  
ns  
TKλp  
0.2  
tr  
tr  
600  
300  
600  
300  
1.8  
ns  
Fall time  
IF = 100 mA  
IF = 1.5 A  
tf  
ns  
tf  
ns  
Virtual source diameter  
mm  
Type Dedicated Characteristics  
Tamb = 25 ꢀC, unless otherwise specified  
Parameter  
Radiant intensity  
Test condition  
Part  
Symbol  
Ie  
Min  
Typ.  
20  
Max  
60  
Unit  
IF = 100 mA, tp = 20 ms  
IF = 1.5 mA, tp = 100 µs  
IF = 100 mA, tp = 20 ms  
TSHA4400  
12  
16  
mW/sr  
TSHA4401  
TSHA4400  
TSHA4401  
TSHA4400  
TSHA4401  
Ie  
Ie  
30  
240  
360  
20  
60  
mW/sr  
mW/sr  
mW/sr  
mW  
140  
190  
Ie  
Radiant power  
φe  
φe  
24  
mW  
www.vishay.com  
2
Document Number 81017  
Rev. 1.5, 23-Feb-07  
TSHA440.  
Vishay Semiconductors  
Typical Characteristics  
Tamb = 25 ꢀC, unless otherwise specified  
104  
250  
200  
t
= 100 µs  
p
t
/T = 0.001  
p
103  
102  
101  
150  
R
thJA  
100  
50  
0
0
20  
40  
60  
80  
100  
0
1
2
3
4
Tamb - Ambient Temperature (ꢀC)  
12789  
VF - Forward Voltage (V)  
94 8005  
Figure 1. Power Dissipation vs. Ambient Temperature  
Figure 4. Forward Current vs. Forward Voltage  
125  
100  
1.2  
1.1  
IF = 10 mA  
75  
50  
25  
0
1.0  
0.9  
0.8  
0.7  
0
20  
40  
60  
80  
100  
0
20  
40  
60  
80  
100  
Tamb - Ambient Temperature (ꢀC)  
94 7941  
94 7990  
Tamb - Ambient Temperature (ꢀC)  
Figure 2. Forward Current vs. Ambient Temperature  
Figure 5. Relative Forward Voltage vs. Ambient Temperature  
1
1000  
10  
TSHA 4401  
t /T= 0.01, I  
p
= 2 A  
FM  
100  
0.02  
0
10  
TSHA 4400  
0.05  
0.1  
10  
0.2  
0.5  
-1  
1
10  
-2  
-1  
0
1
2
0
1
2
3
4
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
I
- Forward Current (mA)  
tp - Pulse Duration (ms)  
94 7942  
94 7947  
F
Figure 3. Pulse Forward Current vs. Pulse Duration  
Figure 6. Radiant Intensity vs. Forward Current  
Document Number 81017  
Rev. 1.5, 23-Feb-07  
www.vishay.com  
3
TSHA440.  
Vishay Semiconductors  
0°  
10°  
20°  
1000  
100  
10  
30°  
40°  
1.0  
0.9  
50°  
60°  
0.8  
1
70°  
80°  
0.7  
0.1  
0
1
2
3
4
0.6  
0.6 0.4 0.2  
0
0.2  
0.4  
10  
10  
10  
10  
10  
IF - Forward Current (mA)  
94 7943  
94 7944  
Figure 7. Radiant Power vs. Forward Current  
Figure 10. Relative Radiant Intensity vs. Angular Displacement  
1.6  
1.2  
IF = 20 mA  
0.8  
0.4  
0
140  
-10 0 10  
50  
100  
Tamb - Ambient Temperature (ꢀC)  
94 8020  
Figure 8. Rel. Radiant Intensity/Power vs. Ambient Temperature  
1.25  
1.0  
0.75  
0.5  
0.25  
IF = 100 mA  
(
)
=
(
) /  
(
)
λ
p
Φ
λ
Φ
λ
Φ
e
rel  
e
e
0
780  
980  
880  
λ - Wavelenght (nm)  
94 8000  
Figure 9. Relative Radiant Power vs. Wavelength  
www.vishay.com  
Document Number 81017  
Rev. 1.5, 23-Feb-07  
4
TSHA440.  
Vishay Semiconductors  
Package Dimensions in mm  
95 10951  
Document Number 81017  
Rev. 1.5, 23-Feb-07  
www.vishay.com  
5
TSHA440.  
Vishay Semiconductors  
Ozone Depleting Substances Policy Statement  
It is the policy of Vishay Semiconductor GmbH to  
1. Meet all present and future national and international statutory requirements.  
2. Regularly and continuously improve the performance of our products, processes, distribution and  
operatingsystems with respect to their impact on the health and safety of our employees and the public, as  
well as their impact on the environment.  
It is particular concern to control or eliminate releases of those substances into the atmosphere which are  
known as ozone depleting substances (ODSs).  
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs  
and forbid their use within the next ten years. Various national and international initiatives are pressing for an  
earlier ban on these substances.  
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use  
of ODSs listed in the following documents.  
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments  
respectively  
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental  
Protection Agency (EPA) in the USA  
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.  
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting  
substances and do not contain such substances.  
We reserve the right to make changes to improve technical design  
and may do so without further notice.  
Parameters can vary in different applications. All operating parameters must be validated for each  
customer application by the customer. Should the buyer use Vishay Semiconductors products for any  
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all  
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal  
damage, injury or death associated with such unintended or unauthorized use.  
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany  
www.vishay.com  
6
Document Number 81017  
Rev. 1.5, 23-Feb-07  
Legal Disclaimer Notice  
Vishay  
Disclaimer  
All product specifications and data are subject to change without notice.  
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf  
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein  
or in any other disclosure relating to any product.  
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any  
information provided herein to the maximum extent permitted by law. The product specifications do not expand or  
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed  
therein, which apply to these products.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this  
document or by any conduct of Vishay.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless  
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such  
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting  
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding  
products designed for such applications.  
Product names and markings noted herein may be trademarks of their respective owners.  
Document Number: 91000  
Revision: 18-Jul-08  
www.vishay.com  
1

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