TSHA6501-CSZ [VISHAY]
Infrared LED, 875nm;
| 型号： | TSHA6501-CSZ |
| 厂家： | 
VISHAY |
| 描述： | Infrared LED, 875nm 半导体 |
| 文件： | 总6页 (文件大小：117K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TSHA650.
Vishay Semiconductors
High Speed Infrared Emitting Diode, 870 nm,
GaAlAs Double Hetero
Description
The TSHA650. series are high efficiency infrared
emitting diodes in GaAlAs on GaAlAs technology,
molded in a clear, untinted plastic package.
In comparison with the standard GaAs on GaAs tech-
nology these high intensity emitters feature about
70 % radiant power improvement.
In contrast to the TSHA550. series lead stand-offs are
omitted.
94 8389
Features
Applications
• Extra high radiant power
• Infrared remote control and free air transmission
systems with high power and comfortable radia-
tion angle requirements in combination with PIN
photodiodes or phototransistors.
• Suitable for high pulse current operation
• Standard T-1¾ (∅ 5 mm) package
• Leads formed without stand-off
• Angle of half intensity ϕ = 24ꢀ
• Peak wavelength λ = 875 nm
• High reliability
e2
• Because of the reduced radiance absorption in
glass at the wavelength of 875 nm, this emitter
series is also suitable for systems with panes in
the transmission range between emitter and
detector.
p
• Good spectral matching to Si photodetectors
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Absolute Maximum Ratings
Tamb = 25 ꢀC, unless otherwise specified
Parameter
Reverse voltage
Test condition
Symbol
VR
Value
Unit
V
5
100
IF
IFM
IFSM
PV
Forward current
mA
mA
A
tp/T = 0.5, tp = 100 µs
tp = 100 µs
Peak forward current
Surge forward current
Power dissipation
200
2.5
210
mW
ꢀC
Tj
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
100
Tamb
Tstg
Tsd
- 55 to + 100
- 55 to + 100
260
ꢀC
ꢀC
t ≤ 5 sec, 2 mm from case
ꢀC
Thermal resistance junction/
ambient
RthJA
350
K/W
Document Number 81022
Rev. 1.6, 28-Nov-06
www.vishay.com
1
TSHA650.
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 ꢀC, unless otherwise specified
Parameter
Test condition
Symbol
VF
Min
Typ.
1.5
Max
1.8
Unit
V
IF = 100 mA, tp = 20 ms
IF = 100 mA
Forward voltage
Temp. coefficient of VF
TKVF
IR
- 1.6
mV/K
µA
VR = 5 V
Reverse current
100
V
R = 0 V, f = 1 MHz, E = 0
Cj
Junction capacitance
20
pF
Optical Characteristics
Tamb = 25 ꢀC, unless otherwise specified
Parameter
Test condition
Symbol
Min
Typ.
- 0.7
24
Max
Unit
%/K
deg
nm
nm
nm/K
ns
Temp. coefficient of φe
Angle of half intensity
Peak wavelength
IF = 20 mA
TKφe
ϕ
IF = 100 mA
λp
875
80
IF = 100 mA
IF = 100 mA
IF = 100 mA
IF = 1.5 A
Spectral bandwidth
Temp. coefficient of λp
Δλ
TKλp
0.2
tr
tr
Rise time
600
300
600
300
2.2
ns
IF = 100 mA
IF = 1.5 A
tf
Fall time
ns
tf
ns
Virtual source diameter
∅
mm
Type Dedicated Characteristics
Tamb = 25 ꢀC, unless otherwise specified
Parameter
Forward voltage
Test condition
Part
Symbol
VF
Min
Typ.
3.2
3.2
3.2
3.2
20
Max
4.9
4.9
4.5
4.5
60
Unit
V
IF = 1.5 A, tp = 100 µs
IF = 100 mA, tp = 20 ms
IF = 1.5 A, tp = 100 µs
IF = 100 mA, tp = 20 ms
TSHA6500
TSHA6501
TSHA6502
TSHA6503
TSHA6500
TSHA6501
TSHA6502
TSHA6503
TSHA6500
TSHA6501
TSHA6502
TSHA6503
TSHA6500
TSHA6501
TSHA6502
TSHA6503
VF
VF
VF
Ie
V
V
V
Radiant intensity
12
16
mW/sr
mW/sr
mW/sr
mW/sr
mW/sr
mW/sr
mW/sr
mW/sr
mW
Ie
25
60
Ie
20
30
60
Ie
24
35
60
Ie
150
200
250
300
240
300
360
420
22
Ie
Ie
Ie
φe
φe
φe
φe
Radiant power
23
mW
24
mW
25
mW
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2
Document Number 81022
Rev. 1.6, 28-Nov-06
TSHA650.
Vishay Semiconductors
Typical Characteristics
Tamb = 25 ꢀC, unless otherwise specified
104
250
200
t
= 100 µs
p
t
/T = 0.001
p
103
102
101
150
100
50
RthJA
0
0
1
2
3
4
0
20
40
60
80
100
VF - Forward Voltage (V)
94 8005
Tamb - Ambient Temperature (ꢀC)
94 7957
Figure 1. Power Dissipation vs. Ambient Temperature
Figure 4. Forward Current vs. Forward Voltage
125
100
1.2
1.1
IF = 10 mA
75
50
25
0
1.0
0.9
0.8
0.7
100
0
20
40
60
80
100
0
20
40
60
80
Tamb - Ambient Temperature (ꢀC)
Tamb - Ambient Temperature (ꢀC)
94 8002 e
94 7990
Figure 2. Forward Current vs. Ambient Temperature
Figure 5. Relative Forward Voltage vs. Ambient Temperature
101
1000
TSHA 6503
IFSM = 2.5 A (Single Pause)
TSHA 6502
100
t /T=0.01
p
100
0.05
TSHA 6501
0.1
0.2
10
TSHA 6500
0.5
10-1
10-2
1
10-1
100
101
102
100
101
102
103
104
tp - Pulse Duration (ms)
94 8003
IF - Forward Current (mA)
94 8746
Figure 3. Pulse Forward Current vs. Pulse Duration
Figure 6. Radiant Intensity vs. Forward Current
Document Number 81022
Rev. 1.6, 28-Nov-06
www.vishay.com
3
TSHA650.
Vishay Semiconductors
1.25
1.0
1000
100
10
0.75
0.5
0.25
0
1
IF = 100 mA
) /
(
)
=
(
(
)
λ
p
Φ
λ
Φ
λ
Φ
e
rel
e
e
0.1
980
780
880
λ - Wavelenght (nm)
100
101
102
103
104
IF - Forward Current (mA)
94 8015 e
94 8000
Figure 7. Radiant Power vs. Forward Current
Figure 9. Relative Radiant Power vs. Wavelength
0ꢀ
10ꢀ
20ꢀ
1.6
30ꢀ
40ꢀ
1.2
IF = 20 mA
1.0
0.9
0.8
0.4
0
50ꢀ
60ꢀ
0.8
70ꢀ
0.7
80ꢀ
140
-10 0 10
50
100
0.6
0.6 0.4 0.2
0
0.2
0.4
Tamb - Ambient Temperature (ꢀC)
94 8020
94 8016 e
Figure 8. Rel. Radiant Intensity/Power vs. Ambient Temperature
Figure 10. Relative Radiant Intensity vs. Angular Displacement
Package Dimensions in mm
14436
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4
Document Number 81022
Rev. 1.6, 28-Nov-06
TSHA650.
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 81022
Rev. 1.6, 28-Nov-06
www.vishay.com
5
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
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