TSHF5210-ESZ [VISHAY]
Infrared LED, LAMP,IRED,890NM PEAK WAVELENGTH,LED-2B;
| 型号： | TSHF5210-ESZ |
| 厂家： | 
VISHAY |
| 描述： | Infrared LED, LAMP,IRED,890NM PEAK WAVELENGTH,LED-2B |
| 文件： | 总5页 (文件大小：98K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TSHF5210
Vishay Semiconductors
High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero
FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): ∅ 5
• Leads with stand-off
• Peak wavelength: λp = 890 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: ϕ = 10ꢀ
94 8390
• Low forward voltage
• Suitable for high pulse current operation
• High modulation bandwidth: fc = 12 MHz
• Good spectral matching with Si photodetectors
• Compliant to RoHS directive 2002/95/EC and in
DESCRIPTION
accordance to WEEE 2002/96/EC
TSHF5210 is an infrared, 890 nm emitting diode in GaAlAs
• Halogen-free according to IEC 61249-2-21 definition
double hetero (DH) technology with high radiant power and
high speed, molded in a clear, untinted plastic package.
APPLICATIONS
• Infrared high speed remote control and free air data
transmission systems with high modulation frequencies or
high data transmission rate requirements
• Transmission systems according to IrDA requirements and
for carrier frequency based systems (e.g. ASK/FSK -
coded, 450 kHz or 1.3 MHz)
• Smoke-automatic fire detectors
PRODUCT SUMMARY
COMPONENT
Ie (mW/sr)
ϕ (deg)
λ
P (nm)
tr (ns)
TSHF5210
180
10
890
30
Note
Test conditions see table “Basic Characteristics“
ORDERING INFORMATION
ORDERING CODE
PACKAGING
Bulk
REMARKS
PACKAGE FORM
TSHF5210
MOQ: 4000 pcs, 4000 pcs/bulk
T-1¾
Note
MOQ: minimum order quantity
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITION
SYMBOL
VALUE
5
UNIT
V
Reverse voltage
VR
IF
Forward current
100
200
1.5
mA
mA
A
Peak forward current
Surge forward current
Power dissipation
tp/T = 0.5, tp = 100 µs
tp = 100 µs
IFM
IFSM
PV
Tj
160
100
mW
ꢀC
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Tamb
Tstg
Tsd
- 40 to + 85
- 40 to + 100
260
ꢀC
ꢀC
t ≤ 5 s, 2 mm from case
ꢀC
J-STD-051, leads 7 mm,
soldered on PCB
Thermal resistance junction/ambient
RthJA
230
K/W
Note
amb = 25 ꢀC, unless otherwise specified
T
Document Number: 81313
Rev. 1.3, 25-Jun-09
For technical questions, contact: emittertechsupport@vishay.com
www.vishay.com
1
TSHF5210
High Speed Infrared Emitting Diode,
890 nm, GaAlAs Double Hetero
Vishay Semiconductors
180
160
140
120
100
120
100
80
60
40
20
0
RthJA = 230 K/W
80
60
40
20
0
RthJA = 230 K/W
0
10 20 30 40 50 60 70 80 90 100
Tamb - Ambient Temperature (ꢀC)
0
10 20 30 40 50 60 70 80 90 100
Tamb - Ambient Temperature (ꢀC)
21212
21211
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
1.4
MAX.
UNIT
V
IF = 100 mA, tp = 20 ms
IF = 1 A, tp = 100 µs
IF = 1 mA
VF
VF
TKVF
IR
1.6
Forward voltage
2.3
V
Temperature coefficient of VF
Reverse current
- 1.8
mV/K
µA
V
R = 5 V
10
Junction capacitance
V
R = 0 V, f = 1 MHz, E = 0
Cj
125
180
1800
50
pF
IF = 100 mA, tp = 20 ms
IF = 1 A, tp = 100 µs
IF = 100 mA, tp = 20 ms
IF = 100 mA
Ie
120
360
mW/sr
mW/sr
mW
%/K
deg
nm
Radiant intensity
Ie
Radiant power
φe
Temperature coefficient of φe
Angle of half intensity
Peak wavelength
Spectral bandwidth
Temperature coefficient of λp
Rise time
TKφe
ϕ
- 0.35
10
IF = 100 mA
IF = 100 mA
λp
890
40
Δλ
TKλp
tr
nm
IF = 100 mA
0.25
30
nm/K
ns
IF = 100 mA
Fall time
IF = 100 mA
tf
30
ns
Cut-off frequency
Virtual source diameter
I
DC = 70 mA, IAC = 30 mA pp
fc
12
MHz
mm
d
3.7
Note
amb = 25 ꢀC, unless otherwise specified
T
www.vishay.com
2
For technical questions, contact: emittertechsupport@vishay.com
Document Number: 81313
Rev. 1.3, 25-Jun-09
TSHF5210
High Speed Infrared Emitting Diode,
890 nm, GaAlAs Double Hetero
Vishay Semiconductors
BASIC CHARACTERISTICS
Tamb = 25 ꢀC, unless otherwise specified
1000
Tamb < 50 ꢀC
tP/T = 0.01
0.02
1000
100
10
1
0.05
0.1
0.2
0.5
100
0.01
0.1
0.1
1
10
100
1
10
I - Forward Current (mA)
F
100
1000
tP - Pulse Duration (ms)
16031
16971
Fig. 3 - Pulse Forward Current vs. Pulse Duration
Fig. 6 - Radiant Power vs. Forward Current
1.25
1.0
1000
100
0.75
0.5
tP = 100 µs
tP/T = 0.001
10
0.25
0
1
0
1
2
3
4
1000
800
900
VF - Forward Voltage (V)
18873
20082
λ - Wavelength (nm)
Fig. 4 - Forward Current vs. Forward Voltage
Fig. 7 - Relative Radiant Power vs. Wavelength
0ꢀ
10ꢀ
20ꢀ
10 000
1000
100
30ꢀ
40ꢀ
1.0
0.9
50ꢀ
60ꢀ
0.8
tP = 0.1 ms
10
1
70ꢀ
0.7
80ꢀ
1
10
100
1000
0.6 0.4 0.2
0
21213
IF - Forward Current (mA)
15989
Fig. 5 - Radiant Intensity vs. Forward Current
Fig. 8 - Relative Radiant Intensity vs. Angular Displacement
Document Number: 81313
Rev. 1.3, 25-Jun-09
For technical questions, contact: emittertechsupport@vishay.com
www.vishay.com
3
TSHF5210
High Speed Infrared Emitting Diode,
890 nm, GaAlAs Double Hetero
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters
C
A
R 2.49 (sphere)
Area not plane
1.1 0.25
Ø 5 0.15
technical drawings
according to DIN
specifications
+ 0.15
- 0.05
0.5
+ 0.15
0.5
- 0.05
2.54 nom.
6.544-5258.02-4
Issue: 6; 19.05.09
95 10916
www.vishay.com
4
For technical questions, contact: emittertechsupport@vishay.com
Document Number: 81313
Rev. 1.3, 25-Jun-09
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
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