TSHG6200_09 [VISHAY]
High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero; 高速红外发光二极管， 850纳米， GaAlAs的双异质
| 型号： | TSHG6200_09 |
| 厂家： | 
VISHAY |
| 描述： | High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero |
| 文件： | 总5页 (文件大小：103K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TSHG6200
Vishay Semiconductors
High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero
FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): Ø 5
• Peak wavelength: λp = 850 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: ϕ = 10ꢀ
94 8389
• Low forward voltage
• Suitable for high pulse current operation
• High modulation bandwidth: fc = 18 MHz
• Good spectral matching with CMOS cameras
• Compliant to RoHS directive 2002/95/EC and in
DESCRIPTION
TSHG6200 is an infrared, 850 nm emitting diode in GaAlAs
double hetero (DH) technology with high radiant power and
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21 definition
high speed, molded in a clear, untinted plastic package.
APPLICATIONS
• Infrared radiation source for operation with CMOS
cameras
• High speed IR data transmission
PRODUCT SUMMARY
COMPONENT
Ie (mW/sr)
ϕ (deg)
λp (nm)
tr (ns)
TSHG6200
180
10
850
20
Note
Test conditions see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
PACKAGING
Bulk
REMARKS
PACKAGE FORM
TSHG6200
MOQ: 4000 pcs, 4000 pcs/bulk
T-1¾
Note
MOQ: minimum order quantity
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITION
SYMBOL
VALUE
5
UNIT
V
Reverse voltage
VR
IF
Forward current
100
200
1
mA
mA
A
Peak forward current
Surge forward current
Power dissipation
tp/T = 0.5, tp = 100 µs
tp = 100 µs
IFM
IFSM
PV
Tj
180
100
mW
ꢀC
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Tamb
Tstg
Tsd
- 40 to + 85
- 40 to + 100
260
ꢀC
ꢀC
t ≤ 5 s, 2 mm from case
ꢀC
J-STD-051, leads 7 mm,
soldered on PCB
Thermal resistance junction/ambient
RthJA
230
K/W
Note
amb = 25 ꢀC, unless otherwise specified
T
Document Number: 81078
Rev. 1.7, 29-Jun-09
For technical questions, contact: emittertechsupport@vishay.com
www.vishay.com
1
TSHG6200
High Speed Infrared Emitting Diode,
850 nm, GaAlAs Double Hetero
Vishay Semiconductors
200
180
160
140
120
100
80
60
40
20
0
120
100
80
60
40
20
0
RthJA = 230 K/W
RthJA = 230 K/W
0
10 20 30 40 50 60 70 80 90 100
Tamb - Ambient Temperature (ꢀC)
0
10 20 30 40 50 60 70 80 90 100
Tamb - Ambient Temperature (ꢀC)
21142
21143
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
1.5
MAX.
UNIT
V
IF = 100 mA, tp = 20 ms
IF = 1 A, tp = 100 µs
IF = 1 mA
VF
VF
TKVF
IR
1.8
Forward voltage
2.3
V
Temperature coefficient of VF
Reverse current
- 1.8
mV/K
µA
V
R = 5 V
10
Junction capacitance
V
R = 0 V, f = 1 MHz, E = 0
Cj
125
180
1800
50
pF
IF = 100 mA, tp = 20 ms
IF = 1 A, tp = 100 µs
IF = 100 mA, tp = 20 ms
IF = 100 mA
Ie
120
360
mW/sr
mW/sr
mW
%/K
deg
nm
Radiant intensity
Ie
Radiant power
φe
Temperature coefficient of φe
Angle of half intensity
Peak wavelength
Spectral bandwidth
Temperature coefficient of λp
Rise time
TKφe
ϕ
- 0.35
10
IF = 100 mA
IF = 100 mA
λp
850
40
Δλ
TKλp
tr
nm
IF = 100 mA
0.25
20
nm/K
ns
IF = 100 mA
Fall time
IF = 100 mA
tf
13
ns
Cut-off frequency
Virtual source diameter
I
DC = 70 mA, IAC = 30 mA pp
fc
18
MHz
mm
d
3.7
Note
Tamb = 25 ꢀC, unless otherwise specified
www.vishay.com
2
For technical questions, contact: emittertechsupport@vishay.com
Document Number: 81078
Rev. 1.7, 29-Jun-09
TSHG6200
High Speed Infrared Emitting Diode,
850 nm, GaAlAs Double Hetero
Vishay Semiconductors
BASIC CHARACTERISTICS
Tamb = 25 ꢀC, unless otherwise specified
1000
Tamb < 50 ꢀC
tP/T = 0.01
0.02
1000
100
10
1
0.05
0.1
0.2
0.5
100
0.01
0.1
0.1
1
10
100
1
10
I - Forward Current (mA)
F
100
1000
tP - Pulse Duration (ms)
16031
16971
Fig. 3 - Pulse Forward Current vs. Pulse Duration
Fig. 6 - Radiant Power vs. Forward Current
1.25
1.0
1000
100
0.75
0.5
tP = 100 µs
tP/T = 0.001
10
0.25
0
1
900
0
1
2
3
4
800
850
VF - Forward Voltage (V)
18873
λ- Wavelength (nm)
16972
Fig. 4 - Forward Current vs. Forward Voltage
Fig. 7 - Relative Radiant Power vs. Wavelength
0ꢀ
10ꢀ
20ꢀ
10 000
1000
100
30ꢀ
40ꢀ
1.0
0.9
50ꢀ
60ꢀ
0.8
tP = 0.1 ms
10
tP/T = 0.001
70ꢀ
0.7
80ꢀ
1
1
10
100
1000
0.6 0.4 0.2
0
21307
IF - Forward Current (mA)
15989
Fig. 5 - Radiant Intensity vs. Forward Current
Fig. 8 - Relative Radiant Intensity vs. Angular Displacement
Document Number: 81078
Rev. 1.7, 29-Jun-09
For technical questions, contact: emittertechsupport@vishay.com
www.vishay.com
3
TSHG6200
High Speed Infrared Emitting Diode,
850 nm, GaAlAs Double Hetero
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters
C
A
R 2.49 (sphere)
Area not plane
5
0.15
+ 0.2
0.6
- 0.1
technical drawings
according to DIN
specifications
+ 0.15
- 0.05
0.5
+ 0.15
- 0.05
0.5
2.54 nom.
6.544-5259.02-4
Issue: 8; 19.05.09
95 10917
www.vishay.com
4
For technical questions, contact: emittertechsupport@vishay.com
Document Number: 81078
Rev. 1.7, 29-Jun-09
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to
obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 11-Mar-11
www.vishay.com
1
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