TSMS3700-GS18 [VISHAY]
Infrared LED, 950nm;
| 型号： | TSMS3700-GS18 |
| 厂家： | 
VISHAY |
| 描述： | Infrared LED, 950nm 半导体 |
| 文件： | 总6页 (文件大小：149K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TSMS3700
Vishay Semiconductors
VISHAY
GaAs Infrared Emitting Diode in SMT Package
Description
TSMS3700 is a standard GaAs infrared emitting
diode in a miniature PLCC-2 package.
Its flat window provides a wide aperture, making it
ideal for use with external optics.
The diode is case compatible to the TEMT3700 pho-
totransistor, allowing the user to assemble his own
optical interrupters.
Features
• SMT IRED with high radiant power
• Low forward voltage
Applications
Infrared source in tactile keyboards
IR diode in low space applications
• Compatible with automatic placement equipment
• EIA and ICE standard package
• Suitable for infrared, vapor phase and wavesolder
process
Matching with phototransistor TEMT3700 in reflective
sensors
• Available in 8 mm tape
PCB mounted infrared sensors
• Suitable for DC and high pulse current operation
• Wide angle of half intensity ϕ = ꢀ0°
• Peak wavelength λp = 950 nm
• High reliability
Infrared emitter for miniature light barriers
• Matching to TEMT3700 phototransistor
• Lead-free device
Parts Table
Part
Ordering code
Remarks
TSMS3700
TSMS3700-GS08
TSMS3700-GS18
MOQ: 7500 pcs
MOQ: 8000 pcs
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
Parameter
amb
Test condition
Symbol
Value
5
Unit
V
Reverse Voltage
V
R
Forward current
I
100
200
mA
mA
A
F
Peak Forward Current
Surge Forward Current
Power Dissipation
t /T = 0.5, t = 100 µs
I
FM
p
p
t = 100 µs
I
1.5
p
FSM
P
170
mW
°C
V
Junction Temperature
Operating Temperature Range
T
100
j
T
- 55 to + 100
°C
amb
Document Number 81037
Rev. 1.7, 22-Jun-04
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TSMS3700
Vishay Semiconductors
VISHAY
Parameter
Test condition
Symbol
Value
Unit
°C
Storage Temperature Range
T
- 55 to + 100
stg
Soldering Temperature
t ≤ 10 sec
on PC board
T
2ꢀ0
450
°C
sd
Thermal Resistance Junction/
Ambient
R
K/W
thJA
Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter
Test condition
Symbol
Min
Typ.
1.3
Max
1.7
Unit
V
Forward Voltage
I
I
I
= 100 mA, t = 20 ms
V
V
F
F
F
p
F
F
= 1 A, t = 100 µs
1.8
V
mV/K
µA
p
Temp. Coefficient of V
Reverse Current
= 100 mA
= 5 V
TK
I
- 1.3
F
VF
V
V
100
R
R
Junction capacitance
= 0 V, f = 1 MHz, E = 0
C
30
pF
R
j
Optical Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter
Test condition
Symbol
Min
1.ꢀ
Typ.
4.5
Max
Unit
Radiant Intensity
I
I
I
I
= 100 mA, t = 20 ms
I
8
mW/sr
F
F
F
F
p
e
e
= 1.5 A, t = 100 µs
I
35
15
mW/sr
mW
p
Radiant Power
= 100 mA, t = 20 ms
φ
e
p
Temp. Coefficient of φ
= 100 mA
TK
- 0.8
%/K
e
φe
Angle of Half Intensity
Peak Wavelength
ϕ
ꢀ0
deg
nm
I
I
I
I
I
I
I
= 100 mA
= 100 mA
= 100 mA
= 20 mA
= 1 A
λ
950
F
F
F
F
F
F
F
p
Spectral Bandwidth
∆λ
TK
50
nm
nm/K
ns
Temp. Coefficient of λ
0.2
p
λp
Rise Time
t
t
800
400
800
400
0.5
r
r
ns
Fall Time
= 20 mA
= 1 A
t
t
ns
f
f
ns
Virtual Source Diameter
∅
mm
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
Figure 1. Power Dissipation vs. Ambient Temperature
250
200
150
100
50
R
thJA
0
0
20
40
60
80
100
T
amb
- Ambient Temperature ( °C )
94 8029
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2
Document Number 81037
Rev. 1.7, 22-Jun-04
TSMS3700
Vishay Semiconductors
VISHAY
125
100
1.2
1.1
I
= 10 mA
F
75
50
25
1.0
0.9
0.8
0.7
R
thJA
0
0
0
20
40
60
80
100
20
40
60
80
100
T
- Ambient Temperature (°C )
94 7916
T
amb
- Ambient Temperature ( °C )
94 7990
amb
Figure 2. Forward Current vs. Ambient Temperature
Figure 5. Relative Forward Voltage vs. Ambient Temperature
10000
1000
100
T
< 60°C
amb
t
/T = 0.005
p
0.01
0.02
10
1
0.05
100
0.2
0.5
DC
0.1
10
1
0.1
100
0.01
0.1
1
10
0
1
2
3
4
10
10
I - Forward Current ( mA )
F
10
10
10
t
- Pulse Length ( ms )
95 9985
94 7956
p
Figure 3. Pulse Forward Current vs. Pulse Duration
Figure ꢀ. Radiant Intensity vs. Forward Current
4
10
1000
3
2
1
0
10
10
10
10
100
10
1
-1
0.1
10
0
1
F
2
3
4
0
1
2
3
4
10
10
I - Forward Current ( mA )
F
10
10
10
V
- Forward Voltage ( V )
94 7996
94 8012
Figure 4. Forward Current vs. Forward Voltage
Figure 7. Radiant Power vs. Forward Current
Document Number 81037
Rev. 1.7, 22-Jun-04
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TSMS3700
Vishay Semiconductors
VISHAY
1.6
1.2
I
= 20 mA
F
0.8
0.4
0
140
-10
0
10
50
- Ambient Temperature (°C )
amb
100
T
94 7993
Figure 8. Rel. Radiant Intensity/Power vs. Ambient Temperature
1.25
1.0
0.75
0.5
0.25
I
= 100 mA
950
F
0
1000
900
-
94 7994
Wavelength ( nm )
Figure 9. Relative Radiant Power vs. Wavelength
0°
10°
20°
30°
40°
1.0
0.9
0.8
50°
60°
70°
80°
0.7
0.6
0.6 0.4 0.2
0
0.2
0.4
94 8013
Figure 10. Relative Radiant Intensity vs. Angular Displacement
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Document Number 81037
Rev. 1.7, 22-Jun-04
TSMS3700
Vishay Semiconductors
VISHAY
Package Dimensions in mm
3.5 0.2
technical drawings
according to DIN
specifications
Mounting Pad Layout
Pin identification
1.2
area covered with
solder resist
C
A
4
1.6 (1.9)
∅ 2.4
Dimensions: IR and Vaporphase
(Wave Soldering)
+ 0.15
3
Drawing-No. : 6.541-5025.01-4
Issue: 7; 05.04.04
95 11314
Document Number 81037
Rev. 1.7, 22-Jun-04
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TSMS3700
Vishay Semiconductors
VISHAY
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/ꢀ90/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 ꢀ7 2831, Fax number: 49 (0)7131 ꢀ7 2423
www.vishay.com
ꢀ
Document Number 81037
Rev. 1.7, 22-Jun-04
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