TSOP-6 [VISHAY]
Automotive N-Channel 30 V (D-S) 175 °C MOSFET; 汽车N沟道30 V （ D- S） 175℃ MOSFET
| 型号： | TSOP-6 |
| 厂家： | 
VISHAY |
| 描述： | Automotive N-Channel 30 V (D-S) 175 °C MOSFET |
| 文件： | 总7页 (文件大小：134K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SQ3456BEV
Vishay Siliconix
Automotive N-Channel 30 V (D-S) 175 °C MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• Compliant to RoHS Directive 2002/95/EC
• AEC-Q101 Qualifiedc
PRODUCT SUMMARY
VDS (V)
30
R
R
DS(on) () at VGS = 10 V
DS(on) () at VGS = 4.5 V
0.035
0.052
7.8
I
D (A)
Configuration
Single
TSOP-6
Top View
(1, 2, 5, 6) D
1
2
3
6
3 mm
5
4
(3) G
2.85 mm
Marking Code: 8Lxxx
(4) S
N-Channel MOSFET
ORDERING INFORMATION
Package
TSOP-6
Lead (Pb)-free and Halogen-free
SQ3456BEV-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
VDS
Drain-Source Voltage
Gate-Source Voltage
30
V
VGS
20
T
C = 25 °C
7.8
ID
Continuous Drain Current
TC = 125 °C
4.5
IS
Continuous Source Current (Diode Conduction)
Pulsed Drain Currenta
5
A
IDM
IAS
EAS
31
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
10
L = 0.1 mH
5
mJ
W
TC = 25 °C
4
1.3
Maximum Power Dissipationa
PD
TC = 125 °C
TJ, Tstg
Operating Junction and Storage Temperature Range
- 55 to + 175
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
RthJA
LIMIT
110
38
UNIT
PCB Mountb
Junction-to-Ambient
°C/W
RthJF
Junction-to-Foot (Drain)
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. When mounted on 1" square PCB (FR-4 material).
c. Parametric verification ongoing.
Document Number: 67934
S11-0959-Rev. A, 06-Jun-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ3456BEV
Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX. UNIT
Static
VDS
VGS(th)
IGSS
VGS = 0 V, ID = 250 μA
VDS = VGS, ID = 250 μA
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
30
1.5
-
-
-
V
2.0
2.5
VDS = 0 V, VGS
VGS = 0 V
VGS = 0 V
GS = 0 V
VGS = 10 V
GS = 10 V
VGS = 4.5 V
=
20 V
-
100
1
nA
μA
A
VDS = 30 V
-
-
IDSS
VDS = 30 V, TJ = 125 °C
VDS = 30 V, TJ = 175 °C
Zero Gate Voltage Drain Current
On-State Drain Currenta
-
-
50
V
-
-
150
-
ID(on)
VDS5 V
10
-
-
0.028
0.036
-
V
ID = 6 A
0.035
0.052
0.054
0.064
-
ID = 4.9 A
-
Drain-Source On-State Resistancea
RDS(on)
V
V
GS = 10 V
GS = 10 V
ID = 6 A, TJ = 125 °C
ID = 6 A, TJ = 175 °C
-
-
-
Forward Transconductanceb
Dynamicb
gfs
VDS = 15 V, ID = 5 A
-
21
S
Ciss
Coss
Crss
Qg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
Turn-On Delay Timec
Rise Timec
-
-
-
-
-
-
-
-
-
-
295
67
25
6
370
85
35
10
-
VGS = 0 V
VDS = 15 V, f = 1 MHz
VDS = 15 V, ID = 6 A
pF
nC
Qgs
Qgd
td(on)
tr
VGS = 10 V
1.2
1
-
6
9
12
13
8
18
20
12
VDD = 15 V, RL = 2.5
ns
ID 6 A, VGEN = 10 V, Rg = 1
Turn-Off Delay Timec
Fall Timec
td(off)
tf
Source-Drain Diode Ratings and Characteristicsb
Pulsed Currenta
ISM
-
-
-
31
A
V
VSD
IF = 3 A, VGS = 0 V
Forward Voltage
0.8
1.1
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 67934
S11-0959-Rev. A, 06-Jun-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ3456BEV
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
40
32
24
16
8
40
32
24
16
8
VGS = 10 V thru 5 V
VGS = 4 V
TC = 25 °C
TC = 125 °C
TC = - 55 °C
VGS = 3 V
8
0
0
0
2
4
6
10
0
2
4
6
8
10
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
Output Characteristics
30
24
18
12
6
0.15
0.12
0.09
0.06
0.03
0.00
TC = - 55 °C
TC = 25 °C
VGS = 4.5 V
TC = 125 °C
VGS = 10 V
0
0.0
1.2
2.4
3.6
4.8
6.0
0
8
16
24
32
40
ID - Drain Current (A)
ID - Drain Current (A)
On-Resistance vs. Drain Current
Transconductance
500
400
300
200
100
0
10
8
ID = 6 A
Ciss
6
VDS = 15 V
4
2
Coss
Crss
0
0
6
12
18
24
30
0
2
4
6
8
10
Qg - Total Gate Charge (nC)
VDS - Drain-to-Source Voltage (V)
Gate Charge
Capacitance
Document Number: 67934
S11-0959-Rev. A, 06-Jun-11
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ3456BEV
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
2.0
1.7
1.4
1.1
0.8
0.5
100
ID = 6 A
10
VGS = 10 V
TJ = 150 °C
1
VGS = 4.5 V
0.1
TJ = 25 °C
0.01
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
- 50 - 25
0
25
50
75 100 125 150 175
TJ - Junction Temperature (°C)
VSD - Source-to-Drain Voltage (V)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
0.5
0.2
0.25
0.20
0.15
0.10
0.05
0.00
- 0.1
- 0.4
- 0.7
- 1.0
ID = 5 mA
ID = 250 μA
TJ = 150 °C
TJ = 25 °C
0
2
4
6
8
10
- 50 - 25
0
25
50
75 100 125 150 175
VGS - Gate-to-Source Voltage (V)
TJ - Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage
40
ID = 1 mA
38
36
34
32
30
- 50 - 25
0
25
50
75 100 125 150 175
TJ - Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
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Document Number: 67934
S11-0959-Rev. A, 06-Jun-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ3456BEV
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
100
IDM Limited
10
1
100 μs
1 ms
Limited by RDS(on)
*
10 ms
100 ms
1s, 10s, DC
0.1
0.01
TC = 25 °C
Single Pulse
BVDSS Limited
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
1
Duty Cycle = 0.5
0.2
Notes:
0.1
P
DM
0.1
0.05
t
1
t
2
t
t
1
2
0.02
1. Duty Cycle, D =
Single Pulse
2. Per Unit Base = R
= 110 °C/W
thJA
(t)
3. TJM - T = P
Z
A
DM thJA
4. Surface Mounted
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Document Number: 67934
S11-0959-Rev. A, 06-Jun-11
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ3456BEV
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
1
Duty Cycle = 0.5
0.2
0.1
0.1
Single Pulse
0.05
0.02
0.01
0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Note
•
The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Foot (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?67934.
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Document Number: 67934
S11-0959-Rev. A, 06-Jun-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
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provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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Document Number: 91000
Revision: 11-Mar-11
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