TSOP1138SK1 [VISHAY]
IR Receiver Modules for Remote Control Systems; 红外接收器模块的远程控制系统
| 型号： | TSOP1138SK1 |
| 厂家： | 
VISHAY |
| 描述： | IR Receiver Modules for Remote Control Systems |
| 文件： | 总7页 (文件大小：223K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TSOP11..SK1
Vishay Semiconductors
VISHAY
IR Receiver Modules for Remote Control Systems
Description
The TSOP11..SK1 - series are miniaturized receivers
for infrared remote control systems. PIN diode and
preamplifier are assembled on lead frame, the epoxy
package is designed as IR filter.
The demodulated output signal can directly be
decoded by a microprocessor. The main benefit is the
operation with short burst transmission codes and
high data rates.
Features
• Photo detector and preamplifier in one package
• Internal filter for PCM frequency
• Improved shielding against electrical field
Parts Table
disturbance
Part
Carrier Frequency
30 kHz
33 kHz
• TTL and CMOS compatibility
TSOP1130SK1
TSOP1133SK1
TSOP1136SK1
TSOP1137SK1
TSOP1138SK1
TSOP1140SK1
TSOP1156SK1
• Output active low
• Low power consumption
• High immunity against ambient light
36 kHz
36.7 kHz
38 kHz
40 kHz
56 kHz
Special Features
• Enhanced data rate up to 4000 bit/s
• Operation with short bursts possible
(≥ 6 cycles/burst)
Block Diagram
Application Circuit
2
VS
25 kΩ
16842
R1 = 100 Ω
3
OUT
Transmitter
with
TSALxxxx
TSOPxxxx
VS
+VS
Band Demo-
C1
=
Input
AGC
dulator
Pass
4.7 µF
µC
1
GND
OUT
GND
VO
PIN
GND
Control
Circuit
R1 + C1 recommended to suppress power supply
disturbances.
The output voltage should not be hold continuously at
=
a voltage below VO 3.3 V by the external circuit.
Document Number 82159
Rev. 2, 05-May-03
www.vishay.com
1
TSOP11..SK1
Vishay Semiconductors
VISHAY
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
VS
Value
Unit
V
Supply Voltage
(Pin 2)
(Pin 2)
(Pin 3)
(Pin 3)
- 0.3 to + 6.0
Supply Current
IS
VO
5
- 0.3 to + 6.0
5
mA
V
Output Voltage
Output Current
IO
mA
°C
Junction Temperature
Storage Temperature Range
Operating Temperature Range
Power Consumption
Soldering Temperature
Tj
100
Tstg
Tamb
Ptot
Tsd
- 25 to + 85
- 25 to + 85
50
°C
°C
(Tamb ≤ 85 °C)
mW
°C
t ≤ 10 s, 1 mm from case
260
Electrical and Optical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
VS = 5 V, Ev = 0
Symbol
ISD
Min
0.8
Typ.
1.2
Max
1.5
Unit
mA
Supply Current (Pin 2)
VS = 5 V, Ev = 40 klx, sunlight
ISH
VS
d
1.5
mA
V
Supply Voltage (Pin 2)
Transmission Distance
4.5
5.5
Ev = 0, test signal see fig.3,
35
m
IR diode TSAL6200, IF = 0.4 A
IOSL = 0.5 mA, Ee = 0.7 mW/m2,
f = fo, test signal see fig.1
Output Voltage Low (Pin 3)
Irradiance (30 - 40 kHz)
VOSL
250
mV
mW/m2
mW/m2
mW/m2
mW/m2
W/m2
deg
Test signal see fig.1
Test signal see fig.3
Test signal see fig.1
Test signal see fig.3
Test signal see fig.1
Ee min
Ee min
Ee min
Ee min
Ee max
ϕ1/2
0.4
0.6
0.5
0.7
0.6
0.35
0.45
0.40
Irradiance (56 kHz)
Irradiance
Directivity
30
Angle of half transmission
distance
45
Typical Characteristics (T
= 25 °C unless otherwise specified)
amb
Optical Test Signal
E
e
(IR diode TSAL6200, I =0.4 A, N=6 pulses, f=f , T=10 ms)
F
0
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
Output Pulse
t
t
*)
pi
T
*) t w 6/fo is recommended for optimal function
Output Signal
pi
Input Burst Duration
= 950 nm,
14337
V
V
O
1 )
3/f < t < 9/f
0
0
d
optical test signal, fig.1
2 )
t
– 4/f < t < t + 6/f
pi
0
po
pi
0
OH
OL
0.1
1.0
10.0 100.0 1000.010000.0
2
V
1 )
2 )
t
t
d
t
po
16907
E – Irradiance ( mW/m )
e
Figure 1. Output Function
Figure 2. Pulse Length and Sensitivity in Dark Ambient
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Document Number 82159
Rev. 2, 05-May-03
TSOP11..SK1
Vishay Semiconductors
VISHAY
Optical Test Signal
E
e
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Correlation with ambient light sources:
2
10W/m ^1.4klx (Std.illum.A,T=2855K)
2
10W/m ^8.2klx (Daylight,T=5900K)
t
600
s
600 s
T = 60 ms
Output Signal, ( see Fig.4 )
94 8134
Ambient, = 950 nm
V
O
V
OH
V
OL
0.01
0.10
1.00
10.00
100.00
t
T
on
T
off
2
16911
E – Ambient DC Irradiance (W/m )
Figure 3. Output Function
Figure 6. Sensitivity in Bright Ambient
2.0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
f = f
o
Ton
Toff
1.5
1.0
0.5
0.0
f = 10 kHz
f = 1 kHz
= 950 nm,
optical test signal, fig.3
f = 100 Hz
0.1
1.0
10.0 100.0 1000.010000.0
2
0.1
1.0
10.0
100.0
1000.0
16912
16910
E
e
– Irradiance ( mW/m
)
V
sRMS
– AC Voltage on DC Supply Voltage (mV)
Figure 4. Output Pulse Diagram
Figure 7. Sensitivity vs. Supply Voltage Disturbances
1.2
2.0
1.0
0.8
0.6
0.4
0.2
0.0
f(E) = f
0
1.6
1.2
0.8
f = f "5%
0
0.4
0.0
f ( 3dB ) = f /7
0
2.0
E – Field Strength of Disturbance ( kV/m )
0.0
0.4
0.8
1.2
1.6
0.7
0.9
1.1
1.3
16926
f/f – Relative Frequency
0
94 8147
Figure 5. Frequency Dependence of Responsivity
Figure 8. Sensitivity vs. Electric Field Disturbances
Document Number 82159
Rev. 2, 05-May-03
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TSOP11..SK1
Vishay Semiconductors
VISHAY
0°
10°
20°
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
30°
40°
1.0
0.9
0.8
50°
60°
2
f = 38 kHz, E = 2 mW/m
e
70°
80°
0.2
0.1
0.0
0.7
0.6
0
20
40
60
80
100 120
0.6 0.4 0.2
0
0.2
0.4
16914
d
- Relative Transmission Distance
rel
Burst Length ( number of cycles / burst )
95 11340p2
Figure 9. Max. Envelope Duty Cycle vs. Burstlength
Figure 12. Horizontal Directivity ϕx
0°
10°
20°
0.6
30°
40°
Sensitivity in dark ambient
0.5
0.4
0.3
0.2
0.1
0.0
1.0
0.9
0.8
50°
60°
70°
80°
0.7
0.6
–30 –15
0
15 30 45 60 75 90
0.6 0.4 0.2
0
0.2
0.4
d
- Relative Transmission Distance
16918
T
amb
– Ambient Temperature ( qC )
95 11339p2
rel
Figure 10. Sensitivity vs. Ambient Temperature
Figure 13. Vertical Directivity ϕy
1.2
1.0
0.8
0.6
0.4
0.2
0
1150
750
850
950
1050
– Wavelength ( nm )
94 8408
Figure 11. Relative Spectral Sensitivity vs. Wavelength
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Document Number 82159
Rev. 2, 05-May-03
4
TSOP11..SK1
Vishay Semiconductors
VISHAY
Suitable Data Format
The circuit of the TSOP11..SK1 is designed in that
way that unexpected output pulses due to noise or
disturbance signals are avoided. A bandpass filter, an
integrator stage and an automatic gain control are
used to suppress such disturbances.
The distinguishing mark between data signal and dis-
turbance signal are carrier frequency, burst length
and duty cycle.
IR Signal from fluorescent
lamp with low modulation
The data signal should fulfill the following conditions:
• Carrier frequency should be close to center fre-
quency of the bandpass (e.g. 38 kHz).
0
5
10
15
20
• Burst length should be 6 cycles/burst or longer.
16920
Time ( ms )
• After each burst which is between 6 cycles and 70
cycles a gap time of at least 10 cycles is necessary.
Figure 14. IR Signal from Fluorescent Lamp with low Modulation
• For each burst which is longer than 1.8 ms a corre-
sponding gap time is necessary at some time in the
data stream. This gap time should have at least same
length as the burst.
• Up to 2200 short bursts per second can be received
continuously.
Some examples for suitable data format are: NEC
Code, Toshiba Micom Format, Sharp Code, RC5
Code, RC6 Code, RCMM Code, R-2000 Code,
RECS-80 Code.
When a disturbance signal is applied to the
TSOP11..SK1 it can still receive the data signal. How-
ever the sensitivity is reduced to that level that no
unexpected pulses will occur.
Some examples for such disturbance signals which
are suppressed by the TSOP11..SK1 are:
• DC light (e.g. from tungsten bulb or sunlight)
• Continuous signal at 38 kHz or at any other fre-
quency
• Signals from fluorescent lamps with electronic bal-
last (an example of the signal modulation is in the fig-
ure below).
Document Number 82159
Rev. 2, 05-May-03
www.vishay.com
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TSOP11..SK1
Vishay Semiconductors
VISHAY
Package Dimensions in mm
12831
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Document Number 82159
Rev. 2, 05-May-03
TSOP11..SK1
Vishay Semiconductors
VISHAY
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 82159
Rev. 2, 05-May-03
www.vishay.com
7
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