TSOP31137 [VISHAY]
Photo IC, LOGIC OUTPUT PHOTO DETECTOR, ROHS COMPLIANT, PLASTIC PACKAGE-3;
| 型号： | TSOP31137 |
| 厂家： | 
VISHAY |
| 描述： | Photo IC, LOGIC OUTPUT PHOTO DETECTOR, ROHS COMPLIANT, PLASTIC PACKAGE-3 远程控制 输出元件 光电 |
| 文件： | 总8页 (文件大小：156K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TSOP311..
Vishay Semiconductors
IR Receiver Modules for Remote Control Systems
Description
The TSOP311.. - series are miniaturized receivers for
infrared remote control systems. PIN diode and
preamplifier are assembled on lead frame, the epoxy
package is designed as IR filter.
The demodulated output signal can directly be
decoded by a microprocessor. The main benefit is the
operation with short burst transmission codes and
1
2
94 8691
3
high data rates at a supply voltage of 3 V.
This component has not been qualified according to
automotive specifications.
Features
Mechanical Data
• Photo detector and preamplifier in one
package
Pinning:
1 = GND, 2 = V , 3 = OUT
S
• Built in filter for carrier frequency
• Improved shielding against electrical field
disturbance
e3
• TTL and CMOS compatibility
• Output active low
• Supply voltage: 2.7 V to 5.5 V
• High immunity against ambient light
• Lead (Pb)-free component
Parts Table
Part
TSOP31130
TSOP31133
TSOP31136
TSOP31137
TSOP31138
TSOP31140
TSOP31156
Carrier Frequency
30 kHz
33 kHz
36 kHz
36.7 kHz
38 kHz
40 kHz
56 kHz
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Special Features
• Enhanced data rate up to 4000 bit/s
• Operation with short bursts possible
(≥ 6 cycles/burst)
Block Diagram
Application Circuit
17170
R1= 100 Ω
16832
Transmitter
TSOPxxxx
2
VS
with
VS
+ VS
GND
C1=
4.7µF
TSALxxxx
30 kΩ
µC
3
OUT
VO
OUT
Band Demo-
GND
Input
AGC
dulator
Pass
1
R1 and C1 recommended to suppress power supply
disturbances. The output voltage should not be
hold continuously at a voltage below VO = 2.0 V
by the external circuit.
PIN
GND
Control
Circuit
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68
Document Number 84647
Rev. 1.1, 19-Jan-07
TSOP311..
Vishay Semiconductors
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Supply Voltage
Test condition
Symbol
VS
Value
Unit
V
(Pin 2)
- 0.3 to
+ 6.0
IS
Supply Current
Output Voltage
(Pin 2)
(Pin 3)
3
mA
V
VO
- 0.3 to
(VS + 0.3)
IO
Tj
Output Current
(Pin 3)
10
100
mA
°C
Junction Temperature
Storage Temperature Range
Operating Temperature Range
Power Consumption
Tstg
Tamb
Ptot
Tsd
- 25 to + 85
- 25 to + 85
30
°C
°C
(Tamb ≤ 85 °C)
mW
°C
Soldering Temperature
t ≤ 10 s, 1 mm from case
260
Electrical and Optical Characteristics
Tamb = 25 °C, unless otherwise specified
V
S = 3 V
Parameter
Test condition
Symbol
Min
0.7
Typ.
1.2
1.3
Max
1.5
Unit
mA
mA
V
Ev = 0
ISD
ISH
VS
d
Supply Current (Pin 3)
Ev = 40 klx, sunlight
Supply Voltage
2.7
5.5
Transmission Distance
Ev = 0, test signal see fig. 1,
35
m
IR diode TSAL6200,
IF = 250 mA
IOSL = 0.5 mA, Ee = 0.7 mW/m2,
test signal see fig. 1
Output Voltage Low (Pin 1)
Irradiance (30 - 40 kHz)
VOSL
250
0.5
mV
mW/m2
mW/m2
mW/m2
mW/m2
V
S = 3 V
Pulse width tolerance:
pi - 5/fo < tpo < tpi + 6/fo,
Ee min
0.35
0.4
t
test signal see fig. 3
VS = 3 V
Irradiance (56 kHz)
Irradiance (30 - 40 kHz)
Irradiance (56 kHz)
Ee min
Ee min
Ee min
0.6
0.6
0.7
Pulse width tolerance:
t
pi - 5/fo < tpo < tpi + 6/fo,
test signal see fig. 3
VS = 5 V
0.45
0.5
Pulse width tolerance:
t
pi - 5/fo < tpo < tpi + 6/fo,
test signal see fig. 3
VS = 5 V
Pulse width tolerance:
t
pi - 5/fo < tpo < tpi + 6/fo,
test signal see fig. 3
tpi - 5/fo < tpo < tpi + 6/fo,
test signal see fig. 3
W/m2
deg
Irradiance
Directivity
Ee max
30
Angle of half transmission
distance
ϕ1/2
45
Document Number 84647
Rev. 1.1, 19-Jan-07
www.vishay.com
69
TSOP311..
Vishay Semiconductors
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
Optical Test Signal
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
E
e
(IR diode TSAL6200, IF = 0.4 A, N = 6 pulses,
f = f0,T = 10 ms)
Ton
Toff
t
t
pi
*)
T
*) t
pi
6/f is recommended for optimal function
o
Output Signal
14337
V
V
= 950 nm,
optical test signal, fig. 3
O
1 )
3/f < t < 9/f
0
0
d
2 )
t
pi
- 4/f < t < t + 6/f
0
po
pi
0
OH
OL
V
0.1
1.0
10.0 100.0 1000.0 10000.0
1 )
2 )
t
t
d
t
po
16910
E
- Irradiance (mW/m2)
e
Figure 4. Output Pulse Diagram
Figure 1. Output Function
0.35
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.30
0.25
0.20
0.15
0.10
0.05
0.00
Output Pulse
Input Burst Duration
f = f0 5 ꢀ
f (3 dB) = f /7
= 950 nm,
optical test signal, fig.1
0
0.1
1.0
10.0 100.0 1000.0 10000.0
Ee - Irradiance (mW/m²)
0.7
0.9
1.1
1.3
16926
16907
f/f - Relative Frequency
0
Figure 5. Frequency Dependence of Responsivity
Figure 2. Pulse Length and Sensitivity in Dark Ambient
Optical Test Signal
4.0
E
e
Correlation with ambient light sources:
3.5
2
10 W/m
10 W/m
1.4 klx(Std.illum.A,T= 2855 K)
8.2 klx(Daylight, T= 5900 K)
2
3.0
2.5
2.0
1.5
1.0
0.5
0.0
t
600 µs
600 µs
T = 60 ms
Output Signal, (see fig. 4)
94 8134
Ambient, = 950 nm
V
O
V
OH
OL
V
t
T
T
off
on
0.01
0.1
E - Ambient DC Irradiance (W/m )
Figure 6. Sensitivity in Bright Ambient
1
10
100
2
16911
Figure 3. Output Function
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70
Document Number 84647
Rev. 1.1, 19-Jan-07
TSOP311..
Vishay Semiconductors
2.0
1.5
1.0
0.5
0.0
0.6
0.5
0.4
0.3
0.2
0.1
0.0
Sensitivity in dark ambient
f = f
o
f = 10 kHz
f = 1 kHz
f = 100 Hz
100 1000
0.1
1
10
- 30 - 15
0
15 30 45 60 75
90
16912
V
sRMS
- AC Voltage on DC Supply Voltage (mV)
16918
T
amb
- Ambient Temperature (°C)
Figure 7. Sensitivity vs. Supply Voltage Disturbances
Figure 10. Sensitivity vs. Ambient Temperature
1.2
1.0
0.8
0.6
0.4
0.2
0
2.0
f(E) = f
0
1.6
1.2
0.8
0.4
0.0
2.0
0.0
0.4
0.8
1.2
1.6
750
850
950
1050
1150
94 8408
- Wavelength (nm)
E - Field Strength of Disturbance (kV/m)
94 8147
Figure 8. Sensitivity vs. Electric Field Disturbances
Figure 11. Relative Spectral Sensitivity vs. Wavelength
0°
10°
20°
1.0
0.9
0.8
0.7
0.6
0.5
0.4
30°
40°
1.0
0.9
0.8
50°
60°
0.3
2
f = 38 kHz, E = 2 mW/m
70°
80°
e
0.2
0.7
0.1
0.0
0
20
40
60
80
100 120
0.6
0.6 0.4 0.2
0
0.2
0.4
16914
Burst Length (number of cycles/burst)
d
- Relative Transmission Distance
95 11340p2
rel
Figure 9. Max. Envelope Duty Cycle vs. Burstlength
Figure 12. Horizontal Directivity ϕx
Document Number 84647
Rev. 1.1, 19-Jan-07
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71
TSOP311..
Vishay Semiconductors
0°
10°
20°
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
30°
40°
1.0
0.9
0.8
50°
60°
70°
80°
0.7
0.6
- Relative Transmission Distance
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
- Supply Voltage (V)
0.6 0.4 0.2
0
0.2
0.4
d
17185
V
S
95 11339p2
rel
Figure 13. Vertical Directivity ϕy
Figure 14. Sensitivity vs. Supply Voltage
Suitable Data Format
The circuit of the TSOP311.. is designed so that unex- • Signals from fluorescent lamps with electronic bal-
pected output pulses due to noise or disturbance sig- last with high or low modulation
nals are avoided. A bandpass filter, an integrator ( see Figure 15 or Figure 16 ).
stage and an automatic gain control are used to sup-
press such disturbances.
The distinguishing mark between data signal and dis-
turbance signal are carrier frequency, burst length
and duty cycle.
The data signal should fulfill the following conditions:
• Carrier frequency should be close to center fre-
quency of the bandpass (e.g. 38 kHz).
IR Signal from fluorescent
• Burst length should be 6 cycles/burst or longer.
lamp with low modulation
• After each burst which is between 6 cycles and 70
cycles a gap time of at least 10 cycles is necessary.
5
0
10
15
20
16920
Time (ms)
• For each burst which is longer than 1.8 ms a corre-
sponding gap time is necessary at some time in the
data stream. This gap time should have at least the
same length as the burst.
Figure 15. IR Signal from Fluorescent Lamp with low Modulation
IR Signal from fluorescent
lamp with high modulation
• Up to 2200 short bursts per second can be received
continuously.
Some examples for suitable data formats are: NEC
Code, RC5 Code, RC6 Code, RCMM Code, RECS-
80 Code, R-2000 Code, Sony Code, Mitsubishi Code.
When a disturbance signal is applied to the
TSOP311.. it can still receive the data signal. How-
ever the sensitivity is reduced to that level that no
unexpected pulses will occur.
0
10
10
15
20
Some examples for such disturbance signals which
are suppressed by the TSOP311.. are:
16921
Time (ms)
Figure 16. IR Signal from Fluorescent Lamp with high Modulation
• DC light (e.g. from tungsten bulb or sunlight)
• Continuous signal at 38 kHz or at any other fre-
quency
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72
Document Number 84647
Rev. 1.1, 19-Jan-07
TSOP311..
Vishay Semiconductors
Package Dimensions in millimeters
96 12116
Document Number 84647
Rev. 1.1, 19-Jan-07
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73
TSOP311..
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
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74
Document Number 84647
Rev. 1.1, 19-Jan-07
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
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