TSOP34433SI1F [VISHAY]
Photo IC, LOGIC OUTPUT PHOTO DETECTOR, LEAD FREE, PLASTIC PACKAGE-3;
| 型号： | TSOP34433SI1F |
| 厂家： | 
VISHAY |
| 描述： | Photo IC, LOGIC OUTPUT PHOTO DETECTOR, LEAD FREE, PLASTIC PACKAGE-3 远程控制 输出元件 光电 |
| 文件： | 总8页 (文件大小：198K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TSOP344..SI1F
Vishay Semiconductors
IR Receiver Modules for Remote Control Systems
Description
The TSOP344..SI1F - series are miniaturized receiv-
ers for infrared remote control systems. PIN diode
and preamplifier are assembled on lead frame, the
epoxy package is designed as IR filter.
The demodulated output signal can directly be
decoded by a microprocessor. TSOP344..SI1F is a
standard IR remote control receiver series for 3 V
supply voltage with excellent suppression of distur-
bance signals.
1
2
16657
3
Features
• Photo detector and preamplifier in
one package
Mechanical Data
Pinning:
1 = OUT, 2 = GND, 3 = V
S
• Internal filter for PCM frequency
e3
• Improved shielding against electrical
Parts Table
field disturbance
Part
TSOP34430SI1F
TSOP34433SI1F
TSOP34436SI1F
TSOP34437SI1F
TSOP34438SI1F
TSOP34440SI1F
TSOP34456SI1F
Carrier Frequency
• TTL and CMOS compatibility
• Output active low
30 kHz
33 kHz
36 kHz
36.7 kHz
38 kHz
40 kHz
56 kHz
• Supply voltage range: 2.7 V to 5.5 V
• Improved immunity against ambient light
• Enhanced suppression of disturbance signals by
special filtering
Block Diagram
Application Circuit
16833
17170
3
R1 = 100 Ω
Transmitter
TSOPxxxx
VS
with
VS
+VS
30 kΩ
C1
=
TSALxxxx
4.7 µF
1
µC
OUT
GND
OUT
Band Demo-
VO
Input
AGC
dulator
Pass
GND
2
R1 + C1 recommended to suppress power supply
disturbances.
PIN
GND
Control
Circuit
The output voltage should not be hold continuously at
=
a voltage below VO 2.0 V by the external circuit.
Document Number 84701
Rev. 1.1, 22-Feb-05
www.vishay.com
1
TSOP344..SI1F
Vishay Semiconductors
Absolute Maximum Ratings
Absolute Maximum Ratings
T
amb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
VS
Value
Unit
V
Supply Voltage
(Pin 3)
(Pin 3)
(Pin 1)
(Pin 1)
- 0.3 to + 6.0
Supply Current
IS
VO
IO
3
mA
V
Output Voltage
- 0.3 to VS + 0.3 V
Output Current
10
100
mA
°C
Junction Temperature
Storage Temperature Range
Operating Temperature Range
Power Consumption
Soldering Temperature
Tj
Tstg
Tamb
Ptot
Tsd
- 25 to + 85
- 25 to + 85
30
°C
°C
(Tamb ≤ 85 °C)
mW
°C
t ≤ 10 s, 1mm from case
260
Electrical and Optical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Ev = 0, VS = 3 V
Symbol
Min
0.7
Typ.
1.2
Max
1.5
Unit
mA
Supply Current (Pin 3)
ISD
ISH
VS
d
Ev = 40 klx, sunlight
1.3
mA
V
Supply Voltage
2.7
5.5
Transmission Distance
Ev = 0, test signal see fig.1,
35
m
IR diode TSAL6200,
IF = 250 mA
IOSL = 0.5 mA, Ee = 0.7 mW/m2,
test signal see fig. 1
Output Voltage Low (Pin 1)
VOSL
250
0.4
mV
mW/m2
mW/m2
mW/m2
mW/m2
Minimum Irradiance
(30 - 40 kHz)
V
S = 3 V
Pulse width tolerance:
pi - 5/fo < tpo < tpi + 6/fo,
Ee min
0.2
0.3
t
test signal see fig.1
VS = 3 V
Minimum Irradiance (56 kHz)
Ee min
Ee min
Ee min
0.5
0.5
0.6
Pulse width tolerance:
t
pi - 5/fo < tpo < tpi + 6/fo,
test signal see fig.1
VS = 5 V
Minimum Irradiance
(30 - 40 kHz)
0.35
0.45
Pulse width tolerance:
t
pi - 5/fo < tpo < tpi + 6/fo,
test signal see fig.1
VS = 5 V
Minimum Irradiance (56 kHz)
Pulse width tolerance:
t
pi - 5/fo < tpo < tpi + 6/fo,
test signal see fig.1
tpi - 5/fo < tpo < tpi + 6/fo,
test signal see fig. 1
W/m2
deg
Maximum Irradiance
Directivity
Ee max
30
Angle of half transmission
distance
ϕ1/2
45
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2
Document Number 84701
Rev. 1.1, 22-Feb-05
TSOP344..SI1F
Vishay Semiconductors
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
Optical Test Signal
(IR diode TSAL6200, I = 0.4 A, 30 pulses, f = f , T = 10 ms)
E
e
F
0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
Ton
t
t
pi
*
T
Toff
* t w 10/fo is recommended for optimal function
pi
16110
Output Signal
V
V
O
1 )
2 )
l = 950 nm,
optical test signal, fig.3
7/f < t < 15/f
0
0
d
OH
t –5/f < t < t +6/f
pi
0
po
pi
0
V
OL
0.1
1.0
10.0 100.0 1000.010000.0
2 )
1 )
t
t
po
t
d
2
16909
E
e
– Irradiance ( mW/m
)
Figure 1. Output Function
Figure 4. Output Pulse Diagram
1.2
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
Output Pulse
1.0
0.8
0.6
0.4
0.2
0.0
Input Burst Duration
f = f "5%
0
l = 950 nm,
optical test signal, fig.1
Df ( 3dB ) = f /10
0
0.7
0.9
1.1
1.3
0.1
1.0
10.0 100.0 1000.010000.0
16925
f/f – Relative Frequency
0
2
16908
E
e
– Irradiance ( mW/m
)
Figure 2. Pulse Length and Sensitivity in Dark Ambient
Figure 5. Frequency Dependence of Responsivity
Optical Test Signal
E
e
4.0
Correlation with ambient light sources:
3.5
2
10W/m ^1.4klx (Std.illum.A,T=2855K)
2
10W/m ^8.2klx (Daylight,T=5900K)
3.0
t
600 ms
600 ms
2.5
2.0
T = 60 ms
Output Signal, ( see Fig.4 )
1.5
94 8134
Ambient, l = 950 nm
V
V
O
1.0
0.5
0.0
OH
OL
V
0.01
0.10
1.00
10.00
100.00
t
T
on
T
off
2
16911
E – Ambient DC Irradiance (W/m )
Figure 3. Output Function
Figure 6. Sensitivity in Bright Ambient
Document Number 84701
Rev. 1.1, 22-Feb-05
www.vishay.com
3
TSOP344..SI1F
Vishay Semiconductors
2.0
0.6
0.5
0.4
0.3
0.2
0.1
0.0
Sensitivity in dark ambient
f = f
o
1.5
1.0
0.5
0.0
f = 10 kHz
f = 1 kHz
f = 100 Hz
0.1
DV
1.0
10.0
100.0
1000.0
–30 –15
0
15 30 45 60 75 90
16912
– AC Voltage on DC Supply Voltage (mV)
16918
T
amb
– Ambient Temperature ( qC )
sRMS
Figure 7. Sensitivity vs. Supply Voltage Disturbances
Figure 10. Sensitivity vs. Ambient Temperature
1.0
2.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
f(E) = f
0
1.6
1.2
0.8
0.4
0.0
2.0
0.0
0.4
0.8
1.2
1.6
750
850
950
1050
1150
E – Field Strength of Disturbance ( kV/m )
94 8147
18998
λ - Wavelength ( nm )
Figure 8. Sensitivity vs. Electric Field Disturbances
Figure 11. Relative Spectral Sensitivity vs. Wavelength
0.4
0.3
0.2
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.1
2
f = 38 kHz, E = 2 mW/m
e
0.0
0.0
10
30
50
70
90
110
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
16917
Burst Length ( number of cycles / burst )
17185
V – Supply Voltage ( V )
S
Figure 9. Max. Envelope Duty Cycle vs. Burstlength
Figure 12. Sensitivity vs. Supply Voltage
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4
Document Number 84701
Rev. 1.1, 22-Feb-05
TSOP344..SI1F
Vishay Semiconductors
• Signals from fluorescent lamps with electronic bal-
last with high or low modulation
(see Figure 14 or Figure 15).
0q
10q
20q
30q
40q
1.0
0.9
0.8
50q
60q
70q
80q
0.7
0.6
0.6
0.4
0.2
0
0.2
0.4
IR Signal from fluorescent
lamp with low modulation
d
– Relative Transmission Distance
96 12223p2
rel
Figure 13. Directivity
0
5
10
15
20
16920
Time ( ms )
Suitable Data Format
Figure 14. IR Signal from Fluorescent Lamp with low Modulation
The circuit of the TSOP344..SI1F is designed in that
way that unexpected output pulses due to noise or
disturbance signals are avoided. A bandpass filter, an
integrator stage and an automatic gain control are
used to suppress such disturbances.
IR Signal from fluorescent
lamp with high modulation
The distinguishing mark between data signal and dis-
turbance signal are carrier frequency, burst length
and duty cycle.
The data signal should fulfill the following conditions:
• Carrier frequency should be close to center fre-
quency of the bandpass (e.g. 38 kHz).
• Burst length should be 10 cycles/burst or longer.
• After each burst which is between 10 cycles and 35
cycles a gap time of at least 14 cycles is necessary.
0
5
10
15
20
16921
Time ( ms )
• For each burst which is longer than 0.9 ms a corre-
sponding gap time is necessary at some time in the
data stream. This gap time should be at least 7 times
longer than the burst.
Figure 15. IR Signal from Fluorescent Lamp with high Modulation
• Up to 400 short bursts per second can be received
continuously.
Some examples for suitable data format are: NEC
Code, Toshiba Micom Format, Sharp Code, RC5
Code, R-2000 Code.
When a disturbance signal is applied to the
TSOP344..SI1F it can still receive the data signal.
However the sensitivity is reduced to that level that no
unexpected pulses will occur.
Some examples for such disturbance signals which
are suppressed by the TSOP344..SI1F are:
• DC light (e.g. from tungsten bulb or sunlight)
• Continuous signal at 38 kHz or at any other fre-
quency
Document Number 84701
Rev. 1.1, 22-Feb-05
www.vishay.com
5
TSOP344..SI1F
Vishay Semiconductors
Package Dimensions in mm
16248
www.vishay.com
6
Document Number 84701
Rev. 1.1, 22-Feb-05
TSOP344..SI1F
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 84701
Rev. 1.1, 22-Feb-05
www.vishay.com
7
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
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