TSOP34437SB1 [VISHAY]

IR Receiver Modules for Remote Control Systems; 红外接收器模块的远程控制系统
TSOP34437SB1
型号: TSOP34437SB1
厂家: VISHAY    VISHAY
描述:

IR Receiver Modules for Remote Control Systems
红外接收器模块的远程控制系统

光电 光电集成电路 远程控制 输出元件
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TSOP344..SB1  
Vishay Semiconductors  
IR Receiver Modules for Remote Control Systems  
Description  
The TSOP344..SB1 - series are miniaturized receiv-  
ers for infrared remote control systems. PIN diode  
and preamplifier are assembled on lead frame, the  
epoxy package is designed as IR filter.  
The demodulated output signal can directly be  
decoded by a microprocessor. TSOP344..SB1 is a  
standard IR remote control receiver series for 3 V  
supply voltage with excellent suppression of distur-  
bance signals.  
1
16656  
2
3
Features  
• Photo detector and preamplifier in one  
package  
Mechanical Data  
Pinning:  
1 = OUT, 2 = GND, 3 = V  
S
• Internal filter for PCM frequency  
e3  
• Improved shielding against electrical  
Parts Table  
field  
Part  
TSOP34430SB1  
TSOP34433SB1  
TSOP34436SB1  
TSOP34437SB1  
TSOP34438SB1  
TSOP34440SB1  
TSOP34456SB1  
Carrier Frequency  
disturbance  
30 kHz  
• TTL and CMOS compatibility  
• Output active low  
• Supply voltage range: 2.7 V to 5.5 V  
• Improved immunity against ambient light  
33 kHz  
36 kHz  
36.7 kHz  
38 kHz  
40 kHz  
56 kHz  
Block Diagram  
Application Circuit  
16833  
3
17170  
VS  
R1 = 100  
30 k  
Transmitter  
TSOPxxxx  
with  
VS  
+VS  
1
OUT  
C1  
=
TSALxxxx  
4.7 µF  
Band Demo-  
Input  
AGC  
µC  
dulator  
Pass  
OUT  
GND  
VO  
2
GND  
PIN  
GND  
Control  
Circuit  
R1 + C1 recommended to suppress power supply  
disturbances.  
The output voltage should not be hold continuously at  
=
a voltage below VO 2.0 V by the external circuit.  
Document Number 82275  
Rev. 1.1, 28-Feb-05  
www.vishay.com  
1
TSOP344..SB1  
Vishay Semiconductors  
Absolute Maximum Ratings  
Absolute Maximum Ratings  
T
amb = 25 °C, unless otherwise specified  
Parameter  
Test condition  
Symbol  
VS  
Value  
Unit  
V
Supply Voltage  
(Pin 3)  
(Pin 3)  
(Pin 1)  
(Pin 1)  
- 0.3 to + 6.0  
Supply Current  
IS  
VO  
IO  
3
mA  
V
Output Voltage  
- 0.3 to VS + 0.3 V  
Output Current  
10  
100  
mA  
°C  
Junction Temperature  
Storage Temperature Range  
Operating Temperature Range  
Power Consumption  
Soldering Temperature  
Tj  
Tstg  
Tamb  
Ptot  
Tsd  
- 25 to + 85  
- 25 to + 85  
30  
°C  
°C  
(Tamb 85 °C)  
mW  
°C  
t 10 s, 1mm from case  
260  
Electrical and Optical Characteristics  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Test condition  
Ev = 0, VS = 3 V  
Symbol  
Min  
0.7  
Typ.  
1.2  
Max  
1.5  
Unit  
mA  
Supply Current (Pin 3)  
ISD  
ISH  
VS  
d
Ev = 40 klx, sunlight  
1.3  
mA  
V
Supply Voltage  
2.7  
5.5  
Transmission Distance  
Ev = 0, test signal see fig.1,  
35  
m
IR diode TSAL6200,  
IF = 250 mA  
IOSL = 0.5 mA, Ee = 0.7 mW/m2,  
test signal see fig. 1  
Output Voltage Low (Pin 1)  
VOSL  
250  
0.4  
mV  
mW/m2  
mW/m2  
mW/m2  
mW/m2  
Minimum Irradiance  
(30 - 40 kHz)  
V
S = 3 V  
Pulse width tolerance:  
pi - 5/fo < tpo < tpi + 6/fo,  
Ee min  
0.2  
0.3  
t
test signal see fig.1  
VS = 3 V  
Minimum Irradiance (56 kHz)  
Ee min  
Ee min  
Ee min  
0.5  
0.5  
0.6  
Pulse width tolerance:  
t
pi - 5/fo < tpo < tpi + 6/fo,  
test signal see fig.1  
VS = 5 V  
Minimum Irradiance  
(30 - 40 kHz)  
0.35  
0.45  
Pulse width tolerance:  
t
pi - 5/fo < tpo < tpi + 6/fo,  
test signal see fig.1  
VS = 5 V  
Minimum Irradiance (56 kHz)  
Pulse width tolerance:  
t
pi - 5/fo < tpo < tpi + 6/fo,  
test signal see fig.1  
tpi - 5/fo < tpo < tpi + 6/fo,  
test signal see fig. 1  
W/m2  
deg  
Maximum Irradiance  
Directivity  
Ee max  
30  
Angle of half transmission  
distance  
ϕ1/2  
45  
www.vishay.com  
2
Document Number 82275  
Rev. 1.1, 28-Feb-05  
TSOP344..SB1  
Vishay Semiconductors  
Typical Characteristics (Tamb = 25 °C unless otherwise specified)  
Optical Test Signal  
(IR diode TSAL6200, I = 0.4 A, 30 pulses, f = f , T = 10 ms)  
E
e
F
0
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
Ton  
t
t
pi  
*
T
Toff  
* t w 10/fo is recommended for optimal function  
pi  
16110  
Output Signal  
V
V
O
1 )  
2 )  
l = 950 nm,  
optical test signal, fig.3  
7/f < t < 15/f  
0
0
d
OH  
t 5/f < t < t +6/f  
pi  
0
po  
pi  
0
V
OL  
0.1  
1.0  
10.0 100.0 1000.010000.0  
2 )  
1 )  
t
t
po  
t
d
2
16909  
E
e
Irradiance ( mW/m  
)
Figure 1. Output Function  
Figure 4. Output Pulse Diagram  
1.2  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
Output Pulse  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
Input Burst Duration  
f = f "5%  
0
l = 950 nm,  
optical test signal, fig.1  
Df ( 3dB ) = f /10  
0
0.7  
0.9  
1.1  
1.3  
0.1  
1.0  
10.0 100.0 1000.010000.0  
16925  
f/f – Relative Frequency  
0
2
16908  
E
e
Irradiance ( mW/m  
)
Figure 2. Pulse Length and Sensitivity in Dark Ambient  
Figure 5. Frequency Dependence of Responsivity  
Optical Test Signal  
E
e
4.0  
Correlation with ambient light sources:  
3.5  
2
10W/m ^1.4klx (Std.illum.A,T=2855K)  
2
10W/m ^8.2klx (Daylight,T=5900K)  
3.0  
t
600 ms  
600 ms  
2.5  
2.0  
T = 60 ms  
Output Signal, ( see Fig.4 )  
1.5  
94 8134  
Ambient, l = 950 nm  
V
V
O
1.0  
0.5  
0.0  
OH  
OL  
V
0.01  
0.10  
1.00  
10.00  
100.00  
t
T
on  
T
off  
2
16911  
E – Ambient DC Irradiance (W/m )  
Figure 3. Output Function  
Figure 6. Sensitivity in Bright Ambient  
Document Number 82275  
Rev. 1.1, 28-Feb-05  
www.vishay.com  
3
TSOP344..SB1  
Vishay Semiconductors  
2.0  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
Sensitivity in dark ambient  
f = f  
o
1.5  
1.0  
0.5  
0.0  
f = 10 kHz  
f = 1 kHz  
f = 100 Hz  
0.1  
DV  
1.0  
10.0  
100.0  
1000.0  
30 15  
0
15 30 45 60 75 90  
16912  
AC Voltage on DC Supply Voltage (mV)  
16918  
T
amb  
Ambient Temperature ( qC )  
sRMS  
Figure 7. Sensitivity vs. Supply Voltage Disturbances  
Figure 10. Sensitivity vs. Ambient Temperature  
1.2  
2.0  
f(E) = f  
0
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
1.6  
1.2  
0.8  
0.4  
0.0  
2.0  
0.0  
0.4  
0.8  
1.2  
1.6  
750  
850  
950  
1050  
1150  
E – Field Strength of Disturbance ( kV/m )  
94 8147  
16919  
λ - Wavelength ( nm )  
Figure 8. Sensitivity vs. Electric Field Disturbances  
Figure 11. Relative Spectral Sensitivity vs. Wavelength  
0.4  
0.3  
0.2  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.1  
2
f = 38 kHz, E = 2 mW/m  
e
0.0  
0.0  
10  
30  
50  
70  
90  
110  
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0  
16917  
Burst Length ( number of cycles / burst )  
17185  
V Supply Voltage ( V )  
S
Figure 9. Max. Envelope Duty Cycle vs. Burstlength  
Figure 12. Sensitivity vs. Supply Voltage  
www.vishay.com  
4
Document Number 82275  
Rev. 1.1, 28-Feb-05  
TSOP344..SB1  
Vishay Semiconductors  
• Signals from fluorescent lamps with electronic bal-  
last with high or low modulation  
(see Figure 14 or Figure 15).  
0q  
10q  
20q  
30q  
40q  
1.0  
0.9  
0.8  
50q  
60q  
70q  
80q  
0.7  
0.6  
0.6  
0.4  
0.2  
0
0.2  
0.4  
IR Signal from fluorescent  
lamp with low modulation  
d
– Relative Transmission Distance  
96 12223p2  
rel  
Figure 13. Directivity  
0
5
10  
15  
20  
16920  
Time ( ms )  
Suitable Data Format  
Figure 14. IR Signal from Fluorescent Lamp with low Modulation  
The circuit of the TSOP344..SB1 is designed in that  
way that unexpected output pulses due to noise or  
disturbance signals are avoided. A bandpass filter, an  
integrator stage and an automatic gain control are  
used to suppress such disturbances.  
IR Signal from fluorescent  
lamp with high modulation  
The distinguishing mark between data signal and dis-  
turbance signal are carrier frequency, burst length  
and duty cycle.  
The data signal should fulfill the following conditions:  
• Carrier frequency should be close to center fre-  
quency of the bandpass (e.g. 38 kHz).  
• Burst length should be 10 cycles/burst or longer.  
• After each burst which is between 10 cycles and 35  
cycles a gap time of at least 14 cycles is necessary.  
0
5
10  
15  
20  
16921  
Time ( ms )  
• For each burst which is longer than 0.9 ms a corre-  
sponding gap time is necessary at some time in the  
data stream. This gap time should be at least 7 times  
longer than the burst.  
Figure 15. IR Signal from Fluorescent Lamp with high Modulation  
• Up to 400 short bursts per second can be received  
continuously.  
Some examples for suitable data format are: NEC  
Code, Toshiba Micom Format, Sharp Code, RC5  
Code, R-2000 Code.  
When a disturbance signal is applied to the  
TSOP344..SB1 it can still receive the data signal.  
However the sensitivity is reduced to that level that no  
unexpected pulses will occur.  
Some examples for such disturbance signals which  
are suppressed by the TSOP344..SB1 are:  
• DC light (e.g. from tungsten bulb or sunlight)  
• Continuous signal at 38 kHz or at any other fre-  
quency  
Document Number 82275  
Rev. 1.1, 28-Feb-05  
www.vishay.com  
5
TSOP344..SB1  
Vishay Semiconductors  
Package Dimensions in mm  
16777  
www.vishay.com  
6
Document Number 82275  
Rev. 1.1, 28-Feb-05  
TSOP344..SB1  
Vishay Semiconductors  
Ozone Depleting Substances Policy Statement  
It is the policy of Vishay Semiconductor GmbH to  
1. Meet all present and future national and international statutory requirements.  
2. Regularly and continuously improve the performance of our products, processes, distribution and  
operatingsystems with respect to their impact on the health and safety of our employees and the public, as  
well as their impact on the environment.  
It is particular concern to control or eliminate releases of those substances into the atmosphere which are  
known as ozone depleting substances (ODSs).  
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs  
and forbid their use within the next ten years. Various national and international initiatives are pressing for an  
earlier ban on these substances.  
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use  
of ODSs listed in the following documents.  
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments  
respectively  
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental  
Protection Agency (EPA) in the USA  
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.  
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting  
substances and do not contain such substances.  
We reserve the right to make changes to improve technical design  
and may do so without further notice.  
Parameters can vary in different applications. All operating parameters must be validated for each  
customer application by the customer. Should the buyer use Vishay Semiconductors products for any  
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all  
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal  
damage, injury or death associated with such unintended or unauthorized use.  
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany  
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423  
Document Number 82275  
Rev. 1.1, 28-Feb-05  
www.vishay.com  
7

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