TSOP34837SS1F [VISHAY]
Photo IC, LOGIC OUTPUT PHOTO DETECTOR, ROHS COMPLIANT, PLASTIC PACKAGE-3;
| 型号： | TSOP34837SS1F |
| 厂家： | 
VISHAY |
| 描述： | Photo IC, LOGIC OUTPUT PHOTO DETECTOR, ROHS COMPLIANT, PLASTIC PACKAGE-3 远程控制 输出元件 光电 |
| 文件： | 总8页 (文件大小：148K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TSOP348..SS1F
Vishay Semiconductors
IR Receiver Modules for Remote Control Systems
Description
The TSOP348..SS1F - series are miniaturized receiv-
ers for infrared remote control systems. PIN diode
and preamplifier are assembled on lead frame, the
epoxy package is designed as IR filter.
The demodulated output signal can directly be
decoded by a microprocessor. TSOP348..SS1F is the
standard IR remote control receiver series for 3 V
supply voltage, supporting all major transmission
codes.
1
2
3
16672
Features
• Photo detector and preamplifier in one
package
Mechanical Data
Pinning:
1 = OUT, 2 = GND, 3 = V
S
• Internal filter for PCM frequency
e3
• Improved shielding against electrical
Parts Table
field disturbance
Part
TSOP34830SS1F
TSOP34833SS1F
TSOP34836SS1F
TSOP34837SS1F
TSOP34838SS1F
TSOP34840SS1F
TSOP34856SS1F
Carrier Frequency
• TTL and CMOS compatibility
• Output active low
• Supply voltage: 2.7 V to 5.5 V
• Improved immunity against ambient light
• Lead (Pb)-free component
30 kHz
33 kHz
36 kHz
36.7 kHz
38 kHz
40 kHz
56 kHz
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
• Enhanced suspression of disturbance signals by
special filtering
Block Diagram
Application Circuit
17170
16833
R1= 100 Ω
Transmitter
TSOPxxxx
3
with
VS
+ VS
GND
C1=
4.7µF
V S
TSALxxxx
30 kΩ
µC
1
OUT
VO
OUT
Band
Pass
Demo-
dulator
GND
Input
AGC
2
R1 and C1 recommended to suppress power supply
disturbances. The output voltage should not be
hold continuously at a voltage below VO = 2.0 V
by the external circuit.
PIN
Control Circuit
GND
Document Number 81450
Rev. 1.0, 30-Aug-06
www.vishay.com
1
TSOP348..SS1F
Vishay Semiconductors
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Supply Voltage
Test condition
Symbol
VS
Value
Unit
V
(Pin 3)
(Pin 3)
(Pin 1)
- 0.3 to + 6.0
Supply Current
Output Voltage
IS
3
mA
V
VO
- 0.3 to
(VS + 0.3)
Output Current
(Pin 1)
IO
Tj
10
100
mA
°C
Junction Temperature
Storage Temperature Range
Operating Temperature Range
Power Consumption
Tstg
Tamb
Ptot
Tsd
- 25 to + 85
- 25 to + 85
30
°C
°C
(Tamb ≤ 85 °C)
mW
°C
Soldering Temperature
t ≤ 10 s, 1 mm from case
260
Electrical and Optical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Min
0.7
Typ.
1.2
Max
1.5
Unit
mA
Supply Current (Pin 3)
Ev = 0
ISD
ISH
VS
d
Ev = 40 klx, sunlight
1.3
mA
V
Supply Voltage
2.7
5.5
Transmission Distance
Ev = 0, test signal see fig. 1,
35
m
IR diode TSAL6200,
IF = 250 mA
IOSL = 0.5 mA, Ee = 0.7 mW/m2,
test signal see fig. 1
Output Voltage Low (Pin 1)
VOSL
250
0.4
mV
mW/m2
mW/m2
mW/m2
mW/m2
Minimum Irradiance
(30 - 40 kHz)
V
S = 3 V
Pulse width tolerance:
pi - 5/fo < tpo < tpi + 6/fo,
Ee min
0.2
0.3
t
test signal see fig. 1
VS = 3 V
Minimum Irradiance (56 kHz)
Ee min
Ee min
Ee min
0.5
0.5
0.6
Pulse width tolerance:
t
pi - 5/fo < tpo < tpi + 6/fo,
test signal see fig. 1
VS = 5 V
Minimum Irradiance
(30 - 40 kHz)
0.35
0.45
Pulse width tolerance:
t
pi - 5/fo < tpo < tpi + 6/fo,
test signal see fig. 1
VS = 5 V
Minimum Irradiance (56 kHz)
Pulse width tolerance:
t
pi - 5/fo < tpo < tpi + 6/fo,
test signal see fig. 1
tpi - 5/fo < tpo < tpi + 6/fo,
test signal see fig. 1
W/m2
deg
Maximum Irradiance
Directivity
Ee max
30
Angle of half transmission
distance
ϕ1/2
45
www.vishay.com
2
Document Number 81450
Rev. 1.0, 30-Aug-06
TSOP348..SS1F
Vishay Semiconductors
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
Optical Test Signal
(IR diode TSAL6200, I = 0.4 A, 30 pulses, f = f , T = 10 ms)
E
e
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
F
0
Ton
Toff
t
t
pi
*
T
* t
pi
10/fo is recommended for optimal function
16110
Output Signal
V
O
= 950 nm,
optical test signal, fig. 3
1 )
7/f < t < 15/f
0
0
d
V
OH
OL
2 )
t
pi
- 5/f < t < t + 6/f
0 po pi 0
V
0.1
1.0
10.0 100.0 1000.0 10000.0
2 )
1 )
t
t
po
t
d
16909
E - Irradiance (mW/m²)
e
Figure 1. Output Function
Figure 4. Output Pulse Diagram
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1.0
Output Pulse
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
Input Burst Duration
f = f
f (3 dB) = f /10
5 ꢀ
0
= 950 nm,
optical test signal, fig. 1
0
0.7
0.9
1.1
1.3
0.1
1.0
10.0 100.0 1000.0 10000.0
16925
f/f - Relative Frequency
0
16908
E
e
- Irradiance (mW/m²)
Figure 2. Pulse Length and Sensitivity in Dark Ambient
Figure 5. Frequency Dependence of Responsivity
Optical Test Signal
E
e
4.0
Correlation with ambient light sources:
3.5
2
10 W/m
10 W/m
1.4 klx(Std.illum.A,T= 2855 K)
8.2 klx(Daylight, T= 5900 K)
2
3.0
2.5
2.0
1.5
1.0
0.5
0.0
t
600 µs
600 µs
T = 60 ms
Output Signal, (see fig. 4)
94 8134
Ambient, = 950 nm
V
O
V
OH
OL
V
t
T
on
T
off
0.01
0.10
1.00
10.00
100.00
2
16911
E - Ambient DC Irradiance (W/m )
Figure 3. Output Function
Figure 6. Sensitivity in Bright Ambient
Document Number 81450
Rev. 1.0, 30-Aug-06
www.vishay.com
3
TSOP348..SS1F
Vishay Semiconductors
2.0
0.6
0.5
0.4
0.3
0.2
0.1
0.0
Sensitivity in dark ambient
f = f
o
1.5
1.0
0.5
0.0
f = 10 kHz
f = 1 kHz
f = 100 Hz
0.1
1.0
10.0
100.0
1000.0
- 30 - 15
0
15 30 45 60 75
90
16912
V
sRMS
- AC Voltage on DC Supply Voltage (mV)
16918
T
amb
- Ambient Temperature (°C)
Figure 7. Sensitivity vs. Supply Voltage Disturbances
Figure 10. Sensitivity vs. Ambient Temperature
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
2.0
f(E) = f
0
1.6
1.2
0.8
0.4
0.0
2.0
0.0
0.4
0.8
1.2
1.6
750
850
950
1050
1150
18998
λ - Wavelength (nm)
E - Field Strength of Disturbance (kV/m)
94 8147
Figure 8. Sensitivity vs. Electric Field Disturbances
Figure 11. Relative Spectral Sensitivity vs. Wavelength
0°
10°
20°
0.8
0.7
0.6
0.5
0.4
0.3
2
30°
40°
1.0
0.9
0.8
50°
60°
0.2
0.1
0.0
f = 38 kHz, E = 2 mW/m
e
70°
0.7
80°
0.6
0
20
40
60
80
100 120
0.6 0.4 0.2
0
0.2
0.4
16913
Burst Length (number of cycles/burst)
96 12223p2
d
rel - Relative Transmission Distance
Figure 9. Max. Envelope Duty Cycle vs. Burstlength
Figure 12. Directivity
www.vishay.com
Document Number 81450
Rev. 1.0, 30-Aug-06
4
TSOP348..SS1F
Vishay Semiconductors
• Continuous signal at 38 kHz or at any other fre-
quency
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
• Signals from fluorescent lamps with electronic bal-
last with high or low modulation
(see Figure 14 or Figure 15).
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
- Supply Voltage (V)
17185
V
S
Figure 13. Sensitivity vs. Supply Voltage
IR Signal from fluorescent
lamp with low modulation
0
5
10
15
20
Suitable Data Format
16920
Time (ms)
The circuit of the TSOP348..SS1F is designed in that
way that unexpected output pulses due to noise or
disturbance signals are avoided. A bandpass filter, an
integrator stage and an automatic gain control are
used to suppress such disturbances.
Figure 14. IR Signal from Fluorescent Lamp with low Modulation
The distinguishing mark between data signal and dis-
turbance signal are carrier frequency, burst length
and duty cycle.
IR Signal from fluorescent
lamp with high modulation
The data signal should fulfill the following conditions:
• Carrier frequency should be close to center fre-
quency of the bandpass (e.g. 38 kHz).
• Burst length should be 10 cycles/burst or longer.
• After each burst which is between 10 cycles and
70 cycles a gap time of at least 14 cycles is neces-
sary.
0
5
10
15
20
• For each burst which is longer than 1.8 ms a corre-
sponding gap time is necessary at some time in the
data stream. This gap time should be at least 4 times
longer than the burst.
16921
Time (ms)
Figure 15. IR Signal from Fluorescent Lamp with high Modulation
• Up to 800 short bursts per second can be received
continuously.
Some examples for suitable data format are: NEC
Code (repetitive pulse), NEC Code (repetitive data),
Toshiba Micom Format, Sharp Code, RC5 Code,
RC6 Code, R-2000 Code, Sony Code.
When a disturbance signal is applied to the
TSOP348..SS1F it can still receive the data signal.
However the sensitivity is reduced to that level that no
unexpected pulses will occur.
Some examples for such disturbance signals which
are suppressed by the TSOP348..SS1F are:
• DC light (e.g. from tungsten bulb or sunlight)
Document Number 81450
Rev. 1.0, 30-Aug-06
www.vishay.com
5
TSOP348..SS1F
Vishay Semiconductors
Package Dimensions in mm
16003
www.vishay.com
6
Document Number 81450
Rev. 1.0, 30-Aug-06
TSOP348..SS1F
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 81450
Rev. 1.0, 30-Aug-06
www.vishay.com
7
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
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