TSOP4136SS1BS12 [VISHAY]
IR Receiver Modules for Remote Control Systems; 红外接收器模块的远程控制系统型号: | TSOP4136SS1BS12 |
厂家: | VISHAY |
描述: | IR Receiver Modules for Remote Control Systems |
文件: | 总8页 (文件大小:257K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
TSOP41..SS1BS12
VISHAY
Vishay Semiconductors
IR Receiver Modules for Remote Control Systems
Description
The TSOP41..SS1BS12 - series are miniaturized
receivers for infrared remote control systems. PIN
diode and preamplifier are assembled on lead frame,
the epoxy package is designed as IR filter.
The demodulated output signal can directly be
decoded by a microprocessor. The main benefit is the
reliable function even in disturbed ambient and the
protection against uncontrolled output pulses.
16672
Features
Parts Table
• Photo detector and preamplifier in one package
• Internal filter for PCM frequency
Part
Carrier Frequency
• Improved shielding against electrical field distur-
bance
TSOP4130SS1BS12
TSOP4133SS1BS12
TSOP4136SS1BS12
TSOP4137SS1BS12
TSOP4138SS1BS12
TSOP4140SS1BS12
TSOP4156SS1BS12
30 kHz
33 kHz
36 kHz
• TTL and CMOS compatibility
• Output active low
36.7 kHz
38 kHz
40 kHz
56 kHz
• Low power consumption
• High immunity against ambient light
Special Features
• Enhanced data rate of 4000 bit/s
Application Circuit
• Operation with short bursts possible (≥ 6 cycles/
burst)
R1 = 100 Ω
Transmitter
TSOPxxxx
Block Diagram
with
VS
+VS
C1
=
TSALxxxx
4.7 µF
µC
OUT
GND
3
VO
GND
VS
25 kΩ
1
R1 + C1 recommended to suppress power supply
disturbances.
OUT
Band Demo-
Input
AGC
dulator
Pass
The output voltage should not be hold continuously at
=
2
a voltage below VO 3.3 V by the external circuit.
PIN
GND
Control
Circuit
Document Number 82138
Rev. 2, 15-Oct-2002
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TSOP41..SS1BS12
Vishay Semiconductors
VISHAY
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
VS
Value
Unit
V
Supply Voltage
(Pin 2)
- 0.3 to +
6.0
Supply Current
Output Voltage
(Pin 2)
(Pin 1)
IS
5
mA
V
VO
- 0.3 to +
6.0
Output Current
(Pin 1)
IO
Tj
5
100
mA
°C
Junction Temperature
Storage Temperature Range
Operating Temperature Range
Power Consumption
Tstg
Tamb
Ptot
Tsd
- 25 to + 85
- 25 to + 85
50
°C
°C
(Tamb ≤ 85 °C)
mW
°C
Soldering Temperature
t ≤ 10 s, 1 mm from case
260
Electrical and Optical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
VS = 5 V, Ev = 0
Symbol
ISD
Min
0.8
Typ.
1.1
Max
1.5
Unit
Supply Current (Pin 2)
mA
mA
V
VS = 5 V, Ev = 40 klx, sunlight
ISH
VS
d
1.4
Supply Voltage (Pin 2)
Transmission Distance
4.5
5.5
Ev = 0, test signal see fig.3, IR
diode TSAL6200, IF = 250 mA
35
m
IOL = 0.5 mA,Ee = 0.7 mW/m2, f =
fo, test signal see fig. 1
Output Voltage Low (Pin 1)
VOL
250
mV
mW/m2
mW/m2
Irradiance (30 - 40 kHz)
Irradiance (56 kHz)
Pulse width tolerance: tpi - 5/fo < tpo
< tpi + 6/fo, test signal see fig.3
Ee min
Ee min
0.2
0.3
0.4
0.5
Pulse width tolerance: tpi - 5/fo < tpo
< tpi + 6/fo, test signal see fig.3
W/m2
deg
Irradiance
Directivity
Test signal see fig. 1
Ee max
30
Angle of half transmission distance
ϕ1/2
45
Typical Characteristics (T
= 25°C unless otherwise specified)
amb
Optical Test Signal
E
e
(IR diode TSAL6200, I =0.4 A, N=6 pulses, f=f , T=10 ms)
F
0
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
Output Pulse
t
t
*)
pi
T
*) t w 6/fo is recommended for optimal function
Output Signal
pi
Input Burst Duration
14337
V
V
= 950 nm,
optical test signal, fig.1
O
1 )
3/f < t < 9/f
0
0
d
2 )
t
– 4/f < t < t + 6/f
pi
0
po
pi
0
OH
OL
0.1
1.0
10.0 100.0 1000.010000.0
2
V
1 )
2 )
t
t
d
t
po
16907
E – Irradiance ( mW/m )
e
Figure 1. Output Function
Figure 2. Pulse Length and Sensitivity in Dark Ambient
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Document Number 82138
Rev. 2, 15-Oct-2002
TSOP41..SS1BS12
VISHAY
Vishay Semiconductors
Optical Test Signal
E
e
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Correlation with ambient light sources:
2
10W/m ^1.4klx (Std.illum.A,T=2855K)
2
10W/m ^8.2klx (Daylight,T=5900K)
t
600
s
600 s
T = 60 ms
Output Signal, ( see Fig.4 )
94 8134
Ambient, = 950 nm
V
O
V
OH
V
OL
0.01
0.10
1.00
10.00
100.00
t
T
on
T
off
2
16911
E – Ambient DC Irradiance (W/m )
Figure 3. Output Function
Figure 6. Sensitivity in Bright Ambient
2.0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
f = f
o
Ton
Toff
1.5
1.0
0.5
0.0
f = 10 kHz
f = 1 kHz
= 950 nm,
optical test signal, fig.3
f = 100 Hz
0.1
1.0
10.0 100.0 1000.010000.0
2
0.1
1.0
10.0
100.0
1000.0
16912
16910
E
e
– Irradiance ( mW/m
)
V
sRMS
– AC Voltage on DC Supply Voltage (mV)
Figure 4. Output Pulse Diagram
Figure 7. Sensitivity vs. Supply Voltage Disturbances
1.2
2.0
1.0
0.8
0.6
0.4
0.2
0.0
f(E) = f
0
1.6
1.2
0.8
f = f "5%
0
0.4
0.0
f ( 3dB ) = f /7
0
2.0
E – Field Strength of Disturbance ( kV/m )
0.0
0.4
0.8
1.2
1.6
0.7
0.9
1.1
1.3
16926
f/f – Relative Frequency
0
94 8147
Figure 5. Frequency Dependence of Responsivity
Figure 8. Sensitivity vs. Electric Field Disturbances
Document Number 82138
Rev. 2, 15-Oct-2002
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TSOP41..SS1BS12
Vishay Semiconductors
VISHAY
0q
10q
20q
1.0
0.9
0.8
0.7
0.6
0.5
0.4
30q
40q
1.0
0.9
0.8
50q
60q
0.3
2
f = 38 kHz, E = 2 mW/m
e
70q
80q
0.2
0.1
0.0
0.7
0.6
0
20
40
60
80
100 120
0.6
0.4
0.2
0
0.2
0.4
16914
16918
16919
d
– Relative Transmission Distance
Burst Length ( number of cycles / burst )
96 12223p2
rel
Figure 9. Max. Envelope Duty Cycle vs. Burstlength
Figure 12. Directivity
Suitable Data Format
0.6
The circuit of the TSOP41..SS1BS12 is designed in
that way that unexpected output pulses due to noise
or disturbance signals are avoided. A bandpassfilter,
an integrator stage and an automatic gain control are
used to suppress such disturbances.
Sensitivity in dark ambient
0.5
0.4
0.3
0.2
0.1
0.0
The distinguishing mark between data signal and dis-
turbance signal are carrier frequency, burst length
and duty cycle.
The data signal should fulfill the following conditions:
• Carrier frequency should be close to center fre-
quency of the bandpass (e.g. 38 kHz).
–30 –15
0
15 30 45 60 75 90
T
amb
– Ambient Temperature ( qC )
• Burst length should be 6 cycles/burst or longer.
• After each burst which is between 6 cycles and 70
cycles a gap time of at least 10 cycles is necessary.
Figure 10. Sensitivity vs. Ambient Temperature
• For each burst which is longer than 1.8 ms a corre-
sponding gap time is necessary at some time in the
data stream. This gap time should have at least same
length as the burst.
1.2
1.0
0.8
0.6
0.4
0.2
0.0
• Up to 2200 short bursts per second can be received
continuously.
Some examples for suitable data format are: NEC
Code, Toshiba Micom Format, Sharp Code, RC5
Code, RC6 Code, RCMM Code, R-2000 Code,
RECS-80 Code.
When a disturbance signal is applied to the
TSOP41..SS1BS12 it can still receive the data signal.
However the sensitivity is reduced to that level that no
unexpected pulses will occure.
750
850
950
1050
1150
– Wavelength ( nm )
Figure 11. Relative Spectral Sensitivity vs. Wavelength
Some examples for such disturbance signals which
are suppressed by the TSOP41..SS1BS12 are:
&bulllet; DC light (e.g. from tungsten bulb or sunlight)
&bulllet; Continuous signal at 38 kHz or at any other
frequency
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Document Number 82138
Rev. 2, 15-Oct-2002
4
TSOP41..SS1BS12
VISHAY
Vishay Semiconductors
&bulllet; Signals from fluorescent lamps with elec-
tronic ballast (an example of the signal modulation is
in the figure below).
IR Signal from fluorescent
lamp with low modulation
0
5
10
15
20
16920
Time ( ms )
Figure 13. IR Signal from Fluorescent Lamp with low Modulation
Document Number 82138
Rev. 2, 15-Oct-2002
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TSOP41..SS1BS12
Vishay Semiconductors
VISHAY
Package Dimensions in mm
16003
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Document Number 82138
Rev. 2, 15-Oct-2002
TSOP41..SS1BS12
VISHAY
Vishay Semiconductors
Labeling:
Barcode-label see 5.6.4
Kraft paper
Reel
Tape
Code 12
Adhesive tape
Tape direction
Quantity per
:
Reel
(Mat.-No.1764)
1000
Ammopack
(Mat.-No.1763)
1000
17029
Document Number 82138
Rev. 2, 15-Oct-2002
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TSOP41..SS1BS12
Vishay Semiconductors
VISHAY
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further
notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
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Document Number 82138
Rev. 2, 15-Oct-2002
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