TSOP4838SO1 [VISHAY]
Photo IC,;
| 型号： | TSOP4838SO1 |
| 厂家： | 
VISHAY |
| 描述： | Photo IC, |
| 文件： | 总7页 (文件大小：270K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TSOP48..SO1
Vishay Semiconductors
VISHAY
IR Receiver Modules for Remote Control Systems
Description
The TSOP48..SO1 - series are miniaturized receivers
for infrared remote control systems. PIN diode and
preamplifier are assembled on lead frame, the epoxy
package is designed as IR filter.
The demodulated output signal can directly be
decoded by a microprocessor. TSOP48..SO1 is the
standard IR remote control receiver series, support-
ing all major transmission codes.
Features
Parts Table
• Photo detector and preamplifier in one package
• Internal filter for PCM frequency
Part
TSOP4830SO1
TSOP4833SO1
TSOP4836SO1
TSOP4837SO1
TSOP4838SO1
TSOP4840SO1
TSOP4856SO1
Carrier Frequency
• Improved shielding against electrical field distur-
bance
30 kHz
33 kHz
36 kHz
• TTL and CMOS compatibility
• Output active low
36.7 kHz
38 kHz
40 kHz
56 kHz
• Low power consumption
Special Features
• Improved immunity against ambient light
• Suitable burst length ≥ 10 cycles/burst
Application Circuit
Block Diagram
R1 = 100 Ω
Transmitter
TSOPxxxx
with
VS
+VS
3
C1
=
TSALxxxx
4.7 µF
VS
µC
30 kΩ
OUT
GND
VO
1
OUT
GND
Band Demo-
Input
AGC
dulator
Pass
R1 + C1 recommended to suppress power supply
disturbances.
2
PIN
GND
Control
Circuit
The output voltage should not be hold continuously at
a voltage below VO 3.3 V by the external circuit.
=
Document Number 82093
Rev. 6, 15-Oct-2002
www.vishay.com
1
TSOP48..SO1
Vishay Semiconductors
VISHAY
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
VS
Value
Unit
V
Supply Voltage
(Pin 2)
- 0.3 to +
6.0
Supply Current
Output Voltage
(Pin 2)
(Pin 1)
IS
5
mA
V
VO
- 0.3 to +
6.0
Output Current
(Pin 1)
IO
Tj
5
100
mA
°C
Junction Temperature
Storage Temperature Range
Operating Temperature Range
Power Consumption
Tstg
Tamb
Ptot
Tsd
- 25 to + 85
- 25 to + 85
50
°C
°C
(Tamb ≤ 85 °C)
mW
°C
Soldering Temperature
t ≤ 10 s, 1 mm from case
260
Electrical and Optical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
VS = 5 V, Ev = 0
Symbol
ISD
Min
0.8
Typ.
1.2
Max
1.5
Unit
Supply Current (Pin 3)
mA
mA
m
VS = 5 V, Ev = 40 klx, sunlight
ISH
d
1.5
35
Transmission Distance
Ev = 0, test signal see fig.1, IR
diode TSAL6200, IF = 250 mA
Supply Voltage
VS
4.5
5.5
V
IOSL = 0.5 mA, Ee = 0.7 mW/m2,
test signal see fig. 1
Output Voltage Low (Pin 3)
VOSL
250
mV
mW/m2
mW/m2
Irradiance (56 kHz)
Pulse width tolerance: tpi - 5/fo < tpo
< tpi + 6/fo, test signal see fig.1
Ee min
Ee min
0.3
0.2
0.5
0.4
Irradiance (30-40 kHz)
Pulse width tolerance: tpi - 5/fo < tpo
< tpi + 6/fo, test signal see fig.1
W/m2
deg
Irradiance
Directivity
tpi - 5/fo < tpo < tpi + 6/fo, test signal
see fig. 1
Ee max
30
Angle of half transmission distance
ϕ1/2
45
Typical Characteristics (T
= 25°C unless otherwise specified)
amb
Optical Test Signal
(IR diode TSAL6200, I = 0.4 A, 30 pulses, f = f , T = 10 ms)
E
e
F
0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
Output Pulse
Input Burst Duration
t
t
pi
*
T
* t w 10/fo is recommended for optimal function
pi
16110
Output Signal
V
V
O
1 )
2 )
= 950 nm,
optical test signal, fig.1
7/f < t < 15/f
0
0
d
OH
t –5/f < t < t +6/f
pi
0
po
pi
0
V
OL
0.1
1.0
10.0 100.0 1000.010000.0
2
2 )
1 )
t
t
po
t
d
16908
E – Irradiance ( mW/m )
e
Figure 1. Output Function
Figure 2. Pulse Length and Sensitivity in Dark Ambient
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2
Document Number 82093
Rev. 6, 15-Oct-2002
TSOP48..SO1
Vishay Semiconductors
VISHAY
Optical Test Signal
E
e
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Correlation with ambient light sources:
2
10W/m ^1.4klx (Std.illum.A,T=2855K)
2
10W/m ^8.2klx (Daylight,T=5900K)
t
600
s
600 s
T = 60 ms
Output Signal, ( see Fig.4 )
94 8134
Ambient, = 950 nm
V
O
V
OH
V
OL
0.01
0.10
1.00
10.00
100.00
t
T
on
T
off
2
16911
E – Ambient DC Irradiance (W/m )
Figure 3. Output Function
Figure 6. Sensitivity in Bright Ambient
2.0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
f = f
o
Ton
Toff
1.5
1.0
0.5
0.0
f = 10 kHz
f = 1 kHz
= 950 nm,
optical test signal, fig.3
f = 100 Hz
0.1
1.0
10.0 100.0 1000.010000.0
2
0.1
1.0
10.0
100.0
1000.0
16912
16909
E
e
– Irradiance ( mW/m
)
V
sRMS
– AC Voltage on DC Supply Voltage (mV)
Figure 4. Output Pulse Diagram
Figure 7. Sensitivity vs. Supply Voltage Disturbances
1.2
2.0
1.0
0.8
0.6
0.4
0.2
0.0
f(E) = f
0
1.6
1.2
0.8
f = f "5%
0
0.4
0.0
f ( 3dB ) = f /10
0
2.0
E – Field Strength of Disturbance ( kV/m )
0.0
0.4
0.8
1.2
1.6
0.7
0.9
1.1
1.3
16925
f/f – Relative Frequency
0
94 8147
Figure 5. Frequency Dependence of Responsivity
Figure 8. Sensitivity vs. Electric Field Disturbances
Document Number 82093
Rev. 6, 15-Oct-2002
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3
TSOP48..SO1
Vishay Semiconductors
VISHAY
0q
10q
20q
0.8
0.7
0.6
0.5
0.4
0.3
30q
40q
1.0
0.9
0.8
50q
60q
2
0.2
0.1
0.0
f = 38 kHz, E = 2 mW/m
e
70q
80q
0.7
0.6
0
20
40
60
80
100 120
0.6
0.4
0.2
0
0.2
0.4
16913
16918
16919
d
– Relative Transmission Distance
Burst Length ( number of cycles / burst )
96 12223p2
rel
Figure 9. Max. Envelope Duty Cycle vs. Burstlength
Figure 12. Directivity
Suitable Data Format
0.6
The circuit of the TSOP48..SO1 is designed in that
way that unexpected output pulses due to noise or
disturbance signals are avoided. A bandpassfilter, an
integrator stage and an automatic gain control are
used to suppress such disturbances.
Sensitivity in dark ambient
0.5
0.4
0.3
0.2
0.1
0.0
The distinguishing mark between data signal and dis-
turbance signal are carrier frequency, burst length
and duty cycle.
The data signal should fulfill the following conditions:
• Carrier frequency should be close to center fre-
quency of the bandpass (e.g. 38 kHz).
–30 –15
0
15 30 45 60 75 90
T
amb
– Ambient Temperature ( qC )
• Burst length should be 10 cycles/burst or longer.
• After each burst which is between 10 cycles and 70
cycles a gap time of at least 14 cycles is necessary.
Figure 10. Sensitivity vs. Ambient Temperature
• For each burst which is longer than 1.8 ms a corre-
sponding gap time is necessary at some time in the
data stream. This gap time should be at least 4 times
longer than the burst.
1.2
1.0
0.8
0.6
0.4
0.2
0.0
• Up to 800 short bursts per second can be received
continuously.
Some examples for suitable data format are: NEC
Code (repetitive pulse), NEC Code (repetitive data),
Toshiba Micom Format, Sharp Code, RC5 Code,
RC6 Code, R-2000 Code, Sony Code.
When a disturbance signal is applied to the
TSOP48..SO1 it can still receive the data signal. How-
ever the sensitivity is reduced to that level that no
unexpected pulses will occure.
750
850
950
1050
1150
– Wavelength ( nm )
Figure 11. Relative Spectral Sensitivity vs. Wavelength
Some examples for such disturbance signals which
are suppressed by the TSOP48..SO1 are:
• DC light (e.g. from tungsten bulb or sunlight)
• Continuous signal at 38 kHz or at any other fre-
quency
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Document Number 82093
Rev. 6, 15-Oct-2002
4
TSOP48..SO1
Vishay Semiconductors
VISHAY
• Signals from fluorescent lamps with electronic bal-
last with high or low modulation ( see Figure 13 or Fig-
ure 14 ).
IR Signal from fluorescent
lamp with low modulation
0
5
10
15
20
16920
Time ( ms )
Figure 13. IR Signal from Fluorescent Lamp with low Modulation
IR Signal from fluorescent
lamp with high modulation
0
5
10
15
20
16921
Time ( ms )
Figure 14. IR Signal from Fluorescent Lamp with high Modulation
Document Number 82093
Rev. 6, 15-Oct-2002
www.vishay.com
5
TSOP48..SO1
Vishay Semiconductors
VISHAY
Package Dimensions in mm
16134
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Document Number 82093
Rev. 6, 15-Oct-2002
TSOP48..SO1
Vishay Semiconductors
VISHAY
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further
notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 82093
Rev. 6, 15-Oct-2002
www.vishay.com
7
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