TSOP5136TT [VISHAY]
Photo IC,;
VISHAY 
TSOP51..
Vishay Semiconductors
Not for new designs
Photo Module for High Data Rates PCM Remote Control
Systems
Available Types For Different Carrier Frequencies
Type
fo
Type
fo
TSOP5130
TSOP5136
TSOP5138
TSOP5156
30 kHz
36 kHz
38 kHz
56 kHz
TSOP5133
TSOP5137
TSOP5140
33.0 kHz
36.7 kHz
40.0 kHz
Description
The TSOP51.. – series are miniaturized SMD–IR
Receiver Modules for infrared remote control systems.
PIN diode and preamplifier are assembled on lead
frame, the epoxy package is designed as IR filter.
The demodulated output signal can directly be
decoded by a microprocessor. TSOP51.. is the
standard IR remote control SMD–Receiver series,
supporting all major transmission codes.
16797
Features
D Photo detector and preamplifier in one package
D Internal filter for PCM frequency
D Continuous data transmission possible
D TTL and CMOS compatibility
D Output active low
D Enhanced data rate of 3500 bit/s
D Operation with short burst possible
(y6 cycles/burst)
D Taping available for topview and sideview
assembly
D Low power consumption
Block Diagramm
4
V
S
Control
Circuit
Input
30 kW
3
OUT
GND
PIN
Band
Pass
Demodu-
lator
AGC
1
16798
Document Number 82162
Rev. 2, 05–Nov–01
www.vishay.com
1 (10)
TSOP51..
Vishay Semiconductors
Not for new designs
Absolute Maximum Ratings
T
amb
= 25°C
Parameter
Supply Voltage
Supply Current
Output Voltage
Test Conditions
Symbol
Value
–0.3...6.0
5
–0.3...6.0
15
Unit
V
mA
V
mA
°C
°C
°C
mW
Pin 4
Pin 4
Pin 3
Pin 3
V
S
I
S
V
O
Output Current
I
O
Junction Temperature
Storage Temperature Range
Operating Temperature Range
Power Consumption
T
100
j
T
–40...+85
–25...+85
50
stg
T
amb
T
amb
x 85°C
P
tot
Basic Characteristics
T
amb
= 25°C
Parameter
Supply Current
Supply Current
Supply Voltage
Test Conditions
V = 5 V, E = 0
V = 5 V, E = 40 klx, sunlight
S v
Symbol Min. Typ. Max.
Unit
mA
mA
V
I
I
0.8
1.1
1.4
1.5
S
v
SD
SH
VS
d
4.5
5.5
Transmission Distance
E = 0, test signal see fig.7,
v
30
m
IR diode TSAL6200, I = 400 mA
F
2
Output Voltage Low (Pin 3) I
= 0.5 mA,E = 0.7 mW/m
V
250
0.6 mW/m
mV
OSL
e
OSL
2
2
Irradiance (30–40 kHz)
Pulse width tolerance:
E
0.5
0.6
e min
t – 5/f < t < t + 6/f ,
test signal see fig.8
pi
o
po
pi
o
Irradiance (56 kHz)
E
0.7 mW/m
e min
2
Irradiance
Directivity
t – 5/f < t < t + 6/f
Angle of half transmission distance
E
30
W/m
deg
pi
o
po
pi
o
e max
ϕ
±50
1/2
Application Circuit
100 W *)
+5V
4
*)
4.7 mF
TSOP51..
>10 kW
optional
TSAL62..
mC
3
2
1
**)
GND
16799
GND
*) recommended to suppress power supply disturbances
**) the output voltage should not be hold continuously at a voltage below 3.3V by the external circuit.
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2 (10)
Document Number 82162
Rev. 2, 05–Nov–01
TSOP51..
Vishay Semiconductors
Not for new designs
Suitable Data Format
The circuit of the TSOP51.. is designed in that way that Some examples for suitable data format are:
unexpected output pulses due to noise or disturbance NEC Code, Toshiba Micom Format, Sharp Code,
signals are avoided. A bandpassfilter, an integrator RC5 Code, RC6 Code, RCMM Code, R–2000 Code,
stage and an automatic gain control are used to RECS–80 Code.
suppress such disturbances.
The distinguishing mark between data signal and
When a disturbance signal is applied to the TSOP51..
disturbance signal are carrier frequency, burst length
it can still receive the data signal. However the
and duty cycle.
sensitivity is reduced to that level that no unexpected
pulses will occure.
The data signal should fullfill the following condition:
D Carrier frequency should be close to center
frequency of the bandpass (e.g. 38kHz).
Some examples for such disturbance signals which
are suppressed by the TSOP51.. are:
D Burst length should be 6 cycles/burst or longer.
D After each burst which is between 6 cycles and
70 cycles a gap time of at least 10 cycles is
neccessary.
D DC light (e.g. from tungsten bulb or sunlight)
D Continuous signal at 38kHz or at any other
D For each burst which is longer than 1.8 ms a
corresponding gap time is necessary at some time
in the data stream. This gap time should have at
least same length as the burst.
frequency
D Signals from fluorescent lamps with electronic
ballast (an example of the signal modulation is in
the figure below).
D Up to 2200 short bursts per second can be received
continuously.
0
5
10
15
20
time [ms]
Document Number 82162
Rev. 2, 05–Nov–01
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3 (10)
TSOP51..
Vishay Semiconductors
Not for new designs
Typical Characteristics (Tamb = 25_C, unless otherwise specified)
1.0
0.8
0.6
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.4
0.2
f = f "5%
0
Df ( 3dB ) = f /7
0
0.0
1.3
0.7
0.8
0.9
1.0
1.1
1.2
0.0
0.5
1.0
1.5
2.0
16802
E – Field Strength of Disturbance (kV/m)
f/f – Relative Frequency
0
94 9102
Figure 1. Frequency Dependence of Responsivity
Figure 4. Threshold Irradiance vs.
Field Strength of Disturbance
10
0.30
0.25
f = f
0
1 kHz
0.20
Input burst duration
10 kHz
0.15
1
0.10
l = 950 nm,
optical test signal, fig.7
100 Hz
100
0.05
0.00
0.1
0.01
1000
0.1
1
10
0.1
1.0
10.0 100.0 1000.0 10000.0
2
12751
E – Irradiance ( mW/m )
DV
AC Voltage on DC Supply Voltage (mV)
94 9106
e
sRMS –
Figure 2. Pulse Length and Sensitivity in Dark Ambient
Figure 5. Sensitivity vs. Supply Voltage Disturbances
5.0
1.0
Correlation with ambient light sources
(Disturbanceeffect):10W/m ^1.4klx
4.5
0.9
2
Sensitivity in dark ambient
0.8
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
(Stand.illum.A,T=2855K)^8.2klx
(Daylight,T=5900K)
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
Ambient, l = 950 nm
0.01
0.10
1.00
10.00
100.00
–30 –15
0
15 30 45 60 75 90
2
96 12111
E – DC Irradiance (W/m )
96 12112
T
amb
– Ambient Temperature ( °C )
Figure 3. Sensitivity in Bright Ambient
Figure 6. Sensitivity vs. Ambient Temperature
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4 (10)
Document Number 82162
Rev. 2, 05–Nov–01
TSOP51..
Vishay Semiconductors
Not for new designs
Optical Test Signal
(IR diode TSAL6200, I =0.4 A, N=6 pulses, f=f , T=10 ms)
E
e
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
F
0
T
on
t
t
pi
*)
T
off
T
*) t w 6/fo is recommended for optimal function
pi
l = 950 nm,
Output Signal
14337
optical test signal, fig.8
V
V
O
1 )
2 )
3/f < t < 9/f
0
0
d
OH
OL
t
pi
– 4/f < t < t + 6/f
0
po
pi
0
0.1
1.0
10.0 100.0 1000.0 10000.0
V
2
12753
E – Irradiance (mW/m )
e
1 )
2 )
t
t
d
t
po
Figure 10. Output Pulse Diagram
Figure 7. Output Function
Optical Test Signal
E
e
1.2
1.0
t
0.8
0.6
0.4
600 ms
600 ms
T = 60 ms
94 8134
Output Signal, ( see Fig.10 )
V
V
O
0.2
0
OH
OL
1150
750
850
950
1050
V
t
l – Wavelength ( nm )
94 8408
T
on
T
off
Figure 11. Relative Spectral Sensitivity vs. Wavelength
Figure 8. Output Function
0°
10°
20°
30°
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
f = 38 kHz
40°
1.0
0.9
0.8
50°
60°
70°
80°
0.7
0.6
0.6
0.4
0.2
0
0.2
0.4
0
10 20 30 40 50 60 70 80 90
d
– Relative Transmission Distance
16801
rel
16152
Burstlength [number of cycles/burst]
Figure 9. Max. Envelope Duty Cycle vs. Burstlength
Figure 12. Directivity
Document Number 82162
Rev. 2, 05–Nov–01
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5 (10)
TSOP51..
Vishay Semiconductors
Not for new designs
Operating Instructions
Reflow Soldering
Manual Soldering
D Reflow soldering must be done within 48 hours
stored under max. 30°C, 80% RH after opening
envelop
D Use the 6/4 solder or the solder containing silver.
D Use a soldering iron of 25 W or smaller. Adjust the
D Recommended soldering paste
temperature of the soldering iron below 300_C.
(composition: SN 63%, Pb 37%)
Melting temperature 178 to 192°C
D Finish soldering within three seconds.
D Apply solder paste to the specified soldering
pads, by using a dispenser or by screen printing.
D Recommended thickness of metal mask is 0.2 mm
for screen printing.
D Handle products only after the temperature is
cooled off.
Cleaning
D The recommended reflow furnace is a
combinationtype with upper and lower heaters.
D Set the furnace temperatures for pre-heating and
heating in accordance with the reflow temperature
profile as shown below. Excercise extreme care to
keep the maximum temperature below 230_C. The
following temperature profile means the tempera–
ture at the device surface. Since temperature differ–
ence occurs between the work and the surface of
the circuit board depending on the pes of circuit
board or reflow furnace, the operating conditions
should be verified prior to start of operation.
D Handling after reflow should be done only after the
work surface has been cooled off.
D Perform cleaning after soldering strictly in
conformance to the following conditions:
Cleaning agent:
2-propanol (isopropyl alcohol).
Commercially available grades (industrial
use) should be used.
Demineralized or distilled water having a
resistivity of not less than 500 mW
corresponding to a conductivity of 2 mS/m.
D Temperature and time: 30 seconds under the
temperature below 50_C or 3 minutes below 30_C.
D Ultrasonic cleaning: Below 20 W.
94 8625
300
10 s
max. 240°C
ca. 230°C
250
200
150
100
50
215°C
max. 160°C
max. 40 s
90 s – 120 s
full line
: typical
dotted line: process limits
2 K/s – 4 K/s
Lead Temperature
0
50
100
150
200
250
Time ( s )
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6 (10)
Document Number 82162
Rev. 2, 05–Nov–01
TSOP51..
Vishay Semiconductors
Not for new designs
Dimensions in mm
16776
Document Number 82162
Rev. 2, 05–Nov–01
www.vishay.com
7 (10)
TSOP51..
Vishay Semiconductors
Not for new designs
Taping Version TSOP51..TT
16584
www.vishay.com
8 (10)
Document Number 82162
Rev. 2, 05–Nov–01
TSOP51..
Vishay Semiconductors
Not for new designs
Taping Version TSOP51..TR
16585
Document Number 82162
Rev. 2, 05–Nov–01
www.vishay.com
9 (10)
TSOP51..
Vishay Semiconductors
Not for new designs
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone
depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their
use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs
listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances
and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
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10 (10)
Document Number 82162
Rev. 2, 05–Nov–01
相关型号：
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