TSSF4500_11 [VISHAY]
High Speed Infrared Emitting Diode;
| 型号： | TSSF4500_11 |
| 厂家： | 
VISHAY |
| 描述： | High Speed Infrared Emitting Diode |
| 文件： | 总5页 (文件大小：96K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TSSF4500
Vishay Semiconductors
www.vishay.com
High Speed Infrared Emitting Diode, 890 nm,
GaAlAs Double Hetero
FEATURES
• Package type: leaded
• Package form: side view
• Dimensions (L x W x H in mm): 4.5 x 4 x 4.8
• Peak wavelength: λp = 890 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: ϕ = 22ꢀ
• Low forward voltage
• Suitable for high pulse current operation
94 8688
• High modulation bandwidth: fc = 12 MHz
• Good spectral matching with Si photodetectors
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Note
DESCRIPTION
TSSF4500 is an infrared, 890 nm emitting diode in GaAlAs
double hetero (DH) technology with high radiant power and
high speed, molded in a clear, untinted plastic package.
** Please see document “Vishay Material Category Policy”:
www.vishay.com/doc?99902
APPLICATIONS
• Infrared high speed remote control and free air data
transmission systems with high modulation frequencies or
high data transmission rate requirements
• TSSF4500 is ideal for the design of transmission systems
according to IrDA requirements and for carrier frequency
based systems (e.g. ASK/FSK - coded, 450 kHz or 1.3
MHz)
PRODUCT SUMMARY
COMPONENT
Ie (mW/sr)
ϕ (deg)
λp (nm)
tr (ns)
TSSF4500
20
22
890
30
Note
•
Test conditions see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
PACKAGING
Bulk
REMARKS
MOQ: 4000 pcs, 4000 pcs/bulk
PACKAGE FORM
TSSF4500
Side view
Note
MOQ: minimum order quantity
•
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 ꢀC, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
5
UNIT
V
Reverse voltage
VR
IF
Forward current
100
200
1.5
mA
mA
A
Peak forward current
Surge forward current
Power dissipation
tp/T = 0.5, tp = 100 μs
tp = 100 μs
IFM
IFSM
PV
160
mW
Rev. 1.7, 24-Aug-11
Document Number: 81040
1
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TSSF4500
Vishay Semiconductors
www.vishay.com
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 ꢀC, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
100
UNIT
ꢀC
Junction temperature
Tj
Operating temperature range
Storage temperature range
Soldering temperature
Tamb
Tstg
- 40 to + 100
- 40 to + 100
260
ꢀC
ꢀC
t ≤ 5 s, 2 mm from case
Tsd
ꢀC
Thermal resistance junction/ambient
Leads not soldered
RthJA
450
K/W
250
200
150
125
100
75
RthJA
RthJA
100
50
0
50
25
0
0
0
20
40
60
80
100
20
40
60
80
100
94 8029
94 7916
Tamb - Ambient Temperature (°C)
Tamb - Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS (Tamb = 25 ꢀC, unless otherwise specified)
PARAMETER
TEST CONDITION
IF = 100 mA, tp = 20 ms
IF = 1.5 A, tp = 100 μs
IF = 1 mA
SYMBOL
MIN.
TYP.
1.35
2.4
MAX.
UNIT
V
VF
VF
TKVF
IR
1.6
Forward voltage
V
Temperature coefficient of VF
Reverse current
- 1.8
mV/K
μA
VR = 5 V
10
50
Junction capacitance
V
R = 0 V, f = 1 MHz, E = 0
Cj
160
20
pF
IF = 100 mA, tp = 20 ms
IF = 1 A, tp = 100 μs
IF = 100 mA, tp = 20 ms
IF = 100 mA
Ie
10
mW/sr
mW/sr
mW
%/K
deg
nm
Radiant intensity
Ie
200
35
Radiant power
φe
Temperature coefficient of φe
Angle of half intensity
Peak wavelength
TKφe
ϕ
- 0.7
22
IF = 100 mA
IF = 100 mA
λp
Δλ
TKλp
tr
890
40
Spectral bandwidth
Temperature coefficient of λp
Rise time
nm
IF = 100 mA
0.2
30
nm/K
ns
IF = 100 mA
Fall time
IF = 100 mA
tf
30
ns
Cut-off frequency
Virtual source diameter
IDC = 70 mA, IAC = 30 mA pp
fc
12
MHz
mm
d
2.1
Rev. 1.7, 24-Aug-11
Document Number: 81040
2
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TSSF4500
Vishay Semiconductors
www.vishay.com
BASIC CHARACTERISTICS (Tamb = 25 ꢀC, unless otherwise specified)
0°
10°
20°
104
30°
40°
103
1.0
0.9
102
50°
60°
0.8
101
70°
80°
0.7
100
0.6
0.4
0
0.2
94 8883
0
1
2
3
4
94 8880
VF - Forward Voltage (V)
Fig. 3 - Forward Current vs. Forward Voltage
Fig. 6 - Relative Radiant Intensity vs. Angular Displacement
1000
100
10
tp = 0.1 ms
1
0.1
1
10
100
1000
21440
IF - Forward Current (mA)
Fig. 4 - Radiant Intensity vs. Forward Current
1.25
1.0
0.75
0.5
0.25
0
1000
800
900
20082
λ - Wavelength (nm)
Fig. 5 - Relative Radiant Power vs. Wavelength
Rev. 1.7, 24-Aug-11
Document Number: 81040
3
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TSSF4500
Vishay Semiconductors
www.vishay.com
PACKAGE DIMENSIONS in millimeters
0.15
0.15
4
0.15
4.5
1.7
Area not plane
0.15
0.6
C
A
0.45 + 0.2
0.4 + 0.15
- 0.1
technical drawings
according to DIN
specifications
2.54 nom.
Drawing-No.: 6.544-5253.01-4
Issue:1; 01.07.96
96 12206
Rev. 1.7, 24-Aug-11
Document Number: 81040
4
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
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