TSSS2600_08 [VISHAY]
Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs; 红外发光二极管，符合RoHS ， 950纳米，砷化镓
| 型号： | TSSS2600_08 |
| 厂家： | 
VISHAY |
| 描述： | Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs |
| 文件： | 总5页 (文件大小：104K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TSSS2600
Vishay Semiconductors
Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs
FEATURES
• Package type: leaded
• Package form: side view
• Dimensions (L x W x H in mm): 3.6 x 2.2 x 5
• Peak wavelength: λp = 950 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: ϕ = 25°, horizontal
• Low forward voltage
94 8672
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
• Package matched with detector TEST2600
DESCRIPTION
• Lead (Pb)-free component in accordance with
RoHS 2002/95/EC and WEEE 2002/96/EC
TSSS2600 is an infrared, 950 nm emitting diode in GaAs
technology, molded in a miniature, clear plastic package with
side view lens.
APPLICATIONS
• Infrared source in miniature light barriers or reflective
sensor systems with short transmission distances and low
forward voltage requirements. Matching with silicon PIN
photodiodes or phototransistors (e.g. TEST2600)
PRODUCT SUMMARY
COMPONENT
Ie (mW/sr)
ϕ (deg)
λp (nm)
tr (ns)
TSSS2600
2.6
25
950
800
Note
Test conditions see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
PACKAGING
Bulk
REMARKS
PACKAGE FORM
TSSS2600
MOQ: 5000 pcs, 5000 pcs/bulk
Side view
Note
MOQ: minimum order quantity
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITION
SYMBOL
VALUE
5
UNIT
V
Reverse voltage
VR
IF
Forward current
100
200
2.0
mA
mA
A
Peak forward current
Surge forward current
Power dissipation
tp/T = 0.5, tp = 100 µs
tp = 100 µs
IFM
IFSM
PV
Tj
170
100
mW
°C
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
Tamb
Tstg
- 40 to + 100
- 40 to + 100
260
°C
°C
t ≤ 5 s, 2 mm from case
Tsd
°C
Leads not soldered
RthJA
450
K/W
Note
amb = 25 °C, unless otherwise specified
T
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244
For technical questions, contact: emittertechsupport@vishay.com
Document Number: 81042
Rev. 1.6, 05-Sep-08
TSSS2600
Infrared Emitting Diode, RoHS Compliant,
950 nm, GaAs
Vishay Semiconductors
250
200
125
100
75
150
100
50
RthJA
RthJA
50
25
0
0
0
20
40
60
80
100
0
20
40
60
80
100
94 8029
94 7916
Tamb - Ambient Temperature (°C)
Tamb - Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
1.25
2.2
MAX.
UNIT
V
IF = 100 mA, tp = 20 ms
IF = 1.5 A, tp = 100 µs
IF = 100 mA
VF
VF
TKVF
IR
1.6
Forward voltage
V
Temperature coefficient of VF
Reverse current
- 1.3
mV/K
µA
V
R = 5 V
100
3
Junction capacitance
V
R = 0 V, f = 1 MHz, E = 0
Cj
30
2.6
25
pF
IF = 100 mA, tp = 20 ms
IF = 1.5 A, tp = 100 µs
IF = 100 mA, tp = 20 ms
IF = 100 mA
Ie
1
mW/sr
mW/sr
mW
%/K
deg
deg
nm
Radiant intensity
Ie
Radiant power
φe
20
Temperature coefficient of φe
TKφe
ϕ1
ϕ2
λp
- 0.8
25
horizontal
Angle of half intensity
vertical
60
Peak wavelength
IF = 100 mA
950
50
Spectral bandwidth
IF = 100 mA
Δλ
TKλp
tr
nm
Temperature coefficient of λp
IF = 100 mA
0.2
800
400
800
400
2
nm/K
ns
IF = 100 mA
Rise time
IF = 1.5 A
tr
ns
IF = 100 mA
tf
ns
Fall time
IF = 1.5 A
tf
ns
Virtual source diameter
d
mm
Note
amb = 25 °C, unless otherwise specified
T
Document Number: 81042
Rev. 1.6, 05-Sep-08
For technical questions, contact: emittertechsupport@vishay.com
www.vishay.com
245
TSSS2600
Infrared Emitting Diode, RoHS Compliant,
950 nm, GaAs
Vishay Semiconductors
BASIC CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified
104
103
102
101
100
10-1
1.6
1.2
IF = 20 mA
0.8
0.4
0
0
1
2
3
4
140
- 10 0 10
50
100
Tamb - Ambient Temperature (°C)
V
F - Forward Voltage (V)
94 7996
94 7993
Fig. 3 - Pulse Forward Current vs. Forward Voltage
Fig. 6 - Relative Radiant Intensity/Power vs. Ambient Temperature
100
10
1.25
1.0
0.75
0.5
1
0.25
IF = 100 mA
0.1
0
900
1000
0
1
2
3
4
950
10
10
10
10
10
94 7967
I
- Forward Current (mA)
λ
- Wavelength (nm)
F
94 7994
Fig. 4 - Radiant Intensity vs. Forward Current
Fig. 7 - Relative Radiant Power vs. Wavelength
°
10
°
20
0°
30°
40°
100
10
1
1.0
0.9
50°
60°
0.8
70°
0.7
80°
0.1
1
10
100
1000
0.6 0.4 0.2
0
13718
IF - Forward Current (mA)
horizontal
94 7969
Fig. 5 - Radiant Power vs. Forward Current
Fig. 8 - Relative Radiant Intensity vs. Angular Displacement
www.vishay.com
246
For technical questions, contact: emittertechsupport@vishay.com
Document Number: 81042
Rev. 1.6, 05-Sep-08
TSSS2600
Infrared Emitting Diode, RoHS Compliant,
950 nm, GaAs
Vishay Semiconductors
°
10
°
20
0°
30°
40°
1.0
0.9
50°
60°
0.8
70°
0.7
80°
0.6 0.4 0.2
0
vertical
94 7970
Fig. 9 - Relative Radiant Intensity vs. Angular Displacement
PACKAGE DIMENSIONS in millimeters
0.3 + 0.1
Area not plane
Emitter center
0.15
3.6
0.15
1.8
+ 0.1
- 0.15
0.15
0.65
2.2
C
A
0.5 + 0.2
0.15
0.4
- 0.1
0.4 + 0.15
2.54 nom.
technical drawings
according to DIN
specifications
60°
Drawing-No.: 6.544-5241.01-4
Issue: 3; 18.04.96
95 11488
Document Number: 81042
Rev. 1.6, 05-Sep-08
For technical questions, contact: emittertechsupport@vishay.com
www.vishay.com
247
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Vishay
Disclaimer
All product specifications and data are subject to change without notice.
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(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
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information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
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document or by any conduct of Vishay.
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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