TSUS5200-FSZ [VISHAY]
Infrared LED, LAMP,IRED,950NM PEAK WAVELENGTH,LED-2B;
| 型号： | TSUS5200-FSZ |
| 厂家： | 
VISHAY |
| 描述： | Infrared LED, LAMP,IRED,950NM PEAK WAVELENGTH,LED-2B 光电 半导体 |
| 文件： | 总5页 (文件大小：99K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TSUS5200, TSUS5201, TSUS5202
Vishay Semiconductors
Infrared Emitting Diode, 950 nm, GaAs
FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): Ø 5
• Leads with stand-off
• Peak wavelength: λp = 950 nm
• High reliability
• Angle of half intensity: ϕ = 15ꢀ
• Low forward voltage
94 8390
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
DESCRIPTION
TSUS5200 is an infrared, 950 nm emitting diode in GaAs
technology molded in a blue-gray tinted plastic package.
• Halogen-free according to IEC 61249-2-21 definition
APPLICATIONS
• Infrared remote control and free air transmission systems
with low forward voltage and small package requirements
• Emitter in transmissive sensors
• Emitter in reflective sensors
PRODUCT SUMMARY
COMPONENT
TSUS5200
TSUS5201
TSUS5202
Ie (mW/sr)
ϕ (deg)
15
λ
P (nm)
950
tr (ns)
800
20
25
30
15
950
800
15
950
800
Note
Test conditions see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
PACKAGING
REMARKS
PACKAGE FORM
TSUS5200
Bulk
Bulk
Bulk
MOQ: 4000 pcs, 4000 pcs/bulk
MOQ: 4000 pcs, 4000 pcs/bulk
MOQ: 4000 pcs, 4000 pcs/bulk
T-1¾
T-1¾
T-1¾
TSUS5201
TSUS5202
Note
MOQ: minimum order quantity
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
Reverse voltage
VR
IF
5
150
V
mA
mA
A
Forward current
Peak forward current
tp/T = 0.5, tp = 100 µs
tp = 100 µs
IFM
IFSM
PV
300
Surge forward current
Power dissipation
2.5
170
mW
ꢀC
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Tj
100
Tamb
Tstg
Tsd
- 40 to + 85
- 40 to + 100
260
ꢀC
ꢀC
t ≤ 5 s, 2 mm from case
ꢀC
Thermal resistance junction/ambient
Note
amb = 25 ꢀC, unless otherwise specified
J-STD-051, leads 7 mm, soldered on PCB
RthJA
230
K/W
T
Document Number: 81055
Rev. 2.2, 29-Jun-09
For technical questions, contact: emittertechsupport@vishay.com
www.vishay.com
1
TSUS5200, TSUS5201, TSUS5202
Infrared Emitting Diode, 950 nm,
Vishay Semiconductors
GaAs
120
100
80
60
40
20
0
180
160
140
120
100
80
60
40
20
0
RthJA = 230 K/W
RthJA = 230 K/W
0
10 20 30 40 50 60 70 80 90 100
Tamb - Ambient Temperature (ꢀC)
0
10 20 30 40 50 60 70 80 90 100
Tamb - Ambient Temperature (ꢀC)
21314
21313
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS
PARAMETER
TEST CONDITION
IF = 100 mA, tp = 20 ms
IF = 100 mA
R = 5 V
SYMBOL
MIN.
TYP.
1.3
MAX.
UNIT
V
Forward voltage
VF
TKVF
IR
1.7
Temperature coefficient of VF
Reverse current
- 1.3
mV/K
µA
V
100
Junction capacitance
Temperature coefficient of φe
Angle of half intensity
Peak wavelength
V
R = 0 V, f = 1 MHz, E = 0
IF = 20 mA
Cj
30
- 0.8
15
pF
TKφe
ϕ
%/K
deg
nm
nm
nm/K
ns
IF = 100 mA
IF = 100 mA
IF = 100 mA
IF = 100 mA
IF = 1.5 A
λp
950
50
Spectral bandwidth
Δλ
TKλp
tr
Temperature coefficient of λp
0.2
800
400
800
400
3.8
Rise time
tr
ns
IF = 100 mA
IF = 1.5 A
tf
ns
Fall time
tf
ns
Virtual source diameter
d
mm
Note
Tamb = 25 ꢀC, unless otherwise specified
www.vishay.com
2
For technical questions, contact: emittertechsupport@vishay.com
Document Number: 81055
Rev. 2.2, 29-Jun-09
TSUS5200, TSUS5201, TSUS5202
Infrared Emitting Diode, 950 nm,
Vishay Semiconductors
GaAs
TYPE DEDICATED CHARACTERISTICS
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
2.2
2.2
2.2
20
MAX.
3.4
3.4
2.7
50
UNIT
V
TSUS5200
TSUS5201
TSUS5202
TSUS5200
TSUS5201
TSUS5202
TSUS5200
TSUS5201
TSUS5202
TSUS5200
TSUS5201
TSUS5202
VF
VF
VF
Ie
Forward voltage
IF = 1.5 A, tp = 100 µs
V
V
10
15
mW/sr
mW/sr
mW/sr
mW/sr
mW/sr
mW/sr
mW
IF = 100 mA, tp = 20 ms
IF = 1.5 A, tp = 100 µs
IF = 100 mA, tp = 20 ms
Ie
25
50
Ie
20
30
50
Radiant intensity
Radiant power
Ie
95
180
230
280
13
Ie
120
170
Ie
φe
φe
φe
14
mW
15
mW
Note
Tamb = 25 ꢀC, unless otherwise specified
BASIC CHARACTERISTICS
Tamb = 25 ꢀC, unless otherwise specified
1
1.2
1.1
10
I
= 2.5 A ( Single Pulse )
FSM
IF = 10 mA
t /T = 0.01
p
1.0
0.9
0.8
0.7
0
10
0.05
0.1
0.5
1.0
-1
10
0
20
40
60
80
100
-2
-1
0
1
2
10
10
10
10
10
Tamb - Ambient Temperature (ꢀC)
94 7990
tp - Pulse Duration (ms)
94 7989
Fig. 3 - Pulse Forward Current vs. Pulse Duration
Fig. 5 - Relative Forward Voltage vs. Ambient Temperature
1000
104
103
102
101
100
10-1
TSUS 5202
100
TSUS5200
10
TSUS 5201
1
0
1
2
3
4
0
1
2
3
4
10
10
10
10
10
VF - Forward Voltage (V)
I
- Forward Current (mA)
94 7996
94 7991
F
Fig. 4 - Forward Current vs. Forward Voltage
Fig. 6 - Radiant Intensity vs. Forward Current
Document Number: 81055
Rev. 2.2, 29-Jun-09
For technical questions, contact: emittertechsupport@vishay.com
www.vishay.com
3
TSUS5200, TSUS5201, TSUS5202
Infrared Emitting Diode, 950 nm,
Vishay Semiconductors
GaAs
1000
1.25
1.0
TSUS 5202
100
10
1
0.75
0.5
0.25
0
TSUS5200
IF = 100 mA
0.1
1000
0
1
2
3
4
900
950
10
10
10
10
10
I
- Forward Current (mA)
94 7992
λ - Wavelength (nm)
F
94 7994
Fig. 7 - Radiant Power vs. Forward Current
1.6
Fig. 9 - Relative Radiant Power vs. Wavelength
ꢀ
10
ꢀ
20
0ꢀ
30ꢀ
1.2
IF = 20 mA
40ꢀ
1.0
0.9
0.8
0.4
0
50ꢀ
60ꢀ
0.8
70ꢀ
0.7
80ꢀ
140
- 10 0 10
50
100
0.6
0.6 0.4 0.2
0
0.2
0.4
Tamb - Ambient Temperature (ꢀC)
94 7995
94 7993
Fig. 8 - Relative Radiant Intensity/Power vs. Ambient Temperature
Fig. 10 - Relative Radiant Intensity vs. Angular Displacement
PACKAGE DIMENSIONS in millimeters
C
A
R 2.49 (sphere)
Area not plane
Ø 5 0.15
1.1 0.25
technical drawings
according to DIN
specifications
+ 0.15
- 0.05
0.5
+ 0.15
0.5
- 0.05
2.54 nom.
6.544-5258.02-4
Issue: 6; 19.05.09
95 10916
www.vishay.com
4
For technical questions, contact: emittertechsupport@vishay.com
Document Number: 81055
Rev. 2.2, 29-Jun-09
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
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