TZQ5239B [VISHAY]
Silicon Epitaxial Planar Z-Diodes; 硅外延平面的Z-二极管
| 型号： | TZQ5239B |
| 厂家： | 
VISHAY |
| 描述： | Silicon Epitaxial Planar Z-Diodes |
| 文件： | 总6页 (文件大小：86K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TZQ5221B...TZQ5267B
Vishay Telefunken
Silicon Epitaxial Planar Z–Diodes
Features
Very sharp reverse characteristic
Low reverse current level
Available with tighter tolerances
Very high stability
Low noise
96 12009
Applications
Voltage stabilization
Absolute Maximum Ratings
T = 25 C
j
Parameter
Power dissipation
Z–current
Junction temperature
Storage temperature range
Test Conditions
Type
Symbol
Value
500
Unit
mW
mA
C
R
300K/W
P
V
thJA
I
Z
P /V
V
Z
T
175
–65...+175
j
T
stg
C
Maximum Thermal Resistance
T = 25 C
j
Parameter
Junction ambient
Test Conditions
on PC board 50mmx50mmx1.6mm
Symbol
R
thJA
Value
500
Unit
K/W
Electrical Characteristics
T = 25 C
j
Parameter
Forward voltage
Test Conditions
I =200mA
Type
Symbol Min
Typ Max Unit
1.5
V
F
V
F
Document Number 85612
Rev. 3, 01-Apr-99
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1 (6)
TZQ5221B...TZQ5267B
Vishay Telefunken
1)
Type
V
I
for r
r
at I
I
at V
TK
VZ
%/K
Znom
V
ZT
zjT
zjk
ZK
mA
R
R
mA
20
A
V
TZQ5221B
TZQ5222B
TZQ5223B
TZQ5224B
TZQ5225B
TZQ5226B
TZQ5227B
TZQ5228B
TZQ5229B
TZQ5230B
TZQ5231B
TZQ5232B
TZQ5233B
TZQ5234B
TZQ5235B
TZQ5236B
TZQ5237B
TZQ5238B
TZQ5239B
TZQ5240B
TZQ5241B
TZQ5242B
TZQ5243B
TZQ5244B
TZQ5245B
TZQ5246B
TZQ5247B
TZQ5248B
TZQ5249B
TZQ5250B
TZQ5251B
TZQ5252B
TZQ5253B
TZQ5254B
TZQ5255B
TZQ5256B
TZQ5257B
TZQ5258B
TZQ5259B
TZQ5260B
TZQ5261B
TZQ5262B
TZQ5263B
TZQ5264B
TZQ5265B
TZQ5266B
TZQ5267B
2.4
2.5
2.7
2.8
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.0
6.2
6.8
7.5
8.2
8.7
9.1
10
11
< 30
< 30
< 30
< 30
< 29
< 28
< 24
< 23
< 22
< 19
< 17
< 11
< 7
< 1200
< 1250
< 1300
< 1400
< 1600
< 1600
< 1700
< 1900
< 2000
< 1900
< 1600
< 1600
< 1600
< 1000
< 750
< 500
< 500
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 700
< 700
< 800
< 900
< 1000
< 1100
< 1300
< 1400
< 1400
< 1600
< 1700
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
< 100
< 100
< 75
< 75
< 50
< 25
< 15
< 10
< 5
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
2.0
2.0
3.0
3.5
4.0
5.0
6.0
6.5
6.5
7.0
8.0
8.4
9.1
9.9
10
< –0.085
< –0.085
< –0.080
< –0.080
< –0.075
< –0.070
< –0.065
< –0.060
< ±0.055
< ±0.030
< ±0.030
< +0.038
< +0.038
< +0.045
< +0.050
< +0.058
< +0.062
< +0.065
< +0.068
< +0.075
< +0.076
< +0.077
< +0.079
< +0.082
< +0.082
< +0.083
< +0.084
< +0.085
< +0.086
< +0.086
< +0.087
< +0.088
< +0.089
< +0.090
< +0.091
< +0.091
< +0.092
< +0.093
< +0.094
< +0.095
< +0.095
< +0.096
< +0.096
< +0.097
< +0.097
< +0.097
< +0.098
20
20
20
20
20
20
20
20
20
< 5
20
< 5
20
< 5
20
< 5
20
< 7
< 5
20
< 5
< 3
20
< 6
< 3
20
< 8
< 3
20
< 8
< 3
20
< 10
< 17
< 22
< 30
< 13
< 15
< 16
< 17
< 19
< 21
< 23
< 25
< 29
< 33
< 35
< 41
< 44
< 49
< 58
< 70
< 80
< 93
< 3
20
< 3
20
< 2
12
13
14
15
16
17
18
19
20
22
24
25
27
28
30
33
36
39
43
47
51
56
60
62
68
75
20
< 1
9.5
9.0
8.5
7.8
7.4
7.0
6.6
6.2
5.6
5.2
5.0
4.6
4.5
4.2
3.8
3.4
3.2
3.0
2.7
2.5
2.2
2.1
2.0
1.8
1.7
< 0.5
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
11
12
13
14
14
15
17
18
19
21
21
23
25
27
30
33
< 105
< 125
< 150
< 170
< 185
< 230
< 270
36
39
43
46
47
52
56
1.)Based on dc measurement at thermal equilibrium; case temperature maintained at 30 C ± 2 C.
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2 (6)
Document Number 85612
Rev. 3, 01-Apr-99
TZQ5221B...TZQ5267B
Vishay Telefunken
Characteristics (Tj = 25 C unless otherwise specified)
600
500
400
300
200
100
0
15
10
5
I =5mA
Z
0
–5
200
50
0
40
80
120
160
0
10
20
30
40
95 9602
T
amb
– Ambient Temperature ( °C )
95 9600
V – Z-Voltage ( V )
Z
Figure 1. Total Power Dissipation vs.
Ambient Temperature
Figure 4. Temperature Coefficient of Vz vs.
Z–Voltage
1000
100
10
200
T =25°C
j
150
V =2V
R
T =25°C
j
100
50
0
I =5mA
Z
1
25
25
0
5
10
15
20
0
5
10
V – Z-Voltage ( V )
Z
15
20
95 9598
V – Z-Voltage ( V )
Z
95 9601
Figure 2. Typical Change of Working Voltage under
Figure 5. Diode Capacitance vs.
Z–Voltage
Operating Conditions at T
=25 C
amb
100
10
1
1.3
1.2
1.1
V
=V /V (25°C)
Zt Z
Ztn
–4
TK =10 10 /K
VZ
–4
8
6
10 /K
T =25°C
j
–4
10 /K
–4
4
2
10 /K
–4
10 /K
0
0.1
1.0
0.9
0.8
–4
–2 10 /K
–4
–4 10 /K
0.01
0.001
1.0
240
0
0.2
0.4
0.6
0.8
–60
0
60
120
180
95 9605
V – Forward Voltage ( V )
F
95 9599
T – Junction Temperature ( °C )
j
Figure 3. Typical Change of Working Voltage vs.
Junction Temperature
Figure 6. Forward Current vs.
Forward Voltage
Document Number 85612
Rev. 3, 01-Apr-99
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3 (6)
TZQ5221B...TZQ5267B
Vishay Telefunken
100
80
1000
100
10
I =1mA
Z
P
T
=500mW
tot
=25°C
amb
60
5mA
40
20
0
10mA
T =25°C
j
1
20
25
0
4
8
12
16
0
5
10
15
20
95 9604
V
– Z-Voltage ( V )
95 9606
V – Z-Voltage ( V )
Z
Z
Figure 7. Z–Current vs. Z–Voltage
Figure 9. Differential Z–Resistance vs. Z–Voltage
50
40
30
P
T
=500mW
tot
=25°C
amb
20
10
0
35
15
20
25
V – Z-Voltage ( V )
Z
30
95 9607
Figure 8. Z–Current vs. Z–Voltage
1000
100
10
t /T=0.5
p
t /T=0.2
p
Single Pulse
R
T=T
=300K/W
–T
jmax amb
thJA
t /T=0.01
p
t /T=0.1
p
t /T=0.02
p
2
1/2
t /T=0.05
p
i
=(–V +(V +4r
T/Z
)
)/(2r )
ZM
Z
Z
zj
thp
zj
1
10
–1
0
1
2
10
10
t – Pulse Length ( ms )
10
95 9603
p
Figure 10. Thermal Response
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4 (6)
Document Number 85612
Rev. 3, 01-Apr-99
TZQ5221B...TZQ5267B
Vishay Telefunken
Dimensions in mm
96 12071
Document Number 85612
Rev. 3, 01-Apr-99
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5 (6)
TZQ5221B...TZQ5267B
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
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6 (6)
Document Number 85612
Rev. 3, 01-Apr-99
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