TZQ5260B-GS18 [VISHAY]
DIODE ZENER 43V 500MW SOD80;型号: | TZQ5260B-GS18 |
厂家: | VISHAY |
描述: | DIODE ZENER 43V 500MW SOD80 二极管 |
文件: | 总6页 (文件大小:123K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
TZQ5221B to TZQ5267B
www.vishay.com
Vishay Semiconductors
Small Signal Zener Diodes
FEATURES
• Very sharp reverse characteristic
• Low reverse current level
• Available with tighter tolerances
• Very high stability
• Low noise
• VZ - tolerance 5 %
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
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DESIGN SUPPORT TOOLS
Models
APPLICATIONS
Available
• Voltage stabilization
PRIMARY CHARACTERISTICS
PARAMETER
VALUE
UNIT
V
VZ range nom.
2.4 to 75
Test current IZT
VZ specification
Circuit configuration
1.7 to 20
mA
Thermal equilibrium
Single
ORDERING INFORMATION
DEVICE NAME
ORDERING CODE
TAPED UNITS PER REEL MINIMUM ORDER QUANTITY
TZQ5221B to TZQ5267B
TZQ5221B to TZQ5267-series-GS18
10 000 (per 13" reel)
2500 (per 7" reel)
10 000/box
12 500/box
TZQ5221B to TZQ5267B
TZQ5221B to TZQ5267B-series-GS08
PACKAGE
MOLDING COMPOUND
WEIGHT
MOISTURE SENSITIVITY
LEVEL
PACKAGE NAME
SOLDERING CONDITIONS
FLAMMABILITY RATING
MSL level 1
(according J-STD-020)
QuadroMELF (SOD-80)
34 mg
UL 94 V-0
260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
mW
mA
K/W
°C
Power dissipation
RthJA 300 K/W
Ptot
IZ
500
Ptot/VZ
500
Zener current
Junction to ambient air
Junction temperature, maximum
Storage temperature range
Forward voltage (max.)
On PC board 50 mm x 50 mm x 1.6 mm
RthJA
Tj
175
Tstg
VF
-65 to +175
1.5
°C
IF = 200 mA
V
Rev. 1.9, 22-Feb-18
Document Number: 85612
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TZQ5221B to TZQ5267B
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
ZENER VOLTAGE
RANGE
REVERSELAEKAGE
CURRENT
TEMPERATURE
COEFFICIENT
TEST CURRENT
DYNAMIC RESISTANCE
VZ at IZT1
V
IZT1
IZT2
IR at VR
ZZ at IZT1
ZZK at IZT2
TKVZ
%/K
PART NUMBER
mA
μA
V
NOM.
2.4
2.5
2.7
2.8
3
TZQ5221B
TZQ5222B
TZQ5223B
TZQ5224B
TZQ5225B
TZQ5226B
TZQ5227B
TZQ5228B
TZQ5229B
TZQ5230B
TZQ5231B
TZQ5232B
TZQ5233B
TZQ5234B
TZQ5235B
TZQ5236B
TZQ5237B
TZQ5238B
TZQ5239B
TZQ5240B
TZQ5241B
TZQ5242B
TZQ5243B
TZQ5244B
TZQ5245B
TZQ5246B
TZQ5247B
TZQ5248B
TZQ5249B
TZQ5250B
TZQ5251B
TZQ5252B
TZQ5253B
TZQ5254B
TZQ5255B
TZQ5256B
TZQ5257B
TZQ5258B
TZQ5259B
TZQ5260B
TZQ5261B
TZQ5262B
TZQ5263B
TZQ5264B
TZQ5265B
TZQ5266B
TZQ5267B
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
9.5
9
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
< 100
< 100
< 75
< 75
< 50
< 25
< 15
< 10
< 5
1
1
< 30
< 30
< 30
< 30
< 29
< 28
< 24
< 23
< 22
< 19
< 17
< 11
< 7
< 1200
< 1250
< 1300
< 1400
< 1600
< 1600
< 1700
< 1900
< 2000
< 1900
< 1600
< 1600
< 1600
< 1000
< 750
< 500
< 500
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 700
< 700
< 800
< 900
< 1000
< 1100
< 1300
< 1400
< 1400
< 1600
< 1700
< -0.085
< -0.085
< -0.080
< -0.080
< -0.075
< -0.070
< -0.065
< -0.060
1
1
1
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6
1
1
1
1
<
<
<
0.055
0.030
0.030
< 5
2
< 5
2
< 5
3
< +0.038
< +0.038
< +0.045
< +0.050
< +0.058
< +0.062
< +0.065
< +0.068
< +0.075
< +0.076
< +0.077
< +0.079
< +0.082
< +0.082
< +0.083
< +0.084
< +0.085
< +0.086
< +0.086
< +0.087
< +0.088
< +0.089
< +0.090
< +0.091
< +0.091
< +0.092
< +0.093
< +0.094
< +0.095
< +0.095
< +0.096
< +0.096
< +0.097
< +0.097
< +0.097
< +0.098
< 5
3.5
4
6.2
6.8
7.5
8.2
8.7
9.1
10
< 5
< 7
< 3
5
< 5
< 3
6
< 6
< 3
6.5
6.5
7
< 8
< 3
< 8
< 3
< 10
< 17
< 22
< 30
< 13
< 15
< 16
< 17
< 19
< 21
< 23
< 25
< 29
< 33
< 35
< 41
< 44
< 49
< 58
< 70
< 80
< 93
< 105
< 125
< 150
< 170
< 185
< 230
< 270
< 3
8
11
< 2
8.4
9.1
9.9
10
11
12
13
14
14
15
17
18
19
21
21
23
25
27
30
33
36
39
43
46
47
52
56
12
< 1
13
< 0.5
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
14
15
8.5
7.8
7.4
7
16
17
18
19
6.6
6.2
5.6
5.2
5
20
22
24
25
27
4.6
4.5
4.2
3.8
3.4
3.2
3
28
30
33
36
39
43
47
2.7
2.5
2.2
2.1
2
51
56
60
62
68
1.8
1.7
75
Note
Based on DC measurement at thermal equilibrium; case temperature maintained at 30 °C 2 °C
•
Rev. 1.9, 22-Feb-18
Document Number: 85612
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TZQ5221B to TZQ5267B
www.vishay.com
Vishay Semiconductors
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
15
10
600
500
400
300
200
5
IZ = 5 mA
0
100
0
- 5
200
Tamb - Ambient Temperature (°C)
0
80
120
160
0
10
20
30
40
50
40
95 9602
95 9600
VZ - Z-Voltage (V)
Fig. 1 - Total Power Dissipation vs. Ambient Temperature
Fig. 4 - Temperature Coefficient of VZ vs. Z-Voltage
1000
200
150
100
VR = 2 V
Tj = 25 °C
100
IZ = 5 mA
10
50
0
1
25
25
0
10
15
20
5
0
10
15
20
5
95 9598
95 9601
VZ - Z-Voltage (V)
VZ - Z-Voltage (V)
Fig. 2 - Typical Change of Working Voltage under Operating
Fig. 5 - Diode Capacitance vs. Z-Voltage
Conditions at Tamb = 25 °C
1.3
100
10
VZtn = VZt/VZ (25 °C)
1.2
TKVZ = 10 x 10-4/K
8 x 10-4/K
Tj = 25 °C
6 x 10-4/K
1
1.1
4 x 10-4/K
2 x 10-4/K
0.1
0.01
0
1.0
0.9
- 2 x 10-4/K
- 4 x 10-4/K
0.001
0.8
1.0
240
0
0.2
0.4
0.6
0.8
0
- 60
60
120
180
95 9599
VF - Forward Voltage (V)
Tj - Junction Temperature (°C)
959605
Fig. 3 - Typical Change of Working Voltage vs.
Fig. 6 - Forward Current vs. Forward Voltage
Junction Temperature
Rev. 1.9, 22-Feb-18
Document Number: 85612
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TZQ5221B to TZQ5267B
www.vishay.com
Vishay Semiconductors
1000
100
80
IZ = 1 mA
Ptot = 500 mW
100
10
Tamb = 25 °C
60
40
20
5 mA
10 mA
Tj = 25 °C
15 20
1
0
25
12
20
0
5
10
0
4
6
8
VZ - Z-Voltage (V)
95 9606
VZ - Z-Voltage (V)
95 9604
Fig. 7 - Z-Current vs. Z-Voltage
Fig. 9 - Differential Z-Resistance vs. Z-Voltage
50
Ptot = 500 mW
amb = 25 °C
40
30
20
10
T
0
35
15
20
25
30
95 9607
VZ - Z-Voltage (V)
Fig. 8 - Z-Current vs. Z-Voltage
1000
tp/T = 0.5
100
tp/T = 0.2
Single Pulse
RthJA = 300 K/W
T = Tj max. - Tamb
10
tp/T = 0.01
tp/T = 0.1
tp/T = 0.02
tp/T = 0.05
iZM = (- VZ + (VZ2 + 4rzj x T/Zthp 1/2)/(2rzj)
)
1
10-1
100
101
102
Fig. 10 - Thermal Response
Rev. 1.9, 22-Feb-18
Document Number: 85612
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TZQ5221B to TZQ5267B
www.vishay.com
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters (inches): QuadroMELF SOD-80
Cathode identification
> R3 (R0.118)
glass
0.47 (0.019) max.
3.7 (0.146)
3.3 (0.130)
The gap between plug and glass can
be either on cathode or anode side
Foot print recommendation:
1.25 (0.049) min.
2.5 (0.098) max.
5 (0.197) ref.
96 12071
Rev. 1.9, 22-Feb-18
Document Number: 85612
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 09-Jul-2021
Document Number: 91000
1
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