TZS4690 [VISHAY]
Silicon Epitaxial Planar Z-Diodes; 硅外延平面的Z-二极管
| 型号： | TZS4690 |
| 厂家： | 
VISHAY |
| 描述： | Silicon Epitaxial Planar Z-Diodes |
| 文件： | 总6页 (文件大小：80K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TZS4678...TZS4717
Vishay Telefunken
Silicon Epitaxial Planar Z–Diodes
Features
Zener voltage specified at 50 A
Maximum delta V given from 10 A to 100 A
Z
Very high stability
Low noise
96 12009
Applications
Voltage stabilization
Absolute Maximum Ratings
T = 25 C
j
Parameter
Power dissipation
Z–current
Junction temperature
Storage temperature range
Test Conditions
Type
Symbol
Value
500
Unit
mW
mA
C
R
300K/W
P
V
thJA
I
Z
P /V
V
Z
T
175
–65...+175
j
T
stg
C
Maximum Thermal Resistance
T = 25 C
j
Parameter
Junction ambient
Test Conditions
on PC board 50mmx50mmx1.6mm
Symbol
R
thJA
Value
500
Unit
K/W
Electrical Characteristics
T = 25 C
j
Parameter
Forward voltage
Test Conditions
I =100mA
Type
Symbol Min
Typ Max Unit
1.5
V
F
V
F
Document Number 85613
Rev. 2, 01-Apr-99
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1 (6)
TZS4678...TZS4717
Vishay Telefunken
1)
Type
Zener Voltage V @ I = 50 A
Max.
Reverse
Current
3)
Test
Voltage
Max.
Zener
Current
2)
Max.
Voltage
Change
4)
Z
Z
1)
3)
Typ.
V
Min.
Max.
V
I
R
V
R
I
V
Z
ZM
V
A
V
mA
V
TZS4678
TZS4679
TZS4680
TZS4681
TZS4682
TZS4683
TZS4684
TZS4685
TZS4686
TZS4687
TZS4688
TZS4689
TZS4690
TZS4691
TZS4692
TZS4693
TZS4694
TZS4695
TZS4696
TZS4697
TZS4698
TZS4699
TZS4700
TZS4701
TZS4702
TZS4703
TZS4704
TZS4705
TZS4706
TZS4707
TZS4708
TZS4709
TZS4710
TZS4711
TZS4712
TZS4713
TZS4714
TZS4715
TZS4716
TZS4717
1.8
1.710
1.900
2.090
2.280
2.565
2.850
3.135
3.420
3.705
4.085
4.465
4.845
5.320
5.890
6.460
7.125
7.790
8.265
8.645
9.500
10.45
11.40
12.35
13.30
14.25
15.20
16.15
17.10
18.05
19.00
20.90
22.80
23.75
25.65
26.60
28.50
31.35
34.20
37.05
40.85
1.890
2.100
2.310
2.520
2.835
3.150
3.465
3.780
4.095
4.515
4.935
5.355
5.880
6.510
7.140
7.875
8.610
9.135
9.555
10.50
11.55
12.60
13.65
14.70
15.75
16.80
17.85
18.90
19.95
21.00
23.10
25.20
26.25
28.35
29.40
31.50
34.65
37.80
40.95
45.15
7.5
5.0
4.0
2.0
1.0
0.8
7.5
7.5
5.0
4.0
10
10
10
10
10
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.5
2.0
2.0
2.0
3.0
3.0
4.0
5.0
5.1
5.7
6.2
120
110
100
95
90
85
80
75
70
65
60
55
50
45
35
31.8
29.0
27.4
26.2
24.8
21.6
20.4
19.0
17.5
16.3
15.4
14.5
13.2
12.5
11.9
10.8
9.9
0.70
0.70
0.75
0.80
0.85
0.90
0.95
0.95
0.97
0.99
0.99
0.97
0.96
0.95
0.90
0.75
0.50
0.10
0.08
0.10
0.11
0.12
0.13
0.14
0.15
0.16
0.17
0.18
0.19
0.20
0.22
0.24
0.25
0.27
0.28
0.30
0.33
0.36
0.39
0.43
2.0
2.2
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
8.7
9.1
10
11
12
13
14
15
16
17
18
19
20
22
24
25
27
28
30
33
36
39
43
1.0
1.0
1.0
6.6
6.9
7.6
8.4
9.1
9.8
0,05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
10.6
11.4
12.1
12.9
13.6
14.4
15.2
16.7
18.2
19.0
20.4
21.2
22.8
25.0
27.3
29.6
32.6
9.5
8.8
8.5
7.9
7.2
6.6
6.1
5.5
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Document Number85613
Rev. 2, 01-Apr-99
TZS4678...TZS4717
Vishay Telefunken
1.) Toleranzing and voltage designation (V ).
Z
The type numbers shown have a standard tolerance of ± 5% on the nominal zener voltage.
2.) Maximum zener current ratings (I ).
ZM
Maximum zener current ratings are based on maximum zener voltage of the individual units.
3.) Reverse leakage current (I ).
R
Reverse leakage currents are guaranteed and measured at V as shown on the table.
R
4.) Maximum voltage change ( V ).
Z
Voltage change is equal to the difference between V at 100 A and V at 10 A.
Z
Z
Characteristics (Tj = 25 C unless otherwise specified)
600
500
400
300
200
100
0
1.3
1.2
1.1
V
=V /V (25°C)
Zt Z
Ztn
–4
TK =10 10 /K
VZ
–4
8
6
10 /K
–4
10 /K
–4
4
2
10 /K
–4
10 /K
0
1.0
0.9
0.8
–4
–2 10 /K
–4
–4 10 /K
200
240
0
40
80
120
160
–60
0
60
120
180
95 9602
T
amb
– Ambient Temperature ( °C )
95 9599
T – Junction Temperature ( °C )
j
Figure 1. Total Power Dissipation vs.
Ambient Temperature
Figure 3. Typical Change of Working Voltage vs.
Junction Temperature
1000
100
10
15
10
5
T =25°C
j
I =5mA
Z
I =5mA
Z
0
1
–5
25
50
0
5
10
15
20
0
10
20
30
40
95 9598
V – Z-Voltage ( V )
Z
95 9600
V – Z-Voltage ( V )
Z
Figure 2. Typical Change of Working Voltage under
Operating Conditions at T =25 C
Figure 4. Temperature Coefficient of Vz vs.
Z–Voltage
amb
Document Number 85613
Rev. 2, 01-Apr-99
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3 (6)
TZS4678...TZS4717
Vishay Telefunken
200
150
50
40
30
P
T
=500mW
tot
=25°C
amb
V =2V
R
T =25°C
j
100
50
0
20
10
0
25
35
0
5
10
15
20
15
20
25
V – Z-Voltage ( V )
Z
30
95 9601
V
– Z-Voltage ( V )
95 9607
Z
Figure 5. Diode Capacitance vs.
Z–Voltage
Figure 8. Z–Current vs. Z–Voltage
1000
100
10
100
10
1
I =1mA
Z
T =25°C
j
5mA
10mA
0.1
0.01
T =25°C
j
1
25
0
5
10
15
20
0.001
95 9606
V – Z-Voltage ( V )
Z
1.0
0
0.2
0.4
0.6
0.8
Figure 9. Differential Z–Resistance
vs. Z–Voltage
95 9605
V – Forward Voltage ( V )
F
Figure 6. Forward Current vs. Forward Voltage
100
80
P
tot
=500mW
T
amb
=25°C
60
40
20
0
20
0
4
8
12
V – Z-Voltage ( V )
Z
16
95 9604
Figure 7. Z–Current vs. Z–Voltage
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Document Number85613
Rev. 2, 01-Apr-99
TZS4678...TZS4717
Vishay Telefunken
1000
100
10
t /T=0.5
p
t /T=0.2
p
Single Pulse
R
T=T
=300K/W
–T
jmax amb
thJA
t /T=0.01
p
t /T=0.1
p
t /T=0.02
p
2
1/2
t /T=0.05
p
i
=(–V +(V +4r
T/Z
)
)/(2r )
zj
ZM
Z
Z
zj
thp
1
10
–1
0
1
2
10
10
t – Pulse Length ( ms )
10
95 9603
p
Figure 10. Thermal Response
Dimensions in mm
96 12071
Document Number 85613
Rev. 2, 01-Apr-99
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5 (6)
TZS4678...TZS4717
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
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Document Number85613
Rev. 2, 01-Apr-99
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