TZX11C [VISHAY]
Small Signal Zener Diodes; 小信号齐纳二极管
| 型号： | TZX11C |
| 厂家： | 
VISHAY |
| 描述： | Small Signal Zener Diodes |
| 文件： | 总8页 (文件大小：139K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TZX-Series
Vishay Semiconductors
Small Signal Zener Diodes
Features
• Very sharp reverse characteristic
• Low reverse current level
• Very high stability
e2
• Low noise
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
94 9367
Applications
• Voltage stabilization
Mechanical Data
Case: DO35 Glass case
Weight: approx. 125 mg
Cathode Band Color: black
Packaging codes/options:
TAP/10 k per Ammopack (52 mm tape), 30 k/box
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Parameter
Test condition
Symbol
Ptot
Value
500
Unit
mW
Power dissipation
Z-current
l = 4 mm, TL = 25 °C
IZ
Tj
Ptot/VZ
175
mA
°C
Junction temperature
Storage temperature range
Tstg
- 65 to + 175
°C
Thermal Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter
Test condition
Symbol
RthJA
Value
300
Unit
K/W
Thermal resistance junction to ambient air l = 4 mm, TL = constant
Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter
Test condition
Symbol
VF
Min
Typ.
Max
1.5
Unit
Forward voltage
IF = 200 mA
V
Document Number 85614
Rev. 2.1, 27-Mar-07
www.vishay.com
1
TZX-Series
Vishay Semiconductors
Electrical Characteristics
Partnumber Partnumber
Zener Voltage
Dynamic
Test
Reverse Leakage Current
group
Resistance
Current
1)
1)
VZ at IZ
rZ at IZ
IZ
IR
at VR
V
IR
at VR
V
V
V
max
2.5
2.6
2.7
2.8
2.9
3
Ω
mA
µA
max
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
1
1
1
1
1
1
1
1
1
µA
max
50
50
10
10
10
6
min
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3
max
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
40
TZX2V4
TZX2V7
TZX2V4A
TZX2V4B
TZX2V7A
TZX2V7B
TZX2V7C
TZX3V0A
TZX3V0B
TZX3V0C
TZX3V3A
TZX3V3B
TZX3V3C
TZX3V6A
TZX3V6B
TZX3V6C
TZX3V9A
TZX3V9B
TZX3V9C
TZX4V3A
TZX4V3B
TZX4V3C
TZX4V3D
TZX4V7A
TZX4V7B
TZX4V7C
TZX4V7D
TZX5V1A
TZX5V1B
TZX5V1C
TZX5V1D
TZX5V6A
TZX5V6B
TZX5V6C
TZX5V6D
TZX5V6E
TZX6V2A
TZX6V2B
TZX6V2C
TZX6V2D
TZX6V2E
TZX6V8A
TZX6V8B
TZX6V8C
TZX6V8D
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
2
2
2
2
2
2
2
2
2
2
2
2
2
4
4
4
4
4
4
4
4
4
TZX3V0
TZX3V3
TZX3V6
TZX3V9
TZX4V3
3.1
3.2
3.3
3.4
3.5
3.6
3.7
3.8
3.9
4
6
6
3.1
3.2
3.3
3.4
3.5
3.6
3.7
3.8
3.9
4
2
1
2
1
2
1
2
1
2
1
2
1
2
1
2
4.1
4.2
4.3
4.4
4.5
4.6
4.7
4.8
4.9
5
1
2
1.5
1.5
1.5
1.5
2
1
4.1
4.2
4.3
4.4
4.5
4.6
4.7
4.8
4.9
5
1
1
1
TZX4V7
TZX5V1
TZX5V6
6
2
5
2
4
2
3
2
2
5.1
5.2
5.3
5.5
5.6
5.7
5.8
5.9
6
2
2
2
2
5.1
5.2
5.3
5.4
5.5
5.6
5.7
5.8
6
2
2
2
1
40
2
1
40
2
1
40
2
1
40
2
1
TZX6V2
TZX6V8
15
3
3
6.1
6.3
6.4
6.6
6.7
6.9
7
15
3
3
15
3
3
6.1
6.3
6.4
6.6
6.7
6.9
15
3
3
15
3
3
15
3.5
3.5
3.5
3.5
2
15
2
15
2
7.2
15
2
www.vishay.com
2
Document Number 85614
Rev. 2.1, 27-Mar-07
TZX-Series
Vishay Semiconductors
Partnumber Partnumber
group
Zener Voltage
VZ at IZ
Dynamic
Resistance
Test
Current
Reverse Leakage Current
1)
1)
rZ at IZ
IZ
IR
at VR
V
IR
at VR
V
V
V
Ω
max
15
15
15
15
15
20
20
20
20
20
20
20
20
20
25
25
25
25
25
25
25
25
35
35
35
35
35
35
35
35
35
35
35
40
40
40
40
45
45
45
55
55
55
60
60
60
mA
µA
max
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
µA
min
7
max
7.3
max
30
TZX7V5
TZX7V5A
TZX7V5B
TZX7V5C
TZX7V5D
TZX7V5X
TZX8V2A
TZX8V2B
TZX8V2C
TZX8V2D
TZX9V1A
TZX9V1B
TZX9V1C
TZX9V1D
TZX9V1E
TZX10A
TZX10B
TZX10C
TZX10D
TZX11A
TZX11B
TZX11C
TZX11D
TZX12A
TZX12B
TZX12C
TZX12D
TZX12X
TZX13A
TZX13B
TZX13C
TZX14A
TZX14B
TZX14C
TZX15A
TZX15B
TZX15C
TZX15X
TZX16A
TZX16B
TZX16C
TZX18A
TZX18B
TZX18C
TZX20A
TZX20B
TZX20C
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2
2
2
5
5
6.65
6.84
6.94
7.13
6.72
7.32
7.5
7.2
7.6
30
7.3
7.7
5
30
7.5
7.9
5
30
7.07
7.7
7.45
8.1
5
30
TZX8V2
TZX9V1
6.2
6.2
6.2
6.2
6.8
6.8
6.8
6.8
6.8
7.5
7.5
7.5
7.5
8.2
8.2
8.2
8.2
9.5
9.5
9.5
9.5
9.5
10
0.1
7.9
8.3
0.1
8.1
8.5
0.1
7.7
8.3
8.7
0.1
7.98
8.08
8.27
8.46
8.65
8.84
9.03
9.22
9.41
9.69
9.88
10.2
10.4
10.5
10.8
11
8.5
8.9
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
8.7
9.1
8.9
9.3
9.1
9.5
9.3
9.7
TZX10
TZX11
TZX12
9.5
9.9
9.7
10.1
10.3
10.6
10.8
11.1
11.3
11.6
11.9
12.1
12.4
12.7
12.03
12.9
13.1
13.4
13.7
14
9.9
10.2
10.4
10.7
10.9
11.1
11.4
11.6
11.9
12.2
11.44
12.4
12.6
12.9
13.2
13.5
13.8
14.1
14.5
14.9
14.35
15.3
15.7
16.3
16.9
17.5
18.1
18.8
19.5
20.2
11.3
11.6
10.9
11.8
12
TZX13
TZX14
TZX15
10
10
12.3
12.5
12.8
13.1
13.4
13.8
14.2
13.6
14.5
14.9
15.5
16.1
16.6
17.2
17.9
18.5
19.2
11
11
14.3
14.7
15.1
15.5
15.09
15.9
16.5
17.1
17.7
18.3
19
11
11.5
11.5
11.5
11.5
12
TZX16
TZX18A
TZX20A
12
12
13
13
13
19.7
20.4
21.2
15
15
15
Document Number 85614
Rev. 2.1, 27-Mar-07
www.vishay.com
3
TZX-Series
Vishay Semiconductors
Partnumber Partnumber
group
Zener Voltage
Dynamic
Resistance
Test
Current
Reverse Leakage Current
1)
1)
VZ at IZ
rZ at IZ
IZ
IR
at VR
V
IR
at VR
V
V
V
Ω
max
65
mA
µA
max
1
µA
min
max
21.9
22.6
23.3
24
max
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
TZX22
TZX24
TZX22A
TZX22B
TZX22C
TZX24A
TZX24B
TZX24C
TZX24X
TZX27A
TZX27B
TZX27C
TZX27X
TZX30A
TZX30B
TZX30C
TZX30X
TZX33A
TZX33B
TZX33C
TZX36A
TZX36B
TZX36C
TZX36X
20.9
21.6
22.3
22.9
23.6
24.3
22.61
25.2
26.2
27.2
26.99
28.2
29.2
30.2
29.02
31.2
32.2
33.2
34.2
35.3
36.4
35.36
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
17
17
17
19
19
19
19
21
21
21
21
23
23
23
23
25
25
25
27
27
27
27
19.9
20.5
21.2
21.8
22.4
23.1
21.5
23.9
24.9
25.8
25.6
26.8
27.7
28.7
27.6
29.6
30.6
31.5
32.5
33.5
34.6
33.6
65
1
65
1
70
1
24.7
25.5
23.77
26.6
27.6
28.6
28.39
29.6
30.6
31.6
30.51
32.6
33.6
34.5
35.7
36.8
38
70
1
70
1
70
1
TZX27
TZX30
80
1
80
1
80
1
80
1
100
100
100
100
120
120
120
140
140
140
140
1
1
1
1
TZX33
TZX36
1
1
1
1
1
1
37.19
1
1) Additional measurement
NOTE: Additional measurement of voltage group TZM9V1 to TZX36, IR at 95 % VZmin ≤ 40 nA at Tj = 25 °C
Typical Characteristics
T
= 25 °C, unless otherwise specified
amb
500
600
500
400
300
400
300
200
l
l
200
100
0
100
0
TL = constant
20
200
0
5
10
15
0
80
120
160
40
Tamb - Ambient Temperature (°C)
95 9602
I - Lead Length (mm)
95 9611
Figure 1. Thermal Resistance vs. Lead Length
Figure 2. Total Power Dissipation vs. Ambient Temperature
www.vishay.com
4
Document Number 85614
Rev. 2.1, 27-Mar-07
TZX-Series
Vishay Semiconductors
1000
100
10
200
150
Tj = 25 °C
VR = 2 V
Tj = 25 °C
100
IZ = 5 mA
50
0
1
25
0
10
15
20
5
25
0
10
15
20
5
VZ - Z-Voltage (V)
95 9598
95 9601
VZ - Z-Voltage (V)
Figure 3. Typical Change of Working Voltage under Operating
Conditions at Tamb = 25 °C
Figure 6. Diode Capacitance vs. Z-Voltage
1.3
100
10
VZtn = VZt/VZ (25 °C)
1.2
1.1
TKVZ = 10 x 10-4/K
8 x 10-4/K
Tj = 25 °C
6 x 10-4/K
1
4 x 10-4/K
2 x 10-4/K
0
0.1
1.0
0.9
0.8
- 2 x 10-4/K
- 4 x 10-4/K
0.01
0.001
1.0
240
0
0
0.2
0.4
0.6
0.8
- 60
60
120
180
95 9599
Tj - Junction Temperature (°C)
95 9605
VF - Forward Voltage (V)
Figure 4. Typical Change of Working Voltage vs.
Junction Temperature
Figure 7. Forward Current vs. Forward Voltage
15
10
100
80
Ptot = 500 mW
Tamb = 25 °C
60
5
40
20
0
IZ = 5 mA
0
- 5
12
VZ - Z-Voltage (V)
20
50
0
4
6
8
10
20
VZ - Z-Voltage (V)
0
30
40
95 9604
95 9600
Figure 5. Temperature Coefficient of Vz vs. Z-Voltage
Figure 8. Z-Current vs. Z-Voltage
Document Number 85614
Rev. 2.1, 27-Mar-07
www.vishay.com
5
TZX-Series
Vishay Semiconductors
50
40
30
1000
100
10
Ptot = 500 mW
Tamb = 25 °C
IZ = 1 mA
5 mA
20
10
0
10 mA
Tj = 25 °C
15 20
1
25
35
0
5
10
15
20
25
30
95 9607
95 9606
VZ - Z-Voltage (V)
VZ - Z-Voltage (V)
Figure 9. Z-Current vs. Z-Voltage
Figure 10. Differential Z-Resistance vs. Z-Voltage
1000
tP/T = 0.5
100
tP/T = 0.2
Single Pulse
RthJA = 300 K/W
T = Tjmax - Tamb
10
tP/T = 0.01
tP/T = 0.1
tP/T = 0.02
tP/T = 0.05
iZM = (- VZ + (VZ2 + 4rzj x T/Zthp 1/2)/(2rzj)
)
1
10-1
100
101
102
95 9603
tP - Pulse Length (ms)
Figure 11. Thermal Response
Package Dimensions in millimeters (inches): DO35
Cathode Identification
26 min. (1.024)
3.9 max. (0.154)
26 min. (1.024)
Rev. 6 - Date: 29. January 2007
Document no.: 6.560-5004.02-4
94 9366
www.vishay.com
6
Document Number 85614
Rev. 2.1, 27-Mar-07
TZX-Series
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or
unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages,
and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated
with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 85614
Rev. 2.1, 27-Mar-07
www.vishay.com
7
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
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