U20BCT-E3/4W [VISHAY]
DIODE 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode;型号: | U20BCT-E3/4W |
厂家: | VISHAY |
描述: | DIODE 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode 局域网 功效 二极管 |
文件: | 总5页 (文件大小:150K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
U20xCT-E3, UB20xCT-E3
Vishay General Semiconductor
www.vishay.com
Dual Common Cathode Ultrafast Plastic Rectifier
FEATURES
TO-263AB
TO-220AB
• Power pack
K
• Oxide planar chip junction
• Ultrafast recovery time
• Soft recovery characteristics
2
• Low switching losses, high efficiency
1
• High forward surge capability
3
2
• Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C (for TO-263AB package)
1
UB20xCT
U20xCT
• Solder bath temperature 275 °C maximum, 10 s per
JESD 22-B106 (for TO-220AB package)
PIN 1
PIN 1
K
PIN 2
CASE
PIN 2
HEATSINK
PIN 3
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of switching
power supplies, freewheeling diodes, DC/DC converters or
polarity protection specifically for DCM application.
PRIMARY CHARACTERISTICS
IF(AV)
2 x 10 A
VRRM
IFSM
100 V to 200 V
100 A
MECHANICAL DATA
Case: TO-220AB, TO-263AB
trr
26 ns
Molding compound meets UL 94V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
VF at IF = 10 A
TJ max.
0.834 V
150 °C
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix meets JESD 201 class 1A whisker test
Package
Diode variation
TO-220AB, TO-263AB
Dual Common Cathode
Polarity: As marked
Mounting Torque: 10 in-lbs max.
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
U(B)20BCT
U(B)20CCT
U(B)20DCT
UNIT
Max. repetitive peak reverse voltage
VRRM
100
150
20
200
V
total device
per diode
Max. average forward rectified current (fig. 1)
IF(AV)
IFSM
A
A
10
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load per diode
100
Electrostatic discharge capacitor voltage,
VC
8
kV
°C
human body model: C = 150 pF, R = 1.5 k(contact mode)
Operating junction and storage temperature range
TJ, TSTG
-55 to +150
Revision: 30-Oct-13
Document Number: 89017
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
U20xCT-E3, UB20xCT-E3
Vishay General Semiconductor
www.vishay.com
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
0.854
0.931
0.760
0.834
1.2
MAX.
UNIT
IF = 5.0 A
-
1.00
-
TJ = 25 °C
IF = 10 A
IF = 5.0 A
IF = 10 A
Instantaneous forward voltage per diode (1)
VF
V
TJ = 100 °C
0.91
15
500
35
80
-
TJ = 25 °C
Reverse current per diode (2)
rated VR
IR
μA
TJ = 100 °C
120
26
Reverse recovery time per diode
Reverse recovery time per diode
Stored charge per diode
IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
trr
trr
ns
ns
nC
ns
V
73
IF = 10 A, dIdt = 20 A/μs,
R = 200 V, Irr = 0.1 IRM
V
Qrr
tfr
30
Forward recovery time per diode
Peak forward voltage per diode
160
2.6
-
IF = 10 A, dI/dt = 80 A/μs,
VF = 1.1 x VF max.
VFP
-
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Pulse test: Pulse width 40 ms
(2)
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
U20xCT
UB20xCT
UNIT
Typical thermal resistance per diode
RJC
3.0
°C/W
ORDERING INFORMATION (Example)
PACKAGE
TO-220AB
TO-263AB
TO-263AB
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
50/tube
DELIVERY MODE
Tube
U20DCT-E3/4W
1.87
1.37
1.37
4W
4W
8W
UB20DCT-E3/4W
UB20DCT-E3/8W
50/tube
Tube
800/reel
Tape and reel
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
24
20
16
12
8
12
10
8
D = 0.5
D = 0.8
D = 1.0
D = 0.3
Resistive or Inductive Load
D = 0.2
D = 0.1
UB20xCT
U20xCT
6
4
T
2
4
D = tp/T
8
tp
0
0
0
25
50
75
100
125
150
175
0
2
4
6
10
12
Case Temperature (°C)
Average Forward Current
(A)
Fig. 1 - Max. Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics Per Diode
Revision: 30-Oct-13
Document Number: 89017
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
U20xCT-E3, UB20xCT-E3
Vishay General Semiconductor
www.vishay.com
100
10
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
TJ = 125 °C
TJ = 100 °C
1
TJ = 75 °C
0.1
T
J = 50 °C
0.01
10
100
1
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
0.1
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
1000
TJ = 125 °C
100
TJ = 100 °C
TJ = 75 °C
10
TJ = 50 °C
1
0.1
10
20
30
40
50
60
70
80
90 100
10
0.001
0.01
0.1
1
100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Fig. 4 - Typical Reverse Characteristics Per Diode
Fig. 6 - Typical Junction Capacitance Per Diode
Revision: 30-Oct-13
Document Number: 89017
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
U20xCT-E3, UB20xCT-E3
Vishay General Semiconductor
www.vishay.com
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AB
0.415 (10.54) MAX.
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.370 (9.40)
0.360 (9.14)
0.154 (3.91)
0.148 (3.74)
0.113 (2.87)
0.103 (2.62)
0.145 (3.68)
0.135 (3.43)
0.603 (15.32)
0.573 (14.55)
0.635 (16.13)
0.625 (15.87)
PIN
2
0.350 (8.89)
0.330 (8.38)
1
3
0.160 (4.06)
0.140 (3.56)
1.148 (29.16)
1.118 (28.40)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.560 (14.22)
0.530 (13.46)
0.105 (2.67)
0.095 (2.41)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.104 (2.65)
0.096 (2.45)
0.022 (0.56)
0.014 (0.36)
TO-263AB
Mounting Pad Layout
0.411 (10.45)
0.380 (9.65)
0.245 (6.22)
MIN.
0.190 (4.83)
0.160 (4.06)
0.42 (10.66) MIN.
0.055 (1.40)
0.045 (1.14)
K
0.33 (8.38) MIN.
0.055 (1.40)
0.047 (1.19)
0.360 (9.14)
0.320 (8.13)
0.624 (15.85)
0.591 (15.00)
0.670 (17.02)
0.591 (15.00)
1
K
2
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.15 (3.81) MIN.
0.037 (0.940)
0.027 (0.686)
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
0.140 (3.56)
0.110 (2.79)
0.105 (2.67)
0.095 (2.41)
0.205 (5.20)
0.195 (4.95)
Revision: 30-Oct-13
Document Number: 89017
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
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Revision: 08-Feb-17
Document Number: 91000
1
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